公开(公告)号：US08956017B2

公开(公告)日：2015-02-17

申请号：US13405668

申请日：2012-02-27

申请人： Kumiko Ioka ,  Michinobu Inoue ,  Hideo Nishiuchi ,  Kazuki Tateyama ,  Koki Moriya

发明人： Kumiko Ioka ,  Michinobu Inoue ,  Hideo Nishiuchi ,  Kazuki Tateyama ,  Koki Moriya

IPC分类号： B60Q3/04 ,  F21V15/00 ,  B60Q1/06 ,  F21V29/00 ,  F21K99/00 ,  F21V23/02 ,  F21Y101/02

CPC分类号： F21K9/1355 ,  F21K9/23 ,  F21V23/02 ,  F21V29/75 ,  F21V29/76 ,  F21Y2115/10

摘要： A lighting apparatus includes a case, a power source unit, and a light emitting unit. The case has a side portion provided around a first axis parallel to a direction from the power source unit toward the light emitting unit. The side portion has a first portion and a second portion disposed around a central axis parallel to the first axis. The first portion has a long distance to the central axis. The second portion has a short distance to the central axis. An end portion of an inner surface of the second portion is configured to have at least one selected from a portion perpendicular to the central axis and a portion has a recessed configuration with respect to the central axis when the inner surface is cut by a cross-section perpendicular to the central axis.

摘要翻译： 照明装置包括壳体，电源单元和发光单元。 壳体具有围绕平行于从电源单元朝向发光单元的方向的第一轴线设置的侧部。 侧部具有围绕平行于第一轴线的中心轴线设置的第一部分和第二部分。 第一部分与中心轴的距离很长。 第二部分与中心轴的距离很短。 第二部分的内表面的端部构造成具有从垂直于中心轴线的部分中选择的至少一个部分，并且当内表面被切断时，部分具有相对于中心轴线的凹陷构造， 垂直于中心轴的截面。

公开(公告)号：US08569787B2

公开(公告)日：2013-10-29

申请号：US13154916

申请日：2011-06-07

申请人： Hideo Nishiuchi ,  Kazuhito Higuchi ,  Susumu Obata ,  Toshiya Nakayama

发明人： Hideo Nishiuchi ,  Kazuhito Higuchi ,  Susumu Obata ,  Toshiya Nakayama

IPC分类号： H01L33/00

CPC分类号： H01L33/0079 ,  H01L24/06 ,  H01L33/0095 ,  H01L33/507 ,  H01L33/508 ,  H01L33/647 ,  H01L2224/06051 ,  H01L2924/12041 ,  H01L2933/0066 ,  H01L2924/00

摘要： According to one embodiment, a light source apparatus includes a semiconductor light emitting device, a mounting substrate, first and second connection members. The semiconductor light emitting device includes a light emitting unit, first and second conductive members, a sealing member, and an optical layer. The mounting substrate includes a base body, first and second substrate electrodes. The connection member electrically connects the conductive member to the substrate electrode. The conductive member is electrically connected to the light emitting unit electrode and includes first and second columnar portions provided on the second major surface. The sealing member covers side surfaces of the first and the second conductive members. The optical layer is provided on the first major surface of the semiconductor stacked body and includes a wavelength conversion unit. A surface area of the second substrate electrode is not less than 100 times a cross-sectional area of the second columnar portion.

摘要翻译： 根据一个实施例，光源装置包括半导体发光器件，安装衬底，第一和第二连接构件。 半导体发光器件包括发光单元，第一和第二导电构件，密封构件和光学层。 安装基板包括基体，第一和第二基板电极。 连接构件将导电构件电连接到基板电极。 导电构件电连接到发光单元电极，并且包括设置在第二主表面上的第一和第二柱状部分。 密封构件覆盖第一导电构件和第二导电构件的侧表面。 光学层设置在半导体层叠体的第一主表面上并且包括波长转换单元。 第二基板电极的表面积不小于第二柱状部分的横截面面积的100倍。

公开(公告)号：US20130082294A1

公开(公告)日：2013-04-04

申请号：US13607480

申请日：2012-09-07

申请人： Toshiya NAKAYAMA ,  Kazuhito HIGUCHI ,  Hiroshi KOIZUMI ,  Hideo NISHIUCHI ,  Susumu OBATA ,  Akiya KIMURA ,  Yoshiaki SUGIZAKI ,  Akihiro KOJIMA ,  Yosuke AKIMOTO

发明人： Toshiya NAKAYAMA ,  Kazuhito HIGUCHI ,  Hiroshi KOIZUMI ,  Hideo NISHIUCHI ,  Susumu OBATA ,  Akiya KIMURA ,  Yoshiaki SUGIZAKI ,  Akihiro KOJIMA ,  Yosuke AKIMOTO

IPC分类号： H01L33/50

CPC分类号： H01L33/56 ,  H01L27/15 ,  H01L33/502 ,  H01L33/505 ,  H01L33/508 ,  H01L33/54 ,  H01L2933/0041

摘要： According to one embodiment, a light-emitting unit which emits light, a wavelength conversion unit which includes a phosphor and which is provided on a main surface of the light-emitting unit, and a transparent resin which is provided on top of the wavelength conversion unit, are prepared. The transparent resin has a greater modulus of elasticity and/or a higher Shore hardness than the wavelength conversion unit.

摘要翻译： 根据一个实施例，发射光的发光单元，包括荧光体并设置在发光单元的主表面上的波长转换单元和设置在波长转换器顶部的透明树脂 单位，准备。 透明树脂具有比波长转换单元更大的弹性模量和/或更高的肖氏硬度。

公开(公告)号：US08350283B2

公开(公告)日：2013-01-08

申请号：US13152654

申请日：2011-06-03

申请人： Hideo Nishiuchi ,  Kazuhito Higuchi ,  Susumu Obata ,  Toshiya Nakayama

发明人： Hideo Nishiuchi ,  Kazuhito Higuchi ,  Susumu Obata ,  Toshiya Nakayama

IPC分类号： H01L33/50

CPC分类号： H01L33/647 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/505 ,  H01L33/58 ,  H01L33/62 ,  H01L33/642 ,  H01L2924/0002 ,  H01L2933/0041 ,  H01L2924/00

摘要： According to one embodiment, a semiconductor light emitting device includes a light emitting unit, first and second conductive members, an insulating layer, a sealing member, and an optical layer. The light emitting unit includes a semiconductor stacked body and first and second electrodes. The semiconductor stacked body includes first and second semiconductor layers and a light emitting layer, and has a major surface on a second semiconductor layer side. The first and second electrodes are connected to the first and second semiconductor layers on the major surface side, respectively. The first conductive member is connected to the first electrode and includes a first columnar portion covering a portion of the second semiconductor. The insulating layer is provided between the first columnar portion and the portion of the second semiconductor. The sealing member covers side surfaces of the conductive members. The optical layer is provided on the other major surface.

摘要翻译： 根据一个实施例，半导体发光器件包括发光单元，第一和第二导电构件，绝缘层，密封构件和光学层。 发光单元包括半导体层叠体和第一和第二电极。 半导体层叠体包括第一和第二半导体层和发光层，并且在第二半导体层侧具有主表面。 第一和第二电极分别连接到主表面侧的第一和第二半导体层。 第一导电构件连接到第一电极并且包括覆盖第二半导体的一部分的第一柱状部分。 绝缘层设置在第一柱状部分和第二半导体的部分之间。 密封构件覆盖导电构件的侧表面。 光学层设置在另一个主表面上。

公开(公告)号：US20110300651A1

公开(公告)日：2011-12-08

申请号：US12888558

申请日：2010-09-23

申请人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Susumu Obata ,  Hideo Nishiuchi

发明人： Akihiro Kojima ,  Yoshiaki Sugizaki ,  Susumu Obata ,  Hideo Nishiuchi

IPC分类号： H01L33/44

CPC分类号： H01L33/0079 ,  H01L33/0075 ,  H01L33/486 ,  H01L2224/16 ,  H01L2933/0066

摘要： According to one embodiment, a method for manufacturing a light-emitting device is disclosed. The method can include forming a first electrode and a second electrode on a semiconductor layer which is included in a first structure body, the semiconductor layer including a light-emitting layer on a substrate. The method can include forming a first metal pillar in conduction with the first electrode, and a second metal pillar in conduction with the second electrode. The method can include filling a region between the first metal pillar and the second metal pillar with an insulating layer. In addition, the method can include separating the substrate from the semiconductor layer, and forming a second structure body in which the semiconductor layer is supported by the insulating layer and which is convex toward an opposite side of the insulating layer to the semiconductor layer.

摘要翻译： 根据一个实施例，公开了一种用于制造发光器件的方法。 该方法可以包括在包括在第一结构体中的半导体层上形成第一电极和第二电极，该半导体层包括在基板上的发光层。 该方法可以包括形成与第一电极导通的第一金属柱和与第二电极导通的第二金属柱。 该方法可以包括用绝缘层填充第一金属柱和第二金属柱之间的区域。 此外，该方法可以包括从半导体层分离衬底，以及形成第二结构体，其中半导体层被绝缘层支撑并且朝向绝缘层的与半导体层相反的一侧凸出。

公开(公告)号：US07656034B2

公开(公告)日：2010-02-02

申请号：US12208718

申请日：2008-09-11

申请人： Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kazuhito Higuchi ,  Tomoyuki Kitani

发明人： Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kazuhito Higuchi ,  Tomoyuki Kitani

IPC分类号： H01L21/60

CPC分类号： H01L24/85 ,  H01L23/4952 ,  H01L23/49582 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/81 ,  H01L2224/0401 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/13099 ,  H01L2224/16 ,  H01L2224/16225 ,  H01L2224/291 ,  H01L2224/29339 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4554 ,  H01L2224/456 ,  H01L2224/45647 ,  H01L2224/48091 ,  H01L2224/48225 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48647 ,  H01L2224/48724 ,  H01L2224/48744 ,  H01L2224/48747 ,  H01L2224/73265 ,  H01L2224/81192 ,  H01L2224/81801 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85909 ,  H01L2224/8592 ,  H01L2224/92 ,  H01L2224/92247 ,  H01L2924/00014 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2224/85 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A semiconductor device includes a semiconductor element, a lead, and a gold wire electrically connecting an electrode of the semiconductor element and the lead. In the semiconductor device, the gold wire is covered with a metal and is a continuous film formed by plating.

摘要翻译： 半导体器件包括半导体元件，引线和电连接半导体元件的电极和引线的金线。 在半导体器件中，金线被金属覆盖，并且是通过电镀形成的连续膜。

公开(公告)号：US08378479B2

公开(公告)日：2013-02-19

申请号：US13188124

申请日：2011-07-21

申请人： Akira Tojo ,  Tomoyuki Kitani ,  Kazuhito Higuchi ,  Masako Fukumitsu ,  Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kyoto Kato

发明人： Akira Tojo ,  Tomoyuki Kitani ,  Kazuhito Higuchi ,  Masako Fukumitsu ,  Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kyoto Kato

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/03 ,  H01L24/48 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/274 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating materials, each of the outer plating materials covering five surfaces of the outer electrode other than one surface of the outer electrode being connected with the inner electrode.

摘要翻译： 根据本发明的一个方面，提供一种半导体器件，包括半导体芯片，该半导体芯片包括第一电极和半导体元件的第二电极，第一电极和第二电极被配置在第一表面和第二表面上 半导体芯片的封装材料，封装半导体芯片的封装材料，表面部分不同于区域，每个区域与第一第二电极连接，每个内部电极与第一或第二电极连接，厚度为 来自第一表面或第二表面的内部电极分别与来自第一表面或第二表面的密封材料的厚度相同，外部电极，每个外部电极形成在封装材料上并与内部电极连接， 外部电极的宽度至少比半导体ch的宽度宽 ip和外部电镀材料，覆盖外部电极的除了外部电极的一个表面以外的五个表面的每个外部电镀材料与内部电极连接。

公开(公告)号：US20100052142A1

公开(公告)日：2010-03-04

申请号：US12553452

申请日：2009-09-03

申请人： Akira Tojo ,  Tomoyuki Kitani ,  Kazuhito Higuchi ,  Masako Fukumitsu ,  Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kyoko Kato

发明人： Akira Tojo ,  Tomoyuki Kitani ,  Kazuhito Higuchi ,  Masako Fukumitsu ,  Tomohiro Iguchi ,  Hideo Nishiuchi ,  Kyoko Kato

IPC分类号： H01L23/28 ,  H01L21/56

CPC分类号： H01L24/97 ,  H01L21/561 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/544 ,  H01L24/03 ,  H01L24/48 ,  H01L2223/54433 ,  H01L2223/54486 ,  H01L2224/04042 ,  H01L2224/274 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/01004 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01022 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/014 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/45015 ,  H01L2924/207

摘要： According to an aspect of the present invention, there is provided a semiconductor device, including a semiconductor chip including a first electrode and a second electrode of a semiconductor element, the first electrode and the second electrode being configured on a first surface and a second surface of the semiconductor chip, an encapsulating material encapsulating the semiconductor chip, the surface portion being other than regions, each of the regions connecting with the first second electrodes, each of inner electrodes being connected with the first or the second electrodes, a thickness of the inner electrode from the first surface or the second surface being the same thickness as the encapsulating material from the first surface or the second surface, respectively, outer electrodes, each of the outer electrodes being formed on the encapsulating material and connected with the inner electrode, a width of the outer electrode being at least wider than a width of the semiconductor chip, and outer plating materials, each of the outer plating materials covering five surfaces of the outer electrode other than one surface of the outer electrode being connected with the inner electrode.

摘要翻译： 根据本发明的一个方面，提供一种半导体器件，包括半导体芯片，该半导体芯片包括第一电极和半导体元件的第二电极，第一电极和第二电极被配置在第一表面和第二表面上 半导体芯片的封装材料，封装半导体芯片的封装材料，表面部分不同于区域，每个区域与第一第二电极连接，每个内部电极与第一或第二电极连接，厚度为 来自第一表面或第二表面的内部电极分别与来自第一表面或第二表面的密封材料的厚度相同，外部电极，每个外部电极形成在封装材料上并与内部电极连接， 外部电极的宽度至少比半导体ch的宽度宽 ip和外部电镀材料，覆盖外部电极的除了外部电极的一个表面以外的五个表面的每个外部电镀材料与内部电极连接。

公开(公告)号：US20090072390A1

公开(公告)日：2009-03-19

申请号：US12207726

申请日：2008-09-10

申请人： Hideo NISHIUCHI ,  Tomohiro IGUCHI

发明人： Hideo NISHIUCHI ,  Tomohiro IGUCHI

IPC分类号： H01L23/495 ,  H01L21/60

CPC分类号： H01L23/49562 ,  H01L23/49524 ,  H01L24/29 ,  H01L24/32 ,  H01L24/37 ,  H01L24/40 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/83 ,  H01L24/84 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29111 ,  H01L2224/29144 ,  H01L2224/32245 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2224/73219 ,  H01L2224/73221 ,  H01L2224/73265 ,  H01L2224/83192 ,  H01L2224/838 ,  H01L2224/83805 ,  H01L2224/84801 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1306 ,  H01L2924/181 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/00 ,  H01L2924/00014 ,  H01L2924/00015 ,  H01L2924/00012

摘要： A semiconductor apparatus (1) includes a semiconductor device (2), a first lead (3) having an electrode for connection with a source electrode (S) of the semiconductor device (2), a second lead (4) having an electrode for connection with a gate electrode (G) of the semiconductor device (2), a third lead (5) having an electrode for connection with a drain electrode (D) of the semiconductor device (2), and a strap member (6) covered with a metallic film for electrical interconnection between the drain electrode (D) of the semiconductor device (2) and the electrode of the third lead (5).

摘要翻译： 半导体装置（1）包括半导体装置（2），具有用于与半导体装置（2）的源电极（S）连接的电极的第一引线（3），具有用于 与半导体器件（2）的栅电极（G）的连接，具有用于与半导体器件（2）的漏电极（D）连接的电极的第三引线（5）和覆盖的带状部件 与用于半导体器件（2）的漏电极（D）和第三引线（5）的电极之间的电互连的金属膜。

公开(公告)号：US20080211076A1

公开(公告)日：2008-09-04

申请号：US12040209

申请日：2008-02-29

申请人： Hideo Nishiuchi ,  Takeshi Miyagi ,  Kazuki Tateyama ,  Susumu Obata ,  Kazuhito Higuchi

发明人： Hideo Nishiuchi ,  Takeshi Miyagi ,  Kazuki Tateyama ,  Susumu Obata ,  Kazuhito Higuchi

IPC分类号： H01L23/04 ,  H01L21/00

CPC分类号： B81B7/0077 ,  B81C2203/0136 ,  B81C2203/0145

摘要： A semiconductor device capable of elevating a yield rate of products to improve the productivity and also ensuring high reliability in production and a manufacturing method of the semiconductor device are provided. The semiconductor device includes a semiconductor substrate 2, a MEMS part 3 formed on a surface of the semiconductor substrate 2 and a cap part arranged at a distance from the MEMS part 3 and also arranged on the surface of the semiconductor substrate 2 so as to cover the MEMS part 3. In the semiconductor device, the cap part is formed by a sidewall area E surrounding the MEMS part 3 and a top board area F having a hollow layer and also forming a closed space together with the semiconductor substrate 2 and the sidewall area E.

摘要翻译： 提供能够提高产品的成品率以提高生产率并且还确保高生产可靠性的半导体器件和半导体器件的制造方法。 半导体器件包括半导体衬底2，形成在半导体衬底2的表面上的MEMS部分3和与MEMS部分3相距一定距离地布置并且还被布置在半导体衬底2的表面上以覆盖 MEMS部件3.在半导体器件中，盖部分由围绕MEMS部件3的侧壁区域E和具有中空层的顶板区域F形成，并且还与半导体衬底2和侧壁一起形成封闭空间 区域E.