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8 条记录 (耗时 0.152 秒)

    Method for producing fullerenes
    2.
    发明授权
    Method for producing fullerenes 失效
    制备富勒烯的方法

    公开(公告)号：US06953564B2

    公开(公告)日：2005-10-11

    申请号：US10260556

    申请日：2002-10-01

    申请人： Soichiro Kawakami ,  Tomoya Yamamoto ,  Hitomi Sano

    发明人： Soichiro Kawakami ,  Tomoya Yamamoto ,  Hitomi Sano

    IPC分类号： B01J3/00 ,  C01B31/02 ,  D01F9/12

    CPC分类号： B82Y30/00 ,  B01J3/008 ,  B01J2219/00065 ,  B01J2219/00087 ,  B01J2219/0027 ,  B01J2219/0277 ,  B01J2219/0286 ,  B82Y40/00 ,  C01B32/15 ,  C01B32/152 ,  Y02P20/544 ,  Y10S977/842

    摘要： A method for producing fullerenes, characterized in that said method includes a step (a) of contacting an aromatic compound-containing starting material with a supercritical fluid or a subcritical fluid at a temperature in a range of from 31° C. to 500° C. and at a pressure in a range of from 3.8 MPa to 60 MPa. Said supercritical fluid or said subcritical fluid is formed from one or more kinds of materials selected from the group consisting of an aromatic compound as said starting material, a solvent capable of dissolving said aromatic compound, water, dinitrogen monoxide, and ammonia.

    摘要翻译： 一种制备富勒烯的方法，其特征在于所述方法包括使含芳族化合物的原料与超临界流体或亚临界流体在31℃至500℃的温度范围内接触的步骤（a） 并且在3.8MPa至60MPa的范围内的压力下进行。 所述超临界流体或所述亚临界流体由选自作为所述起始原料的芳族化合物，能够溶解所述芳族化合物的溶剂，水，一氧化二氮和氨等的一种或多种材料形成。

    Method for producing nano-carbon materials
    3.
    发明申请
    Method for producing nano-carbon materials 失效
    生产纳米碳材料的方法

    公开(公告)号：US20050079119A1

    公开(公告)日：2005-04-14

    申请号：US10762343

    申请日：2004-01-23

    申请人： Soichiro Kawakami ,  Katsuhiko Inoue ,  Hitomi Sano ,  Nobuyuki Suzuki

    发明人： Soichiro Kawakami ,  Katsuhiko Inoue ,  Hitomi Sano ,  Nobuyuki Suzuki

    IPC分类号： B82B3/00 ,  B01J3/00 ,  C01B31/02 ,  D01F9/12

    CPC分类号： B82Y30/00 ,  B01J3/006 ,  B01J3/008 ,  B01J2219/00063 ,  B01J2219/00065 ,  B01J2219/00162 ,  B01J2219/00164 ,  B82Y40/00 ,  C01B32/162 ,  C01B2202/06 ,  Y02P20/544 ,  Y10S977/842

    摘要： A method for producing nano-carbon materials, having a step wherein a starting material comprising one or more kinds of compounds selected from the group consisting saturated hydrocarbons, unsaturated hydrocarbons, saturated cyclic hydrocarbons, and alcohols whose atomic ratio of the component carbon to the component oxygen is more than 2.0 and a catalyst are together treated at a temperature in a range of from 100 to 800° C. while being compressed at a pressure in a range of from 0.2 to 60 MPa, where said starting material is converted into a supercritical fluid or a subcritical fluid while said supercritical fluid or said subcritical fluid being contacted with said catalyst, or a step wherein said starting material, said catalyst and a supplementary material capable of functioning as a reaction promotion medium are together treated at a temperature in a range of from 100 to 800° C. while being compressed at a pressure in a range of from 0.2 to 60 MPa, where at least said supplementary material is converted into a supercritical fluid or a subcritical fluid and said starting material is contacted with said supercritical fluid or said subcritical fluid formed from said supplementary material while being contacted with said catalyst.

    摘要翻译： 一种纳米碳材料的制造方法，其特征在于，具有含有一种或多种选自饱和烃，不饱和烃，饱和环状烃以及成分碳与成分的原子比的醇的原料的工序 氧气大于2.0，并且催化剂在100至800℃的温度下一起处理，同时在0.2至60MPa的压力下压缩，其中所述起始材料转化为超临界 流体或亚临界流体，同时所述超临界流体或所述亚临界流体与所述催化剂接触，或者其中所述起始材料，所述催化剂和能够用作反应促进介质的辅助材料的步骤一起在一定范围内的温度 在100至800℃的压力下进行压缩，同时在0.2至60MPa的压力下进行压缩，至少在所述补充物中 原料被转化为超临界流体或亚临界流体，并且所述原料在与所述催化剂接触的同时与所述超临界流体或由所述辅助材料形成的所述亚临界流体接触。

    Deposited film forming system and process
    4.
    发明授权
    Deposited film forming system and process 有权
    沉积成膜系统及工艺

    公开(公告)号：US06397775B1

    公开(公告)日：2002-06-04

    申请号：US09419115

    申请日：1999-10-15

    申请人： Hitomi Sano ,  Masahiro Kanai ,  Atsushi Koike ,  Hiroshi Sugai

    发明人： Hitomi Sano ,  Masahiro Kanai ,  Atsushi Koike ,  Hiroshi Sugai

    IPC分类号： C23C1600

    CPC分类号： H01J37/32082 ,  C23C16/24 ,  C23C16/509 ,  C23C16/511 ,  C23C16/545 ,  H01J37/32532

    摘要： In a deposited film forming system having at least a vacuum vessel, means for feeding a film-forming material gas into the vacuum vessel, a discharge electrode provided inside the vacuum vessel, used to make the material gas into a plasma, and a power supply conductor for applying a high-frequency power to the discharge electrode, the system comprises an earth shield so disposed as to surround the power supply conductor inside the vacuum vessel, and a plurality of dielectric materials at least part of which is disposed between the power supply conductor and the earth shield. A process carried out using the deposited film forming system is also disclosed. The system and process can maintain large-area and uniform discharge for a long time and can form deposited films having a high quality and a superior uniformity, on a beltlike substrate that moves continuously.

    摘要翻译： 在具有至少真空容器的沉积膜形成系统中，用于将成膜材料气体进料到真空容器中的装置，设置在真空容器内部的用于使材料气体进入等离子体的放电电极，以及电源 导体，用于向放电电极施加高频电力，该系统包括一个接地屏蔽层，其设置成围绕真空容器内部的电源导体，以及多个电介质材料，其至少一部分设置在电源 导体和地盾。 还公开了使用沉积膜形成系统进行的工艺。 该系统和工艺可以长时间保持大面积均匀的放电，并且可以在连续移动的带状基板上形成具有高质量和优异均匀性的沉积膜。

    Method of forming photovoltaic element
    8.
    发明授权
    Method of forming photovoltaic element 有权
    光电元件形成方法

    公开(公告)号：US06413794B1

    公开(公告)日：2002-07-02

    申请号：US09649599

    申请日：2000-08-29

    申请人： Hitomi Sano ,  Masahiro Kanai ,  Hideo Tamura

    发明人： Hitomi Sano ,  Masahiro Kanai ,  Hideo Tamura

    IPC分类号： H01L2100

    CPC分类号： H01L31/206 ,  H01L31/022466 ,  H01L31/022483 ,  H01L31/076 ,  H01L31/208 ,  Y02E10/548 ,  Y02P70/521

    摘要： A method of forming a photovoltaic element according to the present invention comprises at least the steps of depositing a metal layer on a supporting member, depositing a metal oxide layer on the above metal layer, and arranging at least one or more pin structures, each of which is formed by stacking the predetermined n-type, i-type and p-type semiconductor layers, on a substrate formed by stacking on the above supporting member, the above metal layer and the above metal oxide layer in this order, wherein a step of subjecting the supporting member having the metal layer formed thereon to heat treatment is carried out between the two steps of depositing the above metal layer and depositing the above metal oxide layer. Accordingly, the present invention provides a method of forming a photovoltaic element which enables the solution of the problem that defective portions appear in a semiconductor layer because the semiconductor layer, which functions as a photoelectric converting layer, formed on irregularities of a metal layer surface cannot fully cover the metal layer due to the existence of projecting portions or portions with great height difference on a part of the irregularities.

    摘要翻译： 根据本发明的形成光电元件的方法至少包括在支撑构件上沉积金属层的步骤，在上述金属层上沉积金属氧化物层，并且布置至少一个或多个引脚结构 其通过将预定的n型，i型和p型半导体层堆叠在依次堆叠在上述支撑构件，上述金属层和上述金属氧化物层上形成的衬底上而形成，其中步骤 在沉积上述金属层并沉积上述金属氧化物层的两个步骤之间进行使其上形成有金属层的支撑构件进行热处理。 因此，本发明提供一种形成光电元件的方法，由于在金属层表面的不规则处形成的作为光电转换层的半导体层不能形成，所以能够解决缺陷部分出现在半导体层中的问题 由于在不规则部分上存在突出部分或高度差大的部分，完全覆盖金属层。