摘要:
A semiconductor device has a vertically offset BOT interconnect structure. The vertical offset is achieved by forming different height first and second conductive layer above a substrate. A first patterned photoresist layer is formed over the substrate. A first conductive layer is formed in the first patterned photoresist layer. The first patterned photoresist layer is removed. A second patterned photoresist layer is formed over the substrate. A second conductive layer is formed in the second patterned photoresist layer. The height of the second conductive layer, for example 25 micrometers, is greater than the height of the first conductive layer which is 5 micrometers. The first and second conductive layers are interposed between each other close together to minimize pitch and increase I/O count while maintaining sufficient spacing to avoid electrical shorting after bump formation. An interconnect structure is formed over the first and second conductive layers.
摘要:
A semiconductor device has a semiconductor wafer with a plurality of semiconductor die separated by a non-active region. The semiconductor die can be circular or polygonal with three or more sides. A plurality of bumps is formed over the semiconductor die. A portion of semiconductor wafer is removed to thin the semiconductor wafer. A wafer ring is mounted to mounting tape. The semiconductor wafer is mounted to the mounting tape within the wafer ring. The mounting tape includes translucent or transparent material. A penetrable layer is applied over the bumps formed over the semiconductor wafer. An irradiated energy from a laser is applied through the mounting tape to the non-active region to form a modified region within the non-active region. The semiconductor wafer is singulated along the modified region to separate the semiconductor die.
摘要:
A semiconductor package has a semiconductor die disposed on a substrate. A bond wire is connected between a first bonding site on the semiconductor die and a second bonding site on the substrate. The first bonding site is a die bond pad; the second bonding site is a stitch bond. The second bonding site has a bond finger formed on the substrate, a conductive layer in direct physical contact with the bond finger, and a bond stud coupled to the bond wire and in direct physical contact with the conductive layer to conduct an electrical signal from the semiconductor die to the bond finger. The bond finger is made of copper. The conductive layer is made of copper or gold. The bond stud is made of gold and overlies a side portion and top portion of the copper layer.
摘要:
A semiconductor device has a build-up interconnect structure formed over an active surface of a semiconductor wafer containing a plurality of semiconductor die separated by a saw street. An insulating layer is formed over the interconnect structure. Bumps are formed over the interconnect structure. A protective coating material is deposited over the insulating layer and saw street. A lamination tape is applied over the coating material. A portion of a back surface of the semiconductor wafer is removed. A mounting tape is applied over the back surface. The lamination tape is removed while leaving the coating material over the insulating layer and saw street. A first channel is formed through the saw street extending partially through the semiconductor wafer. The coating material is removed after forming the first channel. A second channel is formed through the saw street and the mounting tape is removed to singulate the semiconductor wafer.
摘要:
A method of making a semiconductor device includes providing a substrate, and forming a first conductive layer over the substrate. A patterned layer is formed over the first conductive layer. A second conductive layer is formed in the patterned layer. A height of the second conductive layer is greater than a height of the first conductive layer. The patterned layer is removed. A first bump and a second bump are formed over the first and second conductive layers, respectively, wherein the second bump overlaps the first bump, and wherein an uppermost surface of the second bump is vertically offset from an uppermost surface of the first bump. Bond wires are formed on the first and second bumps. The bond wires are arranged in a straight configuration. Lowermost surfaces of the first conductive layer and second conductive layer are substantially coplanar.
摘要:
A semiconductor package has a semiconductor die disposed on a substrate. A bond wire is connected between a first bonding site on the semiconductor die and a second bonding site on the substrate. The first bonding site is a die bond pad; the second bonding site is a stitch bond. The second bonding site has a bond finger formed on the substrate, a conductive layer in direct physical contact with the bond finger, and a bond stud coupled to the bond wire and in direct physical contact with the conductive layer to conduct an electrical signal from the semiconductor die to the bond finger. The bond finger is made of copper. The conductive layer is made of copper or gold. The bond stud is made of gold and overlies a side portion and top portion of the copper layer.
摘要:
A semiconductor device has a semiconductor wafer with a plurality of semiconductor die separated by a non-active region. The semiconductor die can be circular or polygonal with three or more sides. A plurality of bumps is formed over the semiconductor die. A portion of semiconductor wafer is removed to thin the semiconductor wafer. A wafer ring is mounted to mounting tape. The semiconductor wafer is mounted to the mounting tape within the wafer ring. The mounting tape includes translucent or transparent material. A penetrable layer is applied over the bumps formed over the semiconductor wafer. An irradiated energy from a laser is applied through the mounting tape to the non-active region to form a modified region within the non-active region. The semiconductor wafer is singulated along the modified region to separate the semiconductor die.
摘要:
A method of making a semiconductor device includes providing a substrate, and forming a first conductive layer over the substrate. A patterned layer is formed over the first conductive layer. A second conductive layer is formed in the patterned layer. A height of the second conductive layer is greater than a height of the first conductive layer. The patterned layer is removed. A first bump and a second bump are formed over the first and second conductive layers, respectively, wherein the second bump overlaps the first bump, and wherein an uppermost surface of the second bump is vertically offset from an uppermost surface of the first bump. Bond wires are formed on the first and second bumps. The bond wires are arranged in a straight configuration. Lowermost surfaces of the first conductive layer and second conductive layer are substantially coplanar.
摘要:
A semiconductor device has a vertically offset BOT interconnect structure. The vertical offset is achieved with a leadframe having a plurality of lead fingers around a die paddle. A first conductive layer is formed over the lead fingers. A second conductive layer is formed over the lead fingers. Each second conductive layer is positioned adjacent to the first conductive layer and each first conductive layer is positioned adjacent to the second conductive layer. The second conductive layer has a height greater than a height of the first conductive layer. The first and second conductive layers can have a side-by-side arrangement or staggered arrangement. Bumps are formed over the first and second conductive layers. Bond wires are electrically connected to the bumps. A semiconductor die is mounted over the die paddle of the leadframe and electrically connected to the bond wires and BOT interconnect structure.
摘要:
A semiconductor device has a vertically offset BOT interconnect structure. The vertical offset is achieved with a leadframe having a plurality of lead fingers around a die paddle. A first conductive layer is formed over the lead fingers. A second conductive layer is formed over the lead fingers. Each second conductive layer is positioned adjacent to the first conductive layer and each first conductive layer is positioned adjacent to the second conductive layer. The second conductive layer has a height greater than a height of the first conductive layer. The first and second conductive layers can have a side-by-side arrangement or staggered arrangement. Bumps are formed over the first and second conductive layers. Bond wires are electrically connected to the bumps. A semiconductor die is mounted over the die paddle of the leadframe and electrically connected to the bond wires and BOT interconnect structure.