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14 条记录 (耗时 0.013 秒)

    Method for making FET having reduced oxidation inductive stacking fault
    3.
    发明授权
    Method for making FET having reduced oxidation inductive stacking fault 失效
    制造具有减少的氧化感应堆垛层错的FET的方法

    公开(公告)号：US5677208A

    公开(公告)日：1997-10-14

    申请号：US410373

    申请日：1995-03-24

    申请人： Hiroyasu Itou ,  Hideya Inagaki

    发明人： Hiroyasu Itou ,  Hideya Inagaki

    IPC分类号： H01L29/78 ,  H01L21/225 ,  H01L21/265 ,  H01L21/322 ,  H01L21/336 ,  H01L21/8234 ,  H01L23/544

    CPC分类号： H01L23/544 ,  H01L21/2253 ,  H01L21/3225 ,  H01L21/823462 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2223/5446 ,  H01L2924/0002

    摘要： An improved manufacturing method for a semiconductor device, which can reduce process inductive fault such as oxidation inductive stacking fault (OSF) and contribute to the improvement of the electric characteristics of the semiconductor device, is disclosed. A thermal oxide film is formed on a semiconductor substrate, then a nitride film is formed and a medium temperature heat treatment is provided to the semiconductor substrate within a temperature range from 600.degree. C. to 1,000.degree. C., whereby an interstitial oxygen concentration can be lowered. Subsequently, ion implantation, etc. are provided as a well region forming process, and a drive-in process is performed by means of a high temperature heat treatment. At this time, ion implantation dose is set to 9.times.10.sup.13 �cm.sup.-2 ! or less, and the temperature of the heat treatment is lowered or the duration of the teat treatment is shortened. After this, an element separation layer process is performed, and a gate oxide film, a gate electrode, a source/drain layer, a CVD oxide film, a contact hole and a metal wire are formed.

    摘要翻译： 公开了一种用于半导体器件的改进的制造方法，其可以减少诸如氧化感应堆垛层错（OSF）的处理感应故障并且有助于提高半导体器件的电特性。 在半导体衬底上形成热氧化膜，然后形成氮化物膜，并在600℃至1000℃的温度范围内向半导体衬底提供中温热处理，由此间隙氧浓度可以 被降低 随后，提供离子注入等作为阱区形成工艺，并且通过高温热处理进行驱入工艺。 此时，离子注入剂量设定为9×10 13 [cm -2]以下，热处理温度降低或乳头处理的持续时间缩短。 之后，进行元件分离层工艺，形成栅极氧化膜，栅电极，源/漏层，CVD氧化膜，接触孔和金属线。

    Method for producing a contact hole in a semiconductor device using reflow and etch
    4.
    发明授权
    Method for producing a contact hole in a semiconductor device using reflow and etch 失效
    使用回流和蚀刻在半导体器件中制造接触孔的方法

    公开(公告)号：US5552342A

    公开(公告)日：1996-09-03

    申请号：US293247

    申请日：1994-08-19

    申请人： Hiroyasu Itou ,  Tosiyuki Morisita ,  Takanori Simamoto

    发明人： Hiroyasu Itou ,  Tosiyuki Morisita ,  Takanori Simamoto

    IPC分类号： H01L21/28 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/768

    CPC分类号： H01L21/76802 ,  Y10S438/978

    摘要： An LOCOS film is formed on an Si substrate, a gate oxide film and a gate electrode are formed thereon, and source/drain impurities are ion implanted into the Si substrate using the gate electrode as a mask. Then, a BPSG film is formed at a film density of 1.8 g/cm.sup.3 or more. A recessed part is formed in the BPSG film by the first photolithographic process with an etching depth of 20% or more but under 100% of the thickness of the BPSG film. Thereafter, the BPSG film is fluidized by reflow treatment to shape a part which is to be a contact hole into a funnel with an "upwards convex" curvature. Finally, the part formed into the funnel is etched to make a contact hole. As a result, wiring disconnection within the contact hole can be prevented, the diffusion depth controllability for the source/drain impurities can be improved, and the fall in the impurity density in the source/drain surface can be prevented.

    摘要翻译： 在Si衬底上形成LOCOS膜，在其上形成栅极氧化膜和栅电极，并且使用栅电极作为掩模将源/漏杂质离子注入到Si衬底中。 然后，以1.8g / cm 3以上的膜密度形成BPSG膜。 通过第一光刻工艺在BPSG膜中形成凹陷部分，其蚀刻深度为BPSG膜的厚度的20％以上但低于100％。 此后，通过回流处理将BPSG膜流化，将作为接触孔的部分成形为具有“向上凸起”曲率的漏斗。 最后，将形成漏斗的部分蚀刻以形成接触孔。 结果，可以防止接触孔内的布线断开，可以提高源极/漏极杂质的扩散深度可控性，并且可以防止源极/漏极表面中的杂质浓度的下降。

    Semiconductor device and method for manufacturing it
    7.
    发明授权
    Semiconductor device and method for manufacturing it 有权
    半导体装置及其制造方法

    公开(公告)号：US06791156B2

    公开(公告)日：2004-09-14

    申请号：US10280071

    申请日：2002-10-25

    申请人： Hiroyasu Itou

    发明人： Hiroyasu Itou

    IPC分类号： H01L2900

    CPC分类号： H01L21/84 ,  H01L27/1203 ,  H01L29/94

    摘要： In a manufacturing process of an SOI structure semiconductor device in which an MOS capacitor is located on an SOI substrate, the capacitor insulating film of the MOS capacitor is prevented from degrading due to a bimetal effect, which is caused by a thermal treatment and characteristic to the SOI substrate. A trench is formed to surround the MOS capacitor in the SOI substrate, thick oxide films are formed on sidewalls defining the trench, and the trench is filled with polysilicon to complete a trench isolation layer. Because the thick oxide films have a coefficient of thermal expansion that is different from that of a silicon semiconductor layer of the SOI substrate, the thick oxide films are able to prevent the capacitor insulating film from degrading in film quality due to the thermal treatment in the manufacturing process. As a result, an SOI semiconductor device in which an MOS capacitor on an SOI substrate offers performance comparable to an MOS capacitor on a silicon substrate can be formed.

    摘要翻译： 在其中MOS电容器位于SOI衬底上的SOI结构半导体器件的制造工艺中，由于由热处理引起的双金属效应，MOS电容器的电容器绝缘膜被防止劣化， SOI衬底。 形成沟槽以围绕SOI衬底中的MOS电容器，在限定沟槽的侧壁上形成厚的氧化物膜，并且沟槽被多晶硅填充以完成沟槽隔离层。 由于厚氧化物膜具有与SOI衬底的硅半导体层的热膨胀系数不同的热膨胀系数，因此厚氧化物膜能够防止电容器绝缘膜由于热处理而导致膜质量降低 制造工艺。 结果，可以形成SOI衬底上的MOS电容器提供与硅衬底上的MOS电容器相当的性能的SOI半导体器件。

    Color image forming method and color image forming apparatus practicable therewith
    8.
    发明授权
    Color image forming method and color image forming apparatus practicable therewith 失效
    彩色图像形成方法和彩色图像形成装置

    公开(公告)号：US5765087A

    公开(公告)日：1998-06-09

    申请号：US778723

    申请日：1996-12-27

    申请人： Hidetoshi Yano ,  Yasushi Nakazato ,  Takayuki Kimura ,  Masako Yoshii ,  Hiroyasu Itou

    发明人： Hidetoshi Yano ,  Yasushi Nakazato ,  Takayuki Kimura ,  Masako Yoshii ,  Hiroyasu Itou

    IPC分类号： G03G21/00 ,  G03G15/01 ,  G03G21/10

    CPC分类号： G03G15/0105 ,  G03G21/10 ,  G03G2215/0174 ,  G03G2221/0005

    摘要： The color image forming method of the kind sequentially forming toner images of different colors on an image carrier with developers of corresponding colors stored in a plurality of developing devices, sequentially transferring the toner images to a single paper or similar recording medium one above the other, and returning the toner left on the image carrier after the image transfer to the developing devices color by color, and an image forming apparatus practicable therewith. After the transfer of a toner image of any particular color to the paper wrapped around a transfer drum, a cleaning roller assigned to the above color each collects the toner remaining on the drum and again deposits it on the drum. The drum conveys the redeposited toner to one of the developing devices storing a developer of the same color as the toner.

    摘要翻译： 在图像载体上顺序地形成不同颜色的调色剂图像的类型的彩色图像形成方法，其中存储在多个显影装置中的相应颜色的显影剂顺序地将调色剂图像转印到单个纸张或类似的记录介质上， 并且在通过颜色将图像转印到显影装置之后将残留在图像载体上的调色剂返回，以及可用于其的图像形成装置。 在将特定颜色的调色剂图像转印到缠绕在转印鼓上的纸张上之后，分配给上述颜色的清洁辊收集剩余在滚筒上的调色剂并再次将其沉积在滚筒上。 鼓将再沉积的调色剂传送到存储与调色剂相同颜色的显影剂的显影装置中的一个。

    Recycling system and recycling method
    10.
    发明授权
    Recycling system and recycling method 失效
    回收系统和回收利用方法

    公开(公告)号：US06529788B1

    公开(公告)日：2003-03-04

    申请号：US09460763

    申请日：1999-12-14

    申请人： Tatsuo Tani ,  Kiyoshi Sakai ,  Yasushi Akiba ,  Shohzoh Miyawaki ,  Teruzo Hasumi ,  Mitsuaki Urakawa ,  Tetsuo Yamaoka ,  Hisashi Ishijima ,  Hiroyasu Itou

    发明人： Tatsuo Tani ,  Kiyoshi Sakai ,  Yasushi Akiba ,  Shohzoh Miyawaki ,  Teruzo Hasumi ,  Mitsuaki Urakawa ,  Tetsuo Yamaoka ,  Hisashi Ishijima ,  Hiroyasu Itou

    IPC分类号： G06F1900

    CPC分类号： G06Q10/06 ,  B29B2017/0089 ,  G06Q10/0875 ,  Y02P90/86

    摘要： A recycling system has a recycle information memory database for storing as recycle information, the information on all reutilizable products such as products produced or used under the management of the system, products treated as wastes, and products currently being used in the market. A virtual recycle product designing section is provided for estimating times when the reutilizable products are recovered as products usable for recycling as well as their volumes, based on the recycle information stored in the recycle information memory database. A production scheduling section is provided for setting a production schedule of a recycle product using the reutilizable products based on the estimated times and volumes.

    摘要翻译： 回收系统具有用于存储为回收信息的回收信息存储数据库，关于系统管理下生产或使用的产品，废弃物处理产品以及目前市场上使用的产品的所有可再利用产品的信息。 提供虚拟回收产品设计部分，用于基于存储在再循环信息存储器数据库中的回收信息来估计可再利用产品被回收作为可回收利用的产品及其体积的时间。 提供生产调度部分，用于基于估计的时间和体积来设置使用可再生产品的再循环产品的生产计划。