公开(公告)号：US08383301B2

公开(公告)日：2013-02-26

申请号：US13305987

申请日：2011-11-29

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： G03F1/00 ,  G03F1/40

CPC分类号： G03F1/00 ,  G03F1/32 ,  G03F1/40

摘要： Methods for designing, fabricating, and using attenuated phase shift reticles, or photomasks are disclosed. Methods are also disclosed for subdividing the radiation blocking regions of previously fabricated reticles of previously existing designs. The methods may include forming radiation blocking regions that are subdivided, by cut lines, into discrete, spaced apart sections with dimensions (e.g., surface area, etc.) configured to minimize or eliminate the buildup of electrostatic energy by the radiation blocking regions and/or the discharge of electrostatic energy from the radiation blocking regions and the damage that may be caused by such electrostatic discharge. The methods may include configuring the reticle to prevent radiation from passing through the cut lines between adjacent sections of a subdivided radiation blocking region.

摘要翻译： 公开了设计，制造和使用衰减相移掩模版或光掩模的方法。 还公开了用于细分先前存在的设计的先前制造的掩模版的辐射阻挡区域的方法。 所述方法可以包括将辐射阻挡区域形成为通过切割线细分成具有尺寸（例如，表面积等）的离散且间隔开的部分，其被配置成最小化或消除由辐射阻挡区域产生的静电能量和/ 或者从辐射阻挡区域放出静电能和由这种静电放电引起的损坏。 所述方法可以包括配置掩模版以防止辐射穿过细分辐射阻挡区域的相邻部分之间的切割线。

公开(公告)号：US07767365B2

公开(公告)日：2010-08-03

申请号：US11515089

申请日：2006-08-31

申请人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

发明人： Craig M. Carpenter ,  James Baugh ,  Steve McDonald ,  Robert Rasmussen ,  J. Brett Rolfson ,  Azeddine Zerrade

IPC分类号： G03F1/00

CPC分类号： G03F1/82 ,  G03F1/32 ,  G03F1/54 ,  G03F1/80

摘要： A method for removing impurities (e.g., atomic sulfur) from a reticle for use in photolithography is provided. In one embodiment, a reticle (or photomask) comprising a plate, a first layer over the plate, and a photoresist layer over the first layer is provided. The photoresist layer is removed with a first chemistry comprising a sulfur-containing compound. At least a portion of the first layer is removed with a second chemistry comprising a sulfur-containing etchant, thereby exposing portions of the plate. Removing the photoresist layer and/or at least a portion of the first layer leaves sulfur on at least portions of the reticle. In a cleaning step, the reticle is contacted with one or more excited species of oxygen to remove residual sulfur and other contaminants, such as carbon, sulfur and oxygen-containing species. Methods of embodiments can be used to clean, e.g., binary photomasks, attenuated phase shift masks (APSMs) and high transmission attenuated photomasks.

摘要翻译： 提供从用于光刻的掩模版中除去杂质（例如原子硫）的方法。 在一个实施例中，提供了包括板，板上的第一层和第一层上的光致抗蚀剂层的掩模版（或光掩模）。 用包含含硫化合物的第一化学物质除去光致抗蚀剂层。 用包含含硫蚀刻剂的第二化学物质除去第一层的至少一部分，从而暴露板的部分。 去除光致抗蚀剂层和/或第一层的至少一部分在掩模版的至少部分上留下硫。 在清洁步骤中，将掩模版与一种或多种激发的氧气接触以除去残留的硫和其它污染物，例如碳，硫和含氧物质。 实施例的方法可用于清洁例如二值光掩模，衰减相移掩模（APSM）和高透射衰减光掩模。

公开(公告)号：US07592105B2

公开(公告)日：2009-09-22

申请号：US11486523

申请日：2006-07-13

申请人： Randall W. Chance ,  J. Brett Rolfson ,  Azeddine Zerrade

发明人： Randall W. Chance ,  J. Brett Rolfson ,  Azeddine Zerrade

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/32 ,  C03C15/00 ,  G03F1/26 ,  G03F1/72

摘要： The invention includes methods of converting reticles from configurations suitable for utilization with later generation (shorter wavelength) stepper radiations to configurations suitable for utilization with earlier generation (longer wavelength) stepper radiations. The invention can be utilized for converting a reticle from a configuration suitable for 193 nanometer wavelength radiation to a configuration suitable for 248 nanometer wavelength radiation. In such aspect, a quartz-containing material of a substrate can be protected with a patterned layer consisting essentially of molybdenum and silicon while the quartz-containing material is subjected to a dry etch. The configuration suitable for 248 nanometer wavelength radiation can be constructed so that a phase of 248 nanometer wavelength radiation is shifted by about 180° upon passing through combined thicknesses of the patterned layer and the quartz-containing material, relative to 248 nanometer wavelength radiation which passes only through the quartz-containing material.

摘要翻译： 本发明包括从适合于利用后代（较短波长）步进辐射的配置转换掩模版到适于利用早期生成（更长波长）步进辐射的配置的方法。 本发明可用于将掩模版从适于193纳米波长辐射的配置转换成适合于248纳米波长辐射的配置。 在这种方面，可以用基本上由钼和硅组成的图案层来保护衬底的含石英材料，同时对含石英的材料进行干蚀刻。 可以构造适合于248纳米波长辐射的配置，使得248纳米波长辐射的相位相对于通过图案化层和含石英的材料的组合厚度相对于相对于通过的248纳米波长辐射而偏移大约180度 仅通过含石英材料。

公开(公告)号：US06693345B2

公开(公告)日：2004-02-17

申请号：US09995372

申请日：2001-11-26

申请人： John T. Moore ,  Scott Jeffrey DeBoer ,  Mark Fischer ,  J. Brett Rolfson ,  Annette L. Martin ,  Ardavan Niroomand

发明人： John T. Moore ,  Scott Jeffrey DeBoer ,  Mark Fischer ,  J. Brett Rolfson ,  Annette L. Martin ,  Ardavan Niroomand

IPC分类号： H01L2358

CPC分类号： H01L21/0217 ,  G03F7/091 ,  H01L21/022 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02362 ,  H01L21/0274 ,  H01L21/0332 ,  H01L21/31144 ,  H01L21/312 ,  H01L21/3185

摘要： In one aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) forming a photoresist over and against the barrier layer. In another aspect, the invention includes a semiconductor processing method, comprising: a) providing a silicon nitride material having a surface; b) forming a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; c) forming a photoresist over and against the barrier layer; d) exposing the photoresist to a patterned beam of light to render at least one portion of the photoresist more soluble in a solvent than an other portion, the barrier layer being an antireflective surface that absorbs light passing through the photoresist; and e) exposing the photoresist to the solvent to remove the at least one portion while leaving the other portion over the barrier layer. In yet another aspect, the invention includes a semiconductor wafer assembly, comprising: a) a silicon nitride material, the material having a surface; b) a barrier layer over the surface of the material, the barrier layer comprising silicon and nitrogen; and c) a photoresist over and against the barrier layer.

公开(公告)号：US06664171B2

公开(公告)日：2003-12-16

申请号：US10304194

申请日：2002-11-25

申请人： Fernando Gonzalez ,  Thomas A. Figura ,  J. Brett Rolfson

发明人： Fernando Gonzalez ,  Thomas A. Figura ,  J. Brett Rolfson

IPC分类号： H01L21324

CPC分类号： H01L28/40 ,  H01L21/324 ,  H01L23/3171 ,  H01L2924/0002 ,  H01L2924/19041 ,  H01L2924/00

摘要： A method for alloying a semiconductor substrate upon which wordlines enclosed in spacers have been formed, with the substrate exposed between the wordlines. A thin sealing layer is deposited over the substrate and the wordlines, the sealing layer helping to maintain the alloy in said substrate. The alloying material employed in the substrate is hydrogen and optionally monatomic hydrogen. Alloying the substrate with monatomic hydrogen may also be done after deposition of a metal layer, or at other process steps as desired.

公开(公告)号：US06486074B1

公开(公告)日：2002-11-26

申请号：US09614359

申请日：2000-07-12

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： H01L21302

CPC分类号： H01L21/31133 ,  H01L21/0273

摘要： A method of masking and etching a semiconductor substrate includes forming a layer to be etched over a semiconductor substrate. An imaging layer is formed over the layer to be etched. Selected regions of the imaging layer are removed to leave a pattern of openings extending only partially into the imaging layer. After the removing, the layer to be etched is etched using the imaging layer as an etch mask. In one implementation, an ion implant lithography method of processing a semiconductor includes forming a layer to be etched over a semiconductor substrate. An imaging layer of a selected thickness is formed over the layer to be etched. Selected regions of the imaging layer are ion implanted to change solvent solubility of implanted regions versus non-implanted regions of the imaging layer, with the selected regions not extending entirely through the imaging layer thickness. The ion implanted regions of the imaging layer are removed to leave a pattern of openings extending only partially into the imaging layer. After the removing, the layer to be etched is etched using the imaging layer as an etch mask.

摘要翻译： 掩模和蚀刻半导体衬底的方法包括在半导体衬底上形成待蚀刻的层。 在待蚀刻的层上形成成像层。 去除成像层的选定区域以留下仅部分地延伸到成像层中的开口图案。 在去除之后，使用成像层作为蚀刻掩模蚀刻待蚀刻的层。 在一个实施方案中，处理半导体的离子注入光刻方法包括在半导体衬底上形成待蚀刻的层。 在待蚀刻层上形成所选厚度的成像层。 成像层的选定区域被离子注入以改变注入区域对成像层的非注入区域的溶剂溶解度，其中所选择的区域不完全延伸穿过成像层厚度。 去除成像层的离子注入区域以留下仅部分地延伸到成像层中的开口图案。 在去除之后，使用成像层作为蚀刻掩模蚀刻待蚀刻的层。

公开(公告)号：US06469436B1

公开(公告)日：2002-10-22

申请号：US09483713

申请日：2000-01-14

申请人： Terry N. Williams ,  J. Brett Rolfson

发明人： Terry N. Williams ,  J. Brett Rolfson

IPC分类号： H01J1304

CPC分类号： H01J3/022 ,  H01J31/127 ,  H01J2201/02

摘要： Structures and methods are provided for shielding field emitter devices from radiation. In one exemplary embodiment, a shielding layer inhibits radiation from degrading field emitter devices while exerting a predetermined force upon the field emitter devices so as to restrain from damaging the structure of the devices or affect the devices' electronic or electrical performance. In another exemplary embodiment, the field emitter under the protection of the shielding layer is capable of sustaining structural equilibrium. In yet another embodiment, the field emitter is capable of sustaining structural elasticity. In a further embodiment, the shielding layer may be comprised of tetratantalum boride; this compound inhibits radiation from degrading field emitter devices while exerting a predetermined force upon the field emitter devices so as to restrain from damaging the structure of the devices or affect the devices electronic or electrical performance; in another embodiment, the field emitter under the protection of the tetratantalum boride layer is capable of sustaining structural equilibrium; in another embodiment, the field emitter is capable of sustaining structural elasticity under the protection of the tetratantalum boride layer.

摘要翻译： 提供了用于屏蔽场发射器件免受辐射的结构和方法。 在一个示例性实施例中，屏蔽层在对场发射器件施加预定的力的同时抑制辐射降解场致发射器件，以便抑制损坏器件的结构或影响器件的电子或电气性能。 在另一示例性实施例中，在屏蔽层保护下的场致发射体能够维持结构平衡。 在另一个实施例中，场发射器能够维持结构弹性。 在另一实施例中，屏蔽层可以由四硼化钡组成; 该化合物在对场致发射器件施加预定的力的同时，抑制放射源降解场致发射器件，以便限制器件的结构损坏或影响器件的电子或电气性能; 在另一个实施方案中，在四硼化硼层保护下的场致发射体能够维持结构平衡; 在另一个实施例中，场发射体能够在四硼化硼层的保护下维持结构弹性。

公开(公告)号：US06417928B2

公开(公告)日：2002-07-09

申请号：US09793317

申请日：2001-02-26

申请人： Randhir P. S. Thakur ,  Michael Nuttall ,  J. Brett Rolfson ,  Robert James Burke

发明人： Randhir P. S. Thakur ,  Michael Nuttall ,  J. Brett Rolfson ,  Robert James Burke

IPC分类号： G01B1130

CPC分类号： G01B11/303

摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

公开(公告)号：US06352647B1

公开(公告)日：2002-03-05

申请号：US09304965

申请日：1999-05-05

申请人： J. Brett Rolfson

发明人： J. Brett Rolfson

IPC分类号： B44C122

CPC分类号： C23F1/02 ,  Y10T428/12715 ,  Y10T428/31504 ,  Y10T428/31678

摘要： Methods of making hardmask assemblies or other layered structures, and other masks, include providing an annular seal member between a first surface of layered structure, preferably a hardmask assembly, and a first clamp element, the hardmask assembly comprising at least a hardmask layer; and applying a force between the first clamp element and a second clamp element to hold the hardmask assembly between the annular seal member and the second clamp element. In addition, there are provided methods further comprising etching the first surface of the hardmask assembly within the bounds of an interior space defined by the annular seal member. Methods further comprise etching the substrate layer through the hardmask layer and/or removing the hardmask layer after etching the substrate layer.

摘要翻译： 制造硬掩模组件或其它分层结构和其它掩模的方法包括在层状结构的第一表面，优选硬掩模组件和第一夹紧元件之间提供环形密封构件，硬掩模组件至少包括硬掩模层; 以及在所述第一夹紧元件和第二夹紧元件之间施加力以将所述硬掩模组件保持在所述环形密封元件和所述第二夹紧元件之间。 此外，提供了进一步包括在由环形密封构件限定的内部空间的界限内蚀刻硬掩模组件的第一表面的方法。 方法还包括在蚀刻基底层之后通过硬掩模层蚀刻衬底层和/或去除硬掩模层。

公开(公告)号：US06328803B2

公开(公告)日：2001-12-11

申请号：US08805018

申请日：1997-02-21

申请人： J. Brett Rolfson ,  Elton Hochhalter

发明人： J. Brett Rolfson ,  Elton Hochhalter

IPC分类号： C23C1600

CPC分类号： H01J37/32431 ,  C23C16/4412 ,  C23C16/52

摘要： A method, apparatus and system for controlling a rate of pressure change in a vacuum process chamber during pump down and vent up cycles of a vacuum process are provided. The method includes sensing the pressure in the process chamber, and then controlling the rate of pressure change to achieve a desired rate for a particular vacuum process. For a pump down cycle, the apparatus can include a control valve in flow communication with the process chamber and with an evacuation pump. For a vent up cycle, the apparatus can include a control valve in flow communication with the process chamber and with an inert gas supply. With either embodiment controllers can be programmed to adjust positions of the control valves based upon feedback from pressure sensors. The system can include multiple chambers each having an associated pump down and vent up control apparatus configured to match the rates of pressure change between chambers.

摘要翻译： 提供了一种用于在抽真空过程的抽空和排气循环期间控制真空处理室中的压力变化率的方法，装置和系统。 该方法包括感测处理室中的压力，然后控制压力变化率以达到特定真空过程的期望速率。 对于抽气循环，设备可以包括与处理室和抽气泵流动连通的控制阀。 对于排气循环，该装置可以包括与处理室流动连通并具有惰性气体供应的控制阀。 通过任一实施例，控制器可以被编程以基于来自压力传感器的反馈来调节控制阀的位置。 该系统可以包括多个腔室，每个腔室具有相关联的泵送和排气控制装置，其配置成匹配腔室之间的压力变化率。