Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate
    1.
    发明授权
    Method of manufacturing a semiconductor structure and separating the semiconductor from a substrate 有权
    制造半导体结构并将半导体与衬底分离的方法

    公开(公告)号:US08664087B2

    公开(公告)日:2014-03-04

    申请号:US13310342

    申请日:2011-12-02

    IPC分类号: H01L21/30 H01L21/46

    摘要: A method of manufacturing a semiconductor structure is disclosed, which includes providing a substrate comprising a bottom surface and a growth surface opposite to the bottom surface; forming a buffer layer comprising a first surface which is not a C-plane substantially parallel with the bottom surface on the growth surface; forming a semiconductor structure on the buffer layer; forming at least one cavity in the buffer layer; extending the cavity along a main extending direction; separating the substrate and the semiconductor structure; wherein the main extending direction is substantially not parallel with the normal direction of the first surface.

    摘要翻译: 公开了一种制造半导体结构的方法,其包括提供包括底表面和与底表面相对的生长表面的基底; 形成缓冲层,所述缓冲层包括第一表面,所述第一表面不是与生长表面上的底表面基本平行的C平面; 在缓冲层上形成半导体结构; 在所述缓冲层中形成至少一个空腔; 沿着主延伸方向延伸空腔; 分离衬底和半导体结构; 其中所述主延伸方向基本上不与所述第一表面的法线方向平行。

    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE
    3.
    发明申请
    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE 有权
    制造半导体结构的方法

    公开(公告)号:US20120142142A1

    公开(公告)日:2012-06-07

    申请号:US13310342

    申请日:2011-12-02

    IPC分类号: H01L21/20

    摘要: A method of manufacturing a semiconductor structure is disclosed, which includes providing a substrate comprising a bottom surface and a growth surface opposite to the bottom surface; forming a buffer layer comprising a first surface which is not a C-plane substantially parallel with the bottom surface on the growth surface; forming a semiconductor structure on the buffer layer; forming at least one cavity in the buffer layer; extending the cavity along a main extending direction; separating the substrate and the semiconductor structure; wherein the main extending direction is substantially not parallel with the normal direction of the first surface.

    摘要翻译: 公开了一种制造半导体结构的方法,其包括提供包括底表面和与底表面相对的生长表面的基底; 形成缓冲层,所述缓冲层包括第一表面,所述第一表面不是与生长表面上的底表面基本平行的C平面; 在缓冲层上形成半导体结构; 在所述缓冲层中形成至少一个空腔; 沿着主延伸方向延伸空腔; 分离衬底和半导体结构; 其中所述主延伸方向基本上不与所述第一表面的法线方向平行。

    NON-INVASIVE APPARATUS AND METHOD FOR MEASURING HUMAN METABOLIC CONDITIONS
    4.
    发明申请
    NON-INVASIVE APPARATUS AND METHOD FOR MEASURING HUMAN METABOLIC CONDITIONS 有权
    非侵入性设备和衡量人类代谢条件的方法

    公开(公告)号:US20120209092A1

    公开(公告)日:2012-08-16

    申请号:US13028359

    申请日:2011-02-16

    IPC分类号: A61B5/1468

    摘要: In a non-invasive human metabolic condition measuring apparatus and method, a micro-light source emits an incident light having a wavelength from 329 nm to 473 nm to trigger a mitochondrial metabolite of a human mucosa tissue, and the metabolite is excited to generate a fluorescent signal having a wavelength from 405 nm to 572 nm, and the fluorescent signal is filtered by an optical filter, received by a micro receiver, and amplified by an amplification circuit sequentially, and then a filter circuit and an analog/digital conversion circuit of a microprocessing unit are provided for filtering and performing an analog/digital signal conversion respectively, so that the metabolite content can be calculated by the computation to provide human metabolic conditions, and a combination of micro components and circuits is used for miniaturizing the apparatus to provide a convenient carry of the apparatus.

    摘要翻译: 在非侵入性人体代谢状态测量装置和方法中,微光源发射波长为329nm至473nm的入射光,以触发人体粘膜组织的线粒体代谢物,并且代谢物被激发以产生 荧光信号由405nm到572nm波长的荧光信号进行滤波,并且由微型接收器接收的光滤波器进行滤波,并依次由放大电路放大,然后滤波电路和模拟/数字转换电路 提供了一种微处理单元,用于分别过滤和执行模拟/数字信号转换,从而可以通过计算来计算代谢物含量以提供人体代谢条件,并且使用微组件和电路的组合来使装置小型化以提供 方便携带的装置。