公开(公告)号：US09306152B2

公开(公告)日：2016-04-05

申请号：US14322631

申请日：2014-07-02

申请人： Masayoshi Iwayama ,  Hiroyuki Kanaya

发明人： Masayoshi Iwayama ,  Hiroyuki Kanaya

IPC分类号： H01L29/82 ,  H01L43/02 ,  H01L43/12

CPC分类号： H01L43/02 ,  H01L43/08 ,  H01L43/12

摘要： According to one embodiment, a magnetic memory is disclosed. The magnetic memory includes an underlying structure having conductivity provided on the substrate and including a first layer with a polycrystalline structure and a second layer with an amorphous structure, and a magnetoresistive element provide on the underlying layer. The magnetoresistive element includes a first magnetic layer provided on the underlying layer, a non-magnetic layer provided on the first magnetic layer, and a second magnetic layer provided on the non-magnetic layer.

摘要翻译： 根据一个实施例，公开了一种磁存储器。 磁存储器包括具有提供在衬底上的导电性的底层结构，并且包括具有多晶结构的第一层和具有非晶结构的第二层，并且磁阻元件提供在下层上。 磁阻元件包括设置在下层上的第一磁性层，设置在第一磁性层上的非磁性层和设置在非磁性层上的第二磁性层。

公开(公告)号：US20120068283A1

公开(公告)日：2012-03-22

申请号：US13230746

申请日：2011-09-12

申请人： Keiji HOSOTANI ,  Hiroyuki Kanaya

发明人： Keiji HOSOTANI ,  Hiroyuki Kanaya

IPC分类号： H01L29/82 ,  H01L43/12

CPC分类号： H01L43/12 ,  H01L27/228 ,  H01L43/08

摘要： A semiconductor storage device according to the present embodiment includes a selection element formed on a surface of a semiconductor substrate. A lower electrode is connected to the selection element. A magnetic tunnel junction element is provided on the lower electrode. An upper electrode is provided on the magnetic tunnel junction element. A growth layer is provided on the upper electrode and is composed of a conductive material and has a larger area than the upper electrode when viewed from above the surface of the semiconductor substrate. A wiring line is provided on the growth layer.

摘要翻译： 根据本实施例的半导体存储装置包括形成在半导体衬底的表面上的选择元件。 下电极连接到选择元件。 在下电极上设置磁性隧道结元件。 上部电极设置在磁性隧道结元件上。 生长层设置在上电极上并由导电材料构成，并且当从半导体衬底的表面上方观察时具有比上电极大的面积。 在生长层上设置布线。

公开(公告)号：US08080841B2

公开(公告)日：2011-12-20

申请号：US12553763

申请日：2009-09-03

申请人： Hiroyuki Kanaya

发明人： Hiroyuki Kanaya

IPC分类号： H01L29/76

CPC分类号： H01L28/75 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device includes a semiconductor substrate, a plurality of transistors connected in series and including a transistor having first and second diffusion regions arranged in the semiconductor substrate. The device also includes an insulating film columnar body arranged above the semiconductor substrate, and having a side which is inclined to a top surface of the substrate by an inclination angle greater than 0 degrees and less than 90 degrees. The device includes a memory cell including a first electrode arranged on the side of the insulating film columnar body and connected to the first diffusion region via a first contact plug, a ferroelectric film arranged on the first electrode, and a second electrode arranged on the ferroelectric film, and connected to the second diffusion region via a second contact plug.

摘要翻译： 半导体器件包括半导体衬底，串联连接的多个晶体管，并且包括具有布置在半导体衬底中的第一和第二扩散区的晶体管。 该器件还包括布置在半导体衬底之上的绝缘膜柱状体，并且具有倾斜角度大于0度且小于90度的侧面，该侧面与衬底的顶表面倾斜。 该装置包括存储单元，该存储单元包括布置在绝缘膜柱状体一侧的第一电极，并经由第一接触插塞连接到第一扩散区，布置在第一电极上的铁电膜和布置在铁电体上的第二电极 并且经由第二接触插塞连接到第二扩散区域。

公开(公告)号：US20100052023A1

公开(公告)日：2010-03-04

申请号：US12553763

申请日：2009-09-03

申请人： Hiroyuki KANAYA

发明人： Hiroyuki KANAYA

IPC分类号： H01L27/108 ,  H01L21/02

CPC分类号： H01L28/75 ,  H01L27/11507 ,  H01L28/56 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor device includes a semiconductor substrate, a plurality of transistors connected in series and including a transistor having first and second diffusion regions arranged in the semiconductor substrate. The device also includes an insulating film columnar body arranged above the semiconductor substrate, and having a side which is inclined to a top surface of the substrate by an inclination angle greater than 0 degrees and less than 90 degrees. The device includes a memory cell including a first electrode arranged on the side of the insulating film columnar body and connected to the first diffusion region via a first contact plug, a ferroelectric film arranged on the first electrode, and a second electrode arranged on the ferroelectric film, and connected to the second diffusion region via a second contact plug.

摘要翻译： 半导体器件包括半导体衬底，串联连接的多个晶体管，并且包括具有布置在半导体衬底中的第一和第二扩散区的晶体管。 该器件还包括布置在半导体衬底之上的绝缘膜柱状体，并且具有倾斜角度大于0度且小于90度的侧面，该侧面与衬底的顶表面倾斜。 该装置包括存储单元，该存储单元包括布置在绝缘膜柱状体一侧的第一电极，并经由第一接触插塞连接到第一扩散区，布置在第一电极上的铁电膜和布置在铁电体上的第二电极 并且经由第二接触插塞连接到第二扩散区域。

公开(公告)号：US07504684B2

公开(公告)日：2009-03-17

申请号：US11291837

申请日：2005-12-02

申请人： Hiroyuki Kanaya

发明人： Hiroyuki Kanaya

IPC分类号： H01L27/108

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75

摘要： A semiconductor device comprising a capacitive element which is provided above the semiconductor substrate and which has a capacitive insulation film held between an upper electrode and a lower electrode, a conductor for upper electrode which is connected to the upper electrode, a side-wall adsorbent member which covers a side wall of the conductor for upper electrode and which is composed of a material that adsorbs at least hydrogen, a conductor for lower electrode which is connected to the lower electrode, and a first adsorbent member which is provided at least either between the conductor for upper electrode and the capacitive insulation film or between the conductor for lower electrode and the capacitive insulation film, and which is composed of a material that adsorbs at least hydrogen.

摘要翻译： 一种半导体器件，包括设置在半导体衬底之上并且具有保持在上电极和下电极之间的电容绝缘膜的电容元件，连接到上电极的上电极用导体，侧壁吸附剂构件 其覆盖用于上部电极的导体的侧壁，并且由至少吸附氢的材料构成，用于连接到下部电极的下部电极的导体，以及设置在第一吸附构件之间的至少一个 用于上电极和电容绝缘膜的导体，或用于下电极的导体和电容绝缘膜之间，并且由至少吸附氢的材料组成。

公开(公告)号：US07446362B2

公开(公告)日：2008-11-04

申请号：US11941791

申请日：2007-11-16

申请人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

发明人： Osamu Hidaka ,  Iwao Kunishima ,  Hiroyuki Kanaya

IPC分类号： H01L29/76 ,  H01L29/94

CPC分类号： H01L27/11502 ,  H01L21/76802 ,  H01L27/105 ,  H01L27/11507 ,  H01L27/11509 ,  H01L28/55

摘要： A semiconductor memory device includes a semiconductor substrate having a first region and a second region, a transistor placed in the first region of the semiconductor substrate, a first insulating film formed on the semiconductor substrate in the first and second regions and on the transistor, a first ferroelectric capacitor formed on the first insulating film in the first region and electrically connected to the transistor, a hydrogen barrier film formed above the first ferroelectric capacitor and above the first insulating film in the first and second regions, a first contact penetrating the hydrogen barrier film in the first region and electrically connected to the first ferroelectric capacitor, and a second contact which penetrates the hydrogen barrier film in the second region and which is in a floating state.

摘要翻译： 半导体存储器件包括具有第一区域和第二区域的半导体衬底，放置在半导体衬底的第一区域中的晶体管，在第一和第二区域中的晶体管上形成在半导体衬底上的第一绝缘膜， 形成在第一区域的第一绝缘膜上并与晶体管电连接的第一铁电电容器，形成在第一铁电电容器上方的第一和第二区域上的第一绝缘膜上方的氢阻挡膜， 并且电连接到第一铁电电容器，以及第二触点，其穿过第二区域中的氢阻挡膜并处于浮置状态。

公开(公告)号：US07400005B2

公开(公告)日：2008-07-15

申请号：US11142441

申请日：2005-06-02

申请人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

发明人： Yoshinori Kumura ,  Iwao Kunishima ,  Hiroyuki Kanaya ,  Tohru Ozaki ,  Kazuhiro Tomioka

IPC分类号： H01L29/92

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65

摘要： A semiconductor memory device, which prevents the penetration of hydrogen or moisture to a ferroelectric capacitor from its surrounding area including a contact plug portion, comprises a ferroelectric capacitor formed above a semiconductor substrate, a first hydrogen barrier film formed on an upper surface of the ferroelectric capacitor to work as a mask in the formation of the ferroelectric capacitor, a second hydrogen barrier film formed on the upper surface and a side face of the ferroelectric capacitor including on the first hydrogen barrier film, and a contact plug disposed through the first and second hydrogen barrier films, and connected to an upper electrode of the ferroelectric capacitor, a side face thereof being surrounded with the hydrogen barrier films.

摘要翻译： 一种半导体存储器件，其防止氢或水分从其包括接触插塞部分的周围区域渗入铁电电容器，包括形成在半导体衬底上的强电介质电容器，形成在铁电体的上表面上的第一氢阻挡膜 电容器在形成铁电电容器时用作掩模，在上表面上形成的第二氢阻挡膜和包括在第一氢阻挡膜上的强电介质电容器的侧面，以及通过第一和第二 氢阻挡膜，并连接到铁电电容器的上电极，其侧面被氢阻挡膜包围。

公开(公告)号：US20080121957A1

公开(公告)日：2008-05-29

申请号：US11943212

申请日：2007-11-20

申请人： Hiroyuki KANAYA

发明人： Hiroyuki KANAYA

IPC分类号： H01L27/105 ,  H01L21/8239

CPC分类号： H01L28/57 ,  H01L28/56 ,  H01L28/65 ,  H01L28/75

摘要： A non-volatile memory device including a ferroelectric capacitor is disclosed. A method of manufacturing a non-volatile memory device including a ferroelectric capacitor is also disclosed. A first electrode is formed on an insulating film provided on a semiconductor substrate. A first ferroelectric film is formed on the first electrode. The first ferroelectric film has a convexo-concave surface portion. A second ferroelectric film is formed on the first ferroelectric film so as to bury the convexo-concave surface portion. The second ferroelectric film has a surface flatter than that of the first ferroelectric film. A second electrode is formed on the second ferroelectric film. A protective film is formed at least on a portion of an upper surface of the second electrode. The protective film serves as a barrier against hydrogen.

摘要翻译： 公开了一种包括铁电电容器的非易失性存储器件。 还公开了一种制造包括铁电电容器的非易失性存储器件的方法。 第一电极形成在设置在半导体衬底上的绝缘膜上。 在第一电极上形成第一铁电体膜。 第一铁电体膜具有凹凸表面部分。 在第一铁电体膜上形成第二铁电体膜，以埋入凹凸表面部分。 第二铁电体膜具有比第一铁电体膜更平坦的表面。 第二电极形成在第二铁电体膜上。 至少在第二电极的上表面的一部分上形成保护膜。 保护膜用作阻止氢的屏障。

公开(公告)号：US20080067567A1

公开(公告)日：2008-03-20

申请号：US11854138

申请日：2007-09-12

申请人： Hiroyuki Kanaya ,  Iwao Kunishima

发明人： Hiroyuki Kanaya ,  Iwao Kunishima

IPC分类号： H01L27/105

CPC分类号： H01L27/11507 ,  H01L27/11502 ,  H01L28/55

摘要： According to an aspect of the present invention, there is provided a semiconductor device including: a substrate; an insulating film disposed on the substrate; a plug electrode disposed in the insulating film; and a capacitor unit including: a lower electrode that is disposed on the insulating film and that covers a top face of the plug electrode, a ferroelectric film disposed on the lower electrode, a first upper electrode disposed on the ferroelectric film, and a second upper electrode disposed on the ferroelectric film and separated from the first upper electrode; wherein the first upper electrode covers a center of the plug electrode as viewed in a direction perpendicular to a surface of the semiconductor substrate.

摘要翻译： 根据本发明的一个方面，提供了一种半导体器件，包括：衬底; 设置在基板上的绝缘膜; 设置在所述绝缘膜中的插头电极; 以及电容器单元，包括：下电极，设置在所述绝缘膜上并覆盖所述插塞电极的顶面，设置在所述下电极上的强电介质膜，设置在所述强电介质膜上的第一上电极，以及第二上电极 电极，设置在铁电体膜上并与第一上电极分离; 其中，所述第一上电极在垂直于所述半导体衬底的表面的方向上观察时覆盖所述插头电极的中心。

公开(公告)号：US20070077721A1

公开(公告)日：2007-04-05

申请号：US11291837

申请日：2005-12-02

申请人： Hiroyuki Kanaya

发明人： Hiroyuki Kanaya

IPC分类号： H01L21/20 ,  H01L21/8242

CPC分类号： H01L27/11502 ,  H01L27/11507 ,  H01L28/57 ,  H01L28/65 ,  H01L28/75

摘要： A semiconductor device comprising a capacitive element which is provided above the semiconductor substrate and which has a capacitive insulation film held between an upper electrode and a lower electrode, a conductor for upper electrode which is connected to the upper electrode, a side-wall adsorbent member which covers a side wall of the conductor for upper electrode and which is composed of a material that adsorbs at least hydrogen, a conductor for lower electrode which is connected to the lower electrode, and a first adsorbent member which is provided at least either between the conductor for upper electrode and the capacitive insulation film or between the conductor for lower electrode and the capacitive insulation film, and which is composed of a material that adsorbs at least hydrogen.

摘要翻译： 一种半导体器件，包括设置在半导体衬底之上并且具有保持在上电极和下电极之间的电容绝缘膜的电容元件，连接到上电极的上电极用导体，侧壁吸附剂构件 其覆盖用于上部电极的导体的侧壁，并且由至少吸附氢的材料构成，用于连接到下部电极的下部电极的导体，以及设置在第一吸附构件之间的至少一个 用于上电极和电容绝缘膜的导体，或用于下电极的导体和电容绝缘膜之间，并且由至少吸附氢的材料组成。