公开(公告)号：US09531212B2

公开(公告)日：2016-12-27

申请号：US13810835

申请日：2012-06-13

申请人： Hiroo Hongo ,  Kenji Kobayashi ,  Koji Kudo ,  Kenichi Ishii ,  Takayuki Nyu

发明人： Hiroo Hongo ,  Kenji Kobayashi ,  Koji Kudo ,  Kenichi Ishii ,  Takayuki Nyu

IPC分类号： G06F17/50 ,  H02J7/00 ,  H01M10/44 ,  H01M10/48 ,  H02J3/32 ,  H01M4/505 ,  H01M10/052 ,  H01M10/42

CPC分类号： H02J7/007 ,  H01M4/505 ,  H01M10/052 ,  H01M10/44 ,  H01M10/441 ,  H01M10/48 ,  H01M10/482 ,  H01M2010/4271 ,  H02J3/32 ,  H02J7/0013 ,  H02J7/0021 ,  H02J7/0063 ,  H02J7/0073 ,  H02J2007/0067 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7055

摘要： A secondary battery has a progressively degrading SOC that is an SOC at which the battery performance degrades during storage, and is charged and discharged by a controller. An information processor holds a first threshold value set in advance and lower than the progressively degrading SOC of the secondary battery, and a second threshold value set in advance and higher than the progressively degrading SOC, makes the controller continue an operation to charge the secondary battery from the first threshold value to the second threshold value at the time of charging the secondary battery based on the value of the SOC of the secondary battery detected by the controller, and makes the controller continue an operation to discharge the secondary battery from the second threshold value to the first threshold value at the time of discharging the secondary battery based on the value of the SOC of the secondary battery detected by the controller.

摘要翻译： 二次电池具有逐渐劣化的SOC，其是在存储期间电池性能劣化的SOC，并且由控制器充电和放电。 信息处理器保持预先设定的低于二次电池的逐渐劣化的SOC的第一阈值和预先设定为高于逐渐劣化的SOC的第二阈值，使得控制器继续对二次电池充电的操作 基于由控制器检测到的二次电池的SOC的值，从二次电池充电时的第一阈值到第二阈值，并使控制器继续进行从第二阈值排出二次电池的操作 基于由控制器检测到的二次电池的SOC的值，在二次电池放电时的值为第一阈值。

公开(公告)号：US09513141B2

公开(公告)日：2016-12-06

申请号：US13513584

申请日：2010-10-15

申请人： Koji Kudo ,  Yukiko Morioka ,  Hiroo Hongo ,  Hisato Sakuma

发明人： Koji Kudo ,  Yukiko Morioka ,  Hiroo Hongo ,  Hisato Sakuma

IPC分类号： G01D4/00 ,  H02J13/00

CPC分类号： G01D4/004 ,  G01D4/002 ,  H02J13/0006 ,  Y02B70/3266 ,  Y02B90/242 ,  Y02B90/246 ,  Y04S20/242 ,  Y04S20/322 ,  Y04S20/42

摘要： An electric device has an electric power measurement unit with an electric power detection element measuring consumed electric power and an information communication element transmitting the measured power. An electric power meter has an information communication element measuring and transmitting total electric power consumed indoors. An information processing unit stores the measured values in every predetermined sampling period. If a difference α of two measurement values of the electric power detection element is a finite value, the information processing unit calculates and stores both a difference β of two measurement values of the electric power meter corresponding to the two measurement values and β/α, and calibrates the amount of electric power consumed by the electric device and that is measured by the electric power detection element using a median of values of β/α obtained in a predetermined measurement period or a median of a predetermined number of values of β/α.

摘要翻译： 电气设备具有电力测量单元，其具有测量消耗电力的电力检测元件和传送测量功率的信息通信元件。 电力计具有测量和传送室内消耗的总电力的信息通信元件。 信息处理单元在每个预定采样周期中存储测量值。 如果电力检测元件的两个测量值的差值α为有限值，则信息处理单元计算并存储与两个测量值相对应的电力计量器的两个测量值的差值β和β/α， 并且校准由电气设备消耗的电力量，并且由电力检测元件使用在预定测量周期中获得的β/α值的中值或预定数量的β/α的中值来测量的电力量 。

公开(公告)号：US20140197798A1

公开(公告)日：2014-07-17

申请号：US14237909

申请日：2012-06-13

申请人： Hiroo Hongo ,  Koji Kudo ,  Kenichi Ishii ,  Kenji Kobayashi ,  Takayuki Nyu

发明人： Hiroo Hongo ,  Koji Kudo ,  Kenichi Ishii ,  Kenji Kobayashi ,  Takayuki Nyu

IPC分类号： H02J7/00

CPC分类号： H02J7/0068 ,  H01M4/505 ,  H01M10/052 ,  H01M10/44 ,  H01M2010/4271 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011

摘要： A secondary battery has a progressively deteriorating SOC in which battery performance deteriorates when the secondary battery is stored, and is charged and discharged by a control device. An information processing device stores a preset first threshold smaller than the progressively deteriorating SOC of the secondary battery and a preset second threshold greater than the progressively deteriorating SOC, and separates the range from the minimum SOC to the maximum SOC of the secondary battery into, at least, two regions by setting the section from the first threshold to the second threshold as a boundary to thereby cause the control device to charge or discharge the secondary battery within any of the above regions.

摘要翻译： 二次电池在存储二次电池时电池性能恶化的SOC逐渐恶化，并且通过控制装置进行充放电。 信息处理装置存储比二次电池的逐渐劣化的SOC小的预设的第一阈值和大于逐渐恶化的SOC的预设的第二阈值，并且将从最小SOC到最小SOC的范围分离成 至少两个区域通过将从第一阈值到第二阈值的部分设置为边界，从而使得控制装置在任何上述区域内对二次电池进行充电或放电。

公开(公告)号：US07658798B2

公开(公告)日：2010-02-09

申请号：US10564750

申请日：2004-07-20

申请人： Masahiko Ishida ,  Hiroo Hongo ,  Jun-ichi Fujita

发明人： Masahiko Ishida ,  Hiroo Hongo ,  Jun-ichi Fujita

IPC分类号： C30B25/12

CPC分类号： H01L21/321 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  C01B2202/06 ,  C01B2202/36 ,  G03F7/0047 ,  H01L21/76876 ,  H01L2221/1094

摘要： A metal fine particle is adhere to a predetermined location on a substrate. A resist film containing a metallic compound dispersed therein is formed on a substrate (101). A patterning of the resist film is conducted by a lithography. The substrate (101) having the patterned resist formed thereon is heated within an oxygen atmosphere to adhere a metal fine particle (106) to the surface of the substrate (101), while removing the resin in the patterned resist.

摘要翻译： 金属微粒附着在基板上的规定位置。 在基板（101）上形成含有分散在其中的金属化合物的抗蚀剂膜。 抗蚀剂膜的图案化通过光刻进行。 其中形成有图案化抗蚀剂的衬底（101）在氧气氛中被加热，以将金属微粒（106）粘附到衬底（101）的表面，同时去除图案化抗蚀剂中的树脂。

公开(公告)号：US07582507B2

公开(公告)日：2009-09-01

申请号：US10523418

申请日：2003-07-28

申请人： Hiroo Hongo

发明人： Hiroo Hongo

IPC分类号： H01L51/40

CPC分类号： B82Y30/00 ,  B01J21/04 ,  B01J21/06 ,  B01J21/063 ,  B01J23/16 ,  B01J23/46 ,  B01J23/70 ,  B01J23/745 ,  B01J35/0006 ,  B01J37/0018 ,  B01J37/024 ,  B82Y10/00 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/02 ,  H01L51/0048 ,  H01L51/0052 ,  Y10S438/903 ,  Y10S977/742 ,  Y10S977/75

摘要： A catalyst supporting substrate includes a first region (54) which is formed on a substrate (50); and a second region (55) which is formed covering a part of the first region. The first region (54) includes a catalyst supporting portion (54a) containing a first material. The second region (55) includes a catalyst portion (55) containing a second material which is different from the first material. The first material includes a metal containing at least one of elements selected from the second group to the fourteenth group of the periodic table or a compound thereof. The second material is a catalyst which grows carbon nanotubes in a vapor phase.

摘要翻译： 催化剂支撑基板包括形成在基板（50）上的第一区域（54）; 以及形成为覆盖所述第一区域的一部分的第二区域（55）。 第一区域（54）包括含有第一材料的催化剂支撑部分（54a）。 第二区域（55）包括含有与第一材料不同的第二材料的催化剂部分（55）。 第一材料包括含有选自周期表第二组至第十四组中的至少一种元素的金属或其化合物。 第二种材料是在气相中生长碳纳米管的催化剂。

公开(公告)号：US20090181535A1

公开(公告)日：2009-07-16

申请号：US12406487

申请日：2009-03-18

申请人： Toshitsugu SAKAMOTO ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

发明人： Toshitsugu SAKAMOTO ,  Hisao Kawaura ,  Toshio Baba ,  Fumiyuki Nihey ,  Yukinori Ochiai ,  Hiroo Hongo

IPC分类号： H01L21/4763

CPC分类号： H01L21/76838 ,  B82Y10/00 ,  H01L21/288 ,  H01L21/76843 ,  H01L21/76876 ,  H01L21/76877 ,  H01L21/76879 ,  H01L23/53276 ,  H01L2221/1094 ,  H01L2924/0002 ,  H01L2924/00

摘要： Scale down design has posed problems in an increase in the resistance value of an interconnection structure and a decrease in the resistance to electromigration and stress migration. The present invention provides an interconnection structure of a high-reliability semiconductor device which has a low resistance value even in the case of scale down design and does not produce electromigration or stress migration, and a method of manufacturing the interconnection structure. Provided are a semiconductor device which has an interconnection or a connection plug, both of which are fabricated from a mixture of a metal and carbon nanotubes, in an interconnection trench or a via hole, both of which are formed on an insulating film on a substrate on which a semiconductor device element is formed, and a method of manufacturing this semiconductor device.

摘要翻译： 缩小设计在互连结构的电阻值的增加和电迁移和应力迁移的阻力降低方面存在问题。 本发明提供即使在缩小设计的情况下也具有低电阻值并且不产生电迁移或应力迁移的高可靠性半导体器件的互连结构，以及制造互连结构的方法。 提供一种半导体器件，其具有互连或连接插头，它们都由互连沟槽或通孔中的金属和碳纳米管的混合物制成，它们都形成在衬底上的绝缘膜上 其上形成有半导体器件元件，以及制造该半导体器件的方法。

公开(公告)号：US06424052B1

公开(公告)日：2002-07-23

申请号：US09154250

申请日：1998-09-16

申请人： Yasuyuki Miyamoto ,  Hiroo Hongo

发明人： Yasuyuki Miyamoto ,  Hiroo Hongo

IPC分类号： H01L23544

CPC分类号： H01J37/3045 ,  H01J2237/30438 ,  H01J2237/3175 ,  H01L23/544 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

摘要： An alignment mark for use in electron beam lithography for manufacturing a fine semiconductor structure by repeating a regrowth of a compound semiconductor layer and a fine process including electron beam exposure. The alignment mark includes a lower protection layer made of tungsten formed on a compound semiconductor substrate, a mark main body made of gold, chromium or platinum shaped into a desired pattern having a sharp edge profile which generates a detection signal of a mark position having a large gain, and an upper protection layer covering the mark main body and made of silicon oxide which does not react significantly with substances constituting a compound semiconductor layer. The mark main body has a thickness which is not less than 100 nm.

摘要翻译： 用于电子束光刻的对准标记，用于通过重复化合物半导体层的再生长和包括电子束曝光的精细工艺来制造精细的半导体结构。 对准标记包括形成在化合物半导体衬底上的由钨制成的下保护层，由金，铬或铂制成的具有尖锐边缘轮廓的所需图案的标记主体，其形成具有尖锐边缘轮廓的标记位置的检测信号， 大的增益和覆盖标记主体并由与构成化合物半导体层的物质不显着反应的氧化硅制成的上保护层。 标记主体的厚度不小于100nm。

公开(公告)号：US20130175997A1

公开(公告)日：2013-07-11

申请号：US13810835

申请日：2012-06-13

申请人： Hiroo Hongo ,  Kenji Kobayashi ,  Koji Kudo ,  Kenichi Ishii ,  Takayuki Nyu

发明人： Hiroo Hongo ,  Kenji Kobayashi ,  Koji Kudo ,  Kenichi Ishii ,  Takayuki Nyu

IPC分类号： H02J7/00

CPC分类号： H02J7/007 ,  H01M4/505 ,  H01M10/052 ,  H01M10/44 ,  H01M10/441 ,  H01M10/48 ,  H01M10/482 ,  H01M2010/4271 ,  H02J3/32 ,  H02J7/0013 ,  H02J7/0021 ,  H02J7/0063 ,  H02J7/0073 ,  H02J2007/0067 ,  Y02E60/122 ,  Y02P70/54 ,  Y02T10/7011 ,  Y02T10/7055

摘要： A secondary battery has a progressively degrading SOC that is an SOC at which the battery performance degrades during storage, and is charged and discharged by a controller. An information processor holds a first threshold value set in advance and lower than the progressively degrading SOC of the secondary battery, and a second threshold value set in advance and higher than the progressively degrading SOC, makes the controller continue an operation to charge the secondary battery from the first threshold value to the second threshold value at the time of charging the secondary battery based on the value of the SOC of the secondary battery detected by the controller, and makes the controller continue an operation to discharge the secondary battery from the second threshold value to the first threshold value at the time of discharging the secondary battery based on the value of the SOC of the secondary battery detected by the controller.

摘要翻译： 二次电池具有逐渐劣化的SOC，其是在存储期间电池性能劣化的SOC，并且由控制器充电和放电。 信息处理器保持预先设定的低于二次电池的逐渐劣化的SOC的第一阈值和预先设定为高于逐渐劣化的SOC的第二阈值，使得控制器继续对二次电池充电的操作 基于由控制器检测到的二次电池的SOC的值，从二次电池充电时的第一阈值到第二阈值，并使控制器继续进行从第二阈值排出二次电池的操作 基于由控制器检测到的二次电池的SOC的值，在二次电池放电时的值为第一阈值。

公开(公告)号：US20130009605A1

公开(公告)日：2013-01-10

申请号：US13265414

申请日：2011-02-17

申请人： Hiroo Hongo ,  Koji Kudo ,  Hisato Sakuma ,  Ryosuke Kuribayashi

发明人： Hiroo Hongo ,  Koji Kudo ,  Hisato Sakuma ,  Ryosuke Kuribayashi

IPC分类号： H02J7/00

CPC分类号： H02J7/0026 ,  H01M4/505 ,  H01M10/0525 ,  H01M10/441 ,  Y02T10/7011 ,  Y02T10/7055

摘要： A first threshold that is lower than a progressively deteriorating SOC that is an SOC in which a battery performance of the lithium ion secondary battery deteriorates when the lithium ion secondary battery is stored and a second threshold that is greater than the progressively deteriorating SOC are preset. A computer controls a switch provided between electric wires and the lithium ion secondary battery, an electric power supply source that supplies electric power necessary to charge the lithium ion secondary battery and a load that consumes electric power discharged from the lithium ion secondary battery are connected to the electric wires, such that a charging operation for the lithium ion secondary battery is continued from the first threshold to the second threshold when the lithium ion secondary battery is charged based on value of the SOC of the lithium ion secondary battery, the value of the SOC is transmitted from a monitor device that detects the value of the SOC of the lithium ion secondary battery and that controls the switch such that a discharging operation for the lithium ion secondary battery is continued from the second threshold to the first threshold when the lithium ion secondary battery is discharged.

摘要翻译： 预先设定低于逐渐劣化的SOC的第一阈值，SOC是作为锂离子二次电池的电池性能在存储时劣化的SOC，并且预先设定大于逐渐劣化的SOC的第二阈值的SOC。 计算机控制在电线和锂离子二次电池之间提供的开关，提供对锂离子二次电池充电所需的电力的电力供应源和消耗从锂离子二次电池放电的电力的负载连接到 使得当基于锂离子二次电池的SOC的值对锂离子二次电池进行充电时，锂离子二次电池的充电操作从第一阈值继续到第二阈值， 从检测锂离子二次电池的SOC的值的监视装置发送SOC，并且控制开关，使得锂离子二次电池的放电操作从第二阈值持续到第一阈值时，锂离子 二次电池放电。

公开(公告)号：US08222642B2

公开(公告)日：2012-07-17

申请号：US12451005

申请日：2008-04-16

申请人： Hiroo Hongo

发明人： Hiroo Hongo

IPC分类号： H01L29/786

CPC分类号： H01L29/78645 ,  H01L27/124

摘要： A field-effect type transistor has: a source electrode; a drain electrode being a metal electrode; a semiconductor layer provided to be in contact with both of the source electrode and the drain electrode; and a gate electrode provided to face at least a part of the semiconductor layer. The gate electrode has: a first gate electrode; and a second gate electrode provided closer to the drain electrode than the first gate electrode is. The second gate electrode is so connected as to have a same potential as the drain electrode and is electrically isolated from the first gate electrode. Consequently, in a display device, the off-leakage current is suppressed, and reduction in a pixel area and a bus interconnection width is suppressed.

摘要翻译： 场效应型晶体管具有：源电极; 漏电极是金属电极; 设置成与源极电极和漏极电极接触的半导体层; 以及设置成面对所述半导体层的至少一部分的栅电极。 栅电极具有：第一栅电极; 并且比第一栅电极更靠近漏电极设置的第二栅电极。 第二栅电极被连接成具有与漏电极相同的电位，并与第一栅极电隔离。 因此，在显示装置中，抑制了泄漏电流，并且抑制了像素区域和总线互连宽度的减小。