Variable sigma adjust methodology for static timing
    1.
    发明授权
    Variable sigma adjust methodology for static timing 失效
    静态时序的可变西格玛调整方法

    公开(公告)号:US07174523B2

    公开(公告)日:2007-02-06

    申请号:US10710734

    申请日:2004-07-30

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5031 G06F17/5045

    摘要: The invention presents a method of accommodating for across chip line variation (ACLV) and/or changing static timing of an integrated circuit design. The invention first establishes a circuit design having initial timing requirements and an initial voltage supply and also establishes a relationship between gate timing variations caused by voltage supply changes and gate timing variations caused by manufacturing processing changes. Then, according to the customer's orders that change the initial timing requirements to revised timing requirements, the invention changes the initial voltage supply to a revised voltage supply to accommodate the revised timing requirements (and ACLV if desired) based on the relationship between voltage limits and transistor delay. This process of changing the initial voltage supply does not alter the circuit design.

    摘要翻译: 本发明提出了一种适应跨芯片线路变化(ACLV)和/或改变集成电路设计的静态定时的方法。 本发明首先建立了具有初始定时要求和初始电压供应的电路设计,并且还建立由电压供应变化引起的门定时变化与由制造处理变化引起的门时序变化之间的关系。 然后,根据客户的订单,将初始时间要求改变为修订的时序要求,本发明将初始电压供应改变为修正的电源,以适应修订的时序要求(如果需要,则根据需要进行ACLV),基于电压限制和 晶体管延迟。 改变初始电压源的这个过程不会改变电路设计。

    Method and system of modeling leakage
    2.
    发明授权
    Method and system of modeling leakage 失效
    渗漏建模方法和系统

    公开(公告)号:US07793239B2

    公开(公告)日:2010-09-07

    申请号:US11379844

    申请日:2006-04-24

    IPC分类号: G06F17/50

    CPC分类号: G06F17/5036

    摘要: A method and system of modeling power leakage for a design comprises providing one or more cell libraries comprising parameters for particular device characteristics and providing a module configured to determine of cell leakages of a device for a PVT corner. In determining the cell leakage, the module uses the device characteristics contained in the one or more cell libraries, in combination with one or more components at a PVT for a predetermined application and an amount of devices in a leakage path (Fckt) and a leakage distribution (Fchip). There is no need to recharacterize the one or more cell libraries.

    摘要翻译: 用于设计功率泄漏建模的方法和系统包括提供一个或多个单元库,其包括用于特定器件特性的参数,并提供被配置为确定用于PVT角的器件的单元泄漏的模块。 在确定单元泄漏时,模块使用包含在一个或多个单元库中的器件特性,与PVT中的一个或多个组件结合用于预定应用,以及泄漏路径(Fckt)和泄漏 分配(Fchip)。 不需要重新定义一个或多个细胞库。