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    Semiconductor memory device and access method thereof
    3.
    发明授权
    Semiconductor memory device and access method thereof 有权
    半导体存储器件及其访问方法

    公开(公告)号：US08125847B2

    公开(公告)日：2012-02-28

    申请号：US12385121

    申请日：2009-03-31

    申请人： Dae-Hyun Kim ,  Kwang-il Park ,  Kyoung-Ho Kim ,  Hyun-Jin Kim ,  Hye-Ran Kim

    发明人： Dae-Hyun Kim ,  Kwang-il Park ,  Kyoung-Ho Kim ,  Hyun-Jin Kim ,  Hye-Ran Kim

    IPC分类号： G11C8/00 ,  G11C8/18

    CPC分类号： G11C8/18 ,  G11C7/08 ,  G11C8/12 ,  G11C11/4076 ,  G11C11/4091

    摘要： Example embodiments provide a semiconductor memory device that may include: a cell array arranged in pluralities of rows and columns; and a sense amplifier conducting writing and reading operations to the cell array in response to writing and reading commands in correspondence with an access time, which may be variable in period. The sense amplifier adjusts pulse widths of write-in and read-out data in accordance with a period of the access time.

    摘要翻译： 示例性实施例提供半导体存储器件，其可以包括：布置成多行和列的单元阵列; 以及响应于写入和读取对应于在周期可变的访问时间的访问时间，对单元阵列执行写入和读取操作的读出放大器。 读出放大器根据访问时间的周期来调整写入和读出数据的脉冲宽度。

    SYMBOL LOCK METHOD AND A MEMORY SYSTEM USING THE SAME
    5.
    发明申请
    SYMBOL LOCK METHOD AND A MEMORY SYSTEM USING THE SAME 有权
    符号锁定方法和使用该记录系统的记忆系统

    公开(公告)号：US20160103620A1

    公开(公告)日：2016-04-14

    申请号：US14879618

    申请日：2015-10-09

    申请人： HYE-RAN KIM ,  TAE-YOUNG OH

    发明人： HYE-RAN KIM ,  TAE-YOUNG OH

    IPC分类号： G06F3/06

    CPC分类号： G06F13/4243

    摘要： A memory system includes a transmitter and a receiver. The transmitter is configured to transmit a data signal corresponding to a first symbol lock pattern and a data burst via an interface. The data burst includes a first data and a subsequent data. The receiver is configured to receive the data signal, to detect the first symbol lock pattern based on the received data signal, and to find the first data of the data burst according to the detected first symbol lock pattern.

    摘要翻译： 存储器系统包括发射器和接收器。 发射机被配置为经由接口发送对应于第一符号锁定模式和数据突发的数据信号。 数据脉冲串包括第一数据和后续数据。 接收器被配置为接收数据信号，以基于接收到的数据信号检测第一符号锁定模式，并根据检测到的第一符号锁定模式找到数据突发的第一数据。

    SEMICONDUCTOR MEMORY DEVICE AND ACCESS METHOD THEREOF
    6.
    发明申请
    SEMICONDUCTOR MEMORY DEVICE AND ACCESS METHOD THEREOF 有权
    半导体存储器件及其访问方法

    公开(公告)号：US20120127810A1

    公开(公告)日：2012-05-24

    申请号：US13360093

    申请日：2012-01-27

    申请人： Dae-Hyun Kim ,  Kwang-il Park ,  Kyoung-Ho Kim ,  Hyun-Jin Kim ,  Hye-Ran Kim

    发明人： Dae-Hyun Kim ,  Kwang-il Park ,  Kyoung-Ho Kim ,  Hyun-Jin Kim ,  Hye-Ran Kim

    IPC分类号： G11C8/18 ,  G11C7/00

    CPC分类号： G11C8/18 ,  G11C7/08 ,  G11C8/12 ,  G11C11/4076 ,  G11C11/4091

    摘要： Example embodiments provide a semiconductor memory device that may include: a cell array arranged in pluralities of rows and columns; and a sense amplifier conducting writing and reading operations to the cell array in response to writing and reading commands in correspondence with an access time, which may be variable in period. The sense amplifier adjusts pulse widths of write-in and read-out data in accordance with a period of the access time.

    摘要翻译： 示例性实施例提供半导体存储器件，其可以包括：布置成多行和列的单元阵列; 以及响应于写入和读取对应于在周期可变的访问时间的访问时间，对单元阵列执行写入和读取操作的读出放大器。 读出放大器根据访问时间的周期来调整写入和读出数据的脉冲宽度。

    Device supporting mobile internet protocol version 6 (Mobile IPv6)
    7.
    发明申请
    Device supporting mobile internet protocol version 6 (Mobile IPv6) 审中-公开
    支持移动互联网协议版本6（移动IPv6）的设备

    公开(公告)号：US20070160064A1

    公开(公告)日：2007-07-12

    申请号：US11645636

    申请日：2006-12-27

    申请人： Dae-Hyung Kwon ,  Kang-Young Moon ,  Hye-Sook Lim ,  Hye-Ran Kim ,  Sun-Gi Kim ,  Ju-Hyoung Mun ,  Won-Jung Kim ,  Suh-Young Jhee ,  Ha-Neul Chu

    发明人： Dae-Hyung Kwon ,  Kang-Young Moon ,  Hye-Sook Lim ,  Hye-Ran Kim ,  Sun-Gi Kim ,  Ju-Hyoung Mun ,  Won-Jung Kim ,  Suh-Young Jhee ,  Ha-Neul Chu

    IPC分类号： H04L12/28

    CPC分类号： H04W80/04 ,  H04L69/12

    摘要： A device supporting Mobile Internet Protocol version 6 (IPv6) includes: a mobile reception processor outputting home addresses of a mobile node and a correspondent node or mobility relevant header information according to whether a received packet is a Binding packet or a data packet; a binding cache storing Binding information that the mobile node has received; a binding update list storing Binding information that the mobile node has transmitted; a binding receiver receiving a Binding message that the correspondent node has created, receiving information on the home addresses of the mobile node and the correspondent node from the mobile reception processor, and providing information related to the Binding message to the binding cache and the binding update list; a binding transmitter receiving a request for creation of the Binding message, combining data using a calculated checksum, and creating and outputting a requested Binding message; and a mobile transmission processor determining a type of a header for Binding Update or Binding Acknowledgment through a Care-of Address (CoA) obtained by retrieving at least one of the binding cache and the binding update list, and creating and outputting a Mobile IPv6 header using the home addresses of the mobile node and the correspondent node received from the binding transmitter.

    摘要翻译： 支持移动互联网协议版本6（IPv6）的设备包括：移动接收处理器，根据所接收的分组是绑定分组还是数据分组，输出移动节点和对端节点的归属地址或移动性相关的头信息; 存储移动节点已经接收的绑定信息的绑定高速缓存; 存储移动节点发送的绑定信息的绑定更新列表; 接收对方节点已经创建的绑定消息的绑定接收者，从移动接收处理器接收关于移动节点和通信节点的归属地址的信息，并将与绑定消息相关的信息提供给绑定高速缓存和绑定更新 名单 接收用于创建绑定消息的请求的绑定发送器，使用计算的校验和组合数据，以及创建并输出所请求的绑定消息; 以及移动传输处理器，其通过通过检索绑定高速缓存和绑定更新列表中的至少一个获得的转交地址（CoA）来确定用于绑定更新或绑定确认的报头的类型，以及创建和输出移动IPv6报头 使用移动节点的归属地址和从绑定发射机接收到的通信节点。

    Semiconductor memory device and access method thereof
    10.
    发明申请
    Semiconductor memory device and access method thereof 有权
    半导体存储器件及其访问方法

    公开(公告)号：US20090268528A1

    公开(公告)日：2009-10-29

    申请号：US12385121

    申请日：2009-03-31

    申请人： Dae-Hyun Kim ,  Kwang-il Park ,  Kyoung-Ho Kim ,  Hyun-Jin Kim ,  Hye-Ran Kim

    发明人： Dae-Hyun Kim ,  Kwang-il Park ,  Kyoung-Ho Kim ,  Hyun-Jin Kim ,  Hye-Ran Kim

    IPC分类号： G11C7/00 ,  G11C8/00

    CPC分类号： G11C8/18 ,  G11C7/08 ,  G11C8/12 ,  G11C11/4076 ,  G11C11/4091

    摘要： Example embodiments provide a semiconductor memory device that may include: a cell array arranged in pluralities of rows and columns; and a sense amplifier conducting writing and reading operations to the cell array in response to writing and reading commands in correspondence with an access time, which may be variable in period. The sense amplifier adjusts pulse widths of write-in and read-out data in accordance with a period of the access time.

    摘要翻译： 示例性实施例提供半导体存储器件，其可以包括：布置成多行和列的单元阵列; 以及响应于写入和读取对应于在周期可变的访问时间的访问时间，对单元阵列执行写入和读取操作的读出放大器。 读出放大器根据访问时间的周期来调整写入和读出数据的脉冲宽度。