公开(公告)号：US20200350030A1

公开(公告)日：2020-11-05

申请号：US16921879

申请日：2020-07-06

申请人： Guobiao ZHANG ,  Hongyu YU ,  Yuejin GUO ,  Shengming ZHOU ,  Guoxing ZHANG ,  Guangzhao LIU ,  Mingtao HU ,  Wang ZHANG ,  Mei Shen ,  Yida Li ,  Xiaodong Xiang

发明人： Guobiao ZHANG ,  Hongyu YU ,  Yuejin GUO ,  Shengming ZHOU ,  Guoxing ZHANG ,  Guangzhao LIU ,  Mingtao HU ,  Wang ZHANG ,  Mei Shen ,  Yida Li ,  Xiaodong Xiang

IPC分类号： G11C17/16 ,  G11C29/00 ,  G11C7/14 ,  G11C11/56 ,  G11C13/00 ,  G11C17/18

摘要： The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAMMB). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances.

公开(公告)号：US20160291176A1

公开(公告)日：2016-10-06

申请号：US15037449

申请日：2014-11-20

申请人： Hongyu Yu ,  Hai Huang

发明人： Hongyu Yu ,  Hai Huang

IPC分类号： G01V1/18 ,  G01H11/06 ,  G01P13/00

CPC分类号： G01V1/18 ,  G01H11/06 ,  G01P13/00

摘要： The invention relates to microfabrication technology for producing sensing cells, for use, for example, in molecular electronic transducer (MET) based seismometers devices. In some aspects, a method for fabricating a sensing element is provided. The method includes providing a first wafer including a first substrate, a second substrate, and a first insulating layer between therebetween, etching a first fluid throughhole through the first substrate, the first insulating layer, and the second substrate, and coating the first substrate and second substrate with a first and second conductive coating, respectively. The method also includes providing a second wafer including a third substrate, a fourth substrate, and a second insulating layer therebetween, etching a second fluid throughhole through the third substrate, the second insulating layer, and the fourth substrate, and coating the third substrate with a third conductive coating from top and the fourth substrate with a fourth conductive coating from back.

摘要翻译： 本发明涉及用于生产感测单元的微细加工技术，其用于例如基于分子电子换能器（MET）的地震仪装置中。 在一些方面，提供了一种用于制造感测元件的方法。 该方法包括提供包括第一衬底，第二衬底和第二衬底之间的第一绝缘层的第一晶片，通过第一衬底，第一绝缘层和第二衬底蚀刻第一流体通孔，以及涂覆第一衬底和 第二基板分别具有第一和第二导电涂层。 该方法还包括提供包括第三衬底，第四衬底和第二绝缘层的第二晶片，通过第三衬底，第二绝缘层和第四衬底蚀刻第二流体通孔，并且用第 来自顶部和第四基底的第三导电涂层，其后面具有第四导电涂层。

公开(公告)号：US20120215121A1

公开(公告)日：2012-08-23

申请号：US13461716

申请日：2012-05-01

申请人： Tzung K. Hsiai ,  Gopikrishnan Soundararajan ,  Eun Sok Kim ,  Hongyu Yu ,  Mahsa Rouhanizadeh ,  Christina Tiantian Lin

发明人： Tzung K. Hsiai ,  Gopikrishnan Soundararajan ,  Eun Sok Kim ,  Hongyu Yu ,  Mahsa Rouhanizadeh ,  Christina Tiantian Lin

IPC分类号： A61B5/027

CPC分类号： B81C1/00246 ,  G01N3/24

摘要： A micromachined sensor for measuring vascular parameters, such as fluid shear stress, includes a substrate having a front-side surface, and a backside surface opposite the front-side surface. The sensor includes a diaphragm overlying a cavity etched within the substrate, and a heat sensing element disposed on the front-side surface of the substrate and on top of the cavity and the diaphragm. The heat sensing element is electrically couplable to electrode leads formed on the backside surface of the substrate. The sensor includes an electronic system connected to the backside surface and configured to measure a change in heat convection from the sensing element to surrounding fluid when the sensing element is heated by applying an electric current thereto, and further configured to derive from the change in heat convection vascular parameters such as the shear stress of fluid flowing past the sensing element.

摘要翻译： 用于测量诸如流体剪切应力的血管参数的微加工传感器包括具有前侧表面的基底和与前侧表面相对的背侧表面。 传感器包括覆盖在衬底内蚀刻的空腔的膜片，以及设置在衬底的前侧表面上并且在空腔和隔膜顶部上的感热元件。 热敏元件可电连接到形成在基板的背面上的电极引线。 所述传感器包括连接到所述背面的电子系统，并且被配置为当通过向其施加电流来加热所述感测元件时，测量从所述感测元件到周围流体的热对流变化，并进一步被配置为从热变化 对流血管参数，例如流过感测元件的流体的剪切应力。

公开(公告)号：US20110256682A1

公开(公告)日：2011-10-20

申请号：US12761159

申请日：2010-04-15

申请人： Xiong-Fei Yu ,  Wei-Yang Lee ,  Da-Yuan Lee ,  Kuang-Yuan Hsu ,  Yuan-Hung Chiu ,  Hun-Jan Tao ,  Hongyu Yu ,  Wu Ling

发明人： Xiong-Fei Yu ,  Wei-Yang Lee ,  Da-Yuan Lee ,  Kuang-Yuan Hsu ,  Yuan-Hung Chiu ,  Hun-Jan Tao ,  Hongyu Yu ,  Wu Ling

IPC分类号： H01L21/336 ,  H01L21/28

CPC分类号： H01L29/517 ,  H01L21/02181 ,  H01L21/0228 ,  H01L21/02337 ,  H01L21/02348 ,  H01L21/823857 ,  H01L29/513 ,  H01L29/66545

摘要： A method is provided for fabricating a semiconductor device. A semiconductor substrate is provided. A first high-k dielectric layer is formed on the semiconductor substrate. A first treatment is performed on the high-k dielectric layer. In an embodiment, the treatment includes a UV radiation in the presence of O2 and/or O3. A second high-k dielectric layer is formed on the treated first high-k dielectric layer. A second treatment is performed on the second high-k dielectric layer. In an embodiment, the high-k dielectric layer forms a gate dielectric layer of a field effect transistor.

摘要翻译： 提供了制造半导体器件的方法。 提供半导体衬底。 在半导体衬底上形成第一高k电介质层。 在高k电介质层上进行第一处理。 在一个实施方案中，该处理包括在存在O 2和/或O 3的情况下的UV辐射。 在被处理的第一高k电介质层上形成第二高k电介质层。 对第二高k电介质层进行第二处理。 在一个实施例中，高k电介质层形成场效应晶体管的栅介质层。

公开(公告)号：US20110183509A1

公开(公告)日：2011-07-28

申请号：US13080562

申请日：2011-04-05

申请人： Bogdan Govoreanu ,  HongYu Yu ,  Hag-Ju Cho

发明人： Bogdan Govoreanu ,  HongYu Yu ,  Hag-Ju Cho

IPC分类号： H01L21/28

CPC分类号： H01L21/28273 ,  H01L21/28282 ,  H01L29/513 ,  H01L29/7881

摘要： A non-volatile memory device having a control gate on top of the second dielectric (interpoly or blocking dielectric), at least a bottom layer of the control gate in contact with the second dielectric being constructed in a material having a predefined high work-function and showing a tendency to reduce its work-function when in contact with a group of certain high-k materials after full device fabrication. At least a top layer of the second dielectric, separating the bottom layer of the control gate from the rest of the second dielectric, is constructed in a predetermined high-k material, chosen outside the group for avoiding a reduction in the work-function of the material of the bottom layer of the control gate. In the manufacturing method, the top layer is created in the second dielectric before applying the control gate.

摘要翻译： 一种非易失性存储器件，其具有位于第二电介质（互补或阻塞电介质）顶部的控制栅极，至少与第二电介质接触的控制栅极的底层被构造成具有预定义的高功函数的材料 并且在完全器件制造之后显示出与一组高k材料接触时降低其功能的趋势。 至少第二电介质的顶层将控制栅极的底层与第二电介质的其余部分分开，以预定的高k材料构成，选择在组外部，以避免工作功能的降低 控制门底层的材料。 在制造方法中，在施加控制栅极之前，在第二电介质中产生顶层。

公开(公告)号：US20090206417A1

公开(公告)日：2009-08-20

申请号：US12389315

申请日：2009-02-19

申请人： Shou-Zen Chang ,  HongYu Yu ,  Thomas Y. Hoffman

发明人： Shou-Zen Chang ,  HongYu Yu ,  Thomas Y. Hoffman

IPC分类号： H01L27/092 ,  H01L21/8238

CPC分类号： H01L21/823857 ,  H01L29/495 ,  H01L29/513 ,  H01L29/517

摘要： A method for manufacturing a dual work function semiconductor device is disclosed. In one aspect, a method starts by forming a host dielectric layer over a first and second region of a substrate. A first dielectric capping layer is formed overlying the host dielectric layer on the first and second region and later selectively removed to expose an underlying layer on the first region. A Hf-based dielectric capping layer is formed overlying the underlying layer on the first region and the first dielectric capping layer on the second region. The Hf-based dielectric capping layer is selected to have a healing effect on the exposed surface of the underlying layer on the first region. A control electrode is formed overlaying the Hf-based dielectric capping layer on the first region and on the second region.

摘要翻译： 公开了一种用于制造双功能半导体器件的方法。 在一个方面，一种方法通过在衬底的第一和第二区域上形成主电介质层开始。 形成第一介电覆盖层，覆盖第一和第二区域上的主介电层，然后选择性地去除以暴露第一区域上的下层。 形成Hf基电介质覆盖层，覆盖第一区域上的下层和第二区域上的第一介电覆盖层。 选择Hf基介电覆盖层以对第一区域上的下层的暴露表面具有愈合效果。 在第一区域和第二区域上形成覆盖Hf基电介质覆盖层的控制电极。

公开(公告)号：US20090184376A1

公开(公告)日：2009-07-23

申请号：US12358188

申请日：2009-01-22

申请人： Hag-Ju Cho ,  Anabela Veloso ,  HongYu Yu ,  Stefan Kubicek ,  Shou-Zen Chang

发明人： Hag-Ju Cho ,  Anabela Veloso ,  HongYu Yu ,  Stefan Kubicek ,  Shou-Zen Chang

IPC分类号： H01L27/092 ,  H01L21/28

CPC分类号： H01L21/823857 ,  H01L21/823462 ,  H01L27/088 ,  H01L27/092 ,  H01L29/513

摘要： A dual work function semiconductor device and method for fabricating the same are disclosed. In one aspect, a device includes a first and second transistor on a first and second substrate region. The first and second transistors include a first gate stack having a first work function and a second gate stack having a second work function respectively. The first and second gate stack each include a host dielectric, a gate electrode comprising a metal layer, and a second dielectric capping layer therebetween. The second gate stack further has a first dielectric capping layer between the host dielectric and metal layer. The metal layer is selected to determine the first work function. The first dielectric capping layer is selected to determine the second work function.

摘要翻译： 公开了一种双功能半导体器件及其制造方法。 一方面，一种器件包括在第一和第二衬底区域上的第一和第二晶体管。 第一和第二晶体管包括分别具有第一功函数的第一栅极堆叠和具有第二功函数的第二栅极堆叠。 第一和第二栅极堆叠各自包括主电介质，包括金属层的栅电极和它们之间的第二电介质覆盖层。 第二栅极堆叠还在主介质和金属层之间具有第一介电覆盖层。 选择金属层以确定第一功函数。 选择第一介电覆盖层以确定第二功函数。

公开(公告)号：US07504329B2

公开(公告)日：2009-03-17

申请号：US11382875

申请日：2006-05-11

申请人： HongYu Yu ,  Chen JingDe ,  Li Mingfu ,  Dim-Lee Kwong ,  Serge Biesemans ,  Jorge Adrian Kittl

发明人： HongYu Yu ,  Chen JingDe ,  Li Mingfu ,  Dim-Lee Kwong ,  Serge Biesemans ,  Jorge Adrian Kittl

IPC分类号： H01L21/477

CPC分类号： H01L21/28097 ,  H01L21/265 ,  H01L21/28088 ,  H01L21/28518 ,  H01L21/823842 ,  H01L21/823864 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/785

摘要： Low work function metals for use as gate electrode in nMOS devices are provided. The low work function metals include alloys of lanthanide(s), metal and semiconductor. In particular, an alloy of nickel-ytterbium (NiYb) is used to fully silicide (FUSI) a silicon gate. The resulting nickel-ytterbium-silicon gate electrode has a work function of about 4.22 eV.

摘要翻译： 提供了用作nMOS器件中的栅电极的低功函数金属。 低功函数金属包括镧系元素，金属和半导体的合金。 特别地，使用镍 - 镱（NiYb）的合金来完全硅化（FUSI）硅栅极。 所得的镍镱硅栅电极具有约4.22eV的功函数。

公开(公告)号：US20090050982A1

公开(公告)日：2009-02-26

申请号：US11754820

申请日：2007-05-29

申请人： Luigi Pantisano ,  Tom Schram ,  Stefan De Gendt ,  Amal Akheyar ,  XinPeng Wang ,  Mingfu Li ,  HongYu Yu

发明人： Luigi Pantisano ,  Tom Schram ,  Stefan De Gendt ,  Amal Akheyar ,  XinPeng Wang ,  Mingfu Li ,  HongYu Yu

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L21/28079 ,  H01L21/28088 ,  H01L29/495 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/785

摘要： A new MOSFET device is described comprising a metal gate electrode, a gate dielectric and an interfacial layer. The interfacial layer comprises a lanthanum hafnium oxide material for modulating the effective work function of the metal gate. The gate dielectric material in contact with the interfacial layer is different that the interfacial layer material. A method for its manufacture is also provided and its applications.

摘要翻译： 描述了一种新的MOSFET器件，其包括金属栅极电极，栅极电介质和界面层。 界面层包括用于调节金属栅极的有效功函数的镧氧化镧材料。 与界面层接触的栅极电介质材料与界面层材料不同。 还提供了其制造方法及其应用。

公开(公告)号：US20080210543A1

公开(公告)日：2008-09-04

申请号：US12041577

申请日：2008-03-03

申请人： Tzung K. Hsiai ,  Gopkrishnani Soundararajan ,  E.S. Kim ,  Hongyu Yu ,  Mahsa Rouhanizadeh ,  Tiantian Lin

发明人： Tzung K. Hsiai ,  Gopkrishnani Soundararajan ,  E.S. Kim ,  Hongyu Yu ,  Mahsa Rouhanizadeh ,  Tiantian Lin

IPC分类号： C23C14/34

CPC分类号： B81C1/00246 ,  G01N3/24

摘要： A micromachined sensor for measuring vascular parameters, such as fluid shear stress, includes a substrate having a front-side surface, and a backside surface opposite the front-side surface. The sensor includes a diaphragm overlying a cavity etched within the substrate, and a heat sensing element disposed on the front-side surface of the substrate and on top of the cavity and the diaphragm. The heat sensing element is electrically couplable to electrode leads formed on the backside surface of the substrate. The sensor includes an electronic system connected to the backside surface and configured to measure a change in heat convection from the sensing element to surrounding fluid when the sensing element is heated by applying an electric current thereto, and further configured to derive from the change in heat convection vascular parameters such as the shear stress of fluid flowing past the sensing element.

摘要翻译： 用于测量诸如流体剪切应力的血管参数的微加工传感器包括具有前侧表面的基底和与前侧表面相对的背侧表面。 传感器包括覆盖在衬底内蚀刻的空腔的膜片，以及设置在衬底的前侧表面上并且在空腔和隔膜顶部上的感热元件。 热敏元件可电连接到形成在基板的背面上的电极引线。 所述传感器包括连接到所述背面的电子系统，并且被配置为当通过向其施加电流来加热所述感测元件时，测量从所述感测元件到周围流体的热对流变化，并进一步被配置为从热变化 对流血管参数，例如流过感测元件的流体的剪切应力。