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    STORAGE CAPACITORS FOR SEMICONDUCTOR DEVICES
    2.
    发明申请
    STORAGE CAPACITORS FOR SEMICONDUCTOR DEVICES 审中-公开
    半导体器件存储电容器

    公开(公告)号：US20080185624A1

    公开(公告)日：2008-08-07

    申请号：US12100042

    申请日：2008-04-09

    申请人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    发明人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    IPC分类号： H01L29/94

    CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/75

    摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening there through on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.

    摘要翻译： 形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模制氧化物层，选择性地去除部分 模制氧化物层以在接触塞上方形成凹陷，在凹陷的底表面和侧表面上形成钛层，在钛层上形成氮化钛层，并在氮化钛层上形成氮氧化钛层。 存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物 层在氮化钛层上。

    Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors
    4.
    发明授权
    Semiconductor devices having metal layers as barrier layers on upper or lower electrodes of capacitors 失效
    在电容器的上部或下部电极上具有金属层作为阻挡层的半导体器件

    公开(公告)号：US06590251B2

    公开(公告)日：2003-07-08

    申请号：US09911313

    申请日：2001-07-23

    申请人： Sang-bom Kang ,  Hyun-seok Lim ,  Yung-sook Chae ,  In-sang Jeon ,  Gil-heyun Choi

    发明人： Sang-bom Kang ,  Hyun-seok Lim ,  Yung-sook Chae ,  In-sang Jeon ,  Gil-heyun Choi

    IPC分类号： H01L27108

    CPC分类号： C23C16/34 ,  C23C16/45529 ,  C23C16/45531 ,  H01L21/28562 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76856 ,  H01L21/7687 ,  H01L28/75

    摘要： Semiconductor films include insulating films including contact holes in semiconductor substrates, capacitors comprising lower electrodes formed on conductive material films in the contact holes, high dielectric films formed on the lower electrodes and upper electrodes formed on the high dielectric films, and barrier metal layers positioned between conductive materials in the contact holes and the lower electrodes, the barrier metal layers including metal layers formed in A-B-N structures in which a plurality of atomic layers are stacked by alternatively depositing reactive metal (A), an amorphous combination element (B) for preventing crystallization of the reactive metal (A) and nitrogen (N). The composition ratios of the barrier metal layers are determined by the number of depositions of the atomic layers.

    摘要翻译： 半导体膜包括在半导体衬底中包括接触孔的绝缘膜，包括形成在接触孔中的导电材料膜上的下电极的电容器，形成在下电极上的高电介质膜和形成在高电介质膜上的上电极，以及位于 接触孔和下电极中的导电材料，阻挡金属层包括通过交替沉积反应性金属（A）而堆叠多个原子层的ABN结构中形成的金属层，用于防止结晶的非晶态组合元件（B） 的反应性金属（A）和氮（N）。 阻挡金属层的组成比由原子层的沉积数确定。

    Method of cleaning semiconductor device fabrication apparatus
    8.
    发明授权
    Method of cleaning semiconductor device fabrication apparatus 失效

    公开(公告)号：US07141512B2

    公开(公告)日：2006-11-28

    申请号：US10999183

    申请日：2004-11-30

    申请人： In-su Ha ,  Yoon-bon Koo ,  Hyun-seok Lim ,  Cheon-su Han ,  Seung-cheol Choi

    发明人： In-su Ha ,  Yoon-bon Koo ,  Hyun-seok Lim ,  Cheon-su Han ,  Seung-cheol Choi

    IPC分类号： H01L21/31 ,  H01L21/469

    CPC分类号： C23C16/4405 ,  B08B7/00 ,  Y10S438/905

    摘要： A semiconductor device fabrication apparatus is cleaned after a conductive layer is formed on a metal oxide layer of a substrate. The substrate is disposed on a heater in a process chamber of the apparatus, and the conductive layer is formed by introducing source gases into the chamber. Then the substrate is transferred out of the process chamber. At least one by-product of a reaction between the source gases and the metal oxide layer adheres to a surface inside the chamber, such as to a region or regions of the heater. Once the semiconductor substrate has been transferred outside the process chamber of the semiconductor fabrication apparatus, the by-product(s) is/are removed by evaporation. The by-product(s) can be evaporated using gas, such as one of the source gases, so that the process chamber can remain closed.

    Storage capacitors for semiconductor devices and methods of forming the same
    9.
    发明申请
    Storage capacitors for semiconductor devices and methods of forming the same 有权
    用于半导体器件的存储电容器及其形成方法

    公开(公告)号：US20060099760A1

    公开(公告)日：2006-05-11

    申请号：US11266520

    申请日：2005-11-03

    申请人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    发明人： Rak-Hwan Kim ,  Young-Joo Cho ,  Sung-Tae Kim ,  In-Sun Park ,  Hyeon-Deok Lee ,  Hyun-Suk Lee ,  Jung-Hee Chung ,  Hyun-Young Kim ,  Hyun-Seok Lim

    IPC分类号： H01L21/8242

    CPC分类号： H01L28/91 ,  H01L27/10817 ,  H01L27/10852 ,  H01L28/75

    摘要： Methods of forming a storage capacitor include forming an interlayer insulation layer having an opening therethrough on a semiconductor substrate, forming a contact plug in the opening, forming a molding oxide layer on the interlayer insulation layer and the contact plug, selectively removing portions of the molding oxide layer to form a recess above the contact plug, forming a titanium layer on a bottom surface and side surfaces of the recess, forming a titanium nitride layer on the titanium layer, and forming a titanium oxide nitride layer on the titanium nitride layer. A storage capacitor includes a semiconductor substrate, an interlayer insulation layer having a contact plug therein on the substrate, and a storage electrode on the contact plug including a titanium silicide layer, a titanium nitride layer on the titanium silicide layer, and a titanium oxide nitride layer on the titanium nitride layer.

    摘要翻译： 形成存储电容器的方法包括在半导体衬底上形成具有开口的层间绝缘层，在开口中形成接触插塞，在层间绝缘层和接触插塞上形成模压氧化层，选择性地去除模制件的部分 在接触塞上方形成凹部，在凹部的底面和侧面形成钛层，在钛层上形成氮化钛层，在氮化钛层上形成氮化钛层。 存储电容器包括半导体衬底，在衬底上具有接触插塞的层间绝缘层，以及包括钛硅化物层的接触插塞上的存储电极，硅化钛层上的氮化钛层和氧化钛氮化物 层在氮化钛层上。