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14 条记录 (耗时 0.014 秒)

    Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration
    2.
    发明授权
    Self-aligned, lateral diffusion barrier in metal lines to eliminate electromigration 失效
    金属线中的自对准横向扩散阻挡层，以消除电迁移

    公开(公告)号：US06597067B1

    公开(公告)日：2003-07-22

    申请号：US08839843

    申请日：1997-04-17

    申请人： Glenn Allen Biery ,  Daniel Mark Boyne ,  Hormazdyar Minocher Dalal ,  H. Daniel Schnurmann

    发明人： Glenn Allen Biery ,  Daniel Mark Boyne ,  Hormazdyar Minocher Dalal ,  H. Daniel Schnurmann

    IPC分类号： H01L2348

    CPC分类号： H01L23/53257 ,  H01L23/5283 ,  H01L23/53214 ,  H01L2924/0002 ,  Y10S257/915 ,  H01L2924/00

    摘要： An interconnection wiring structure in an integrated circuit chip designed to eliminate electromigration. The structure includes segments of aluminum interspersed with segments of refractory metal, wherein each aluminum segment is followed by a segment of refractory metal. The aluminum and refractory metal segments are aligned with respect to each other to ensure electrical continuity and to force the electrical current to sequentially cross the aluminum and the refractory metal segments. The above structure can be advantageously enhanced by adding an underlayer, an overlayer or both, all of which are made of refractory metal. The interconnection wire structure described above can be expanded to include vias or studs linking interconnection lines placed at different levels of the IC chip.

    摘要翻译： 设计用于消除电迁移的集成电路芯片中的互连布线结构。 该结构包括散布有难熔金属片段的铝片段，其中每个铝片段之后是难熔金属片段。 铝和难熔金属段相对于彼此对准以确保电连续性并且迫使电流顺序地交叉铝和难熔金属段。 通过添加由难熔金属制成的底层，覆盖层或两者均可有利地提高上述结构。 上述互连线结构可以扩展为包括连接放置在IC芯片的不同级别的互连线的通孔或螺柱。

    Method for forming features upon a substrate
    5.
    发明授权
    Method for forming features upon a substrate 失效
    在基底上形成特征的方法

    公开(公告)号：US6051273A

    公开(公告)日：2000-04-18

    申请号：US972184

    申请日：1997-11-18

    申请人： Hormazdyar Minocher Dalal ,  Gene Joseph Gaudenzi ,  Frederic Robert Pierre ,  Georges Henri Robert

    发明人： Hormazdyar Minocher Dalal ,  Gene Joseph Gaudenzi ,  Frederic Robert Pierre ,  Georges Henri Robert

    IPC分类号： B23K3/06 ,  B05D5/12

    CPC分类号： B23K3/0623

    摘要： A material deposition process is disclosed in which apertures of a contact mask used therein have a constricted opening terminating in a `knife edge` in a sidewall thereof near the top mask side, especially within the top 25% of the mask thickness above the substrate. A process is disclosed in which the mask, in addition, has apertures which have larger dimension lower openings on a bottom side of the mask contacting the substrate than constricted openings near the top side of the mask. Single solder bump and "bump on bump" over BLM (ball limiting metallurgy) processes are disclosed which utilize such contact mask to reduce the damage and detaching of such features during processing and subsequent handling.

    摘要翻译： 公开了一种材料沉积工艺，其中在其中使用的接触掩模的孔具有在靠近顶部掩模侧的侧壁中的“刀刃”中终止的收缩开口，特别是在衬底上方的掩模厚度的顶部25％之内。 公开了一种方法，其中掩模另外具有孔，其具有在与掩模接触的底部的较大尺寸的下部开口，而不是靠近掩模顶侧的收缩开口。 公开了在BLM（球限制冶金）方法中的单个焊料凸块和“凸起凸起”工艺，其利用这种接触掩模在处理和随后的处理期间减少这些特征的损坏和分离。

    Method of making and laterally filling key hole structure for ultra fine pitch conductor lines
    6.
    发明授权
    Method of making and laterally filling key hole structure for ultra fine pitch conductor lines 失效
    超细间距导线的关键孔结构的制作和横向填充方法

    公开(公告)号：US5976970A

    公开(公告)日：1999-11-02

    申请号：US626764

    申请日：1996-03-29

    申请人： Hormazdyar Minocher Dalal ,  Hazara Singh Rathore

    发明人： Hormazdyar Minocher Dalal ,  Hazara Singh Rathore

    IPC分类号： H01L21/768 ,  H01L23/532 ,  H01L21/283

    CPC分类号： H01L21/76877 ,  H01L23/53233 ,  H01L2924/0002

    摘要： A method of forming electrical conductors having sub-half-micron geometries and using a high yield process is described. Trenches provided with an overhang are positioned where a metal interconnection is to be formed. A composite insulator layer is deposited and is followed by laterally filling with metal the trench under the overhang. Excess metal is then chem-mech polished. Only the non-crucial neck of the metal wiring is left exposed during polishing. Since spacing between the exposed metal lines is increased, it requires longer distances for the metal to smear and cause unwanted shorts. Three methods are described to laterally fill the trenches under the overhang. A first method describes the process parameters to achieve lateral deposition by high surface mobility and low sticking coefficient. A second method teaches a technique of inducing micro-creep to laterally fill the trenches under the overhang. A third method shows metal layered structures where volume expansion takes place upon phase transformation.

    摘要翻译： 描述了形成具有亚半微米几何形状并且使用高产量工艺的电导体的方法。 设置有突出端的沟槽位于要形成金属互连的位置。 沉积复合绝缘体层，然后用金属横向填充突出部下方的沟槽。 然后过量的金属被化学磨光。 只有金属布线的非关键颈部在抛光过程中才会露出。 由于暴露的金属线之间的间距增加，所以需要更长的距离来使金属涂抹并引起不想要的短路。 描述了三种方法来横向填充突出部下方的沟槽。 第一种方法描述了通过高表面迁移率和低粘附系数实现横向沉积的工艺参数。 第二种方法教导了一种诱导微蠕变以横向填充突出部下方的沟槽的技术。 第三种方法显示了在相变时发生体积膨胀的金属层状结构。