摘要:
A semiconductor device includes a plurality of memory mats arranged in an X direction and a mat selecting circuit that activates a part of the memory mats based on a row address and maintains the rest of the memory mats inactivated. The memory mats are divided into a plurality of memory mat groups each including the same number of memory mats arranged in the X direction. The mat selecting circuit activates at least one of the memory mats included in each of the memory mat groups, while maintaining the rest of memory mats inactivated. With this operation, a portion of discontinuity does not occur in the memory mats arranged in the X direction, and thus the necessity of arranging two sub-word driver areas in the portion of discontinuity is eliminated.
摘要:
A semiconductor device includes a first driver circuit for supplying a first potential to a first power supply node of the sense amplifier, second and third driver circuits for supplying a second potential and a third potential to a second power supply node of the sense amplifier, and a timing control circuit for controlling operations of the first to third driver circuits. The timing control circuit includes a delay circuit for deciding an ON period of the third driver circuit. The delay circuit includes a first delay circuit having a delay amount that depends on an external power supply potential and a second delay circuit having a delay amount that does not depend on the external power supply potential, and the ON period of the third driver circuit is decided based on a sum of the delay amounts of the first and second delay circuits.
摘要:
A semiconductor device according to the present invention has an address scrambling circuit for performing address scrambling operation of an address and a redundancy judging circuit for judging that redundancy judgment is performed about the address scrambled by the address scrambling circuit. This structure makes it possible to completely refresh operation concerned with normal word lines and redundancy word lines.
摘要:
A device includes a decoder, a selector, and a plurality of registers. The decoder is configured to generate a plurality of test signals. The selector is coupled to the decoder. The selector is configured to sequentially select a test signal from the plurality of test signals and to sequentially output the test signal selected. The plurality of registers is coupled in series to each other. The plurality of registers includes a first stage register. The first stage register is coupled to the selector to sequentially receive the test signal from the selector.
摘要:
A semiconductor device includes: two level shift circuits having substantially the same circuit configuration; an input circuit that supplies complementary input signals to the level shift circuits, respectively; and an output circuit that converts complementary output signals output from the level shift circuits into in-phase signals and then short-circuits the in-phase signals. According to the present invention, the two level shift circuits having substantially the same circuit configuration are used, and the complementary output signals output from the level shift circuits are converted into in-phase signals before short-circuited. This avoids almost any occurrence of a through current due to a difference in operating speed between the level shift circuits.
摘要:
A semiconductor device includes a memory cell array that is divided into a plurality of memory cell mats by a plurality of sense amplifier arrays. Each of the plurality of memory cell mats includes a plurality of word lines and a test circuit for performing a test control to activate, at one time, a plurality of word lines included in each of a plurality of selected memory cell mats that are not disposed adjacent each other in the plurality of memory cell mats. The memory cell mats with the plurality of activated word lines are distributed. Therefore, the load applied to a driver circuit for driving word lines and the load applied to a power supply circuit for supplying an operation voltage to the driver circuit are reduced
摘要:
A direct sense amplifier of the present invention incorporates and isolates: an MOS transistor serving as a differential pair and having a gate connected to a bit line; and an MOS transistor controlled by a column select line wired between RLIO lines in a bit-line direction, and further connects a source of the MOS transistor serving as the differential pair to a common source line wired in the word-line direction. Since the direct sense amplifier only in a select map is activated by the column select line and the common source line during an read operation, power consumption is significantly reduced during the read operation. Also, since a parasitic capacitance of the MOS transistor serving as the differential pair is separated from the local IO line, a load capacity of the local IO line is reduced and the read operation is speeded up. In addition, during the read operation, a data pattern dependency of the load capacity of the local IO line is reduced and a post-manufacture test is easily made.
摘要:
A semiconductor memory device includes a row control circuit block and a column control circuit block each performing an access control over a memory cell array, a data I/O circuit block transmitting and receiving data to and from the memory cell array, and a control circuit changing at least a part of the row control circuit block, the column control circuit block, and the data I/O circuit block from a standby state into an active state in response to a setting of a predetermined mode signal to a mode register. According to the present invention, even if it is necessary to turn predetermined circuit blocks into the active state by an operation other than a read or write operation, there is no need to always set these circuit blocks into the active state.
摘要:
A direct sense amplifier of the present invention incorporates and isolates: an MOS transistor serving as a differential pair and having a gate connected to a bit line; and an MOS transistor controlled by a column select line wired between RLIO lines in a bit-line direction, and further connects a source of the MOS transistor serving as the differential pair to a common source line wired in the word-line direction. Since the direct sense amplifier only in a select map is activated by the column select line and the common source line during an read operation, power consumption is significantly reduced during the read operation. Also, since a parasitic capacitance of the MOS transistor serving as the differential pair is separated from the local IO line, a load capacity of the local IO line is reduced and the read operation is speeded up. In addition, during the read operation, a data pattern dependency of the load capacity of the local IO line is reduced and a post-manufacture test is easily made.
摘要:
A direct sense amplifier of the present invention incorporates and isolates: an MOS transistor serving as a differential pair and having a gate connected to a bit line; and an MOS transistor controlled by a column select line wired between RLIO lines in a bit-line direction, and further connects a source of the MOS transistor serving as the differential pair to a common source line wired in the word-line direction. Since the direct sense amplifier only in a select map is activated by the column select line and the common source line during an read operation, power consumption is significantly reduced during the read operation. Also, since a parasitic capacitance of the MOS transistor serving as the differential pair is separated from the local IO line, a load capacity of the local IO line is reduced and the read operation is speeded up. In addition, during the read operation, a data pattern dependency of the load capacity of the local IO line is reduced and a post-manufacture test is easily made.