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1.Method of minimizing beam bending of MEMS device by reducing the interfacial bonding strength between sacrificial layer and MEMS structure 失效
标题翻译: 通过降低牺牲层和MEMS结构之间的界面结合强度来最小化MEMS器件的束弯曲的方法公开(公告)号:US08541854B2
公开(公告)日:2013-09-24
申请号:US13349596
申请日:2012-01-13
申请人: John M. Cotte , Nils D. Hoivik , Christopher Jahnes , Minhua Lu , Hongqing Zhang
发明人: John M. Cotte , Nils D. Hoivik , Christopher Jahnes , Minhua Lu , Hongqing Zhang
IPC分类号: H01L21/00
CPC分类号: B81C1/00476 , G02B26/0841 , Y10T156/11 , Y10T428/24942 , Y10T428/24975 , Y10T428/263
摘要: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.
摘要翻译: 通过降低牺牲层和MEMS结构之间的界面强度,使MEMS器件的光束弯曲最小化。
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2.METHOD OF MINIMIZING BEAM BENDING OF MEMS DEVICE BY REDUCING THE INTERFACIAL BONDING STRENGTH BETWEEN SACRIFICIAL LAYER AND MEMS STRUCTURE 失效
标题翻译: 通过减少MEMS层与MEMS结构之间的界面结合强度来最小化MEMS器件的光束弯曲的方法公开(公告)号:US20120103534A1
公开(公告)日:2012-05-03
申请号:US13349596
申请日:2012-01-13
申请人: JOHN M. COTTE , Nils D. Hoivik , Christopher Jahnes , Minhua Lu , Hongqing Zhang
发明人: JOHN M. COTTE , Nils D. Hoivik , Christopher Jahnes , Minhua Lu , Hongqing Zhang
CPC分类号: B81C1/00476 , G02B26/0841 , Y10T156/11 , Y10T428/24942 , Y10T428/24975 , Y10T428/263
摘要: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.
摘要翻译: 通过降低牺牲层和MEMS结构之间的界面强度,使MEMS器件的光束弯曲最小化。
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3.METHOD OF MINIMIZING BEAM BENDING OF MEMS DEVICE BY REDUCING THE INTERFACIAL BONDING STRENGTH BETWEEN SACRIFICIAL LAYER AND MEMS STRUCTURE 有权
标题翻译: 通过降低MEMS层与MEMS结构之间的界面结合强度来最小化MEMS器件的光束弯曲的方法公开(公告)号:US20090258455A1
公开(公告)日:2009-10-15
申请号:US12101627
申请日:2008-04-11
申请人: John M. Cotte , Nils D. Hoivik , Christopher Jahnes , Minhua Lu , Hongqing Zhang
发明人: John M. Cotte , Nils D. Hoivik , Christopher Jahnes , Minhua Lu , Hongqing Zhang
CPC分类号: B81C1/00476 , G02B26/0841 , Y10T156/11 , Y10T428/24942 , Y10T428/24975 , Y10T428/263
摘要: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.
摘要翻译: 通过降低牺牲层和MEMS结构之间的界面强度,使MEMS器件的光束弯曲最小化。
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4.Method of minimizing beam bending of MEMS device by reducing the interfacial bonding strength between sacrificial layer and MEMS structure 有权
标题翻译: 通过降低牺牲层和MEMS结构之间的界面结合强度来最小化MEMS器件的束弯曲的方法公开(公告)号:US08163584B2
公开(公告)日:2012-04-24
申请号:US12101627
申请日:2008-04-11
申请人: Minhua Lu , Nils D. Hoivik , Christopher Jahnes , John M. Cotte , Hongqing Zhang
发明人: Minhua Lu , Nils D. Hoivik , Christopher Jahnes , John M. Cotte , Hongqing Zhang
IPC分类号: H01L21/00
CPC分类号: B81C1/00476 , G02B26/0841 , Y10T156/11 , Y10T428/24942 , Y10T428/24975 , Y10T428/263
摘要: The beam bending of a MEMS device is minimized by reducing interfacial strength between a sacrificial layer and a MEMS structure.
摘要翻译: 通过降低牺牲层和MEMS结构之间的界面强度,使MEMS器件的光束弯曲最小化。
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