公开(公告)号：US20120133778A1

公开(公告)日：2012-05-31

申请号：US13025326

申请日：2011-02-11

申请人： Ming-Yu SHIH ,  I-Wei Wu ,  Sung-Fei Yang ,  Chin-Chung Nien

发明人： Ming-Yu SHIH ,  I-Wei Wu ,  Sung-Fei Yang ,  Chin-Chung Nien

IPC分类号： G06K17/00 ,  H04N5/225

CPC分类号： H04N7/185 ,  G06T7/248 ,  G06T2207/10032 ,  G06T2207/20104 ,  G06T2207/30184

摘要： In one exemplary embodiment, an object region tracking and picturing module is constructed on a moving platform of a mobile end and a remote control module is constructed on anther platform for an image object region tracking system. The two modules communicate with each other via a digital network for delivering required information. The object region tracking and picturing module uses a real-time image backward search technology to store at least an image frame previously captured on the moving platform into a frame buffer, and start tracking an object region from the position pointed out by the remote control module to a newest image frame captured on the moving platform, then find out a relative position on the newest image frame for the tracked object region.

摘要翻译： 在一个示例性实施例中，在移动端的移动平台上构建对象区域跟踪和图形模块，并且在用于图像对象区域跟踪系统的另外的平台上构建远程控制模块。 两个模块通过数字网络相互通信，用于传递所需的信息。 对象区域跟踪和图形模块使用实时图像反向搜索技术将至少先前在移动平台上捕获的图像帧存储到帧缓冲器中，并且从远程控制模块指出的位置开始跟踪对象区域 到移动平台上捕获的最新图像帧，然后找出跟踪对象区域的最新图像帧上的相对位置。

公开(公告)号：US20080117879A1

公开(公告)日：2008-05-22

申请号：US11761377

申请日：2007-06-12

申请人： I-Wei Wu ,  Chun-Yun Hsieh ,  Jun-Lin Liu

发明人： I-Wei Wu ,  Chun-Yun Hsieh ,  Jun-Lin Liu

IPC分类号： H04Q7/00

CPC分类号： H04W36/36 ,  H04W36/08 ,  H04W36/30

摘要： A handoff method in a wireless local area network (WLAN) and an apparatus using the same are provided. A mobile station (MS) switches between a data transceiving mode and a probing mode at a predefined interval when the MS is transmitting/receiving packages. In the probing mode, the MS probes one or more channels each time and selects an access point (AP) for handoff from the probing result according to a predetermined rule, so as to re-establish a network connection.

摘要翻译： 提供了一种无线局域网（WLAN）中的切换方法及其使用方法。 当MS正在发送/接收包时，移动台（MS）以预定的间隔在数据收发模式和探测模式之间切换。 在探测模式下，MS每次探测一个或多个信道，并根据预定规则从探测结果中选择接入点（AP）进行切换，以便重新建立网络连接。

公开(公告)号：US20050146657A1

公开(公告)日：2005-07-07

申请号：US10907053

申请日：2005-03-18

申请人： Chi-Jain Wen ,  Dai-Liang Ting ,  Hsiao-Yi Lin ,  Gwo-Long Lin ,  I-Wei Wu

发明人： Chi-Jain Wen ,  Dai-Liang Ting ,  Hsiao-Yi Lin ,  Gwo-Long Lin ,  I-Wei Wu

IPC分类号： G02F1/1335 ,  G02F1/1362

CPC分类号： G02F1/133555 ,  G02F1/13624

摘要： A transflective liquid crystal display (LCD) includes at least a transmission pixel region and at least a reflection pixel region positioned in a pixel region. The transmission region includes at least a transmissive electrode connected to a first switching element. The reflection pixel region includes at least a reflective electrode connected to a second switching element. The transmissive and the reflective electrodes are controlled respectively by independent switching elements.

摘要翻译： 半透射型液晶显示器（LCD）至少包括透射像素区域和至少位于像素区域中的反射像素区域。 透射区域至少包括连接到第一开关元件的透射电极。 反射像素区域至少包括连接到第二开关元件的反射电极。 透射和反射电极分别由独立的开关元件控制。

公开(公告)号：US20050056838A1

公开(公告)日：2005-03-17

申请号：US10869210

申请日：2004-06-16

申请人： Yaw-Ming Tsai ,  Hsiu-Chun Hsieh ,  Shih-Chang Chang ,  Chen-Ting Huang ,  I-Wei Wu

发明人： Yaw-Ming Tsai ,  Hsiu-Chun Hsieh ,  Shih-Chang Chang ,  Chen-Ting Huang ,  I-Wei Wu

IPC分类号： H01L29/423 ,  H01L29/786 ,  H01L29/04

CPC分类号： H01L29/78696 ,  H01L29/42384 ,  H01L29/78645 ,  H01L29/78675

摘要： A thin film transistor for use in an active matrix liquid crystal display includes a substrate, a source and a drain regions, and at least a gate electrode. The substrate includes therein a plurality of intrinsic regions, at least one first doped region and two second doped regions. The first doped region is disposed between the plurality of intrinsic regions. The plurality of intrinsic regions are linked together to form a connection structure via the first doped region, and the two second doped regions are disposed at both ends of the connection structure, respectively. The source and the drain regions are coupled to the two second doped regions disposed at both ends of the connection structure, respectively. The gate electrode is disposed over the plurality of intrinsic regions, such that the periphery of each of the plurality of intrinsic regions and the periphery of a corresponding gate electrode are substantially aligned with each other.

摘要翻译： 用于有源矩阵液晶显示器的薄膜晶体管包括衬底，源极和漏极区以及至少栅电极。 衬底中包括多个本征区域，至少一个第一掺杂区域和两个第二掺杂区域。 第一掺杂区域设置在多个固有区域之间。 多个本征区域连接在一起，以经由第一掺杂区域形成连接结构，并且两个第二掺杂区域分别设置在连接结构的两端。 源区和漏区分别耦合到设置在连接结构两端的两个第二掺杂区。 栅电极设置在多个本征区域上，使得多个本征区域中的每一个的周边和相应的栅电极的周边基本上彼此对准。

公开(公告)号：US5703382A

公开(公告)日：1997-12-30

申请号：US559862

申请日：1995-11-20

申请人： Michael G. Hack ,  I-Wei Wu

发明人： Michael G. Hack ,  I-Wei Wu

IPC分类号： G02F1/1368 ,  H01L27/12 ,  H01L29/786 ,  A01L29/04 ,  G02F1/1343

CPC分类号： H01L29/78696 ,  H01L27/12 ,  H01L29/78645 ,  G02F1/1368

摘要： Cell circuitry in an array on a substrate includes a TFT or other structure with a series of two or more channels and with an intrachannel region between each pair of adjacent channels in the series. Each intrachannel region has a continuously distribution of dopant particles and the distribution of dopant particles in the intrachannel regions together controls reverse gate bias leakage current without significantly reducing ON current. The average dopant density in intrachannel regions can be sufficiently low to ensure that reverse gate bias leakage current is approximately constant across a range of reverse gate bias voltages. For applications such as light valve arrays, sensor arrays, and memory arrays in which each cell includes a capacitive element for storing a level of charge in one of two or more voltage bands, the average dopant density of intrachannel regions can ensure that reverse gate bias leakage current is sufficiently low that a level of charge stored by the capacitive element remains within its voltage band during a storage period.

摘要翻译： 衬底中的阵列中的单元电路包括具有一系列两个或更多个通道的TFT或其它结构，并且在串联中的每对相邻通道之间具有通道内区域。 每个通道内区域具有掺杂剂颗粒的连续分布，并且通道区域中的掺杂剂颗粒的分布一起控制反向栅极偏置泄漏电流，而不显着降低导通电流。 沟道内区域中的平均掺杂剂密度可以足够低以确保反向栅极偏置漏电流在反向栅极偏置电压的范围内近似恒定。 对于诸如光阀阵列，传感器阵列和存储器阵列的应用，其中每个单元包括用于在两个或更多个电压带之一中存储电荷水平的电容元件，通道间区域的平均掺杂剂密度可以确保反向栅极偏置 泄漏电流足够低，使得在存储周期期间由电容元件存储的电荷水平保持在其电压带内。

公开(公告)号：US5038184A

公开(公告)日：1991-08-06

申请号：US443993

申请日：1989-11-30

申请人： Anne Chiang ,  Scott A. Elrod ,  Babur Hadimioglu ,  Tiao-Yuan Huang ,  Takamasa J. Oki ,  I-Wei Wu

发明人： Anne Chiang ,  Scott A. Elrod ,  Babur Hadimioglu ,  Tiao-Yuan Huang ,  Takamasa J. Oki ,  I-Wei Wu

IPC分类号： H01L21/822 ,  H01L27/04 ,  H01L29/93 ,  H01L29/94

CPC分类号： H01L29/94

摘要： This disclosure relates to semiconductor varactors, such as thin film poly-Si varactors, which have larger effective gate areas in accumulation than in depletion, together with capacitive switching ratios which are essentially determined by the ratio of their effective gate area in accumulation to their effective gate area in depletion. To that end, such a varactor has a fully depletable active semiconductor layer, such as a thin poly-Si film, and is constructed so that at least a part of its active layer is sandwiched between a relatively thin dielectric layer and a relatively thick dielectric layer. The thin dielectric layer, in turn, is sandwiched between the active semiconductor layer and a gate electrode. Furthermore, one or more ground electrodes are electrically coupled to laterally offset portions of the active semiconductor layer in partial overlapping alignment with the gate electrode. In keeping with this invention, the capacitance per unit surface area of the thin dielectric layer is so much greater than the capacitance per unit surface area of the thick dielectric layer that the series capacitance of the depleted active semiconductor layer and the thick dielectric layer negligibly contribute to the capacitance of the varactor when it is operating in its depletion mode. Top-gate and bottom-gate embodiments having ground electrodes which are coplanar with the active semiconductor layer, ground electrodes which are in a plane adjacent to the active semiconductor layer, segmented gate electrodes and segmented ground electrodes, and continuous gate electrodes and segmented ground electrodes are disclosed.

公开(公告)号：US4951113A

公开(公告)日：1990-08-21

申请号：US268832

申请日：1988-11-07

申请人： Tiao-Yuan Huang ,  Anne Chiang ,  I-Wei Wu

发明人： Tiao-Yuan Huang ,  Anne Chiang ,  I-Wei Wu

IPC分类号： H01L21/8238 ,  H01L27/092 ,  H01L27/12 ,  H01L29/78 ,  H01L29/786

CPC分类号： H01L27/1251 ,  H01L27/092 ,  H01L27/1214 ,  H01L29/78663 ,  H01L29/78672

摘要： A thin film SOI CMOS device wheren the suitably doped deposited layers of an n-channel transistor and a p-channel transistor are simultaneously deposited. The source and drain elements of one transistor and the gate element of the other transistor are formed in a lower, highly doped, semiconductor layer and are separated from the corresponding gate element and source and drain elements formed in an upper, highly doped, semiconductor layer. The layer levels are separated by two intrinsic or lightly doped semiconductor layers sandwiching a dielectric layer, so that the intrinsic or lightly doped semiconductor layer lying contiguous to the source and drain elements serves as an active channel layer and the intrinsic or lightly doped semiconductor layer lying contiguous to the gate element serves to extend the gate layer.

摘要翻译： 一种薄膜SOI CMOS器件，其中同时沉积n沟道晶体管和p沟道晶体管的适当掺杂的沉积层。 一个晶体管的源极和漏极元件和另一个晶体管的栅极元件形成在下部，高度掺杂的半导体层中，并且与相应的栅极元件分离，并且源极和漏极元件形成在上部，高度掺杂的半导体层 。 层级由夹持介电层的两个本征或轻掺杂半导体层分开，使得邻近源极和漏极元件的本征或轻掺杂半导体层用作有源沟道层，并且本征或轻掺杂半导体层位于 邻接于栅极元件用于延伸栅极层。

公开(公告)号：US07812800B2

公开(公告)日：2010-10-12

申请号：US11232478

申请日：2005-09-21

申请人： Du-Zen Peng ,  Po-Yen Lu ,  Yaw-Ming Tsai ,  I-Wei Wu

发明人： Du-Zen Peng ,  Po-Yen Lu ,  Yaw-Ming Tsai ,  I-Wei Wu

IPC分类号： G09G3/32

CPC分类号： G09G3/3233 ,  G09G3/22 ,  G09G5/02 ,  G09G2300/0452 ,  G09G2300/0819 ,  G09G2300/0842 ,  G09G2320/0233 ,  G09G2320/043 ,  G09G2320/0666 ,  G09G2360/148

摘要： A design approach for a panel including a luminiferous unit and a driving unit. The luminiferous unit comprises first and second color components respectively constituting first and second light component sources. First and second light components are emitted from the first and the second light component sources. The color of the first light component differs from that of the second light component. The design approach comprises defining a specific relationship according to a characteristic between the first and the second color components; and designing the driving unit according to the specific relationship.

摘要翻译： 面板的设计方法，包括发光单元和驱动单元。 发光单元包括分别构成第一和第二光分量源的第一和第二颜色分量。 第一和第二光分量从第一和第二光分量源发射。 第一光分量的颜色与第二光分量的颜色不同。 该设计方法包括根据第一和第二颜色分量之间的特性定义特定关系; 并根据具体关系设计驱动单元。

公开(公告)号：US07002652B2

公开(公告)日：2006-02-21

申请号：US10907053

申请日：2005-03-18

申请人： Chi-Jain Wen ,  Dai-Liang Ting ,  Hsiao-Yi Lin ,  Gwo-Long Lin ,  I-Wei Wu

发明人： Chi-Jain Wen ,  Dai-Liang Ting ,  Hsiao-Yi Lin ,  Gwo-Long Lin ,  I-Wei Wu

IPC分类号： G02F1/1368 ,  G02F1/1343

CPC分类号： G02F1/133555 ,  G02F1/13624

摘要： A transflective liquid crystal display (LCD) includes at least a transmission pixel region and at least a reflection pixel region positioned in a pixel region. The transmission region includes at least a transmissive electrode connected to a first switching element. The reflection pixel region includes at least a reflective electrode connected to a second switching element. The transmissive and the reflective electrodes are controlled respectively by independent switching elements.

摘要翻译： 半透射型液晶显示器（LCD）至少包括透射像素区域和至少位于像素区域中的反射像素区域。 透射区域至少包括连接到第一开关元件的透射电极。 反射像素区域至少包括连接到第二开关元件的反射电极。 透射和反射电极分别由独立的开关元件控制。

公开(公告)号：US06731352B2

公开(公告)日：2004-05-04

申请号：US10161301

申请日：2002-06-03

申请人： Chu-Jung Shih ,  Gwo-Long Lin ,  I-Min Lu ,  I-Wei Wu

发明人： Chu-Jung Shih ,  Gwo-Long Lin ,  I-Min Lu ,  I-Wei Wu

IPC分类号： G02F1136

CPC分类号： G02F1/136227 ,  G02F2202/104

摘要： A six mask-steps method for fabricating liquid crystal display is described. A driving area and a pixel area are defined by a first mask step. Gates on the driving/pixel area and upper electrodes of capacitors on the pixel area are defined by a second mask step. Then, using the gates and the upper electrodes as a mask, a source/drain, channel region and lower electrode are formed in the driving/pixel area by an ion-doping process. A second insulation layer is formed and covers the insulation substrate. A plurality of first openings is formed by the third mask step and the gate and the source/drain are exposed. A second conductive layer is formed and covers the second insulation layer and the first opening is filled. Then, the second conductive layer is patterned, and a source/drain line is formed and contacts electrically with the source/drain by the fourth mask step. A dielectric layer is formed and covers the second insulation layer and the second conductive layer; the dielectric layer has a planar surface. A second opening is formed by the fifth mask step and the drain line on the pixel area is exposed. Finally, a pixel electrode is defined by the sixth mask step and contacts electrically with the drain line.

摘要翻译： 描述了用于制造液晶显示器的六个掩模步骤方法。 驱动区域和像素区域由第一掩模步骤限定。 通过第二掩模步骤限定像素区域上的驱动/像素区域和电容器的上部电极。 然后，使用栅极和上部电极作为掩模，通过离子掺杂工艺在驱动/像素区域中形成源极/漏极，沟道区域和下部电极。 形成第二绝缘层并覆盖绝缘基板。 通过第三掩模步骤形成多个第一开口，露出栅极和源极/漏极。 形成第二导电层并覆盖第二绝缘层，并填充第一开口。 然后，对第二导电层进行构图，并且通过第四掩模步骤形成源极/漏极线并与源极/漏极电接触。 形成介电层并覆盖第二绝缘层和第二导电层; 电介质层具有平坦表面。 通过第五掩模步骤形成第二开口，并且暴露像素区域上的漏极线。 最后，像素电极由第六掩模步骤限定，并与漏极线电接触。