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公开(公告)号：US09287682B2
公开(公告)日：2016-03-15
申请号：US14069541
申请日：2013-11-01
申请人： Hiroshi Motomura , Shunichi Sato
发明人： Hiroshi Motomura , Shunichi Sato
CPC分类号： H01S5/18355 , G04F5/14 , G04F5/145 , H01S5/18347 , H01S5/1835 , H01S5/18377 , H01S5/18394 , H01S5/4087 , H01S5/423
摘要： Disclosed is a surface emitting laser device, including a substrate; a lower reflecting mirror provided on the substrate; an active layer provided on the lower reflecting mirror; an upper reflecting mirror provided on the active layer, including an emitting region, laser light being emitted from the emitting region, the upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other; and an adjusting layer formed of semiconductor, provided in the emitting region between the active layer and the upper reflecting mirror, a shape of the adjusting layer in a plane parallel to a surface of the substrate including shape anisotropy in two mutually perpendicular directions.
摘要翻译： 公开了一种包括基板的表面发射激光器件; 设置在基板上的下反射镜; 设置在下反射镜上的有源层; 设置在有源层上的上反射镜，包括发射区域，从发射区域发射的激光，上反射镜通过交替层叠电介质而形成，所述电介质折射率彼此不同; 以及设置在有源层和上反射镜之间的发射区域中的由半导体形成的调整层，在与基板的表面平行的平面中包括两个相互垂直的方向上的形状各向异性的调整层的形状。
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2.发明授权Surface emitting laser device, surface emitting laser array, optical scanning device, and image forming apparatus 有权表面发射激光器件，表面发射激光器阵列，光学扫描装置和成像装置公开(公告)号：US08711891B2
公开(公告)日：2014-04-29
申请号：US12917080
申请日：2010-11-01
申请人： Hiroshi Motomura , Shunichi Sato
发明人： Hiroshi Motomura , Shunichi Sato
CPC分类号： H01S5/18313 , B41J2/473 , B82Y20/00 , H01S5/0425 , H01S5/18338 , H01S5/18347 , H01S5/1835 , H01S5/18352 , H01S5/18355 , H01S5/18377 , H01S5/18391 , H01S5/18394 , H01S5/3434 , H01S5/423 , H01S2302/00
摘要： A disclosed surface emitting laser device includes an oscillator structure including an active layer, semiconductor multilayer reflection mirrors sandwiching the oscillator structure, an electrode provided on an emitting surface where light is emitted in a manner such that the electrode surrounds an emitting region, and a dielectric film formed in at least one region outside a center part of the emitting region so that a refractive index of the region outside the center part of the emitting region is less than the refractive index of the center part of the emitting region. When viewed from an emitting direction of the light, a part of the electrode overlaps a part of the dielectric film.
摘要翻译： 公开的表面发射激光器件包括：振荡器结构，其包括有源层，夹着振荡器结构的半导体多层反射镜，设置在发光面上的电极，以使电极围绕发射区域的方式发射光;电介质 在发光区域的中心部分外的至少一个区域中形成的膜，使得发光区域的中心部分外的区域的折射率小于发光区域的中心部分的折射率。 当从光的发射方向观察时，电极的一部分与电介质膜的一部分重叠。
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3.发明申请VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS, IMAGE FORMING APPARATUS, OPTICAL TRANSMISSION MODULE AND OPTICAL TRANSMISSION SYSTEM 有权垂直孔表面发射激光装置，垂直孔表面发射激光阵列，光学扫描装置，图像形成装置，光传输模块和光传输系统公开(公告)号：US20110037825A1
公开(公告)日：2011-02-17
申请号：US12989538
申请日：2009-04-28
CPC分类号： H01S5/18361 , B41J2/442 , B41J2/473 , H01L33/10 , H01L33/105 , H01S5/0655 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/18347 , H01S5/1835 , H01S5/18358 , H01S5/18394 , H01S5/187 , H01S5/3202 , H01S5/423 , H01S2301/166 , H01S2301/176
摘要： A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.
摘要翻译： 所公开的垂直腔表面发射激光器装置相对于衬底正交地发光，并且包括包括有源层的谐振器结构; 以及半导体多层反射器，以将谐振器结构夹在它们之间并且包括同时限制注入的电流和横向振荡模式的约束结构的方式设置。 限制结构具有围绕电流通道区域的氧化区域。 通过氧化包括铝的部分选择性氧化层并至少包含一种氧化物而形成氧化区。 选择性氧化层的厚度至少为25nm。 半导体多层反射器包括减少横向光学限制的光限制减少部分。 光限制减少部分相对于谐振器结构设置在衬底侧。
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4.发明申请VERTICAL CAVITY SURFACE EMITTING LASER DEVICE, VERTICAL CAVITY SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS, IMAGE FORMING APPARATUS, OPTICAL TRANSMISSION MODULE AND OPTICAL TRANSMISSION SYSTEM 审中-公开垂直孔表面发射激光装置，垂直孔表面发射激光阵列，光学扫描装置，图像形成装置，光传输模块和光传输系统公开(公告)号：US20150063396A1
公开(公告)日：2015-03-05
申请号：US14512592
申请日：2014-10-13
IPC分类号： H01S5/183
CPC分类号： H01S5/18361 , B41J2/442 , B41J2/473 , H01L33/10 , H01L33/105 , H01S5/0655 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/18347 , H01S5/1835 , H01S5/18358 , H01S5/18394 , H01S5/187 , H01S5/3202 , H01S5/423 , H01S2301/166 , H01S2301/176
摘要： A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.
摘要翻译： 所公开的垂直腔表面发射激光器装置相对于衬底正交地发光，并且包括包括有源层的谐振器结构; 以及半导体多层反射器，以将谐振器结构夹在它们之间并且包括同时限制注入的电流和横向振荡模式的约束结构的方式设置。 限制结构具有围绕电流通道区域的氧化区域。 通过氧化包括铝的部分选择性氧化层并至少包含一种氧化物而形成氧化区。 选择性氧化层的厚度至少为25nm。 半导体多层反射器包括减少横向光学限制的光限制减少部分。 光限制减少部分相对于谐振器结构设置在衬底侧。
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公开(公告)号：US20140152393A1
公开(公告)日：2014-06-05
申请号：US14069541
申请日：2013-11-01
申请人： Hiroshi Motomura , Shunichi SATO
发明人： Hiroshi Motomura , Shunichi SATO
CPC分类号： H01S5/18355 , G04F5/14 , G04F5/145 , H01S5/18347 , H01S5/1835 , H01S5/18377 , H01S5/18394 , H01S5/4087 , H01S5/423
摘要： Disclosed is a surface emitting laser device, including a substrate; a lower reflecting mirror provided on the substrate; an active layer provided on the lower reflecting mirror; an upper reflecting mirror provided on the active layer, including an emitting region, laser light being emitted from the emitting region, the upper reflecting mirror being formed by alternately laminating dielectrics, refracting indices of the dielectrics being different from each other; and an adjusting layer formed of semiconductor, provided in the emitting region between the active layer and the upper reflecting mirror, a shape of the adjusting layer in a plane parallel to a surface of the substrate including shape anisotropy in two mutually perpendicular directions.
摘要翻译： 公开了一种包括基板的表面发射激光器件; 设置在基板上的下反射镜; 设置在下反射镜上的有源层; 设置在有源层上的上反射镜，包括发射区域，从发射区域发射的激光，上反射镜通过交替层叠电介质而形成，所述电介质折射率彼此不同; 以及设置在有源层和上反射镜之间的发射区域中的由半导体形成的调整层，在与基板的表面平行的平面中包括两个相互垂直的方向上的形状各向异性的调整层的形状。
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6.发明申请Surface emitting laser element, surface emitting laser array, optical scanning apparatus, image forming apparatus, and optical communication system 有权表面发射激光元件，表面发射激光器阵列，光学扫描装置，成像装置和光通信系统公开(公告)号：US20080056321A1
公开(公告)日：2008-03-06
申请号：US11895832
申请日：2007-08-27
申请人： Hiroshi Motomura , Naoto Jikutani , Shunichi Sato
发明人： Hiroshi Motomura , Naoto Jikutani , Shunichi Sato
CPC分类号： B41J2/473 , B41J2/45 , G02B6/4249 , H01S5/0207 , H01S5/02461 , H01S5/18305 , H01S5/18308 , H01S5/18311 , H01S5/1833 , H01S5/18358 , H01S5/423
摘要： A vertical cavity surface emitting laser element is disclosed that includes a substrate, a first semiconductor multilayer reflector including plural pairs of layers having differing refractive indexes and thermal resistances, a resonator region including an active layer, and a second semiconductor multilayer reflector including plural pairs of layers having differing refractive indexes and thermal resistances. At least one pair of layers of the first semiconductor multilayer reflector and/or the second semiconductor multilayer reflector includes a first layer with a lower thermal resistance that has an optical thickness greater than ¼ of the oscillation wavelength and a second layer with a higher thermal resistance that has an optical thickness less than ¼ of the oscillation wavelength. The sum of the optical thickness of the first layer and the optical thickness of the second layer is equal to m/4 times the oscillation wavelength (m: even number≧2).
摘要翻译： 公开了一种垂直腔表面发射激光器元件，其包括衬底，包括具有不同折射率和热阻的多对层的第一半导体多层反射器，包括有源层的谐振器区域和包括多个对的第二半导体多层反射器 具有不同折射率和热阻的层。 第一半导体多层反射器和/或第二半导体多层反射器的至少一对层包括具有大于振荡波长的1/4的光学厚度的具有较低热阻的第一层和具有较高热阻的第二层 其光学厚度小于振荡波长的1/4。 第一层的光学厚度和第二层的光学厚度之和等于振荡波长的m / 4倍（m：偶数> = 2）。
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公开(公告)号：US07180069B2
公开(公告)日：2007-02-20
申请号：US10490818
申请日：2002-09-26
申请人： Hiroshi Motomura , Kazuhiro Saito
发明人： Hiroshi Motomura , Kazuhiro Saito
IPC分类号： G01T1/20
CPC分类号： G01T1/161 , A61B6/4258
摘要： The present invention provides a radiation detector capable of detecting the radioactive substance accumulated in the tissue inside a body by inserting a detection unit into blood vessels. In the radiation detector of the present invention, comprising a detection unit (2) having a bar-type scintillator (4) which emits light by an incidence of radiation so as to transmit the light from the scintillator through an optical fiber, the detection unit is formed in a size capable of being inserted into the tubules while fine convexoconcaves are provided on the peripheral surface of the scintillator.
摘要翻译： 本发明提供一种辐射检测器，其能够通过将检测单元插入血管中来检测积聚在体内的组织内的放射性物质。 在本发明的辐射检测器中，包括具有棒状闪烁体（4）的检测单元（2），其通过辐射入射发射光，以便通过光纤传输来自闪烁体的光，所述检测单元 形成为能够插入到小管中的尺寸，同时在闪烁体的外周表面上提供微细的凹凸。
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8.发明授权Vertical cavity surface emitting laser device, vertical cavity surface emitting laser array, optical scanning apparatus, image forming apparatus, optical transmission module and optical transmission system 有权垂直腔表面发射激光器件，垂直腔表面发射激光器阵列，光学扫描装置，成像装置，光传输模块和光传输系统公开(公告)号：US09570887B2
公开(公告)日：2017-02-14
申请号：US14512592
申请日：2014-10-13
CPC分类号： H01S5/18361 , B41J2/442 , B41J2/473 , H01L33/10 , H01L33/105 , H01S5/0655 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/18347 , H01S5/1835 , H01S5/18358 , H01S5/18394 , H01S5/187 , H01S5/3202 , H01S5/423 , H01S2301/166 , H01S2301/176
摘要： A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.
摘要翻译： 所公开的垂直腔表面发射激光器装置相对于衬底正交地发光，并且包括包括有源层的谐振器结构; 以及半导体多层反射器，以将谐振器结构夹在它们之间并且包括同时限制注入的电流和横向振荡模式的约束结构的方式设置。 限制结构具有围绕电流通道区域的氧化区域。 通过氧化包括铝的部分选择性氧化层并至少包含一种氧化物而形成氧化区。 选择性氧化层的厚度至少为25nm。 半导体多层反射器包括减少横向光学限制的光限制减少部分。 光限制减少部分相对于谐振器结构设置在衬底侧。
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9.发明授权Vertical cavity surface emitting laser device, vertical cavity surface emitting laser array, optical scanning apparatus, image forming apparatus, optical transmission module and optical transmission system 有权垂直腔表面发射激光器件，垂直腔表面发射激光器阵列，光学扫描装置，成像装置，光传输模块和光传输系统公开(公告)号：US08891571B2
公开(公告)日：2014-11-18
申请号：US12989538
申请日：2009-04-28
IPC分类号： H01S5/00 , B41J2/385 , B41J2/45 , B41J2/47 , B41J2/44 , H01S5/183 , H01S5/42 , H01S5/065 , H01S5/32
CPC分类号： H01S5/18361 , B41J2/442 , B41J2/473 , H01L33/10 , H01L33/105 , H01S5/0655 , H01S5/18308 , H01S5/18311 , H01S5/18313 , H01S5/18347 , H01S5/1835 , H01S5/18358 , H01S5/18394 , H01S5/187 , H01S5/3202 , H01S5/423 , H01S2301/166 , H01S2301/176
摘要： A disclosed vertical cavity surface emitting laser device emits light orthogonally in relation to a substrate and includes a resonator structure including an active layer; and semiconductor multilayer reflectors disposed in such a manner as to sandwich the resonator structure between them and including a confinement structure which confines an injected current and transverse modes of oscillation light at the same time. The confinement structure has an oxidized region which surrounds a current passage region. The oxidized region is formed by oxidizing a part of a selective oxidation layer which includes aluminum and includes at least an oxide. The selective oxidation layer is at least 25 nm in thickness. The semiconductor multilayer reflectors include an optical confinement reducing section which reduces optical confinement in a transverse direction. The optical confinement reducing section is disposed on the substrate side in relation to the resonator structure.
摘要翻译： 所公开的垂直腔表面发射激光器装置相对于衬底正交地发光，并且包括包括有源层的谐振器结构; 以及半导体多层反射器，以将谐振器结构夹在它们之间并且包括同时限制注入的电流和横向振荡模式的约束结构的方式设置。 限制结构具有围绕电流通道区域的氧化区域。 通过氧化包括铝的部分选择性氧化层并至少包含一种氧化物而形成氧化区。 选择性氧化层的厚度至少为25nm。 半导体多层反射器包括减少横向光学限制的光限制减少部分。 光限制减少部分相对于谐振器结构设置在衬底侧。
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10.发明申请SURFACE EMITTING LASER DEVICE, SURFACE EMITTING LASER ARRAY, OPTICAL SCANNING DEVICE, AND IMAGE FORMING APPARATUS 有权表面发射激光器件，表面发射激光阵列，光学扫描器件和图像形成装置公开(公告)号：US20110116147A1
公开(公告)日：2011-05-19
申请号：US12917080
申请日：2010-11-01
申请人： Hiroshi MOTOMURA , Shunichi Sato
发明人： Hiroshi MOTOMURA , Shunichi Sato
CPC分类号： H01S5/18313 , B41J2/473 , B82Y20/00 , H01S5/0425 , H01S5/18338 , H01S5/18347 , H01S5/1835 , H01S5/18352 , H01S5/18355 , H01S5/18377 , H01S5/18391 , H01S5/18394 , H01S5/3434 , H01S5/423 , H01S2302/00
摘要： A disclosed surface emitting laser device includes an oscillator structure including an active layer, semiconductor multilayer reflection mirrors sandwiching the oscillator structure, an electrode provided on an emitting surface where light is emitted in a manner such that the electrode surrounds an emitting region, and a dielectric film formed in at least one region outside a center part of the emitting region so that a refractive index of the region outside the center part of the emitting region is less than the refractive index of the center part of the emitting region. When viewed from an emitting direction of the light, a part of the electrode overlaps a part of the dielectric film.
摘要翻译： 公开的表面发射激光器件包括：振荡器结构，其包括有源层，夹着振荡器结构的半导体多层反射镜，设置在发光面上的电极，以使电极围绕发射区域的方式发射光;电介质 在发光区域的中心部分外的至少一个区域中形成的膜，使得发光区域的中心部分外的区域的折射率小于发光区域的中心部分的折射率。 当从光的发射方向观察时，电极的一部分与电介质膜的一部分重叠。
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