公开(公告)号：US08207066B2

公开(公告)日：2012-06-26

申请号：US12512094

申请日：2009-07-30

申请人： Yoshiharu Inoue ,  Hiroaki Ishimura ,  Hitoshi Kobayashi ,  Masunori Ishihara ,  Toru Ito ,  Toshiaki Nishida

发明人： Yoshiharu Inoue ,  Hiroaki Ishimura ,  Hitoshi Kobayashi ,  Masunori Ishihara ,  Toru Ito ,  Toshiaki Nishida

IPC分类号： H01L21/00 ,  H01L21/302 ,  H01L21/461

CPC分类号： H01L21/3065

摘要： The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.

摘要翻译： 本发明提供了一种干蚀刻方法，其能够在没有受到微载荷效应的限制的情况下获得具有小侧蚀刻的良好轮廓。 使用等离子体蚀刻具有隔离部分和致密部分的图案的样品的干蚀刻方法包括使用包含CF基气体和氮气的蚀刻气体的第一蚀刻步骤，其中蚀刻速率 图案的致密部分的厚度大于掩模图案的隔离部分的蚀刻速率，以及第二蚀刻步骤，其中图案的隔离部分的蚀刻速率大于图案的密集部分的蚀刻速率 模式。

公开(公告)号：US20100255612A1

公开(公告)日：2010-10-07

申请号：US12512094

申请日：2009-07-30

申请人： Yoshiharu INOUE ,  Hiroaki ISHIMURA ,  Hitoshi KOBAYASHI ,  Masunori ISHIHARA ,  Toru ITO ,  Toshiaki NISHIDA

发明人： Yoshiharu INOUE ,  Hiroaki ISHIMURA ,  Hitoshi KOBAYASHI ,  Masunori ISHIHARA ,  Toru ITO ,  Toshiaki NISHIDA

IPC分类号： H01L21/66 ,  H01L21/3065

CPC分类号： H01L21/3065

摘要： The invention provides a dry etching method capable of obtaining a good profile with little side etch without receiving the restriction of a micro loading effect. A dry etching method for etching a sample having formed on the surface thereof a pattern with an isolated portion and a dense portion using plasma comprises a first etching step using an etching gas containing a CF-based gas and a nitrogen gas in which an etching rate of a dense portion of the pattern is greater than the etching rate of the isolated portion of the mask pattern, and a second etching step in which the etching rate of the isolated portion of the pattern is greater than the etching rate of the dense portion of the pattern.

摘要翻译： 本发明提供了一种干蚀刻方法，其能够在没有受到微载荷效应的限制的情况下获得具有小侧蚀刻的良好轮廓。 使用等离子体蚀刻具有隔离部分和致密部分的图案的样品的干蚀刻方法包括使用包含CF基气体和氮气的蚀刻气体的第一蚀刻步骤，其中蚀刻速率 图案的致密部分的厚度大于掩模图案的隔离部分的蚀刻速率，以及第二蚀刻步骤，其中图案的隔离部分的蚀刻速率大于图案的密集部分的蚀刻速率 模式。

公开(公告)号：US20120125890A1

公开(公告)日：2012-05-24

申请号：US13011070

申请日：2011-01-21

申请人： Takeshi OHMORI ,  Yasuhiro NISHIMORI ,  Hiroaki ISHIMURA ,  Hitoshi KOBAYASHI ,  Masamichi SAKAGUCHI

发明人： Takeshi OHMORI ,  Yasuhiro NISHIMORI ,  Hiroaki ISHIMURA ,  Hitoshi KOBAYASHI ,  Masamichi SAKAGUCHI

IPC分类号： C23F1/00 ,  B08B5/00

CPC分类号： H01J37/32816 ,  B08B7/0035 ,  H01J37/32834

摘要： In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.

摘要翻译： 在本发明中，提供了一种等离子体处理方法，其减少或消除由处理室的内壁和处理室内的部件的氧化钇的表面上的质量变化层引起的污染物质的排放。 等离子体处理方法包括在处理室内设置样品并蚀刻样品的蚀刻步骤，通过使用等离子体去除沉积产物的沉积产物去除步骤，沉积产物通过 蚀刻步骤，使用含有氟或氯的气体产生等离子体，以及在沉积物除去步骤之后将稀释气体等离子体暴露于处理室内部的步骤。

公开(公告)号：US07098138B2

公开(公告)日：2006-08-29

申请号：US10404647

申请日：2003-04-02

申请人： Takao Arase ,  Motohiko Yoshigai ,  Go Saito ,  Masamichi Sakaguchi ,  Hiroaki Ishimura ,  Takahiro Shimomura

发明人： Takao Arase ,  Motohiko Yoshigai ,  Go Saito ,  Masamichi Sakaguchi ,  Hiroaki Ishimura ,  Takahiro Shimomura

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01J37/32082 ,  H01J37/32477 ,  H01J37/32697 ,  H01J2237/022 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/67069 ,  H01L29/6656

摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

公开(公告)号：US20060171093A1

公开(公告)日：2006-08-03

申请号：US11069551

申请日：2005-03-02

申请人： Hiroaki Ishimura ,  Ken Yoshioka ,  Takahiro Abe ,  Go Saito ,  Motohiko Yoshigai

发明人： Hiroaki Ishimura ,  Ken Yoshioka ,  Takahiro Abe ,  Go Saito ,  Motohiko Yoshigai

IPC分类号： H01H1/00

CPC分类号： H01J37/32706 ,  H01J37/321 ,  H01L21/6833

摘要： In a plasma processing apparatus using electrostatic chuck, increase of plasma potential is prevented and abnormal discharge is avoided. The plasma processing apparatus comprises an RF source for generating plasma in a vacuum container, another RF source for applying an RF bias power to a sample, a sample stage having an electrostatic chuck electrode, a DC power supply for applying an electrostatic chuck voltage to the electrode, and a controller for shifting the electrostatic chuck voltage to negative by a potential difference of quarter to half of peak-to-peak voltage of the RF bias power for suppressing increase of plasma potential.

摘要翻译： 在使用静电卡盘的等离子体处理装置中，防止等离子体电位的增加，避免异常放电。 等离子体处理装置包括用于在真空容器中产生等离子体的RF源，用于向样品施加RF偏置功率的另一RF源，具有静电卡盘电极的样品台，用于向静电卡盘电压施加静电卡盘电压的DC电源 电极，以及控制器，用于将静电卡盘电压转换为负值，以抑制RF偏置功率的峰 - 峰电压的四分之一到一半的电位差，以抑制等离子体电位的增加。

公开(公告)号：US20060048892A1

公开(公告)日：2006-03-09

申请号：US11253698

申请日：2005-10-20

申请人： Takao Arase ,  Motohiko Yoshigai ,  Go Saito ,  Masamichi Sakaguchi ,  Hiroaki Ishimura ,  Takahiro Shimomura

发明人： Takao Arase ,  Motohiko Yoshigai ,  Go Saito ,  Masamichi Sakaguchi ,  Hiroaki Ishimura ,  Takahiro Shimomura

IPC分类号： C23F1/00

CPC分类号： H01J37/32082 ,  H01J37/32477 ,  H01J37/32697 ,  H01J2237/022 ,  H01J2237/3341 ,  H01L21/31116 ,  H01L21/67069 ,  H01L29/6656

摘要： A plasma processing method is provided of processing a sample having a silicon nitride layer with high accuracy of size in anisotropy and excellent selectivity to a silicon oxide layer as underlayer. A mixed atmosphere of chlorine gas containing no fluorine with aluminum is converted into plasma in a plasma etching processing chamber and the sample having the silicon nitride layer is etched by using the plasma.

公开(公告)号：US06709984B2

公开(公告)日：2004-03-23

申请号：US10216720

申请日：2002-08-13

申请人： Go Saito ,  Hiroaki Ishimura ,  Yutaka Kudoh ,  Masamichi Sakaguchi ,  Kazuo Takata

发明人： Go Saito ,  Hiroaki Ishimura ,  Yutaka Kudoh ,  Masamichi Sakaguchi ,  Kazuo Takata

IPC分类号： H01L21311

CPC分类号： H01L21/3086 ,  H01L21/3065 ,  H01L21/3081 ,  H01L21/3085 ,  H01L21/76232

摘要： A method for manufacturing a semiconductor device comprises etching a semiconductor substrate having an insulation film as mask using a mixed gas composed of HBr and CHF3, thereby having a reaction product composed of the semiconductor substrate and reaction gas to be adhered gradually on the side walls of the mask, and as a result creating a trench having a sufficient roundness formed to the upper end portion thereof.

公开(公告)号：US09018075B2

公开(公告)日：2015-04-28

申请号：US13404162

申请日：2012-02-24

申请人： Toru Ito ,  Hiroaki Ishimura ,  Akito Kouchi ,  Hayato Watanabe

发明人： Toru Ito ,  Hiroaki Ishimura ,  Akito Kouchi ,  Hayato Watanabe

IPC分类号： H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/3065 ,  H01L21/30655

摘要： The present invention provides a plasma processing method in which sideetching and microloading can be suppressed in a plasma processing method of forming trenches with a mask having a minimum opening width of 20 nm or less. The plasma processing method of the present invention is characterized by including the steps of forming trenches by plasma etching, forming a nitride film on sidewalls of trenches using plasma, and forming an oxide film on sidewalls and bottom surfaces of the trenches using plasma.

摘要翻译： 本发明提供了一种等离子体处理方法，其中在利用具有最小开口宽度为20nm或更小的掩模形成沟槽的等离子体处理方法中可以抑制边缘和微加载。 本发明的等离子体处理方法的特征在于包括通过等离子体蚀刻形成沟槽的步骤，使用等离子体在沟槽的侧壁上形成氮化物膜，以及使用等离子体在沟槽的侧壁和底表面上形成氧化物膜。

公开(公告)号：US20130164911A1

公开(公告)日：2013-06-27

申请号：US13404162

申请日：2012-02-24

申请人： Toru ITO ,  Hiroaki Ishimura ,  Akito Kouchi ,  Hayato Watanabe

发明人： Toru ITO ,  Hiroaki Ishimura ,  Akito Kouchi ,  Hayato Watanabe

IPC分类号： H01L21/762

CPC分类号： H01L21/76229 ,  H01L21/3065 ,  H01L21/30655

摘要： The present invention provides a plasma processing method in which sideetching and microloading can be suppressed in a plasma processing method of forming trenches with a mask having a minimum opening width of 20 nm or less. The plasma processing method of the present invention is characterized by including the steps of forming trenches by plasma etching, forming a nitride film on sidewalls of trenches using plasma, and forming an oxide film on sidewalls and bottom surfaces of the trenches using plasma.

摘要翻译： 本发明提供了一种等离子体处理方法，其中在利用具有最小开口宽度为20nm或更小的掩模形成沟槽的等离子体处理方法中可以抑制边缘和微加载。 本发明的等离子体处理方法的特征在于包括通过等离子体蚀刻形成沟槽的步骤，使用等离子体在沟槽的侧壁上形成氮化物膜，以及使用等离子体在沟槽的侧壁和底表面上形成氧化物膜。

公开(公告)号：US08486291B2

公开(公告)日：2013-07-16

申请号：US13011070

申请日：2011-01-21

申请人： Takeshi Ohmori ,  Yasuhiro Nishimori ,  Hiroaki Ishimura ,  Hitoshi Kobayashi ,  Masamichi Sakaguchi

发明人： Takeshi Ohmori ,  Yasuhiro Nishimori ,  Hiroaki Ishimura ,  Hitoshi Kobayashi ,  Masamichi Sakaguchi

IPC分类号： C03C15/00

CPC分类号： H01J37/32816 ,  B08B7/0035 ,  H01J37/32834

摘要： In the present invention, provided is a plasma processing method which reduces or eliminates the emission of contaminating matters caused by a quality-altered layer on the surface of yttria of a processing chamber's inner wall and parts inside the processing chamber. It is the plasma processing method including an etching step of setting a sample inside the processing chamber, and etching the sample, a deposition-product removing step of removing a deposition product by using a plasma, the deposition product being deposited inside the processing chamber by the etching step, the plasma being generated using a gas which contains fluorine or chlorine, and a step of exposing, to a rare-gas-based plasma, the inside of the processing chamber after the deposition-product removing step.

摘要翻译： 在本发明中，提供了一种等离子体处理方法，其减少或消除由处理室的内壁和处理室内的部件的氧化钇的表面上的质量变化层引起的污染物质的排放。 等离子体处理方法包括在处理室内设置样品并蚀刻样品的蚀刻步骤，通过使用等离子体去除沉积产物的沉积产物去除步骤，沉积产物通过 蚀刻步骤，使用含有氟或氯的气体产生等离子体，以及在沉积物除去步骤之后将稀释气体等离子体暴露于处理室内部的步骤。