公开(公告)号：US08198650B2

公开(公告)日：2012-06-12

申请号：US12329841

申请日：2008-12-08

申请人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

发明人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

IPC分类号： H01L29/66

CPC分类号： H01L29/861 ,  H01L29/402

摘要： A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.

摘要翻译： 公开了一种半导体器件。 半导体器件包括第一导电类型的第一区域和与第一区域相邻设置的第二导电类型的第二区域以形成pn结结构，第二导电类型的电阻修改区域和场响应修改 设置在电阻修改区域和第二区域之间的第二导电类型区域，其中场响应修改区域包括沿着场响应修改区域的厚度方向的变化的掺杂剂浓度分布。

公开(公告)号：US20100140730A1

公开(公告)日：2010-06-10

申请号：US12329841

申请日：2008-12-08

申请人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

发明人： Stanislav Ivanovich Soloviev ,  Ho-Young Cha ,  Peter Micah Sandvik ,  Alexey Vert ,  Jody Alan Fronheiser

IPC分类号： H01L31/107 ,  H01L31/02 ,  H01L29/06

CPC分类号： H01L29/861 ,  H01L29/402

摘要： A semiconductor device is disclosed. The semiconductor device comprises, a first region of a first conductivity type, a second region of a second conductivity type disposed adjacent to the first region to form a p-n junction structure, a resistance modification region of the second conductivity type, and a field response modification region of the second conductivity type disposed between the resistance modification region and the second region, wherein the field response modification region comprises a varying dopant concentration distribution along a thickness direction of the field response modification region.

摘要翻译： 公开了一种半导体器件。 半导体器件包括第一导电类型的第一区域和与第一区域相邻设置的第二导电类型的第二区域以形成pn结结构，第二导电类型的电阻修改区域和场响应修改 设置在电阻修改区域和第二区域之间的第二导电类型区域，其中场响应修改区域包括沿着场响应修改区域的厚度方向的变化的掺杂剂浓度分布。

公开(公告)号：US20130334143A1

公开(公告)日：2013-12-19

申请号：US13593191

申请日：2012-08-23

申请人： Kyung Guen SONG ,  Byung Ha LEE ,  Ho Young CHA

发明人： Kyung Guen SONG ,  Byung Ha LEE ,  Ho Young CHA

IPC分类号： C02F1/52 ,  B01D21/02 ,  B01D21/01

CPC分类号： C02F1/5236 ,  C02F2101/105

摘要： The present disclosure provides apparatus and method for phosphorous removal using dolomite by mixing an inorganic coagulant and dolomite together to improve the phosphorous removal efficiency and controlling pH, which has been lowered due to the use of the inorganic coagulant, close to the neutral by means of dolomite to improve the economic feasibility and minimize an additional neutralizing process.

摘要翻译： 本公开提供了使用白云石通过将无机凝结剂和白云石混合在一起来去除白云石的装置和方法，以提高除磷效率，并且通过使用无机凝结剂将pH降至最接近中性点 白云石，以改善经济可行性，并尽量减少额外的中和过程。

公开(公告)号：US20090140293A1

公开(公告)日：2009-06-04

申请号：US11946959

申请日：2007-11-29

申请人： Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Vinayak Tilak ,  Siddharth Rajan ,  Ho-Young Cha

发明人： Alexei Vertiatchikh ,  Kevin Sean Matocha ,  Peter Micah Sandvik ,  Vinayak Tilak ,  Siddharth Rajan ,  Ho-Young Cha

IPC分类号： H01L29/778

CPC分类号： H01L29/7786 ,  H01L29/2003

摘要： A heterostructure device or article includes a carrier transport layer, a back channel layer and a barrier layer. The carrier transport layer has a first surface and a second surface opposing to the first surface. The back channel layer is secured to the first surface of the carrier transport layer and the barrier layer is secured to the second surface of the carrier transport layer. Each of the carrier transport layer, the back channel layer and the barrier layer comprises an aluminum gallium nitride alloy. The article further includes a 2D electron gas at an interface of the second surface of the carrier transport layer and a surface of the barrier layer. The 2D electron gas is defined by a bandgap differential at an interface, which allows for electron mobility. A system includes a heterostructure field effect transistor that includes the article.

摘要翻译： 异质结构器件或制品包括载流子传输层，背沟道层和阻挡层。 载流子传输层具有与第一表面相对的第一表面和第二表面。 背沟道层被固定到载流子传输层的第一表面，并且阻挡层固定到载流子传输层的第二表面。 载流子传输层，背沟道层和阻挡层中的每一个包括氮化镓铝合金。 该制品还包括在载流子传输层的第二表面和势垒层的表面的界面处的2D电子气体。 2D电子气体由界面处的带隙差分限定，这允许电子迁移率。 一种系统包括包括该物品的异质结构场效应晶体管。

公开(公告)号：US20130168325A1

公开(公告)日：2013-07-04

申请号：US13680703

申请日：2012-11-19

申请人： Kyung Guen Song ,  Seok Won Hong ,  Byung Ha Lee ,  Ho Young Cha

发明人： Kyung Guen Song ,  Seok Won Hong ,  Byung Ha Lee ,  Ho Young Cha

IPC分类号： C02F1/52

CPC分类号： C02F1/5236 ,  C02F1/5227 ,  C02F1/5281 ,  C02F2101/105 ,  C02F2209/06 ,  C02F2301/08

摘要： Provided are an apparatus for removing phosphorous from wastewater including: a first coagulation sedimentation unit including a first rapid mixing tank, a first flocculation tank and a first sedimentation tank; and a second coagulation sedimentation unit including a second rapid mixing tank, a second flocculation tank and a second sedimentation tank, and a method for removing phosphorous using the same. The first rapid mixing tank stirs wastewater and an inorganic coagulant with low basicity at high speed and the second rapid mixing tank stirs the treated water supplied from the first sedimentation tank and an inorganic coagulant with high basicity at high speed. As a result, removal of phosphorous from the wastewater is maximized and coagulation and sedimentation may be optimized through control of metal content in the inorganic coagulants added to the first rapid mixing tank and the second rapid mixing tank.

摘要翻译： 提供了一种用于从废水中除去磷的设备，包括：第一凝结沉降单元，包括第一快速混合罐，第一絮凝罐和第一沉淀池; 以及包括第二快速混合槽，第二絮凝槽和第二沉淀池的第二凝结沉降单元，以及使用其形成的除去磷的方法。 第一快速混合槽高速搅拌废水和碱度低的无机凝结剂，第二快速混合槽以高速度搅拌从第一沉淀池供给的处理水和高碱度的无机凝结剂。 结果，从废水中除去磷最多，通过控制添加到第一快速混合罐和第二快速混合罐中的无机凝结剂中的金属含量，可以优化凝结和沉淀。