公开(公告)号：US09029869B2

公开(公告)日：2015-05-12

申请号：US13034264

申请日：2011-02-24

申请人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Makoto Mizukami ,  Takuma Suzuki ,  Johji Nishio

发明人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Makoto Mizukami ,  Takuma Suzuki ,  Johji Nishio

IPC分类号： H01L29/15 ,  H01L29/739 ,  H01L29/10 ,  H01L29/66

CPC分类号： H01L29/7395 ,  H01L29/1033 ,  H01L29/66333

摘要： One embodiment of a semiconductor device includes: a silicon carbide substrate including first and second principal surfaces; a first-conductive-type silicon carbide layer on the first principal surface; a second-conductive-type first silicon carbide region at a surface of the first silicon carbide layer; a first-conductive-type second silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type third silicon carbide region at the surface of the first silicon carbide region; a second-conductive-type fourth silicon carbide region formed between the first silicon carbide region and the second silicon carbide region, and having an impurity concentration higher than that of the first silicon carbide region; a gate insulator; a gate electrode formed on the gate insulator; an inter-layer insulator; a first electrode connected to the second silicon carbide region and the third silicon carbide region; and a second electrode on the second principal surface.

摘要翻译： 半导体器件的一个实施例包括：包含第一和第二主表面的碳化硅衬底; 第一主表面上的第一导电型碳化硅层; 在所述第一碳化硅层的表面处的第二导电型第一碳化硅区域; 在第一碳化硅区域的表面处的第一导电型第二碳化硅区域; 在第一碳化硅区域的表面处的第二导电型第三碳化硅区域; 在第一碳化硅区域和第二碳化硅区域之间形成的杂质浓度高于第一碳化硅区域的第二导电型第四碳化硅区域; 栅极绝缘体; 形成在栅极绝缘体上的栅电极; 层间绝缘体; 连接到所述第二碳化硅区域和所述第三碳化硅区域的第一电极; 和在第二主表面上的第二电极。

公开(公告)号：US08932926B2

公开(公告)日：2015-01-13

申请号：US12554369

申请日：2009-09-04

申请人： Hiroshi Kono ,  Takuma Suzuki

发明人： Hiroshi Kono ,  Takuma Suzuki

IPC分类号： H01L21/336 ,  H01L21/04 ,  H01L29/16 ,  H01L29/66

CPC分类号： H01L21/0465 ,  H01L29/1608 ,  H01L29/66068

摘要： A method for manufacturing a semiconductor device, includes forming a gate oxide film on an SiC region by a first thermal oxidation treatment in a first oxidizing atmosphere, performing a second thermal oxidation treatment at an oxidation speed of at most 5 nm/hour in a second oxidizing atmosphere having a lower oxygen concentration than the first oxidizing atmosphere, to increase film thickness of the gate oxide film, after the first thermal oxidation treatment, and forming a gate electrode on the gate oxide film with the increased film thickness.

摘要翻译： 一种半导体器件的制造方法，其特征在于，在第一氧化气氛中，通过第一热氧化处理，在SiC区域上形成栅极氧化膜，在第二氧化处理中以至少5nm /小时的氧化速度进行第二次热氧化处理 具有比第一氧化气氛低的氧浓度的氧化气氛，以在第一热氧化处理之后增加栅极氧化膜的膜厚度，并且在栅极氧化膜上形成具有增加的膜厚度的栅电极。

公开(公告)号：US08569795B2

公开(公告)日：2013-10-29

申请号：US13217472

申请日：2011-08-25

申请人： Hiroshi Kono ,  Yukio Nakabayashi ,  Takashi Shinohe ,  Makoto Mizukami

发明人： Hiroshi Kono ,  Yukio Nakabayashi ,  Takashi Shinohe ,  Makoto Mizukami

IPC分类号： H01L33/32 ,  H01L29/80 ,  H01L29/16 ,  H01L27/11 ,  H01L27/10

CPC分类号： H01L29/7802 ,  H01L21/049 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/4236 ,  H01L29/45 ,  H01L29/4966 ,  H01L29/66068 ,  H01L29/7813

摘要： A semiconductor device of an embodiment includes: a silicon carbide substrate including first and second principal surfaces; a first conductive-type first silicon carbide layer provided on the first principal surface of the silicon carbide substrate; a second conductive-type first silicon carbide region formed on a surface of the first silicon carbide layer; a first conductive-type second silicon carbide region formed on a surface of the first silicon carbide region; a second conductive-type third silicon carbide region formed on the surface of the first silicon carbide region; a gate insulating film continuously formed on the surfaces of the first silicon carbide layer, the first silicon carbide region, and the second silicon carbide region; a first electrode formed of silicon carbide formed on the gate insulating film; a second electrode formed on the first electrode; an interlayer insulating film for covering the first and second electrodes; a third electrode electrically connected to the second silicon carbide region and the third silicon carbide region; and a fourth electrode formed on the second principal surface of the silicon carbide substrate.

摘要翻译： 实施例的半导体器件包括：碳化硅衬底，其包括第一和第二主表面; 设置在碳化硅衬底的第一主表面上的第一导电型第一碳化硅层; 形成在所述第一碳化硅层的表面上的第二导电型第一碳化硅区; 形成在所述第一碳化硅区域的表面上的第一导电型第二碳化硅区域; 形成在所述第一碳化硅区域的表面上的第二导电型第三碳化硅区域; 连续形成在所述第一碳化硅层，所述第一碳化硅区域和所述第二碳化硅区域的表面上的栅极绝缘膜; 形成在所述栅极绝缘膜上的由碳化硅形成的第一电极; 形成在第一电极上的第二电极; 用于覆盖第一和第二电极的层间绝缘膜; 电连接到第二碳化硅区域和第三碳化硅区域的第三电极; 以及形成在碳化硅衬底的第二主表面上的第四电极。

公开(公告)号：US20130137253A1

公开(公告)日：2013-05-30

申请号：US13705610

申请日：2012-12-05

申请人： Hiroshi KONO ,  Takashi Shinohe

发明人： Hiroshi KONO ,  Takashi Shinohe

IPC分类号： H01L21/04

CPC分类号： H01L21/04 ,  H01L29/0619 ,  H01L29/0834 ,  H01L29/0839 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7802

摘要： A semiconductor device includes: a silicon carbide substrate having first and second main surfaces; a first silicon carbide layer provided on the first main surface of the silicon carbide substrate; first silicon carbide regions formed on a surface of the first silicon carbide layer; second and third silicon carbide regions formed on respective surfaces of the first silicon carbide regions; a fourth silicon carbide region formed between facing first silicon carbide regions with the first silicon carbide layer therebetween; a gate insulating film formed continuously on surfaces of the first silicon carbide regions, the first silicon carbide layer, and the fourth silicon carbide region; a gate electrode formed on the gate insulating film; an interlayer insulating film covering the gate electrode; a first electrode electrically connected to the second and third silicon carbide regions; and a second electrode formed on the second main surface of the silicon carbide substrate.

摘要翻译： 半导体器件包括：具有第一和第二主表面的碳化硅衬底; 设置在所述碳化硅衬底的所述第一主表面上的第一碳化硅层; 第一碳化硅区域形成在第一碳化硅层的表面上; 形成在第一碳化硅区域的相应表面上的第二和第三碳化硅区域; 形成在面对的第一碳化硅区域之间的第四碳化硅区域，其间具有第一碳化硅层; 在第一碳化硅区域，第一碳化硅层和第四碳化硅区域的表面上连续形成的栅极绝缘膜; 形成在栅极绝缘膜上的栅电极; 覆盖栅电极的层间绝缘膜; 电连接到第二和第三碳化硅区域的第一电极; 以及形成在碳化硅衬底的第二主表面上的第二电极。

公开(公告)号：US08027775B2

公开(公告)日：2011-09-27

申请号：US12097130

申请日：2006-12-21

申请人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

发明人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

IPC分类号： B60W30/02 ,  B60T8/172

CPC分类号： B60T8/17552 ,  B60T2230/02 ,  B60W10/04 ,  B60W10/10 ,  B60W10/18 ,  B60W40/10 ,  B60W40/101 ,  B60W2050/0033 ,  B60W2050/0034 ,  B60W2520/20 ,  B60W2530/20 ,  B62D6/003

摘要： A basic required manipulated variable Mfbdmd_a is determined on the basis of a state amount error, which is the difference between a state amount of a motion of an actual vehicle 1 and a reference state amount, then a driving/braking force manipulation control input Fxfbdmd_n of a wheel is determined on the basis of the above basic required manipulated variable. At this time, a change in a driving/braking force operation control input Fxdmd_n of a front wheel and a rear wheel, respectively, of a particular set is made to be proportional to a change in the basic required manipulated variable Mfbdmd_a, and the ratio (gain) of a change in Fxdmd_n with respect to a change in Mfbdmd_a is made to change on the basis of gain adjustment parameters, such as side slip angles βf_act and βr_act. This makes it possible to properly control a motion of the actual vehicle to a desired motion by properly manipulating a road surface reaction force acting on a front wheel of the vehicle and a road surface reaction force acting on a rear wheel.

摘要翻译： 基于作为实际车辆1的运动的状态量与基准状态量之间的差的状态量误差确定基本所需的操作变量Mfbdmd_a，然后基于状态量误差来确定驱动/制动力操作控制输入Fxfbdmd_n 基于上述基本需要的操纵变量确定车轮。 此时，分别将特定组的前轮和后轮的驱动/制动力操作控制输入Fxdmd_n的变化与基本要求操作量Mfbdmd_a的变化成比例，并且比率 根据增益调整参数（例如侧滑角＆bgr; f_act和＆bgr; r_act），使Fxdmd_n相对于Mfbdmd_a的变化的变化的增益（增益）变化。 通过适当地操作作用在车辆的前轮上的路面反作用力和作用在后轮上的路面反作用力，能够将实际车辆的运动适当地控制为期望的运动。

公开(公告)号：US07947988B2

公开(公告)日：2011-05-24

申请号：US12199848

申请日：2008-08-28

申请人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Johji Nishio

发明人： Hiroshi Kono ,  Takashi Shinohe ,  Chiharu Ota ,  Johji Nishio

IPC分类号： H01L29/15

CPC分类号： H01L29/7802 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/0886 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/66068 ,  H01L29/7395

摘要： A semiconductor device includes an SiC substrate, a first SiC layer of first conductivity provided on the substrate, a second SiC layer of second conductivity provided on the first SiC layer, first and second SiC regions provided in the second SiC layer, facing each other and having the same depth, a third SiC region extending through the first SiC region and reaching the first SiC layer, a gate insulator formed on the first and second SiC regions and the second SiC layer interposed therebetween, a gate electrode formed on the gate insulator, a first contact of first conductivity formed on the second SiC region, a second contact of second conductivity formed on the second SiC region, reaching the second SiC layer through the second SiC region, and a top electrode formed on the first and second contacts, and a bottom electrode formed on a back surface of the substrate.

摘要翻译： 半导体器件包括SiC衬底，设置在衬底上的第一导电性第一SiC层，设置在第一SiC层上的第二导电性第二SiC层，设置在第二SiC层中的第一和第二SiC区域彼此面对， 具有相同深度的第三SiC区域延伸穿过第一SiC区域并到达第一SiC层，形成在第一和第二SiC区域上的第二SiC层和形成在栅极绝缘体上的第二SiC层的栅绝缘体， 形成在第二SiC区域上的第一导电体的第一接触，形成在第二SiC区域上的第二导电体的第二接触通过第二SiC区域到达第二SiC层，以及形成在第一和第二接触体上的顶部电极，以及 形成在基板的背面上的底部电极。

公开(公告)号：US20100308343A1

公开(公告)日：2010-12-09

申请号：US12846400

申请日：2010-07-29

申请人： Takuma Suzuki ,  Hiroshi Kono ,  Takashi Shinohe

发明人： Takuma Suzuki ,  Hiroshi Kono ,  Takashi Shinohe

IPC分类号： H01L29/78 ,  H01L29/24

CPC分类号： H01L29/7802 ,  H01L21/0465 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/1095 ,  H01L29/1608 ,  H01L29/41766 ,  H01L29/42368 ,  H01L29/45 ,  H01L29/66068 ,  H01L29/7395 ,  H01L29/7816

摘要： According to the embodiment, a semiconductor device includes an SiC substrate of a first or second conductivity type. An SiC layer of the first conductivity type is formed on a front surface of the substrate, a first SiC region of the second conductivity type is formed on the SiC layer, a second SiC region of the first conductivity type is formed within a surface of the first SiC region, a gate dielectric is continuously formed on the SiC layer, the second SiC region, and the surface of the first SiC region interposed between the SiC layer and the second SiC region, a gate electrode is formed on the gate dielectric, a first electrode is embedded in a trench selectively formed in a part where the first SiC region adjoins the second SiC region, and a second electrode is formed on a back surface of the substrate.

摘要翻译： 根据实施例，半导体器件包括第一或第二导电类型的SiC衬底。 第一导电类型的SiC层形成在基板的前表面上，第二导电类型的第一SiC区域形成在SiC层上，第一导电类型的第二SiC区域形成在 第一SiC区域，在SiC层，第二SiC区域和介于SiC层和第二SiC区域之间的第一SiC区域的表面上连续地形成栅极电介质，在栅极电介质上形成栅电极， 第一电极嵌入在第一SiC区域与第二SiC区域相邻的部分中选择性地形成的沟槽中，并且在衬底的背面上形成第二电极。

公开(公告)号：US20090187302A1

公开(公告)日：2009-07-23

申请号：US12094345

申请日：2006-12-21

申请人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

发明人： Toru Takenaka ,  Takayuki Toyoshima ,  Hiroyuki Urabe ,  Hiroshi Kono

IPC分类号： B60W50/06

CPC分类号： B62D6/04 ,  B60T8/1755 ,  B60T2230/02 ,  B60T2270/86 ,  B60W2050/0033 ,  B62D6/003 ,  Y10S903/93

摘要： A control input for operating an actual vehicle actuator and a control input for operating a vehicle model are determined by an FB distribution law 20 on the basis of a difference between a reference state amount determined by a vehicle model 16 and an actual state amount of an actual vehicle 1 (state amount error) such that the state amount error is approximated to zero, and then an actuator device 3 of the actual vehicle 1 and the model vehicle 16, respectively, are operated on the basis of the control inputs. The FB distribution law 20 estimates an external force acting on the actual vehicle 1 due to a control input for operating an actual vehicle actuator, and determines a control input for operating the vehicle model on the basis of the estimated value and a basic value of a control input for operating the vehicle model for approximating the state amount error to zero. Thus, a vehicle control device capable of enhancing robustness against disturbance factors or their changes while performing operation control of actuators that is suited to behaviors of an actual vehicle as much as possible is provided.

摘要翻译： 用于操作实际车辆致动器的控制输入和用于操作车辆模型的控制输入由FB分布定律20基于由车辆模型16确定的参考状态量与实际状态量之间的差确定 实际车辆1（状态量误差）使得状态量误差近似为零，然后分别基于控制输入来操作实际车辆1和模型车辆16的致动器装置3。 FB分配规律20由于用于操作实际车辆致动器的控制输入而估计作用在实际车辆1上的外力，并且基于估计值和基准值确定用于操作车辆模型的控制输入 用于操作车辆模型的控制输入以将状态量误差近似为零。 因此，提供一种能够在对尽可能多地适用于实际车辆的行为的执行机构进行操作控制的同时，能够增强抗干扰因素或其变化的鲁棒性的车辆控制装置。

公开(公告)号：US20090024293A1

公开(公告)日：2009-01-22

申请号：US12278455

申请日：2007-05-24

申请人： Toru Takenaka ,  Hiroshi Kono ,  Takayuki Toyoshima ,  Hiroyuki Urabe

发明人： Toru Takenaka ,  Hiroshi Kono ,  Takayuki Toyoshima ,  Hiroyuki Urabe

IPC分类号： B60T8/58

CPC分类号： B62D6/002 ,  B60T8/17552 ,  B60T2230/02 ,  B60T2260/02 ,  B60T2270/86 ,  B60W10/04 ,  B60W10/12 ,  B60W10/18 ,  B60W50/06 ,  B60W2050/0028 ,  B60W2050/0033 ,  B62D6/003

摘要： An actual vehicle actuator operation control input and a model operation control input are determined by an FB distribution law such that the difference between a reference state amount determined in a vehicle model and an actual state amount of an actual vehicle approximates zero, and then an actuator device of the actual vehicle and the vehicle model are operated on the basis of the control inputs. The value of a parameter of the vehicle model is set according to an actual vehicle motional state such that the attenuation property of a reference state amount when a drive manipulated variable is changed is higher than the attenuation property of an actual state amount. Accordingly, the actual vehicle actuator device is properly controlled independently of an actual vehicle motional state such that a state amount related to an actual vehicle motion approximates a vehicle state amount on a dynamic characteristic model.

摘要翻译： 实际的车辆致动器操作控制输入和模型操作控制输入由FB分布定律确定，使得在车辆模型中确定的参考状态量与实际车辆的实际状态量之间的差接近于零，然后致动器 实际车辆的装置和车辆模型基于控制输入进行操作。 根据实际车辆运动状态来设定车辆模型的参数值，使得当驾驶操作变量改变时参考状态量的衰减特性高于实际状态量的衰减特性。 因此，实际的车辆执行器装置被独立于实际车辆运动状态适当地控制，使得与实际车辆运动相关的状态量近似于动态特性模型上的车辆状态量。

公开(公告)号：US20050165430A1

公开(公告)日：2005-07-28

申请号：US11038427

申请日：2005-01-21

申请人： Hiroshi Kono

发明人： Hiroshi Kono

IPC分类号： A61B17/00 ,  A61B17/22 ,  A61B17/32 ,  A61D1/02

CPC分类号： A61B17/320758 ,  A61B17/00234 ,  A61B17/22 ,  A61B17/32 ,  A61B17/32002 ,  A61B2017/00292 ,  A61B2017/320741

摘要： Provided is an atherectomy catheter, including a cylindrical catheter body, a freely rotatable drive wire inserted into an inside of the catheter body, and a head for removing a thrombus, which is provided on a tip of the catheter body, in which the head has an elastic member formed of a material that is deformable by collision with the thrombus, and an outer surface of the elastic member is placed on substantially the same level as a surface of a blade for removing the thrombus, or protrudes outwardly from the surface of the blade. The outer surface of the elastic member is dented backward from the surface of the blade of a blade member, or concaved by collision with the thrombus, the blade then abuts on the thrombus present in the concave formed, and the thrombus is eliminated.

摘要翻译： 本发明提供了一种粥样斑块切除术导管，包括圆柱形导管主体，插入导管主体内部的可自由旋转的驱动线，以及设置在导管主体的尖端上的用于去除血栓的头部， 由与血栓碰撞可变形的材料形成的弹性部件，弹性部件的外表面与刮板的表面大致相同的高度被设置，用于除去血栓，或者从 刀。 弹性构件的外表面从叶片构件的叶片的表面向后凹陷，或者通过与血栓的碰撞而凹陷，叶片接触形成的凹部中存在的血栓，并且消除血栓。