公开(公告)号：US20100019349A1

公开(公告)日：2010-01-28

申请号：US12569750

申请日：2009-09-29

Applicant: Isaiah O. Oladeji ,  Alan Cuthbertson

Inventor： Isaiah O. Oladeji ,  Alan Cuthbertson

IPC: H01L29/92

CPC classification number: H01L27/0805 ,  H01L21/76838 ,  H01L28/75

Abstract: A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.

Abstract translation: 公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。 该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。 第一铜层通过第一铜阻挡层与衬底基本上化学隔离。 在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。 电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。 在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。 第二铜层以非镶嵌工艺形成。

公开(公告)号：US08414971B2

公开(公告)日：2013-04-09

申请号：US12931748

申请日：2011-02-09

Applicant: Isaiah O. Oladeji

Inventor： Isaiah O. Oladeji

IPC: B05D3/02

CPC classification number: H01L29/22 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/1241 ,  C23C18/1275 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02628 ,  H01L21/67207 ,  H01L21/6838 ,  H01L21/68785 ,  Y10T428/12528

Abstract: A method for depositing a solid film of ZnO onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains a source of Zn, a source of O, and multiple ligands to further control solution stability and shelf life. The chilled solution is dispensed through a showerhead onto a substrate. The substrate is positioned in a holder that has a raised structure peripheral to the substrate to retain or impound a controlled volume (or depth) of reagent solution over the exposed surface of the substrate. The reagent solution is periodically or continuously replenished from the showerhead so that only the part of the solution directly adjacent to the substrate is heated. A heater is disposed beneath the substrate and maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solution may be initiated. The showerhead may also dispense excess chilled reagent solution to cool various components within the apparatus and minimize nucleation of solids in areas other than on the substrate. The deposited film may be annealed after deposition and may be doped to enhance selected characteristics. The ZnO films made by the process have distinctive electrical and optical properties and are suitable for a variety of electronic and optical devices.

Abstract translation: 从试剂溶液将ZnO的固体膜沉积在基材上的方法包括保持在足够低的温度下以防止试剂溶液内的均匀反应的试剂溶液储存器。 试剂溶液含有Zn源，O源和多个配体，以进一步控制溶液的稳定性和保质期。 冷却的溶液通过喷头分配到基底上。 衬底被定位在保持器中，该保持器具有围绕衬底周边的凸起结构，以将受控体积（或深度）的试剂溶液保持或压制在衬底的暴露表面上。 试剂溶液从喷头定期或连续地补充，使得只有与基底直接相邻的溶液部分被加热。 将加热器设置在基底下方并将基底保持在可以开始从试剂溶液沉积所需固相的升高的温度。 淋浴头还可以分配多余的冷冻试剂溶液以冷却装置内的各种组分，并使除了在基底上的区域中的固体的成核最小化。 沉积的膜可以在沉积之后退火，并且可以被掺杂以增强所选择的特性。 该方法制备的ZnO薄膜具有独特的电气和光学性能，适用于各种电子和光学器件。

公开(公告)号：US07793611B2

公开(公告)日：2010-09-14

申请号：US12656000

申请日：2010-01-12

Applicant: Isaiah O. Oladeji

Inventor： Isaiah O. Oladeji

IPC: B05C11/00

CPC classification number: H01L29/22 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/1241 ,  C23C18/1275 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02628 ,  H01L21/67207 ,  H01L21/6838 ,  H01L21/68785 ,  Y10T428/12528

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of solution maintained at a low temperature to inhibit homogeneous reactions. The solution contains multiple ligands to control temperature stability and shelf life. The chilled solution is periodically dispensed onto a substrate positioned in a holder having a raised peripheral structure that retains a controlled volume of solution over the substrate. The solution is periodically replenished so that only the part of the solution directly adjacent to the substrate is heated. A heater maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the solution may be initiated. The apparatus may also dispense excess chilled solution to cool various components within the apparatus and minimize nucleation of solids in areas other than on the substrate. The apparatus is particularly suited to forming films of II-VI semiconductors.

公开(公告)号：US07700161B2

公开(公告)日：2010-04-20

申请号：US12151562

申请日：2008-05-07

Applicant: Isaiah O. Oladeji

Inventor： Isaiah O. Oladeji

IPC: C23C4/08

CPC classification number: H01L29/22 ,  C23C18/06 ,  C23C18/1216 ,  C23C18/1241 ,  C23C18/1275 ,  C23C18/1279 ,  C23C18/1283 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02573 ,  H01L21/02628 ,  H01L21/67207 ,  H01L21/6838 ,  H01L21/68785 ,  Y10T428/12528

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes a reservoir of reagent solution maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solution. The reagent solution contains multiple ligands to further control temperature stability and shelf life. The chilled solution is dispensed through a showerhead onto a substrate. The substrate is positioned in a holder that has a raised structure peripheral to the substrate to retain or impound a controlled volume (or depth) of reagent solution over the exposed surface of the substrate. The reagent solution is periodically or continuously replenished from the showerhead so that only the part of the solution directly adjacent to the substrate is heated. A heater is disposed beneath the substrate and maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solution may be initiated. The showerhead may also dispense excess chilled reagent solution to cool various components within the apparatus and minimize nucleation of solids in areas other than on the substrate. The apparatus and its associated method of use are particularly suited to forming films of II-VI semiconductors.

Abstract translation: 用于从试剂溶液将固体膜沉积到基底上的装置包括保持在足够低的温度下以抑制试剂溶液中的均匀反应的试剂溶液储存器。 试剂溶液含有多个配体以进一步控制温度稳定性和保质期。 冷却的溶液通过喷头分配到基底上。 衬底被定位在保持器中，该保持器具有围绕衬底周边的凸起结构，以将受控体积（或深度）的试剂溶液保持或压制在衬底的暴露表面上。 试剂溶液从喷头定期或连续地补充，使得只有与基底直接相邻的溶液部分被加热。 将加热器设置在基底下方并将基底保持在可以开始从试剂溶液沉积所需固相的升高的温度。 淋浴头还可以分配多余的冷冻试剂溶液以冷却装置内的各种组分，并使除了在基底上的区域中的固体的成核最小化。 该装置及其相关使用方法特别适用于形成II-VI族半导体的膜。

公开(公告)号：US07601604B2

公开(公告)日：2009-10-13

申请号：US11549052

申请日：2006-10-12

Applicant: Isaiah O. Oladeji ,  Alan Cuthbertson

Inventor： Isaiah O. Oladeji ,  Alan Cuthbertson

IPC: H01L21/4763

CPC classification number: H01L27/0805 ,  H01L21/76838 ,  H01L28/75

Abstract: A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.

Abstract translation: 公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。 该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。 第一铜层通过第一铜阻挡层与衬底基本上化学隔离。 在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。 电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。 在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。 第二铜层以非镶嵌工艺形成。

公开(公告)号：US20080057658A1

公开(公告)日：2008-03-06

申请号：US11470552

申请日：2006-09-06

Applicant: Isaiah O. Oladeji ,  Alan Cuthbertson

Inventor： Isaiah O. Oladeji ,  Alan Cuthbertson

IPC: H01L21/20

CPC classification number: H01L21/76885 ,  H01L21/76834 ,  H01L23/5227 ,  H01L23/53238 ,  H01L28/10 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of forming one or more inductors on a substrate is disclosed. The method includes forming a first dielectric material over the substrate, forming a trench in the first dielectric material, and substantially filling the trench with copper to form the one or more inductors. The first dielectric material is removed and a second dielectric material is formed over the copper. The second dielectric material is removed from an uppermost portion of the copper, thus leaving a portion of the second dielectric material on the sidewalls of the copper.

Abstract translation: 公开了一种在衬底上形成一个或多个电感器的方法。 该方法包括在衬底上形成第一介电材料，在第一介电材料中形成沟槽，并用铜基本上填充沟槽以形成一个或多个电感器。 去除第一电介质材料，并在铜上形成第二电介质材料。 第二电介质材料从铜的最上部去除，因此在铜的侧壁上留下一部分第二电介质材料。

公开(公告)号：US20140170480A1

公开(公告)日：2014-06-19

申请号：US13998717

申请日：2013-11-26

Applicant: Isaiah O. Oladeji

Inventor： Isaiah O. Oladeji

IPC: H01M4/04 ,  H01M4/74

CPC classification number: H01M4/74 ,  H01M4/0404 ,  H01M4/0435 ,  H01M4/0471 ,  H01M4/13 ,  H01M4/139 ,  H01M4/362 ,  H01M4/485 ,  H01M4/661 ,  H01M10/052 ,  H01M10/0564 ,  Y02P70/54

Abstract: A method for making a composite electrode for a lithium ion battery comprises the steps of: preparing a slurry containing particles of inorganic electrode material(s) suspended in a solvent; preheating a porous metallic substrate; loading the metallic substrate with the slurry; baking the loaded substrate at a first temperature; curing the baked substrate at a second temperature sufficient to form a desired nanocrystalline material within the pores of the substrate; calendaring the cured composite to reduce internal porosity; and, annealing the calendared composite at a third temperature to produce a self-supporting multiphase electrode. Because of the calendaring step, the resulting electrode is self-supporting, has improved current collecting properties, and improved cycling lifetime. Anodes and cathodes made by the process, and batteries using them, are also disclosed.

Abstract translation: 制备锂离子电池用复合电极的方法包括以下步骤：制备含有悬浮在溶剂中的无机电极材料颗粒的浆料; 预热多孔金属基材; 用浆料装载金属基材; 在第一温度下烘烤所加载的衬底; 在足以在衬底的孔内形成期望的纳米晶体材料的第二温度下固化烘焙的衬底; 压延固化复合材料以减少内部孔隙率; 并且在第三温度退火压延复合材料以产生自支撑多相电极。 由于压延步骤，所得电极是自支撑的，具有改善的集电性能和改善的循环寿命。 还公开了通过该方法制造的阳极和阴极以及使用它们的电池。

公开(公告)号：US08349498B2

公开(公告)日：2013-01-08

申请号：US12798515

申请日：2010-04-06

Applicant: Isaiah O. Oladeji

Inventor： Isaiah O. Oladeji

IPC: H01M10/0562 ,  H01M10/0525 ,  H01G9/02 ,  H01G9/022 ,  B05D5/00 ,  H01M10/052

CPC classification number: H01M10/0585 ,  C23C18/1216 ,  H01B1/10 ,  H01L21/6719 ,  H01L21/67207 ,  H01L21/6838 ,  H01L21/68785 ,  H01L29/22 ,  H01M10/052 ,  H01M10/054 ,  H01M10/0562 ,  H01M2300/0068 ,  Y10T29/49115

Abstract: A method for making ion conducting films includes the use of primary inorganic chemicals, which are preferably water soluble; formulating the solution with appropriate solvent, preferably deionized water; and spray depositing the solid electrolyte matrix on a heated substrate, preferably at 100 to 400° C. using a spray deposition system. In the case of lithium, the deposition step is then followed by lithiation or addition of lithium, then thermal processing, at temperatures preferably ranging between 100 and 500° C., to obtain a high lithium ion conducting inorganic solid state electrolyte. The method may be used for other ionic conductors to make electrolytes for various applications. The electrolyte may be incorporated into a lithium ion battery.

Abstract translation: 制造离子导电膜的方法包括使用优选水溶性的初级无机化学品; 用合适的溶剂配制溶液，优选去离子水; 并使用喷雾沉积系统将固体电解质基质喷雾沉积在加热的基底上，优选在100至400℃。 在锂的情况下，沉积步骤之后是在优选在100和500℃之间的温度下进行锂离子或锂的加热，然后进行热处理，以获得高的锂离子导电无机固态电解质。 该方法可用于其它离子导体，以制备用于各种应用的电解质。 电解质可以结合到锂离子电池中。

公开(公告)号：US08225744B2

公开(公告)日：2012-07-24

申请号：US12931747

申请日：2011-02-09

Applicant: Isaiah O. Oladeji

Inventor： Isaiah O. Oladeji

IPC: B05B1/02 ,  B05C11/00 ,  B05C11/10

CPC classification number: C23C18/1204 ,  C23C18/1258 ,  C23C18/1283 ,  C23C18/1291 ,  C23C18/1295 ,  H01L21/02568 ,  H01L21/02628 ,  H01L21/67207

Abstract: An apparatus for depositing a solid film onto a substrate from a reagent solution includes reservoirs of reagent solutions maintained at a sufficiently low temperature to inhibit homogeneous reactions within the reagent solutions. The chilled solutions are dispensed through showerheads, one at a time, onto a substrate. One of the showerheads includes a nebulizer so that the reagent solution is delivered as a fine mist, whereas the other showerhead delivers reagent as a flowing stream. A heater disposed beneath the substrate maintains the substrate at an elevated temperature at which the deposition of a desired solid phase from the reagent solutions may be initiated. Each reagent solution contains at least one metal and either S or Se, or both. At least one of the reagent solutions contains Cu. The apparatus and its associated method of use are particularly suited to forming films of Cu-containing compound semiconductors.

Abstract translation: 用于从试剂溶液将固体膜沉积在基材上的装置包括维持在足够低的温度下以抑制试剂溶液内均匀反应的试剂溶液的储存器。 将冷却的溶液通过喷头（一次一个）分配到基材上。 其中一个喷头包括雾化器，使得试剂溶液以微细的雾流输送，而另一个喷头将试剂作为流动流输送。 设置在基板下方的加热器将基板保持在可以启动来自试剂溶液的所需固相沉积的升高的温度。 每个试剂溶液含有至少一种金属和S或Se或两者。 至少一种试剂溶液含有Cu。 该装置及其相关使用方法特别适用于形成含Cu化合物半导体的膜。

公开(公告)号：US08022548B2

公开(公告)日：2011-09-20

申请号：US12569750

申请日：2009-09-29

Applicant: Isaiah O. Oladeji ,  Alan Cuthbertson

Inventor： Isaiah O. Oladeji ,  Alan Cuthbertson

IPC: H01L21/00

CPC classification number: H01L27/0805 ,  H01L21/76838 ,  H01L28/75

Abstract: A method of forming one or more capacitors on or in a substrate and a capacitor structure resulting therefrom is disclosed. The method includes forming a trench in the substrate, lining the trench with a first copper-barrier layer, and substantially filling the trench with a first copper layer. The first copper layer is substantially chemically isolated from the substrate by the first copper-barrier layer. A second copper-barrier layer is formed over the first copper layer and a first dielectric layer is formed over the second copper-barrier layer. The dielectric layer is substantially chemically isolated from the first copper layer by the second copper-barrier layer. A third copper-barrier layer is formed over the dielectric layer and a second copper layer is formed over the third copper-barrier layer. The second copper layer is formed in a non-damascene process.

Abstract translation: 公开了一种在衬底上或衬底中形成一个或多个电容器的方法以及由此产生的电容器结构。 该方法包括在衬底中形成沟槽，用第一铜阻挡层衬套沟槽，并用第一铜层基本上填充沟槽。 第一铜层通过第一铜阻挡层与衬底基本上化学隔离。 在第一铜层上形成第二铜阻挡层，在第二铜阻挡层上形成第一电介质层。 电介质层通过第二铜阻挡层与第一铜层基本上化学隔离。 在电介质层上形成第三铜阻挡层，在第三铜阻挡层上形成第二铜层。 第二铜层以非镶嵌工艺形成。