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1.发明授权公开(公告)号：US08564174B2
公开(公告)日：2013-10-22
申请号：US13339505
申请日：2011-12-29
IPC分类号： H03H9/17
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
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2.发明授权Integrated acoustic bandgap devices for energy confinement and methods of fabricating same 有权用于能量限制的集成声带隙装置及其制造方法公开(公告)号：US08089195B2
公开(公告)日：2012-01-03
申请号：US12002524
申请日：2007-12-17
IPC分类号： H03H9/17
CPC分类号： H01L27/02 , H03H9/0557 , H03H9/175 , H03H9/564 , H03H9/589
摘要： The present invention is directed to monolithic integrated circuits incorporating an oscillator element that is particularly suited for use in timing applications. The oscillator element includes a resonator element having a piezoelectric material disposed between a pair of electrodes. The oscillator element also includes an acoustic confinement structure that may be disposed on either side of the resonator element. The acoustic confinement element includes alternating sets of low and high acoustic impedance materials. A temperature compensation layer may be disposed between the piezoelectric material and at least one of the electrodes. The oscillator element is monolithically integrated with an integrated circuit element through an interconnection. The oscillator element and the integrated circuit element may be fabricated sequentially or concurrently.
摘要翻译： 本发明涉及包含特别适用于定时应用的振荡器元件的单片集成电路。 振荡器元件包括具有设置在一对电极之间的压电材料的谐振元件。 振荡器元件还包括可以设置在谐振器元件的任一侧的声学限制结构。 声学限制元件包括交替的低和高声阻抗材料组。 温度补偿层可以设置在压电材料和至少一个电极之间。 振荡器元件通过互连与集成电路元件单片集成。 振荡器元件和集成电路元件可以顺序地或同时地制造。
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公开(公告)号：US20060237826A1
公开(公告)日：2006-10-26
申请号：US11455969
申请日：2006-06-20
申请人： David Boulin , Hugo Safar
发明人： David Boulin , Hugo Safar
IPC分类号： H01L23/495
CPC分类号： H01L23/49562 , H01L23/3107 , H01L2924/0002 , H01L2924/00
摘要： The specification describes a plastic overmolded package for high power devices that has a very low lead count, typically fewer than eight, and in a preferred embodiment, only two. The leads occupy essentially the same linear space as the multiple leads in a conventional package and thus have a wide-blade configuration. To improve mechanical integrity, the leads in the package are provided with retention slots to add back the equivalent of the plastic joints in the spaces that were eliminated due to the wide-blade design. The retention slots extend in the width dimension of the leads.
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公开(公告)号：US20130300259A1
公开(公告)日：2013-11-14
申请号：US13941619
申请日：2013-07-15
IPC分类号： H01L41/053
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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公开(公告)号：US08487511B2
公开(公告)日：2013-07-16
申请号：US13549676
申请日：2012-07-16
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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公开(公告)号：US20120013224A1
公开(公告)日：2012-01-19
申请号：US13246304
申请日：2011-09-27
IPC分类号： H01L41/053
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
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公开(公告)号：US20060170095A1
公开(公告)日：2006-08-03
申请号：US11049407
申请日：2005-02-02
申请人： John Brennan , Joseph Freund , Ralph Moyer , John Osenbach , Hugo Safar , Thomas Shilling
发明人： John Brennan , Joseph Freund , Ralph Moyer , John Osenbach , Hugo Safar , Thomas Shilling
IPC分类号： H01L23/34
CPC分类号： H01L23/047 , H01L23/10 , H01L23/24 , H01L23/36 , H01L23/3675 , H01L23/564 , H01L23/66 , H01L24/48 , H01L24/49 , H01L24/85 , H01L25/0655 , H01L2224/48091 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/49109 , H01L2224/85203 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01027 , H01L2924/01029 , H01L2924/01033 , H01L2924/01074 , H01L2924/01082 , H01L2924/14 , H01L2924/15153 , H01L2924/1517 , H01L2924/16195 , H01L2924/16315 , H01L2924/181 , H01L2924/19041 , H01L2924/00 , H01L2224/45099
摘要： Device packages often include walls build on a heat sink that surrounds a device die that thermally interacts with the heat sink. Use of raised or depressed feature on said heat sink that contacts the walls improves the cohesiveness of the package. By appropriately positioning these features contaminant infusion into the package is improved without degrading cohesiveness.
摘要翻译： 设备包通常包括围绕与散热器热相互作用的设备管芯的散热器上的壁。 在所述散热器上使用与壁接触的凸起或凹陷特征改善了包装的内聚性。 通过适当地定位这些特征，可以改善污染物输入到包装中而不降低粘结性。
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公开(公告)号：US20060131707A1
公开(公告)日：2006-06-22
申请号：US11015534
申请日：2004-12-18
申请人： Patrick Carberry , Jeffery Gilbert , George Libricz , Ralph Moyer , John Osenbach , Hugo Safar , Thomas Shilling
发明人： Patrick Carberry , Jeffery Gilbert , George Libricz , Ralph Moyer , John Osenbach , Hugo Safar , Thomas Shilling
IPC分类号： H01L23/495
CPC分类号： H01L23/49548 , H01L23/4334 , H01L23/49541 , H01L23/49861 , H01L24/48 , H01L2224/48091 , H01L2224/48247 , H01L2924/00014 , H01L2924/01322 , H01L2924/13091 , H01L2924/14 , H01L2924/16195 , H01L2924/19041 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device package comprises a container including a base and sidewalls. The base is configured to support a semiconductor device chip, and a lead frame extends through at least one of the sidewalls. A portion of the lead frame within the sidewall has at least one aperture penetrating into the lead frame. The sidewall material extends into the aperture, thereby forming a strong interfacial bond that provides a low leakage, sidewall-lead-frame interface. The base has a reentrant feature that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby forming a low leakage-base-sidewall interface. The top surface of the base has a groove that is positioned within the thickness of at least one of the sidewalls and engages the at least one sidewall, thereby enhancing the low leakage base-sidewall interface.
摘要翻译： 半导体器件封装包括包括基底和侧壁的容器。 基座被配置为支撑半导体器件芯片，并且引线框架延伸穿过至少一个侧壁。 引导框架在侧壁内的一部分具有穿透引线框架的至少一个孔。 侧壁材料延伸到孔中，从而形成强界面结合，其提供低泄漏侧壁引线框架界面。 底座具有位于至少一个侧壁的厚度内的折入特征，并与至少一个侧壁接合，从而形成低泄漏基底 - 侧壁界面。 基座的顶表面具有凹槽，该凹槽位于至少一个侧壁的厚度内并与至少一个侧壁接合，由此增强了低泄漏的底壁 - 侧壁界面。
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公开(公告)号：US20140103213A1
公开(公告)日：2014-04-17
申请号：US13653630
申请日：2012-10-17
申请人： Ashok J. Maliakal , Brijesh Vyas , Hugo Safar
发明人： Ashok J. Maliakal , Brijesh Vyas , Hugo Safar
CPC分类号： G02B6/10 , G01N21/7703 , G01N2021/7709 , G01N2021/7783 , G02B6/122 , G02B2006/12035
摘要： A chemical sensor is provided. The sensor includes at least one lightguiding element having an optical core. The lightguiding element comprises a layer of graphene situated in sufficient proximity to the core to exhibit evanescent wave absorption of optical energy in at least one optical mode guided in the core.
摘要翻译： 提供化学传感器。 传感器包括至少一个具有光学芯的光导元件。 光导元件包括位于芯附近的石墨烯层，以在芯中引导的至少一种光学模式中呈现光能的ev逝波吸收。
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公开(公告)号：US20120274183A1
公开(公告)日：2012-11-01
申请号：US13549676
申请日：2012-07-16
IPC分类号： H01L41/053
CPC分类号： H01L41/0533 , H03H9/02086 , H03H9/02102 , H03H9/02133 , H03H9/02149 , H03H9/0557 , H03H9/1007 , H03H9/105 , H03H9/175
摘要： A bulk acoustic wave resonator structure that isolates the core resonator from both environmental effects and aging effects. The structure has a piezoelectric layer at least partially disposed between two electrodes. The structure is protected against contamination, package leaks, and changes to the piezoelectric material due to external effects while still providing inertial resistance. The structure has one or more protective elements that limit aging effects to at or below a specified threshold. The resonator behavior is stabilized across the entire bandwidth of the resonance, not just at the series resonance. Examples of protective elements include a collar of material around the core resonator so that perimeter and edge-related environmental and aging phenomena are kept away from the core resonator, a Bragg reflector formed above or below the piezoelectric layer and a cap formed over the piezoelectric layer.
摘要翻译： 一种将核心谐振器与环境效应和老化效应隔离的体声波谐振器结构。 该结构具有至少部分地设置在两个电极之间的压电层。 该结构可以防止污染，封装泄漏以及由于外部效应而改变压电材料，同时仍然提供惯性阻力。 该结构具有一个或多个将老化效应限制在等于或低于特定阈值的保护元件。 谐振器的行为在谐振的整个带宽上是稳定的，而不仅仅是串联谐振。 保护元件的示例包括围绕芯谐振器的材料环，使得周边和边缘相关的环境和老化现象远离芯谐振器，形成在压电层上方或下方的布拉格反射器和形成在压电层上的盖 。
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