摘要:
A phase shift mask having a plurality of mask patterns or mask data thereof is prepared, and an overlapped focus range in each of the mask patterns in a case where a result of exposure to each of the mask patterns, obtained by an exposure experiment or a lithography simulation, meets a desired dimension is obtained. A digging depth is determined at discretion based on the obtained overlapped focus range.
摘要:
A method of manufacturing semiconductor devices comprises the steps of preparing a semiconductor substrate having a surface and a natural oxide film on the surface, forming an adsorption enhancement layer on the surface of the semiconductor substrate, forming an impurity adsorption layer containing impurities on the adsorption enhancement layer, and thermally diffusing the impurities through the adsorption enhancement layer and the natural oxide film into the substrate.