公开(公告)号：US10181540B2

公开(公告)日：2019-01-15

申请号：US13557255

申请日：2012-07-25

申请人： Daisuke Ide ,  Takahiro Mishima ,  Masato Shigematsu ,  Toshiaki Baba ,  Hiroyuki Mori ,  Mitsuaki Morigami ,  Yuji Hishida ,  Hitoshi Sakata ,  Ryo Goto

发明人： Daisuke Ide ,  Takahiro Mishima ,  Masato Shigematsu ,  Toshiaki Baba ,  Hiroyuki Mori ,  Mitsuaki Morigami ,  Yuji Hishida ,  Hitoshi Sakata ,  Ryo Goto

IPC分类号： H01L31/18 ,  H01L31/078 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/0747

摘要： An aspect of the invention provides a solar cell that comprises a semiconductor substrate having a light-receiving surface and a rear surface; a first semiconductor layer having a first conductivity type; a second semiconductor layer having a second conductivity type, the first semiconductor layer and the second semiconductor layer being formed on the rear surface, and a trench formed in the rear surface, wherein the first semiconductor layer is formed on the rear surface in which the trench is not formed, and the second semiconductor layer is formed on a side surface of the trench in an arrangement direction in which the first semiconductor layer and the second semiconductor layer are alternately arranged and on a bottom surface of the trench.

公开(公告)号：US20100031999A1

公开(公告)日：2010-02-11

申请号：US12509137

申请日：2009-07-24

申请人： Takahiro MISHIMA ,  Hitoshi Sakata

发明人： Takahiro MISHIMA ,  Hitoshi Sakata

IPC分类号： H01L31/042

CPC分类号： H01L31/022433 ,  H01L31/0516 ,  Y02E10/50

摘要： A first solar cell is electrically connected to a second solar cell electrically and arranged in an array direction. Each of the first and second solar cell comprises: a light-receiving surface; a rear surface; a plurality of n-type side electrodes and p-type side electrodes both formed in the array direction on the rear surface; a wiring member electrically connecting the first solar cell and the second solar cell and arranged over the plurality of n-type side electrodes and the plurality of p-type side electrodes; an n-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of n-type side electrodes, the part facing the wiring member; and a p-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of p-type side electrodes, the part facing the wiring member.

摘要翻译： 第一太阳能电池电连接到第二太阳能电池并沿阵列方向排列。 第一和第二太阳能电池中的每一个包括：光接收表面; 后表面 在后表面上沿阵列方向形成的多个n型侧电极和p型侧电极; 电连接第一太阳能电池和第二太阳能电池并布置在多个n型侧电极和多个p型侧电极上的布线部件; n型侧电极绝缘构件，其布置在所述布线构件上并且覆盖所述多个n型侧电极的一部分，所述部分面向所述布线构件; 以及p型侧电极绝缘构件，其布置在所述布线构件上并且覆盖所述多个p型侧电极的一部分，所述部分面向所述布线构件。

公开(公告)号：US09252301B2

公开(公告)日：2016-02-02

申请号：US13594201

申请日：2012-08-24

申请人： Mitsuaki Morigami ,  Yuji Hishida ,  Daisuke Ide ,  Hitoshi Sakata ,  Takahiro Mishima ,  Hiroyuki Mori ,  Masato Shigematsu

发明人： Mitsuaki Morigami ,  Yuji Hishida ,  Daisuke Ide ,  Hitoshi Sakata ,  Takahiro Mishima ,  Hiroyuki Mori ,  Masato Shigematsu

IPC分类号： H01L31/068 ,  H01L31/0224 ,  H01L31/18 ,  H01L31/0747

CPC分类号： H01L31/022441 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/1804 ,  H01L31/1884 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell includes semiconductor substrate of a first conductivity type; first semiconductor layer having a first conductivity type; second semiconductor layer having a second conductivity type; first electrode; second electrode; and insulating layer. First semiconductor layer and second semiconductor layer are formed on rear surface. When one end portion of insulating layer which is formed on first semiconductor layer and which is on a side close to first electrode is defined as first insulating-layer end portion and another end portion of insulating layer on a side close to second electrode is defined as second insulating-layer end portion in arrangement direction x, a distance from end point of second-semiconductor-layer end portion in contact with rear surface to second insulating-layer end portion in arrangement direction x is shorter than a distance from end point to first insulating-layer end portion in arrangement direction x.

摘要翻译： 太阳能电池包括第一导电类型的半导体衬底; 具有第一导电类型的第一半导体层; 具有第二导电类型的第二半导体层; 第一电极; 第二电极; 和绝缘层。 第一半导体层和第二半导体层形成在后表面上。 当形成在第一半导体层上并且靠近第一电极的一侧的绝缘层的一个端部被定义为第一绝缘层端部，并且绝缘层的靠近第二电极的一侧的绝缘层的另一端部被定义为 在布置方向x上的第二绝缘层端部，与布置方向x上的与背面至第二绝缘层端部接触的第二半导体层端部的端点的距离比从端点到第一的距离短 在排列方向x上的绝缘层端部。

公开(公告)号：US09252299B2

公开(公告)日：2016-02-02

申请号：US13060233

申请日：2009-06-29

申请人： Daisuke Ide ,  Hitoshi Sakata

发明人： Daisuke Ide ,  Hitoshi Sakata

IPC分类号： H01L31/0232 ,  H01L31/0224 ,  H01L31/048 ,  H01L31/05 ,  H01L31/054

CPC分类号： H01L31/022441 ,  H01L31/048 ,  H01L31/0516 ,  H01L31/0547 ,  Y02E10/52

摘要： A solar cell module 100 comprises a light reflection member 12 placed on the light receiving surface of a n-type semiconductor substrate 11 and having a light reflecting surface 12A facing the light receiving surface protection member 2. The light reflection member 12 is positioned on an opposite side to the n-side connecting electrode 14n across the n-type semiconductor substrate 11.

摘要翻译： 太阳能电池模块100包括放置在n型半导体衬底11的光接收表面上并具有面向光接收表面保护构件2的光反射表面12A的光反射构件12.光反射构件12位于 n侧半导体衬底11的与n侧连接电极14n相对的一侧。

公开(公告)号：US20120012179A1

公开(公告)日：2012-01-19

申请号：US13246021

申请日：2011-09-27

申请人： Toshio Asaumi ,  Hitoshi Sakata

发明人： Toshio Asaumi ,  Hitoshi Sakata

IPC分类号： H01L31/0216 ,  H01L31/0224

CPC分类号： H01L31/022441 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell, wherein contamination with an undesired impurity is suppressed, and solar cell characteristics are excellent. This solar cell is provided with: a semiconductor substrate having a photoreceiving surface and a back surface; a first semiconductor layer of a first conductivity type formed on a prescribed region of the back surface of the semiconductor substrate; a second semiconductor layer of a second conductivity type formed to extend over the back surface of the semiconductor substrate and the surface of the first semiconductor layer; and a cap layer formed between the first semiconductor layer and the second semiconductor layer, and containing no impurity of the first conductivity type.

摘要翻译： 一种太阳能电池，其中抑制了不想要的杂质的污染，并且太阳能电池特性优异。 该太阳能电池具备：具有光接收面和背面的半导体基板; 形成在所述半导体衬底的背面的规定区域上的第一导电类型的第一半导体层; 第二导电类型的第二半导体层形成为在半导体衬底的背表面和第一半导体层的表面上延伸; 以及形成在第一半导体层和第二半导体层之间并且不含有第一导电类型的杂质的覆盖层。

公开(公告)号：US20110132441A1

公开(公告)日：2011-06-09

申请号：US13001732

申请日：2009-06-29

申请人： Toshio Asaumi ,  Hitoshi Sakata

发明人： Toshio Asaumi ,  Hitoshi Sakata

IPC分类号： H01L31/06 ,  H01L31/0256

CPC分类号： H01L31/075 ,  H01L31/022441 ,  H01L31/03529 ,  H01L31/0682 ,  H01L31/0747 ,  Y02E10/547 ,  Y02E10/548

摘要： In a solar cell comprising a semiconductor substrate 11 and a i-type amorphous semiconductor layer 12 formed on a back surface of the semiconductor substrate 11, the i-type amorphous semiconductor layer 12 includes an exposed portion 12A exposed in a planer view, and a covered portion 12B covered with each of the p-type semiconductor layer 13 and the n-type semiconductor layer 14. A thickness T1 of the exposed portion 12A is less than a thickness T2 of the covered portion 12B.

摘要翻译： 在包含半导体衬底11和形成在半导体衬底11的背面上的i型非晶半导体层12的太阳能电池中，i型非晶半导体层12包括以平面视图暴露的暴露部分12A， 覆盖部分12B被p型半导体层13和n型半导体层14中的每一个覆盖。露出部分12A的厚度T1小于覆盖部分12B的厚度T2。

公开(公告)号：US08796539B2

公开(公告)日：2014-08-05

申请号：US13246021

申请日：2011-09-27

申请人： Toshio Asaumi ,  Hitoshi Sakata

发明人： Toshio Asaumi ,  Hitoshi Sakata

IPC分类号： H01L31/00 ,  H01L31/0224

CPC分类号： H01L31/022441 ,  H01L31/0747 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

摘要： A solar cell, wherein contamination with an undesired impurity is suppressed, and solar cell characteristics are excellent. This solar cell is provided with: a semiconductor substrate having a photoreceiving surface and a back surface; a first semiconductor layer of a first conductivity type formed on a prescribed region of the back surface of the semiconductor substrate; a second semiconductor layer of a second conductivity type formed to extend over the back surface of the semiconductor substrate and the surface of the first semiconductor layer; and a cap layer formed between the first semiconductor layer and the second semiconductor layer, and containing no impurity of the first conductivity type.

摘要翻译： 一种太阳能电池，其中抑制了不想要的杂质的污染，并且太阳能电池特性优异。 该太阳能电池具备：具有光接收面和背面的半导体基板; 形成在所述半导体衬底的背面的规定区域上的第一导电类型的第一半导体层; 第二导电类型的第二半导体层形成为在半导体衬底的背表面和第一半导体层的表面上延伸; 以及形成在第一半导体层和第二半导体层之间并且不含有第一导电类型的杂质的覆盖层。

公开(公告)号：US20100263705A1

公开(公告)日：2010-10-21

申请号：US12731276

申请日：2010-03-25

申请人： Daisuke Ide ,  Hitoshi Sakata

发明人： Daisuke Ide ,  Hitoshi Sakata

IPC分类号： H01L31/042 ,  H01L31/00 ,  H01L31/18

CPC分类号： H01L31/1804 ,  H01L31/048 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

摘要： An aspect of the invention provides a solar cell that comprises: a semiconductor substrate including a light-receiving surface and a back surface that is disposed at the opposite side from the light-receiving surface; a first conductivity type semiconductor region having a first conductivity type and formed on the back surface, the first conductivity type semiconductor region is a region that a first dopant is doped into the semiconductor substrate by laser radiation, wherein the first conductivity type semiconductor region is a region formed to extend in a direction that intersects cleavage planes of the semiconductor substrate; and a second conductivity type semiconductor region having a second conductivity type that is different from the first conductivity type and formed on the back surface.

摘要翻译： 本发明的一个方面提供了一种太阳能电池，其包括：半导体衬底，其包括光接收表面和设置在与所述光接收表面相对的一侧的背表面; 第一导电型半导体区域，具有第一导电类型并形成在背面上，第一导电类型半导体区域是通过激光辐射将第一掺杂剂掺杂到半导体衬底中的区域，其中第一导电类型半导体区域是 形成为沿与半导体衬底的解理面相交的方向延伸的区域; 以及具有与第一导电类型不同并形成在背面上的第二导电类型的第二导电类型半导体区域。

公开(公告)号：US06670542B2

公开(公告)日：2003-12-30

申请号：US09747956

申请日：2000-12-27

申请人： Hitoshi Sakata ,  Yasuo Kadonaga

发明人： Hitoshi Sakata ,  Yasuo Kadonaga

IPC分类号： H01L3100

CPC分类号： H01L31/0745 ,  H01L31/0236 ,  H01L31/02363 ,  H01L31/0747 ,  H01L31/202 ,  H01L31/204 ,  Y02E10/50 ,  Y02P70/521

摘要： This invention provides a photovoltaic semiconductor device of high efficiency capable of maintaining good interface characteristics of an amorphous semiconductor layer and a transparent electrode by eliminating damage caused by plasma of a plasma doping layer formed by doping impurity to the i-type amorphous semiconductor layer. The i-type amorphous semiconductor layer substantially not containing impurity for reducing electric resistance on a textured surface of an n-type single crystalline substrate. Then, the plasma doping layer is formed by exposing the n-type single crystalline substrate with the amorphous semiconductor layer formed thereon in an atmosphere of excited gas containing p-type impurity and diffusing the impurity to the amorphous semiconductor layer. A p-type amorphous semiconductor thin film layer containing p-type impurity is formed on the plasma doping layer by chemical vapor deposition and a transparent electrode 5 is formed on the p-type amorphous semiconductor thin film.

摘要翻译： 本发明提供一种能够通过消除由掺杂杂质形成的等离子体掺杂层对i型非晶半导体层造成的损伤而能够保持非晶半导体层和透明电极良好的界面特性的高效率的光电半导体器件。 基本上不含有用于降低n型单晶衬底的纹理表面上的电阻的杂质的i型非晶半导体层。 然后，通过在包含p型杂质的激发气体的气氛中使形成在其上的非晶半导体层露出n型单晶衬底并将杂质扩散到非晶半导体层来形成等离子体掺杂层。 通过化学气相沉积在等离子体掺杂层上形成含有p型杂质的p型非晶半导体薄膜层，在p型非晶半导体薄膜上形成透明电极5。

公开(公告)号：US09728658B2

公开(公告)日：2017-08-08

申请号：US12509137

申请日：2009-07-24

申请人： Takahiro Mishima ,  Hitoshi Sakata

发明人： Takahiro Mishima ,  Hitoshi Sakata

IPC分类号： H01L31/00 ,  H01L31/0224 ,  H01L31/05

CPC分类号： H01L31/022433 ,  H01L31/0516 ,  Y02E10/50

摘要： A first solar cell is electrically connected to a second solar cell electrically and arranged in an array direction. Each of the first and second solar cell comprises: a light-receiving surface; a rear surface; a plurality of n-type side electrodes and p-type side electrodes both formed in the array direction on the rear surface; a wiring member electrically connecting the first solar cell and the second solar cell and arranged over the plurality of n-type side electrodes and the plurality of p-type side electrodes; an n-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of n-type side electrodes, the part facing the wiring member; and a p-type side electrode insulating member that is arranged over the wiring member and covers a part of the plurality of p-type side electrodes, the part facing the wiring member.