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    METHOD OF MANUFACTURING A PERPENDICULAR MAGNETIC WRITE HEAD WITH STEPPED TRAILING MAGNETIC SHIELD WITH ELECTRICAL LAPPING GUIDE CONTROL
    1.
    发明申请
    METHOD OF MANUFACTURING A PERPENDICULAR MAGNETIC WRITE HEAD WITH STEPPED TRAILING MAGNETIC SHIELD WITH ELECTRICAL LAPPING GUIDE CONTROL 有权
    使用带电导线控制的步进式磁屏蔽制造全磁性写磁头的方法

    公开(公告)号：US20090152235A1

    公开(公告)日：2009-06-18

    申请号：US11956292

    申请日：2007-12-13

    申请人： Wen-Chien David Hsiao ,  Hieu Lam ,  Vladimir Nikitin ,  Sue Siyang Zhang ,  Yi Zheng

    发明人： Wen-Chien David Hsiao ,  Hieu Lam ,  Vladimir Nikitin ,  Sue Siyang Zhang ,  Yi Zheng

    IPC分类号： B44C1/22

    CPC分类号： G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  G11B5/3166 ,  G11B5/3169

    摘要： A method for manufacturing a magnetic write head having a stepped trailing shield. The stepped trailing shield is formed by forming a non-magnetic bump over a write pole prior to electroplating a wrap-around magnetic shield. The method allows the location of the front edge of the bump relative to the back edge of the wrap-around shield to be monitored by measuring the electrical resistance of an electrical lapping guide formed concurrently with these features. This concurrent formation of a lapping guide can be used to define the relative location of other features as well, such as the location of a back edge of a wrap-around shield relative to a flare point of a write pole.

    摘要翻译： 一种用于制造具有阶梯式后挡板的磁写头的方法。 在电镀环绕磁屏蔽之前，通过在写入极上形成非磁性凸块来形成阶梯式后屏蔽。 该方法允许通过测量与这些特征同时形成的电研磨引导件的电阻来监测凸块的前边缘相对于环绕护罩的后边缘的位置。 研磨引导件的这种同时形成也可以用于限定其它特征的相对位置，例如环绕屏蔽件的后边缘相对于写入极点的扩张点的位置。

    Controlling the thickness of wafers during the electroplating process
    3.
    发明申请
    Controlling the thickness of wafers during the electroplating process 有权
    控制电镀过程中晶圆的厚度

    公开(公告)号：US20070125656A1

    公开(公告)日：2007-06-07

    申请号：US11292606

    申请日：2005-12-01

    申请人： Wai Fu ,  Hieu Lam ,  Shahram Mehdizadeh ,  Yeak-Chong Wong

    发明人： Wai Fu ,  Hieu Lam ,  Shahram Mehdizadeh ,  Yeak-Chong Wong

    IPC分类号： C25D21/12

    CPC分类号： C25D21/12 ,  C25D17/001

    摘要： Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.

    摘要翻译： 本发明的实施例涉及在电镀过程中控制晶片的厚度。 接收关于在前一晶片的电镀过程期间使用的旧电流的信息。 接收与前一晶片的厚度有关的信息。 自动确定新的电流。 在新的晶片的电镀过程中使用新的电流。 基于与旧电流有关的信息和与先前晶片的厚度相关的信息来确定新电流。

    Magnetic write head having a self aligned, steep shoulder pole structure and method of manufacture thereof
    4.
    发明申请
    Magnetic write head having a self aligned, steep shoulder pole structure and method of manufacture thereof 失效
    具有自对准陡肩极结构的磁写头及其制造方法

    公开(公告)号：US20070058293A1

    公开(公告)日：2007-03-15

    申请号：US11228783

    申请日：2005-09-15

    申请人： Daniel Bedell ,  Hieu Lam ,  Kim Lee ,  Jyh-Shuey Lo

    发明人： Daniel Bedell ,  Hieu Lam ,  Kim Lee ,  Jyh-Shuey Lo

    IPC分类号： G11B5/147

    CPC分类号： G11B5/3116 ,  G11B5/3163

    摘要： A magnetic write head and method of manufacture thereof that has a first pole structure having a notched structure configured with a steep shoulder portion and a narrow vertical notch portion extending from the top of the steep shoulder portion. The write head also includes a second pole structure (P2) that has a very narrow width (track width) and that is self aligned with the narrow vertical notch structure of the first pole structure. The write head provides excellent magnetic properties including a very narrow track width and minimal side writing, while avoiding magnetic saturation of the poles.

    摘要翻译： 一种磁写头及其制造方法，其具有第一极结构，其具有构造为具有陡峭肩部的切口结构和从陡峭肩部的顶部延伸的窄垂直切口部。 写头还包括具有非常窄的宽度（轨道宽度）并且与第一极结构的窄垂直切口结构自对准的第二极结构（P 2）。 写头提供优异的磁性，包括非常窄的轨道宽度和最小的侧面写入，同时避免极点的磁饱和。

    Method and apparatus for determining an etch property using an endpoint signal
    5.
    发明申请
    Method and apparatus for determining an etch property using an endpoint signal 有权
    使用端点信号确定蚀刻性质的方法和装置

    公开(公告)号：US20060048891A1

    公开(公告)日：2006-03-09

    申请号：US10531469

    申请日：2003-10-31

    申请人： Hongyu Yue ,  Hieu Lam

    发明人： Hongyu Yue ,  Hieu Lam

    IPC分类号： C23F1/00 ,  G01L21/30

    CPC分类号： H01J37/32935 ,  H01J37/32963

    摘要： The present invention presents a plasma processing system for etching a layer on a substrate comprising a process chamber, a diagnostic system coupled to the process chamber and configured to measure at least one endpoint signal, and a controller coupled to the diagnostic system and configured to determine in-situ at least one of an etch rate and an etch rate uniformity of the etching from the endpoint signal. Furthermore, an in-situ method of determining an etch property for etching a layer on a substrate in a plasma processing system is presented comprising the steps: providing a thickness of the layer; etching the layer on the substrate; measuring at least one endpoint signal using a diagnostic system coupled to the plasma processing system, wherein the endpoint signal comprises an endpoint transition; and determining the etch rate from a ratio of the thickness to a difference between a time during the endpoint transition and a starting time of the etching.

    摘要翻译： 本发明提出了一种用于蚀刻衬底上的层的等离子体处理系统，包括处理室，耦合到处理室并被配置为测量至少一个端点信号的诊断系统，以及耦合到诊断系统的控制器，并且被配置为确定 从端点信号原位蚀刻速率和蚀刻速度均匀性中的至少一个。 此外，提出了确定用于蚀刻等离子体处理系统中的衬底上的层的蚀刻性质的原位方法，包括以下步骤：提供该层的厚度; 蚀刻衬底上的层; 使用耦合到所述等离子体处理系统的诊断系统来测量至少一个端点信号，其中所述端点信号包括端点转换; 以及从所述厚度与所述端点转变期间的时间与所述蚀刻的开始时间之间的差的比率确定所述蚀刻速率。

    Controlling the thickness of wafers during the electroplating process
    7.
    发明授权
    Controlling the thickness of wafers during the electroplating process 有权
    控制电镀过程中晶圆的厚度

    公开(公告)号：US07914657B2

    公开(公告)日：2011-03-29

    申请号：US11292606

    申请日：2005-12-01

    申请人： Wai B. Fu ,  Hieu Lam ,  Shahram Y. Mehdizadeh ,  Yeak-Chong Wong

    发明人： Wai B. Fu ,  Hieu Lam ,  Shahram Y. Mehdizadeh ,  Yeak-Chong Wong

    IPC分类号： C25D21/12

    CPC分类号： C25D21/12 ,  C25D17/001

    摘要： Embodiments of the present invention pertain to controlling thickness of wafers during electroplating process. Information pertaining to an old current used during an electroplating process of a previous wafer is received. Information pertaining to the thickness of the previous wafer is received. A new current is automatically determined. The new current is to be used during an electroplating process for a new wafer. The new current is determined based on the information pertaining to the old current and the information pertaining to the thickness of the previous wafer.

    摘要翻译： 本发明的实施例涉及在电镀过程中控制晶片的厚度。 接收关于在前一晶片的电镀过程期间使用的旧电流的信息。 接收与前一晶片的厚度有关的信息。 自动确定新的电流。 在新的晶片的电镀过程中使用新的电流。 基于与旧电流有关的信息和与先前晶片的厚度相关的信息来确定新电流。

    Magnetic write head having a self aligned, steep shoulder pole structure and method of manufacture thereof
    8.
    发明授权
    Magnetic write head having a self aligned, steep shoulder pole structure and method of manufacture thereof 失效
    具有自对准陡肩极结构的磁写头及其制造方法

    公开(公告)号：US07612964B2

    公开(公告)日：2009-11-03

    申请号：US11228783

    申请日：2005-09-15

    申请人： Daniel Wayne Bedell ,  Hieu Lam ,  Kim Y. Lee ,  Jyh-Shuey Lo

    发明人： Daniel Wayne Bedell ,  Hieu Lam ,  Kim Y. Lee ,  Jyh-Shuey Lo

    IPC分类号： G11B5/187

    CPC分类号： G11B5/3116 ,  G11B5/3163

    摘要： A magnetic write head and method of manufacture thereof that has a first pole structure having a notched structure configured with a steep shoulder portion and a narrow vertical notch portion extending from the top of the steep shoulder portion. The write head also includes a second pole structure (P2) that has a very narrow width (track width) and that is self aligned with the narrow vertical notch structure of the first pole structure. The write head provides excellent magnetic properties including a very narrow track width and minimal side writing, while avoiding magnetic saturation of the poles.

    摘要翻译： 一种磁写头及其制造方法，其具有第一极结构，其具有构造为具有陡峭肩部的切口结构和从陡峭肩部的顶部延伸的窄垂直切口部。 写头还包括具有非常窄的宽度（轨道宽度）并且与第一极结构的窄垂直切口结构自对准的第二极结构（P2）。 写头提供优异的磁性，包括非常窄的轨道宽度和最小的侧面写入，同时避免极点的磁饱和。

    Layered return poles for magnetic write heads
    10.
    发明申请
    Layered return poles for magnetic write heads 有权
    磁性写头的分层返回极

    公开(公告)号：US20090168260A1

    公开(公告)日：2009-07-02

    申请号：US12005558

    申请日：2007-12-26

    申请人： Donald G. Allen ,  Hieu Lam ,  Terence Tin-Lok Lam ,  Steve C. Puga

    发明人： Donald G. Allen ,  Hieu Lam ,  Terence Tin-Lok Lam ,  Steve C. Puga

    IPC分类号： G11B5/33

    CPC分类号： G11B5/3153 ,  G11B5/1278

    摘要： Methods and structures for the fabrication of both thin film longitudinal and perpendicular write heads are disclosed. A unique feature of these write heads is the inclusion of layered return poles, which comprise alternating layers of 22/78 and 80/20 NiFe alloys. The alternating layers also vary in thickness, the 22/78 NiFe layers having a nominal thickness of 1500 angstroms and the 80/20 NiFe layers having a nominal thickness of about 75 angstroms. Head efficiency and signal to noise ratios are significantly improved in heads having layered return pole construction.

    摘要翻译： 公开了用于制造薄膜纵向和垂直写入头的方法和结构。 这些写头的一个独特之处在于包含层叠的返回极，其包括22/78和80/20 NiFe合金的交替层。 交替层的厚度也变化，22/78 NiFe层的标称厚度为1500埃，而80/20 NiFe层的标称厚度为约75埃。 在具有分层回极结构的头部中，头部效率和信噪比显着提高。