公开(公告)号：US09444016B2

公开(公告)日：2016-09-13

申请号：US13462044

申请日：2012-05-02

申请人： Ho Sang Kwack ,  Hyun Soo Lim ,  Ju Hyon Song ,  Hyun Kyong Cho ,  Ho Ki Kwon

发明人： Ho Sang Kwack ,  Hyun Soo Lim ,  Ju Hyon Song ,  Hyun Kyong Cho ,  Ho Ki Kwon

IPC分类号： H01L33/46 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/405 ,  H01L33/0079 ,  H01L33/46 ,  H01L2224/48091 ,  H01L2924/00014

摘要： Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device comprises a reflective layer, a second conductive type semiconductor layer on the reflective layer, an active layer on the second conductive type semiconductor layer, a first conductive type semiconductor layer on the active layer, and a pad electrode on the first conductive type semiconductor layer. The reflective layer comprises a predetermined pattern.

摘要翻译： 提供了一种发光器件，发光器件封装和照明系统。 发光器件包括反射层，反射层上的第二导电类型半导体层，第二导电类型半导体层上的有源层，有源层上的第一导电类型半导体层，以及第一导电类型上的焊盘电极 型半导体层。 反射层包括预定图案。

公开(公告)号：US08823029B2

公开(公告)日：2014-09-02

申请号：US13240927

申请日：2011-09-22

申请人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

发明人： Sun Kyung Kim ,  Jin Wook Lee ,  Hyun Kyong Cho

IPC分类号： H01L33/22 ,  H01L33/20

CPC分类号： H01L33/20 ,  H01L33/22 ,  H01L2933/0083

摘要： Provided are a light emitting device and a method of manufacturing the same. A light emitting device includes an active layer; a first conductive semiconductor layer on the active layer; a second conductive semiconductor layer on the active layer so that the active layer is disposed between the first and second conductive semiconductor layers; and a photonic crystal structure comprising a first light extraction pattern on the first conductive semiconductor layer having a first period, and second light extraction pattern on the first conductive semiconductor layer having a second period, the first period being greater than λ/n, and the second period being identical to or smaller than λ/n, where n is a refractive index of the first conductive semiconductor layer, and λ is a wavelength of light emitted from the active layer.

摘要翻译： 提供一种发光器件及其制造方法。 发光器件包括有源层; 在所述有源层上的第一导电半导体层; 在所述有源层上的第二导电半导体层，使得所述有源层设置在所述第一和第二导电半导体层之间; 以及光子晶体结构，其包括具有第一周期的所述第一导电半导体层上的第一光提取图案，以及在所述第一导电半导体层上具有第二周期的第二光提取图案，所述第一周期大于λ/ n， 第二周期等于或小于λ/ n，其中n是第一导电半导体层的折射率，λ是从有源层发射的光的波长。

公开(公告)号：US08796698B2

公开(公告)日：2014-08-05

申请号：US11638406

申请日：2006-12-14

申请人： Jong Wook Kim ,  Hyun Kyong Cho

发明人： Jong Wook Kim ,  Hyun Kyong Cho

IPC分类号： H01L21/00 ,  H01L33/00

CPC分类号： H01L33/0079 ,  H01L33/007 ,  H01L33/22

摘要： A method of fabricating a substrate with nano structures, light emitting device using the substrate and a manufacturing method thereof, wherein a substrate for growing a light emitting device is formed with nano agglomerations, and the substrate is etched by using the agglomerations as a mask to allow nano structures to be formed on the substrate, thereby enabling to grow a crystal defect-reduced, reliability-improved, good quality light emitting structure, and wherein the light emitting structure is formed with nano structures to enhance the light extraction efficiency.

摘要翻译： 一种制造具有纳米结构的衬底的方法，使用该衬底的发光器件及其制造方法，其中用于生长发光器件的衬底由纳米结块形成，并且通过使用该聚集体作为掩模蚀刻该衬底， 允许在衬底上形成纳米结构，从而能够生长晶体缺陷降低，可靠性提高的优质发光结构，并且其中发光结构由纳米结构形成以增强光提取效率。

公开(公告)号：US20140117400A1

公开(公告)日：2014-05-01

申请号：US14150373

申请日：2014-01-08

申请人： Jeong Hyeon CHOI ,  Hyun Kyong CHO ,  Bock Kee MIN

发明人： Jeong Hyeon CHOI ,  Hyun Kyong CHO ,  Bock Kee MIN

IPC分类号： H01L33/62 ,  H01L33/64 ,  H01L33/60

CPC分类号： H01L33/60 ,  H01L33/10 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L33/62 ,  H01L33/64 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2933/0016 ,  H01L2924/00014

摘要： A light emitting device may be provided that includes a conductive support member, a first conductive layer, a second conductive layer, an insulation layer between the first conductive layer and the second conductive layer, and a light emitting structure that includes a second semiconductor layer on the second conductive layer, a first semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer. The first conductive layer may include at least one conductive via that passes through the second conductive layer, the second semiconductor layer and the active layer. A top surface of the at least one conductive via is provided into the first semiconductor layer. The insulation layer may substantially surround a side wall of the conductive via.

公开(公告)号：US08669586B2

公开(公告)日：2014-03-11

申请号：US12908710

申请日：2010-10-20

申请人： Sung Min Hwang ,  Hyun Kyong Cho

发明人： Sung Min Hwang ,  Hyun Kyong Cho

IPC分类号： H01L33/00

CPC分类号： H01L33/145 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/382 ,  H01L33/44 ,  H01L2224/48091 ,  H01L2924/00014

摘要： A light emitting device includes a first electrode, a first semiconductor layer, an active layer; a second semiconductor layer, and a second electrode. A current blocking layer is formed on a side surface of and has a width provided within the first semiconductor layer. The thickness and width of the current blocking layer is smaller than the thickness and width of the first semiconductor layer.

摘要翻译： 发光器件包括第一电极，第一半导体层，有源层; 第二半导体层和第二电极。 电流阻挡层形成在第一半导体层的侧表面上并具有宽度。 电流阻挡层的厚度和宽度小于第一半导体层的厚度和宽度。

公开(公告)号：US08648376B2

公开(公告)日：2014-02-11

申请号：US13612343

申请日：2012-09-12

申请人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Jun Ho Jang

发明人： Hyun Kyong Cho ,  Sun Kyung Kim ,  Jun Ho Jang

IPC分类号： H01L33/02 ,  H01L33/10

CPC分类号： H01L33/20 ,  H01L33/0079 ,  H01L33/22 ,  H01L33/405 ,  H01L33/42 ,  H01L33/44 ,  H01L33/48 ,  H01L33/60 ,  H01L33/62 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48257 ,  H01L2224/48465 ,  H01L2224/73265 ,  H01L2933/0016 ,  H01L2933/0033 ,  H01L2933/0083 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00

摘要： A nitride-based light emitting device capable of achieving an enhancement in emission efficiency and an enhancement in reliability is disclosed. The light emitting device includes a semiconductor layer, and a light extracting layer arranged on the semiconductor layer and made of a material having a refractive index equal to or higher than a reflective index of the semiconductor layer.

摘要翻译： 公开了一种能够实现发光效率提高和可靠性提高的氮化物系发光器件。 发光器件包括半导体层和布置在半导体层上并由折射率等于或高于半导体层的反射率的材料制成的光提取层。

公开(公告)号：US08598607B2

公开(公告)日：2013-12-03

申请号：US12731029

申请日：2010-03-24

申请人： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

发明人： Jong Wook Kim ,  Hyun Kyong Cho ,  Gyu Chul Yi ,  Sung Jin An ,  Jin Kyoung Yoo ,  Young Joon Hong

IPC分类号： H01L33/22

CPC分类号： H01L33/22 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L33/32 ,  H01L33/36 ,  H01L33/60

摘要： A light emitting device and a method of manufacturing the same are disclosed. The light emitting device includes a buffer layer formed on a substrate, a nitride semiconductor layer including a first semiconductor layer, an active layer, and a second semiconductor layer, which are sequentially stacked on the buffer layer, a portion of the first semiconductor layer being exposed to the outside by performing mesa etching from the second semiconductor layer to the portion of the first semiconductor layer, and at least one nanocone formed on the second semiconductor layer.

摘要翻译： 公开了一种发光器件及其制造方法。 发光器件包括形成在衬底上的缓冲层，依次层叠在缓冲层上的包括第一半导体层，有源层和第二半导体层的氮化物半导体层，第一半导体层的一部分为 通过从第二半导体层到第一半导体层的部分进行台面蚀刻，以及形成在第二半导体层上的至少一个纳米体，暴露于外部。

公开(公告)号：US20130009198A1

公开(公告)日：2013-01-10

申请号：US13618952

申请日：2012-09-14

申请人： SUNG MIN HWANG ,  HYUN KYONG CHO ,  GYEONG GEUN PARK

发明人： SUNG MIN HWANG ,  HYUN KYONG CHO ,  GYEONG GEUN PARK

IPC分类号： H01L33/36

CPC分类号： H01L33/145 ,  H01L33/60

摘要： A light emitting device according to an embodiment includes a second electrode layer comprising at least one projection part; at least one current blocking layer on the projection part of the second electrode layer; a second conductive type semiconductor layer on the second electrode layer and the current blocking layer; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the current blocking layer in a vertical direction.

摘要翻译： 根据实施例的发光器件包括包括至少一个突出部分的第二电极层; 在所述第二电极层的所述突起部分上的至少一个电流阻挡层; 在第二电极层和电流阻挡层上的第二导电型半导体层; 在第二导电类型半导体层上的有源层; 在所述有源层上的第一导电类型半导体层; 以及在所述第一导电型半导体层上的第一电极层，所述第一电极层的至少一部分在垂直方向对应于所述电流阻挡层。

公开(公告)号：US08288786B2

公开(公告)日：2012-10-16

申请号：US12614240

申请日：2009-11-06

申请人： Sung Min Hwang ,  Hyun Kyong Cho ,  Gyeong Geun Park

发明人： Sung Min Hwang ,  Hyun Kyong Cho ,  Gyeong Geun Park

IPC分类号： H01L33/00 ,  H01L21/00

CPC分类号： H01L33/145 ,  H01L33/60

摘要： A light emitting device according to an embodiment includes a second electrode layer comprising at least one projection part; at least one current blocking layer on the projection part of the second electrode layer; a second conductive type semiconductor layer on the second electrode layer and the current blocking layer; an active layer on the second conductive type semiconductor layer; a first conductive type semiconductor layer on the active layer; and a first electrode layer on the first conductive type semiconductor layer, at least a portion of the first electrode layer corresponding with the current blocking layer in a vertical direction.

摘要翻译： 根据实施例的发光器件包括包括至少一个突出部分的第二电极层; 在所述第二电极层的所述突起部分上的至少一个电流阻挡层; 在第二电极层和电流阻挡层上的第二导电型半导体层; 在第二导电类型半导体层上的有源层; 在所述有源层上的第一导电类型半导体层; 以及在所述第一导电型半导体层上的第一电极层，所述第一电极层的至少一部分在垂直方向对应于所述电流阻挡层。

公开(公告)号：US20120175632A1

公开(公告)日：2012-07-12

申请号：US13423747

申请日：2012-03-19

申请人： Hyun Kyong CHO ,  Sun Kyung Kim ,  Gyeong Geun Park

发明人： Hyun Kyong CHO ,  Sun Kyung Kim ,  Gyeong Geun Park

IPC分类号： H01L33/32

CPC分类号： H01L33/20 ,  H01L2933/0083

摘要： The light emitting device, and corresponding method of manufacture, the light emitting device including a second electrode layer; a second conductive type semiconductor layer formed on the second electrode layer; an active layer formed on the second conductive type semiconductor layer; a first conductive type semiconductor layer formed with a first photonic crystal that includes a mask layer and an air gap formed on the active layer; and a first electrode layer formed on the first conductive type semiconductor layer.

摘要翻译： 发光器件和相应的制造方法，所述发光器件包括第二电极层; 形成在所述第二电极层上的第二导电类型半导体层; 形成在所述第二导电类型半导体层上的有源层; 形成有第一光子晶体的第一导电型半导体层，其包括形成在所述有源层上的掩模层和气隙; 以及形成在所述第一导电类型半导体层上的第一电极层。