公开(公告)号：US09245548B2

公开(公告)日：2016-01-26

申请号：US12011334

申请日：2008-01-25

Applicant: Masato Shiimoto ,  Hiroyuki Katada ,  Kazuhiro Nakamoto ,  Hiroyuki Hoshiya

Inventor： Masato Shiimoto ,  Hiroyuki Katada ,  Kazuhiro Nakamoto ,  Hiroyuki Hoshiya

IPC: G11B5/39 ,  B82Y10/00 ,  B82Y25/00

CPC classification number: G11B5/3906 ,  B82Y10/00 ,  B82Y25/00 ,  G11B2005/3996 ,  Y10T428/1121

Abstract: Embodiments of the present invention help to reduce mag-noise in a magnetoresistive head without deterioration in reproduced output and improve the signal/noise ratio (SNR) of the magnetoresistive head. According to one embodiment, the magnetoresistive head uses a synthetic ferri free layer and it is arranged such that the magnetic field which is applied to an end of a free layer with smaller film thickness and saturation magnetization in the track width direction by a coupling field is larger than the magnetic field which is applied to it by a bias layer.

Abstract translation: 本发明的实施例有助于减少磁阻磁头中的磁噪声，而不会使再现输出变差，并提高磁阻磁头的信噪比（SNR）。 根据一个实施例，磁阻头使用合成的无自由层，并且其布置成使得通过耦合场施加到具有较小膜厚度和磁道宽度方向上的饱和磁化强度的自由层的端部的磁场是 大于通过偏​​置层施加到其的磁场。

公开(公告)号：US08564282B2

公开(公告)日：2013-10-22

申请号：US12864997

申请日：2008-12-03

Applicant: Hiroyuki Hoshiya ,  Kenichi Meguroo ,  Kazuhiro Nakamoto ,  Yasunori Abe

Inventor： Hiroyuki Hoshiya ,  Kenichi Meguroo ,  Kazuhiro Nakamoto ,  Yasunori Abe

IPC: G01B7/30

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G01R33/098

Abstract: There is provided an angle sensor and angle detection device of high output and high accuracy with a wide operating temperature range. First through eighth sensor units 511, 522, 523, 514, 531, 542, 543 and 534 are produced from spin valve magnetoresistive films that use a self-pinned type ferromagnetic pinned layer comprising two layers of ferromagnetic films that are strongly and anti-ferromagnetically coupled. The respective sensor units are produced via the formation and patterning of thin-films magnetized at angles that differ by 90°, and the formation of insulation films. By using, for the ferromagnetic films, CoFe and FeCo films that have similar Curie temperatures to make the difference in magnetization amount be zero, high immunity to external magnetic fields, a broad adaptive temperature range, and high output are realized.

Abstract translation: 在宽工作温度范围内提供高输出和高精度的角度传感器和角度检测装置。 第一至第八传感器单元511,522,543,514,531,542,543和534由自旋阀磁阻膜制造，该自旋阀磁阻膜使用包括两层强磁性和反铁磁性的铁磁性薄膜的自固定型铁磁性钉扎层 耦合。 相应的传感器单元通过以不同于90°的角度磁化的薄膜的形成和图案化以及形成绝缘膜来制造。 通过对铁磁膜使用具有相似居里温度的CoFe和FeCo膜，使磁化强度的差异为零，实现了对外部磁场的高抗扰性，宽适应温度范围和高输出。

公开(公告)号：US08085499B2

公开(公告)日：2011-12-27

申请号：US12888621

申请日：2010-09-23

Applicant: Yoshiaki Kawato ,  Kazuhiro Nakamoto ,  Hiroyuki Hoshiya ,  Yasuyuki Okada ,  Masafumi Mochizuki

Inventor： Yoshiaki Kawato ,  Kazuhiro Nakamoto ,  Hiroyuki Hoshiya ,  Yasuyuki Okada ,  Masafumi Mochizuki

IPC: G11B5/147 ,  G11B5/127

CPC classification number: G11B5/3906 ,  G11B5/1278

Abstract: Thin film perpendicular magnetic head with a narrow main pole capable of a high recording density in excess of 100 gigabits per square inch and generating a high magnetic recording field, while also being modified to suppress remanent magnetic fields occurring immediately after writing operation. A return path is provided for supplying a magnetic flux to the main pole, and an conductive coil for excitation of the main pole and return path. The main pole has a pole width of 200 nanometers or less, and a magnetic multilayer made up of a high saturation flux density layer and low saturation flux density layer. The low saturation flux density layer and the high saturation flux density suppress remanent magnetization and prevent erasing after writing by utilizing a closed magnetic domain structure in the pole.

Abstract translation: 具有超过100吉比特/平方英寸的高记录密度的窄主极的薄膜垂直磁头，并产生高磁记录场，同时还进行修改以抑制在写入操作之后立即发生的剩余磁场。 提供用于向主极提供磁通量的返回路径和用于激励主极和返回路径的导电线圈。 主极的极宽为200nm以下，由高饱和磁通密度层和低饱和磁通密度层构成的磁性层叠体。 低饱和磁通密度层和高饱和磁通密度通过利用磁极中的闭合磁畴结构来抑制剩磁，并防止写入后的擦除。

公开(公告)号：US07876536B2

公开(公告)日：2011-01-25

申请号：US11784212

申请日：2007-04-04

Applicant: Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Yo Sato

Inventor： Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Yo Sato

IPC: G11B5/39

CPC classification number: G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B2005/3996 ,  Y10T428/1121

Abstract: Embodiments of the present invention provides sufficiently high exchange coupling with a magnetic layer and improve the yield and reliability of a magnetoresistive head. By using a tilted growth crystalline structured antiferromagnetic film manufactured by an oblique incident deposition method, a high exchange coupling field with a ferromagnetic film can be obtained. As a result, excellent reliability and high output can be obtained in a magnetoresistive head utilizing features in accordance with embodiments of the present invention.

Abstract translation: 本发明的实施例提供了与磁性层的充分高的交换耦合，并提高了磁阻磁头的成品率和可靠性。 通过使用通过倾斜入射沉积法制造的倾斜生长晶体结构的反铁磁膜，可以获得具有铁磁膜的高交换耦合场。 因此，利用根据本发明的实施例的特征，可以获得在磁阻头中的优异的可靠性和高输出。

公开(公告)号：US20110007417A1

公开(公告)日：2011-01-13

申请号：US12888621

申请日：2010-09-23

Applicant: Yoshiaki KAWATO ,  Kazuhiro NAKAMOTO ,  Hiroyuki HOSHIYA ,  Yasuyuki OKADA ,  Masafumi MOCHIZUKI

Inventor： Yoshiaki KAWATO ,  Kazuhiro NAKAMOTO ,  Hiroyuki HOSHIYA ,  Yasuyuki OKADA ,  Masafumi MOCHIZUKI

IPC: G11B21/02

CPC classification number: G11B5/3906 ,  G11B5/1278

Abstract: Thin film perpendicular magnetic head with a narrow main pole capable of a high recording density in excess of 100 gigabits per square inch and generating a high magnetic recording field, while also being modified to suppress remanent magnetic fields occurring immediately after writing operation. A return path is provided for supplying a magnetic flux to the main pole, and an conductive coil for excitation of the main pole and return path. The main pole has a pole width of 200 nanometers or less, and a magnetic multilayer made up of a high saturation flux density layer and low saturation flux density layer. The low saturation flux density layer and the high saturation flux density suppress remanent magnetization and prevent erasing after writing by utilizing a closed magnetic domain structure in the pole.

Abstract translation: 具有超过100吉比特/平方英寸的高记录密度的窄主极的薄膜垂直磁头，并产生高磁记录场，同时还进行修改以抑制在写入操作之后立即发生的剩余磁场。 提供用于向主极提供磁通量的返回路径和用于激励主极和返回路径的导电线圈。 主极的极宽为200nm以下，由高饱和磁通密度层和低饱和磁通密度层构成的磁性层叠体。 低饱和磁通密度层和高饱和磁通密度通过利用磁极中的闭合磁畴结构来抑制剩磁，并防止写入后的擦除。

公开(公告)号：US20100188771A1

公开(公告)日：2010-07-29

申请号：US12636649

申请日：2009-12-11

Applicant: Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

Inventor： Susumu Okamura ,  Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya ,  Kenichi Meguro ,  Keizo Kato

IPC: G11B21/02 ,  G11B5/39

CPC classification number: H01F10/3268 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  G11B2005/3996 ,  H01F10/1936 ,  H01L43/08 ,  Y10T428/1121

Abstract: A magnetoresistive magnetic head according to one embodiment uses a current-perpendicular-to-plane magnetoresistive element having a laminate of a free layer, an intermediate layer, and a pinned layer, the pinned layer being substantially fixed to a magnetic field to be detected, wherein either the pinned layer or the free layer includes a Heusler alloy layer represented by a composition of X-Y-Z, wherein X is between about 45 at. % and about 55 at. % and is Co or Fe, Y accounts for between about 20 at. % and about 30 at. % and is one or more elements selected from V, Cr, Mn, and Fe, and Z is between about 20 at. % and about 35 at. % and is one or more elements selected from Al, Si, Ga, Ge, Sn, and Sb, the other layer including a high saturation magnetization material layer having higher saturation magnetization than that of the Heusler alloy, and where the direction of the current flowing perpendicular to plane being a direction in which an electron flows from the Heusler alloy layer into the high saturation magnetization material layer. Additional embodiments are also presented.

Abstract translation: 根据一个实施例的磁阻磁头使用具有自由层，中间层和被钉扎层的叠层的电流 - 垂直于平面的磁阻元件，被钉扎层基本上固定在待检测的磁场上， 其中所述被钉扎层或所述自由层包括由XYZ的组合物表示的Heusler合金层，其中X在约45at之间。 ％和约55在。 ％，为Co或Fe，Y约为20盎司。 ％和约30在。 ％且为选自V，Cr，Mn和Fe中的一种或多种元素，Z为约20at。 ％和约35英寸 ％，并且是选自Al，Si，Ga，Ge，Sn和Sb中的一种或多种元素，另一层包括具有比Heusler合金高饱和磁化强度的高饱和磁化材料层，并且其中电流方向 垂直于平面流动的方向是电子从Heusler合金层流入高饱和磁化材料层的方向。 还提供了另外的实施例。

公开(公告)号：US07733614B2

公开(公告)日：2010-06-08

申请号：US11698251

申请日：2007-01-24

Applicant: Kenichi Meguro ,  Hiroyuki Katada ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

Inventor： Kenichi Meguro ,  Hiroyuki Katada ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

IPC: G11B5/127

CPC classification number: G11B5/399 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/3906 ,  H01L43/08 ,  H01L43/12

Abstract: Embodiments in accordance with the present invention provide a method of manufacturing a magneto-resistive head which can realize high sensitivity and good linear response characteristics with low noise even if a track width becomes narrower. A uniaxial anisotropy unaffected by annealing which is due to the orientation of the crystal grain growth direction, is induced in a magnetic layer. The free magnetic layer has the synthetic antiferromagnetic construction: first magnetic layer/interlayer antiferromagnetic coupling layer/second magnetic layer, the magnitude of the antiferromagnetic coupling is adjusted, and linear response characteristics are obtained even if a longitudinal biasing field applying mechanism is not provided.

Abstract translation: 根据本发明的实施例提供一种制造磁阻头的方法，即使轨道宽度变窄，其也可以实现具有低噪声的高灵敏度和良好的线性响应特性。 在磁性层中诱发不受退火影响的单轴各向异性，这是由于晶粒生长方向的取向引起的。 自由磁性层具有合成的反铁磁结构：第一磁性层/层间反铁磁耦合层/第二磁性层，调整反铁磁耦合的大小，并且即使没有提供纵向偏置场施加机构也可获得线性响应特性。

公开(公告)号：US20090034135A1

公开(公告)日：2009-02-05

申请号：US12218860

申请日：2008-07-17

Applicant: Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  Yo Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

Inventor： Hiroyuki Hoshiya ,  Kenichi Meguro ,  Katsumi Hoshino ,  Yo Sato ,  Hiroyuki Katada ,  Kazuhiro Nakamoto

IPC: G11B5/33

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3929 ,  G11B2005/3996

Abstract: Embodiments of the present invention help to provide a single element type differential magnetoresistive magnetic head capable of achieving high resolution and high manufacturing stability. According to one embodiment, a magnetoresistive layered film is formed by stacking an underlayer film, an antiferromagnetic film, a ferromagnetic pinned layer, a non-magnetic intermediate layer, a soft magnetic free layer, a long distance antiparallel coupling layered film, and a differential soft magnetic free layer. The long distance antiparallel coupling layered film exchange-couples the soft magnetic free layer and the differential soft magnetic free layer in an antiparallel state with a distance of about 3 nanometers through 20 nanometers. By manufacturing the single element type differential magnetoresistive magnetic head using the magnetoresistive layered film, it becomes possible to achieve the high resolution and the high manufacturing stability without spoiling the GMR effect.

Abstract translation: 本发明的实施例有助于提供能够实现高分辨率和高制造稳定性的单元型差分磁阻磁头。 根据一个实施例，通过堆叠下层膜，反铁磁性膜，铁磁性钉扎层，非磁性中间层，软磁性自由层，长距离反向平行耦合层叠膜和差动层叠膜形成磁阻层叠膜 软磁自由层。 长距离反平行耦合分层膜将软磁自由层和差分软磁自由层以约3纳米至20纳米的距离反平行状态进行交换耦合。 通过使用磁阻层叠膜制造单元型差分磁阻磁头，可以实现高分辨率和高制造稳定性而不破坏GMR效应。

公开(公告)号：US20080144231A1

公开(公告)日：2008-06-19

申请号：US11998623

申请日：2007-11-29

Applicant: Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

Inventor： Yo Sato ,  Katsumi Hoshino ,  Hiroyuki Hoshiya

IPC: G11B5/39

CPC classification number: G11B5/3983 ,  B82Y25/00 ,  G01R33/093 ,  G11B5/398 ,  Y10T29/49826

Abstract: Embodiments of the present invention provide a magnetic head incorporating a CPP-GMR device having a high output at a suitable resistance. According to one embodiment, in a Current Perpendicular to Plane-Giant Magneto Resistive (CPP-GMR) head comprising a pinned layer, a free layer, and a current screen layer for confining current therein, a planarization treatment is applied to the surface of the current screen layer, thereby allowing the current screen layer to have a fluctuation in film thickness thereof. As a result of the fluctuation being provided in the film thickness of the current screen layer, parts of the current screen layer, smaller in the film thickness, will be selectively turned into metal areas low in resistance, and as the metal areas low in resistance serve as current paths, effects of confining current can be adjusted by controlling the fluctuation in the film thickness.

Abstract translation: 本发明的实施例提供一种结合具有适当电阻的高输出的CPP-GMR器件的磁头。 根据一个实施例，在垂直于平面大磁阻（CPP-GMR）头的电流包括被钉扎层，自由层和用于限制其中的电流的当前屏幕层，平坦化处理被施加到 当前的屏幕层，从而允许当前的屏幕层具有其膜厚度的波动。 由于在当前的屏幕层的膜厚度上提供了波动的结果，当前屏幕层的薄膜厚度的部分将被选择性地变成金属区域的低电阻，并且由于金属区域的电阻低 作为电流路径，可以通过控制膜厚度的波动来调节限流电流的影响。

公开(公告)号：US20070253117A1

公开(公告)日：2007-11-01

申请号：US11788038

申请日：2007-04-17

Applicant: Hisako Takei ,  Nobuo Yoshida ,  Hiroyuki Hoshiya ,  Taku Shintani

Inventor： Hisako Takei ,  Nobuo Yoshida ,  Hiroyuki Hoshiya ,  Taku Shintani

IPC: G11B5/33 ,  G11B5/127

CPC classification number: G01R33/093 ,  B82Y25/00 ,  G11B5/3163 ,  G11B5/398 ,  Y10T29/49021

Abstract: Embodiments in accordance with the present invention provide a sensor to produce high output with a small track width. Particular embodiments include forming a magnetoresistive sensor of a read head to be substantially vertical in its upper portion and gently upwardly convexly curved in its lower portion.

Abstract translation: 根据本发明的实施例提供一种用于产生具有小轨道宽度的高输出的传感器。 具体实施例包括形成读头的磁阻传感器在其上部基本垂直并且在其下部中轻轻地向上凸起地弯曲。