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    Method of manufacturing GaN-based film
    3.
    发明授权
    Method of manufacturing GaN-based film 有权
    制造GaN基膜的方法

    公开(公告)号：US08697550B2

    公开(公告)日：2014-04-15

    申请号：US13643206

    申请日：2011-11-10

    申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

    发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

    IPC分类号： H01L21/20

    CPC分类号： H01L33/007 ,  H01L21/76256 ,  H01L33/0079

    摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

    摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性 单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

    Method of manufacturing GaN-based film
    4.
    发明授权
    Method of manufacturing GaN-based film 有权

    公开(公告)号：US08658527B2

    公开(公告)日：2014-02-25

    申请号：US13283963

    申请日：2011-10-28

    申请人： Shinsuke Fujiwara ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Issei Satoh

    发明人： Shinsuke Fujiwara ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Issei Satoh

    IPC分类号： H01L21/28 ,  H01L21/3205

    摘要： A method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in its main surface is more than 0.8 time and less than 1.0 time as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a main surface side of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate, the single crystal film in the composite substrate being an SiC film. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage without crack being produced in a substrate is provided.

    Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal
    5.
    发明授权
    Nitride semiconductor crystal manufacturing apparatus, nitride semiconductor crystal manufacturing method, and nitride semiconductor crystal 失效
    氮化物半导体晶体制造装置，氮化物半导体晶体制造方法和氮化物半导体晶体

    公开(公告)号：US08613802B2

    公开(公告)日：2013-12-24

    申请号：US13060276

    申请日：2010-01-20

    申请人： Issei Satoh ,  Michimasa Miyanaga ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    发明人： Issei Satoh ,  Michimasa Miyanaga ,  Yoshiyuki Yamamoto ,  Hideaki Nakahata

    IPC分类号： C30B23/06

    CPC分类号： C30B23/066 ,  C30B29/403

    摘要： Affords nitride semiconductor crystal manufacturing apparatuses that are durable and that are for manufacturing nitride semiconductor crystal in which the immixing of impurities from outside the crucible is kept under control, and makes methods for manufacturing such nitride semiconductor crystal, and the nitride semiconductor crystal itself, available. A nitride semiconductor crystal manufacturing apparatus (100) is furnished with a crucible (101), a heating unit (125), and a covering component (110). The crucible (101) is where, interiorly, source material (17) is disposed. The heating unit (125) is disposed about the outer periphery of the crucible (101), where it heats the crucible (101) interior. The covering component (110) is arranged in between the crucible (101) and the heating unit (125). The covering component (110) includes a first layer (111) formed along the side opposing the crucible (101), and made of a metal whose melting point is higher than that of the source material (17), and a second layer (112) formed along the outer periphery of the first layer (111), and made of a carbide of the metal that constitutes the first layer (111).

    摘要翻译： 使氮化物半导体晶体制造装置耐久，并且用于制造氮化物半导体晶体，其中坩埚外部杂质的固定被控制，并且制造这种氮化物半导体晶体的方法和氮化物半导体晶体本身可用 。 氮化物半导体晶体制造装置（100）具有坩埚（101），加热单元（125）和覆盖部件（110）。 坩埚（101）内部设置有源材料（17）。 加热单元（125）围绕坩埚（101）的外周设置，其中坩埚（101）内部加热。 覆盖部件（110）布置在坩埚（101）和加热单元（125）之间。 覆盖部件（110）包括沿与坩埚（101）相对的一侧形成的由熔点高于源材料（17）的金属制成的第一层（111）和第二层（112） ）沿着第一层（111）的外周形成，并且由构成第一层（111）的金属的碳化物构成。

    METHOD OF MANUFACTURING GaN-BASED FILM
    6.
    发明申请
    METHOD OF MANUFACTURING GaN-BASED FILM 有权
    制造GaN基膜的方法

    公开(公告)号：US20130040442A1

    公开(公告)日：2013-02-14

    申请号：US13643206

    申请日：2011-11-10

    申请人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

    发明人： Issei Satoh ,  Yuki Seki ,  Koji Uematsu ,  Yoshiyuki Yamamoto ,  Hideki Matsubara ,  Shinsuke Fujiwara ,  Masashi Yoshimura

    IPC分类号： H01L21/20

    CPC分类号： H01L33/007 ,  H01L21/76256 ,  H01L33/0079

    摘要： The present method of manufacturing a GaN-based film includes the steps of preparing a composite substrate, the composite substrate including a support substrate in which a coefficient of thermal expansion in a main surface is more than 0.8 time and less than 1.2 times as high as a coefficient of thermal expansion of GaN crystal in a direction of a axis and a single crystal film arranged on a side of the main surface of the support substrate, the single crystal film having threefold symmetry with respect to an axis perpendicular to a main surface of the single crystal film, and forming a GaN-based film on the main surface of the single crystal film in the composite substrate. Thus, a method of manufacturing a GaN-based film capable of manufacturing a GaN-based film having a large main surface area and less warpage is provided.

    摘要翻译： 本发明的制造GaN基膜的方法包括以下步骤：制备复合基板，该复合基板包括主表面的热膨胀系数大于0.8倍且小于1.2倍的支撑基板 GaN晶体沿轴向的热膨胀系数和布置在支撑基板的主表面侧的单晶膜，单晶膜相对于垂直于主表面的轴线具有三重对称性 单晶膜，并且在复合衬底中的单晶膜的主表面上形成GaN基膜。 因此，提供了一种制造能够制造具有大的主表面积和较少翘曲的GaN基膜的GaN基膜的方法。

    COMPOSITE BASE INCLUDING SINTERED BASE AND BASE SURFACE FLATTENING LAYER, AND COMPOSITE SUBSTRATE INCLUDING THAT COMPOSITE BASE AND SEMICONDUCTOR CRYSTALLINE LAYER
    9.
    发明申请
    COMPOSITE BASE INCLUDING SINTERED BASE AND BASE SURFACE FLATTENING LAYER, AND COMPOSITE SUBSTRATE INCLUDING THAT COMPOSITE BASE AND SEMICONDUCTOR CRYSTALLINE LAYER 有权
    复合基底包括烧结基体和基体表面平坦层，以及包括复合基体和半导体晶体层的复合基材

    公开(公告)号：US20120228612A1

    公开(公告)日：2012-09-13

    申请号：US13107241

    申请日：2011-05-13

    申请人： Yuki Seki ,  Issei Satoh ,  Koji Uematsu ,  Yoshiyuki Yamamoto

    发明人： Yuki Seki ,  Issei Satoh ,  Koji Uematsu ,  Yoshiyuki Yamamoto

    IPC分类号： H01L29/04 ,  B32B3/00 ,  H01L29/06

    CPC分类号： H01L29/02 ,  B32B2264/102 ,  B32B2307/704 ,  B32B2457/14 ,  H01L21/76254 ,  H01L27/1214 ,  H01L27/1266 ,  Y10T428/24355

    摘要： A composite base of the present invention includes a sintered base and a base surface flattening layer disposed on the sintered base, and the base surface flattening layer has a surface RMS roughness of not more than 1.0 nm. A composite substrate of the present invention includes the composite base and a semiconductor crystal layer disposed on a side of the composite base where the base surface flattening layer is located, and a difference between a thermal expansion coefficient of the sintered base and a thermal expansion coefficient of the semiconductor crystal layer is not more than 4.5×10−6K−1. Thereby, a composite substrate in which a semiconductor crystal layer is attached to a sintered base, and a composite base suitably used for that composite substrate are provided.

    摘要翻译： 本发明的复合基材包括烧结基体和设置在烧结基体上的基面平坦化层，基面平坦化层的表面RMS粗糙度不大于1.0nm。 本发明的复合基板包括复合基材和设置在复合基材的位于基面平坦化层的一侧的半导体晶体层，烧结基体的热膨胀系数与热膨胀系数之差 的半导体晶体层不超过4.5×10-6K-1。 由此，提供将半导体结晶层附着在烧结基体上的复合基板和适合用于该复合基板的复合基材。