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公开(公告)号:US08761553B2
公开(公告)日:2014-06-24
申请号:US13302371
申请日:2011-11-22
申请人: Sahnggi Park , Gyungock Kim , In Gyoo Kim , Jeong Woo Park , Sang Hoon Kim , Do Won Kim
发明人: Sahnggi Park , Gyungock Kim , In Gyoo Kim , Jeong Woo Park , Sang Hoon Kim , Do Won Kim
CPC分类号: H04J14/028 , G02B6/12007 , H01S5/026 , H01S5/1032 , H01S5/4087 , H04J14/02 , H04J14/0201
摘要: Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.
摘要翻译: 提供了一种光网络结构。 为了在CPU中配置数百个或更多个核心之间的光网络结构,不会发生波导之间的交叉,因此,光网络结构在所有核心之间实现双向通信,而光交换机不设置在交叉点。 本发明使得能够使用硅光子学光学元件的单芯片光网络,并且可以开发配置有数百或数千个核的CPU芯片。
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公开(公告)号:US08548281B2
公开(公告)日:2013-10-01
申请号:US12872881
申请日:2010-08-31
申请人: Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
发明人: Gyungock Kim , Jeong Woo Park , Jongbum You , Sang Gi Kim , Sanghoon Kim , In Gyoo Kim , Jiho Joo , Duk Jun Kim , Dongwoo Suh , Sahnggi Park , Ki Seok Jang , Junghyung Pyo , Kap-Joong Kim , Do Won Kim , Dae Seo Park
IPC分类号: G02F1/025
CPC分类号: G02F1/025 , G02F2201/063
摘要: Provided is an electro-optic modulating device. The electro-optic modulating device includes an optical waveguide with a vertical structure and sidewalls of the vertical structure are used to configure a junction.
摘要翻译: 提供了一种电光调制装置。 电光调制装置包括具有垂直结构的光波导,垂直结构的侧壁用于构造接合部。
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公开(公告)号:US20130156369A1
公开(公告)日:2013-06-20
申请号:US13535746
申请日:2012-06-28
申请人: Sahnggi Park , Kap-Joong Kim , In Gyoo Kim , Gyungock Kim
发明人: Sahnggi Park , Kap-Joong Kim , In Gyoo Kim , Gyungock Kim
IPC分类号: G02B6/12
CPC分类号: G02B6/12007 , G02B2006/12061
摘要: Provided is a ring resonator including first and second waveguides disposed spaced apart from each other, on a substrate, and at least one channel including at least one ring waveguide arranged in a row between the first and second waveguides. The first and second waveguides and the ring waveguide may be formed of silicon, a width of the ring waveguide may range from 0.7 μm to 1.5 μm, a height of the ring waveguide may range from 150 nm to 300 nm, and a space between the first and second waveguides and the ring waveguide most adjacent thereto may range from 250 nm to 1 mm.
摘要翻译: 提供了一种环形谐振器,包括彼此间隔开地布置在衬底上的第一和第二波导,以及包括在第一和第二波导之间布置成一行的至少一个环形波导的至少一个通道。 第一和第二波导和环形波导可以由硅形成,环形波导的宽度可以在0.7μm到1.5μm的范围内,环形波导的高度可以在150nm到300nm的范围内, 第一和第二波导以及与其最相邻的环形波导可以在250nm至1mm的范围内。
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公开(公告)号:US20130149806A1
公开(公告)日:2013-06-13
申请号:US13612736
申请日:2012-09-12
申请人: Sang Hoon KIM , Gyungock KIM , In Gyoo KIM , JiHo JOO , Ki Seok JANG
发明人: Sang Hoon KIM , Gyungock KIM , In Gyoo KIM , JiHo JOO , Ki Seok JANG
IPC分类号: H01L31/18
CPC分类号: H01L31/1804 , G02B6/12004 , G02B6/131 , H01L31/02327 , H01L31/103 , H01L31/1037 , H01L31/109 , Y02E10/547 , Y02P70/521
摘要: Methods of forming photo detectors are provided. The method includes providing a semiconductor layer on a substrate, forming a trench in the semiconductor layer, forming a first single crystalline layer and a second single crystalline layer using a selective single crystalline growth process in the trench, and patterning the first and second single crystalline layers and the semiconductor layer to form a first single crystalline pattern, a second single crystalline pattern and an optical waveguide.
摘要翻译: 提供了形成光电检测器的方法。 该方法包括在衬底上提供半导体层,在半导体层中形成沟槽,在沟槽中使用选择性单晶生长工艺形成第一单晶层和第二单晶层,以及使第一和第二单晶 层和半导体层以形成第一单晶图案,第二单晶图案和光波导。
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公开(公告)号:US20120148244A1
公开(公告)日:2012-06-14
申请号:US13302371
申请日:2011-11-22
申请人: Sahnggi PARK , Gyungock KIM , In Gyoo KIM , Jeong Woo PARK , Sang Hoon KIM , Do Won KIM
发明人: Sahnggi PARK , Gyungock KIM , In Gyoo KIM , Jeong Woo PARK , Sang Hoon KIM , Do Won KIM
IPC分类号: H04J14/02
CPC分类号: H04J14/028 , G02B6/12007 , H01S5/026 , H01S5/1032 , H01S5/4087 , H04J14/02 , H04J14/0201
摘要: Provided is an optical network structure. To configure an optical network structure between hundreds or more of cores in a CPU, intersection between waveguides does not occur, and thus, the optical network structure enables two-way communication between all the cores without an optical switch disposed in an intersection point. The present invention enables a single chip optical network using a silicon photonics optical element, and a CPU chip configured with hundreds or thousands of cores can be developed.
摘要翻译: 提供了一种光网络结构。 为了在CPU中配置数百个或更多个核心之间的光网络结构,不会发生波导之间的交叉,因此,光网络结构在所有核心之间实现双向通信,而光交换机不设置在交叉点。 本发明使得能够使用硅光子学光学元件的单芯片光网络,并且可以开发配置有数百或数千个核的CPU芯片。
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公开(公告)号:US20110133306A1
公开(公告)日:2011-06-09
申请号:US12788542
申请日:2010-05-27
申请人: In Gyoo KIM , Dae Seo Park , Jun Taek Hong , Gyungock Kim
发明人: In Gyoo KIM , Dae Seo Park , Jun Taek Hong , Gyungock Kim
IPC分类号: H01L29/06 , H01L21/762
CPC分类号: H01L21/7624 , H01L21/76243 , H01L21/76264 , H01L29/0657
摘要: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.
摘要翻译: 提供半导体器件及其形成方法。 根据该方法,在半导体衬底中局部地形成第一掩埋氧化物层,并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案,一对锚半导体图案和支撑半导体图案 埋入氧化物层以暴露第一掩埋氧化物层。 一对锚半导体图案分别接触芯半导体图案的两端,并且支撑半导体图案接触芯半导体图案的一个侧壁,去除芯半导体图案下方的第一掩埋氧化物层。 此时,保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。 形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。
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公开(公告)号:US20080151956A1
公开(公告)日:2008-06-26
申请号:US11952408
申请日:2007-12-07
申请人: Gyungock KIM , In Gyoo KIM , Junghyung PYO , Ki Seok CHANG
发明人: Gyungock KIM , In Gyoo KIM , Junghyung PYO , Ki Seok CHANG
IPC分类号: H01S5/323
CPC分类号: H01S5/34 , B82Y20/00 , H01S5/3407 , H01S5/3416 , H01S5/3419 , H01S5/3422 , H01S5/34306
摘要: An interband resonant tunneling intersubband transition laser is disclosed, and includes a semiconductor substrate, and a first cladding layer, an active region structure layer and a second cladding layer formed on the semiconductor substrate. The active region structure layer includes quantum well layers and quantum barrier layers that are alternately stacked and have a broken energy bandgap. Thus, the interband resonant tunneling intersubband transition laser operates in a cascade mode in which an intersubband radiative transition and interband tunneling of carriers consecutively and repetitively occur in the active region structure layer, and thus can achieve a high output from a simple, compact structure.
摘要翻译: 公开了一种带间谐振隧穿带间过渡激光器,并且包括半导体衬底和形成在半导体衬底上的第一覆层,有源区结构层和第二覆层。 有源区结构层包括量子阱层和量子势垒层,其交替堆叠并具有破坏的能带隙。 因此,带间共振隧穿带间过渡激光器以级联模式工作,其中载流子系统中的子带间辐射跃迁和带间隧穿在连续重复地发生在有源区结构层中,从而可以通过简单紧凑的结构实现高输出。
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公开(公告)号:US20070064757A1
公开(公告)日:2007-03-22
申请号:US11492920
申请日:2006-07-26
申请人: Gyung Ock Kim , In Gyoo Kim , Ki Joong Lee , Cheol Kyun Lee
发明人: Gyung Ock Kim , In Gyoo Kim , Ki Joong Lee , Cheol Kyun Lee
IPC分类号: H01S5/00
CPC分类号: H01S5/3402 , B82Y20/00
摘要: Provided is an avalanche quantum intersubband transition semiconductor laser. The laser includes: a first cladding layer, a first wave guide layer, an active region, a second wave guide layer, and a second cladding layer formed on a semiconductor substrate, wherein the active region consists of multiple stacks (periods) of a unit-cell structure, which is comprised of a carrier-multiplication layer structure for multiplying carriers, a carrier guide layer structure, and an QW active region to which carriers are injected, wherein intersubband optical radiative transitions of the carriers occur. Here, the carriers multiplied while passing though the carrier-multiplication layer structure, and injected into a optical transition level of the QW active region can achieve the high population inversion effectively, thereby high laser output power can be obtained with less stacked compact structure.
摘要翻译: 提供了一种雪崩量子子带内过渡半导体激光器。 激光器包括:形成在半导体衬底上的第一覆层,第一波导层,有源区,第二波导层和第二覆层,其中有源区由单元的多个堆叠(周期)组成 - 单元结构,其由用于乘法器的载波倍增层结构,载波引导层结构和注入载流子的QW有源区组成,其中载波的子带间光辐射跃迁发生。 这里,载波在通过载波倍增层结构的同时相乘,并且注入到QW有源区的光跃迁电平中可以有效地实现高群体反转,从而可以获得较小的堆叠紧凑结构的高激光输出功率。
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公开(公告)号:US08288185B2
公开(公告)日:2012-10-16
申请号:US12788542
申请日:2010-05-27
申请人: In Gyoo Kim , Dae Seo Park , Jun Taek Hong , Gyungock Kim
发明人: In Gyoo Kim , Dae Seo Park , Jun Taek Hong , Gyungock Kim
IPC分类号: H01L21/00
CPC分类号: H01L21/7624 , H01L21/76243 , H01L21/76264 , H01L29/0657
摘要: Provided are a semiconductor device and a method of forming the same. According to the method, a first buried oxide layer is locally formed in a semiconductor substrate and a core semiconductor pattern of a line form, a pair of anchor-semiconductor patterns and a support-semiconductor pattern are formed by patterning a semiconductor layer on the first buried oxide layer to expose the first buried oxide layer. The pair of anchor-semiconductor patterns contact both ends of the core semiconductor pattern, respectively, and the support-semiconductor pattern contacts one sidewall of the core semiconductor pattern, the first buried oxide layer below the core semiconductor pattern is removed. At this time, a portion of the first buried oxide layer below each of the anchor-semiconductor patterns and a portion of the first buried oxide layer below the support-semiconductor pattern remain. A second buried oxide layer is formed to fill a region where the first buried oxide layer below the core semiconductor pattern.
摘要翻译: 提供半导体器件及其形成方法。 根据该方法,在半导体衬底中局部地形成第一掩埋氧化物层,并且通过在第一衬底上图案化半导体层来形成线形式的芯半导体图案,一对锚半导体图案和支撑半导体图案 埋入氧化物层以暴露第一掩埋氧化物层。 一对锚半导体图案分别接触芯半导体图案的两端,并且支撑半导体图案接触芯半导体图案的一个侧壁,去除芯半导体图案下方的第一掩埋氧化物层。 此时,保留在半导体图案的每一个下面的第一掩埋氧化物层的一部分和位于载体半导体图案之下的第一掩埋氧化物层的一部分。 形成第二掩埋氧化物层以填充在芯半导体图案之下的第一掩埋氧化物层的区域。
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公开(公告)号:US08017420B2
公开(公告)日:2011-09-13
申请号:US12491443
申请日:2009-06-25
申请人: In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
发明人: In-Gyoo Kim , Dong-Woo Suh , Gyung-Ock Kim
IPC分类号: H01L21/00
摘要: Provided is a method of forming optical waveguide. The method includes forming a trench on a semiconductor substrate to define an active portion, and partially oxidizing the active portion. An non-oxidized portion of the active portion is included in a core through which an optical signal passes, and an oxidized portion of the active portion is included in a cladding.
摘要翻译: 提供一种形成光波导的方法。 该方法包括在半导体衬底上形成沟槽以限定有源部分,并部分氧化活性部分。 有源部分的非氧化部分包括在光信号通过的芯中,有源部分的氧化部分包含在包层中。
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