公开(公告)号：US09013146B2

公开(公告)日：2015-04-21

申请号：US13262761

申请日：2009-06-29

申请人： Shin Suzuki ,  Hiroaki Ueno

发明人： Shin Suzuki ,  Hiroaki Ueno

IPC分类号： H02J7/00 ,  H01M10/42 ,  H01M10/0525

CPC分类号： H01M10/4207 ,  H01M10/0525 ,  H02J7/0021 ,  H02J7/0026

摘要： A secondary battery pack of the present invention includes a secondary battery block 3 in which a plurality of unit blocks 2 are connected in series; battery adjustment sections 5 that are each provided for each of the unit blocks 2 and have a function of monitoring the voltage of secondary batteries and a function of adjusting the balance; a charge switch 8; and a discharge switch 9. The secondary battery pack includes transmission sections 17 that receive information from the corresponding battery adjustment sections 5. The transmission sections are connected to the preceding or subsequent transmission sections and are so set that at least either information input from the preceding transmission sections or information input from the battery adjustment sections 5 is output to the subsequent transmission sections. The transmission sections are equipped with a constant current transmission section that transmits with a constant value of current; and a current detection section that can detect the value of the constant current.

摘要翻译： 本发明的二次电池组包括其中多个单元块2串联连接的二次电池块3; 每个单元块2设置的电池调节部5具有监视二次电池的电压的功能和调整余量的功能; 充电开关8; 和放电开关9.二次电池组包括从相应的电池调节部分5接收信息的发送部分17.发送部分连接到前一个或后续发送部分，并且被设置为使得从前一个输入的至少一个信息 从电池调节部5输入的发送部或信息被输出到后续的发送部。 传动部分配备有恒定电流传输的恒流传输部分; 以及能够检测恒定电流值的电流检测部。

公开(公告)号：US08965660B2

公开(公告)日：2015-02-24

申请号：US13302568

申请日：2011-11-22

申请人： Toshiyuki Miyata ,  Katsunori Ueda ,  Koji Shibata ,  Hiroaki Ueno

发明人： Toshiyuki Miyata ,  Katsunori Ueda ,  Koji Shibata ,  Hiroaki Ueno

IPC分类号： F02D11/10 ,  F02D13/02 ,  F02D41/00

CPC分类号： F02D13/02 ,  F02D11/105 ,  F02D41/0002 ,  F02D2200/0408 ,  F02D2200/602 ,  F02D2250/18 ,  Y02T10/18 ,  Y02T10/42

摘要： A first calculation device is provided that calculates a ratio of a target torque equivalent value of an engine to a maximum torque equivalent value of the engine, as a pressure ratio equivalent value. A second calculation device is also provided that calculates a flow velocity of air to flowing through a throttle valve in the engine, based on the pressure ratio equivalent value calculated by the first calculation device. A third calculation device is further provided that calculates a target throttle valve opening, based on the flow velocity calculated by the second calculation device. With this configuration, the target opening of a throttle valve corresponding to the requested engine torque, without using the pressures before and after the throttle valve section.

摘要翻译： 提供了一种第一计算装置，其计算发动机的目标扭矩当量值与发动机的最大扭矩当量值的比率作为压力比等效值。 还提供了第二计算装置，其基于由第一计算装置计算的压力比等效值来计算在发动机中流过节流阀的空气的流速。 还提供第三计算装置，其基于由第二计算装置计算的流速计算目标节气门开度。 利用这种结构，在不使用节流阀部分之前和之后的压力的情况下，对应于所要求的发动机扭矩的节气门的目标开度。

公开(公告)号：US20120209493A1

公开(公告)日：2012-08-16

申请号：US13302568

申请日：2011-11-22

申请人： Toshiyuki MIYATA ,  Katsunori UEDA ,  Koji SHIBATA ,  Hiroaki UENO

发明人： Toshiyuki MIYATA ,  Katsunori UEDA ,  Koji SHIBATA ,  Hiroaki UENO

IPC分类号： G06F19/00 ,  B60K26/00

CPC分类号： F02D13/02 ,  F02D11/105 ,  F02D41/0002 ,  F02D2200/0408 ,  F02D2200/602 ,  F02D2250/18 ,  Y02T10/18 ,  Y02T10/42

摘要： A first calculation device is provided that calculates a ratio of a target torque equivalent value of an engine to a maximum torque equivalent value of the engine, as a pressure ratio equivalent value. A second calculation device is also provided that calculates a flow velocity of air to flowing through a throttle valve in the engine, based on the pressure ratio equivalent value calculated by the first calculation device. A third calculation device is further provided that calculates a target throttle valve opening, based on the flow velocity calculated by the second calculation device.With this configuration, the target opening of a throttle valve corresponding to the requested engine torque, without using the pressures before and after the throttle valve section.

摘要翻译： 提供了一种第一计算装置，其计算发动机的目标扭矩当量值与发动机的最大扭矩当量值的比率作为压力比等效值。 还提供了第二计算装置，其基于由第一计算装置计算的压力比等效值来计算在发动机中流过节流阀的空气的流速。 还提供第三计算装置，其基于由第二计算装置计算的流速计算目标节气门开度。 利用这种结构，在不使用节流阀部分之前和之后的压力的情况下，对应于所要求的发动机扭矩的节气门的目标开度。

公开(公告)号：US20120025770A1

公开(公告)日：2012-02-02

申请号：US13262761

申请日：2009-06-29

申请人： Shin Suzuki ,  Hiroaki Ueno

发明人： Shin Suzuki ,  Hiroaki Ueno

IPC分类号： H02J7/00

CPC分类号： H01M10/4207 ,  H01M10/0525 ,  H02J7/0021 ,  H02J7/0026

摘要： A secondary battery pack of the present invention includes a secondary battery block 3 in which a plurality of unit blocks 2 are connected in series; battery adjustment sections 5 that are each provided for each of the unit blocks 2 and have a function of monitoring the voltage of secondary batteries and a function of adjusting the balance; a charge switch 8; and a discharge switch 9. The secondary battery pack includes transmission sections 17 that receive information from the corresponding battery adjustment sections 5. The transmission sections are connected to the preceding or subsequent transmission sections and are so set that at least either information input from the preceding transmission sections or information input from the battery adjustment sections 5 is output to the subsequent transmission sections. The transmission sections are equipped with a constant current transmission section that transmits with a constant value of current; and a current detection section that can detect the value of the constant current.

摘要翻译： 本发明的二次电池组包括其中多个单元块2串联连接的二次电池块3; 每个单元块2设置的电池调节部5具有监视二次电池的电压的功能和调整余量的功能; 充电开关8; 和放电开关9.二次电池组包括从相应的电池调节部分5接收信息的发送部分17.发送部分连接到前一个或后续发送部分，并且被设置为使得从前一个输入的至少一个信息 从电池调节部5输入的发送部或信息被输出到后续的发送部。 传动部分配备有恒定电流传输的恒流传输部分; 以及能够检测恒定电流值的电流检测部。

公开(公告)号：US07859087B2

公开(公告)日：2010-12-28

申请号：US12637240

申请日：2009-12-14

申请人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tomohiro Murata ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L23/58

CPC分类号： H01L29/7787 ,  H01L23/367 ,  H01L23/3677 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

公开(公告)号：US20100302671A1

公开(公告)日：2010-12-02

申请号：US12788185

申请日：2010-05-26

申请人： Hiroaki Ueno ,  Masahiro Takagi ,  Takahisa Ueno ,  Hiroshi Isokawa

发明人： Hiroaki Ueno ,  Masahiro Takagi ,  Takahisa Ueno ,  Hiroshi Isokawa

IPC分类号： G11B5/02

CPC分类号： G11B5/455 ,  G11B5/4555 ,  G11B2005/0005

摘要： According to one embodiment, a magnetic recording device includes a write controller to control such that writing first information having a same polarity throughout the first information in a predetermined region including a plurality of tracks in a recording medium, writing second information in a target track located within or close to the predetermined region, and writing third information having, at an end of the writing, a polarity opposite to the polarity of the first information in a region of the target track in which the second information is not written, are performed; a read controller to control such that the second information is read after each of writing of the second information and writing of the third information; and a determiner to determine occurrence of pole erasing based on each second information read under the control by the read controller.

摘要翻译： 根据一个实施例，磁记录装置包括写入控制器，以便控制使得在包括记录介质中的多个磁道的预定区域中，通过整个第一信息写入具有相同极性的第一信息，将第二信息写入到位于 并且在写入结束时，写入具有与未写入第二信息的目标轨道的区域中与第一信息的极性相反的极性的第三信息; 读取控制器，用于控制，使得在每次写入第二信息和写入第三信息之后读取第二信息; 以及基于由读取控制器控制读取的每个第二信息来确定极点擦除的发生的确定器。

公开(公告)号：US20100123337A1

公开(公告)日：2010-05-20

申请号：US12616969

申请日：2009-11-12

申请人： Naoyuki Tamura ,  Koji Satoh ,  Hiroaki Ueno ,  Takeharu Endo

发明人： Naoyuki Tamura ,  Koji Satoh ,  Hiroaki Ueno ,  Takeharu Endo

IPC分类号： B62D25/00

CPC分类号： B62D25/02 ,  B62D25/025 ,  B62D25/2036

摘要： Outer side sill member includes an upper wall section slanting upward in a horizontal, outer-to-inner direction, and a lower wall section slanting downward in the horizontal, outer-to-inner direction. At least one of upper and lower wall sections of the outer side sill member has a channel-shaped bead extending along the side sill, so that the side sill has a polygonal closed sectional shape extending in the front-rear direction of the vehicle. The bead has a bottom portion having a width greater than a vertical dimension in a direction orthogonal to the surface of the bottom portion. Each of bulkheads, partitioning the interior of the side sill, is fixedly joined to the outer side sill member with its recessed edge portion substantially fittingly engaging with the bottom portion of the depressed wall portion of the outer side sill member.

摘要翻译： 外侧纵梁构件包括在水平方向，内外方向向上倾斜的上壁部和在水平方向，内外方向上向下倾斜的下壁部。 外侧纵梁构件的上壁部和下壁部中的至少一个具有沿着下纵梁延伸的通道形凸缘，使得下纵梁具有沿车辆前后方向延伸的多边形封闭截面形状。 胎圈具有在垂直于底部表面的方向上具有大于垂直尺寸的宽度的底部。 分隔下梁的内部的每个隔板固定地接合到外侧门槛构件，其凹边缘部分基本上与外侧槛构件的凹陷壁部分的底部嵌合。

公开(公告)号：US20100090250A1

公开(公告)日：2010-04-15

申请号：US12637240

申请日：2009-12-14

申请人： Tomohiro MURATA ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

发明人： Tomohiro MURATA ,  Hiroaki Ueno ,  Hidetoshi Ishida ,  Tetsuzo Ueda ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka ,  Daisuke Ueda

IPC分类号： H01L29/205 ,  H01L29/772 ,  H01L29/06

CPC分类号： H01L29/7787 ,  H01L23/367 ,  H01L23/3677 ,  H01L29/2003 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes: a semiconductor layer; at least one electrode formed on a semiconductor layer to be in contact with the semiconductor layer; and a passivation film covering the semiconductor layer and at least part of the top surface of the electrode to protect the semiconductor layer and formed of a plurality of sub-films. The passivation film includes a first sub-film made of aluminum nitride.

摘要翻译： 半导体器件包括：半导体层; 形成在与半导体层接触的半导体层上的至少一个电极; 以及覆盖半导体层和电极的顶表面的至少一部分的钝化膜，以保护半导体层并由多个子膜形成。 钝化膜包括由氮化铝制成的第一子膜。

公开(公告)号：US07605441B2

公开(公告)日：2009-10-20

申请号：US11730422

申请日：2007-04-02

申请人： Kazushi Nakazawa ,  Hiroaki Ueno ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

发明人： Kazushi Nakazawa ,  Hiroaki Ueno ,  Manabu Yanagihara ,  Yasuhiro Uemoto ,  Tsuyoshi Tanaka

IPC分类号： H01L27/095 ,  H01L21/28 ,  H01L29/47

CPC分类号： H01L29/872 ,  H01L29/2003 ,  H01L29/66212

摘要： A semiconductor device includes: a semiconductor layer made of a group-III nitride semiconductor and having a first surface and a second surface opposed to the first surface; a Schottky electrode formed on the first surface of the semiconductor layer; and an ohmic electrode electrically connected to the second surface of the semiconductor layer. The semiconductor layer has, in at least the upper portion thereof, highly-resistive regions selectively formed to have a high resistance.

摘要翻译： 半导体器件包括：由III族氮化物半导体制成并具有与第一表面相对的第一表面和第二表面的半导体层; 形成在半导体层的第一表面上的肖特基电极; 以及与半导体层的第二表面电连接的欧姆电极。 半导体层至少在其上部具有选择性地形成为具有高电阻的高电阻区域。

公开(公告)号：US20090121775A1

公开(公告)日：2009-05-14

申请号：US11995040

申请日：2006-06-27

申请人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

发明人： Daisuke Ueda ,  Tsuyoshi Tanaka ,  Yasuhiro Uemoto ,  Tetsuzo Ueda ,  Manabu Yanagihara ,  Masahiro Hikita ,  Hiroaki Ueno

IPC分类号： H01L29/207 ,  H03K17/687

CPC分类号： H01L29/739 ,  H01L29/1066 ,  H01L29/2003 ,  H01L29/4175 ,  H01L29/7786

摘要： In a transistor, an AlN buffer layer 102, an undoped GaN layer 103, an undoped AlGaN layer 104, a p-type control layer 105, and a p-type contact layer 106 are formed in this order on a sapphire substrate 101. The transistor further includes a gate electrode 110 in ohmic contact with the p-type contact layer 106, and a source electrode 108 and a drain electrode 109 provided on the undoped AlGaN layer 104. By applying a positive voltage to the p-type control layer 105, holes are injected into a channel to increase a current flowing in the channel.

摘要翻译： 在晶体管中，在蓝宝石衬底101上依次形成AlN缓冲层102，未掺杂的GaN层103，未掺杂的AlGaN层104，p型控制层105和p型接触层106。 晶体管还包括与p型接触层106欧姆接触的栅电极110以及设置在未掺杂的AlGaN层104上的源电极108和漏极109.通过向p型控制层105施加正电压 ，孔被注入到通道中以增加在通道中流动的电流。