公开(公告)号：US20110209829A1

公开(公告)日：2011-09-01

申请号：US13003161

申请日：2009-09-16

申请人： Takashi Umeoka ,  Hirofumi Yagisawa ,  Satoshi Mayumi

发明人： Takashi Umeoka ,  Hirofumi Yagisawa ,  Satoshi Mayumi

IPC分类号： C23F1/08

CPC分类号： H01J37/32376 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32761 ,  H01J37/32834 ,  H01L21/3065 ,  H01L21/67051 ,  H01L21/6776

摘要： To stabilize a gas flow at an opening which is provided in a treatment housing for surface treatment, and through which an object is carried in or out. An object 9 is carried through a carry-in opening 13 into a treatment housing 10 along a conveying direction and placed in a treatment space 19. A treatment gas is supplied by a supply system 30 into the treatment space 19 and the object 9 is subjected to surface treatment. The object 9 is carried out through a carry-out opening 14. An exhaust system 40 discharges gas from the treatment housing 10. Each of the openings 13 and 14 is defined by a pair of flow-rectifying faces 17 and 18, which face each other with an interval D therebetween in a direction perpendicular to the conveying direction. A depth L of the openings 13 and 14 along the conveying direction is twice or more, and more preferably six or more, of the interval D.

摘要翻译： 为了稳定在设置在用于表面处理的处理壳体中的开口处的气体流动，并且物体被携带在外部。 物体9沿着输送方向通过进入口13被输送到处理壳体10中并放置在处理空间19中。处理气体由供给系统30供给到处理空间19中，物体9受到 进行表面处理。 物体9通过进出口14进行。排气系统40从处理壳体10排出气体。开口13和14中的每一个由一对流动整流面17和18限定，每个流动整流面17和18面对每个 另一个在与输送方向垂直的方向上具有间隔D。 沿着输送方向的开口13,14的深度L是间隔D的两倍以上，更优选为6以上。

公开(公告)号：US20110174775A1

公开(公告)日：2011-07-21

申请号：US13120196

申请日：2009-09-16

申请人： Takashi Umeoka ,  Hirofumi Yagisawa ,  Satoshi Mayumi ,  Takashi Satoh ,  Shunsuke Kunugi

发明人： Takashi Umeoka ,  Hirofumi Yagisawa ,  Satoshi Mayumi ,  Takashi Satoh ,  Shunsuke Kunugi

IPC分类号： C23F1/00 ,  C23C16/455 ,  C23C16/458 ,  C23C16/52 ,  C23F1/08

CPC分类号： H01J37/32752 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/67069

摘要： To prevent a processing gas from leaking from a processing tank for processing a surface of a substrate and to stabilize flow of the processing gas in a processing space.A substrate 9 is conveyed into the inside of a processing tank 10 through an entrance port 13 by a conveyor 20 and positioned in a processing space 19. A processing gas is supplied to the processing space 19 by a supply system 30, and the substrate 9 is surface processed. Subsequently, the substrate 9 is conveyed out through an exit port 14. Gas inside of the processing tank 10 is exhausted by an exhaust system 40. The exhausting of gas causes gas outside of the processing tank 10 to inflow into the inside of the processing tank 10 through the openings 13, 14 such that an average flow velocity of the inflow gas is at least 0.1 m/sec yet smaller than a velocity that would allow the inflow gas to reach the processing space 19.

摘要翻译： 为了防止处理气体从用于处理基板的表面的处理槽泄漏并且稳定处理空间中的处理气体的流动。 基板9通过输送机20通过入口13输送到处理槽10的内部，并位于处理空间19中。处理气体通过供应系统30供给处理空间19，基板9 进行表面处理。 随后，基板9通过出口14输出。处理槽10内的气体被排气系统40排出。气体的排出导致处理槽10外部的气体流入处理槽的内部 通过开口13,14，使得流入气体的平均流速至少为0.1m / sec，但仍小于允许流入气体到达处理空间19的速度。