公开(公告)号：US5452164A

公开(公告)日：1995-09-19

申请号：US192680

申请日：1994-02-08

申请人： R. Wade Cole ,  Jyh-shuey J. Lo ,  James L. Su

发明人： R. Wade Cole ,  Jyh-shuey J. Lo ,  James L. Su

IPC分类号： G11B5/31 ,  G11B5/39 ,  G11B5/127 ,  G11B5/23

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/3163 ,  G11B5/3153 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： A thin film magnetic write head is provided wherein the write head has a pole tip region between a planar air bearing surface (ABS) and a zero throat level and a back region which extends back from the zero throat level to and including a back gap. The write head has a yoke which includes top and bottom magnetic poles. Each pole has a pole tip structure in the pole tip region and a back portion in the back region. The pole tip structure of the bottom pole has bottom and top pole tip elements PT1a and PT1b and the pole tip structure of the top pole has a top and bottom pole tip elements PT2a and PT2b. The pole tip elements PT1b and PT2b are located between the pole tip elements PT1a and PT2a and a gap layer G is located between the pole tip elements PT1b and PT2b. Each of the pole tip elements PT1b and PT2b and the gap layer G are bounded by front and back walls and first and second sidewalls. The first sidewalls of the pole tip elements PT1b and PT2b and the gap layer G are aligned with respect to one another and the second sidewalls of the pole tip elements PT1b and PT2b and the gap layer G are aligned with respect to one another. The front walls of the pole tip elements PT1b and PT2b and the gap layer G lie in a common plane which forms a portion of the ABS. The back walls of the pole tip elements PT1b and PT2b and the gap layer G lie in a common plane which forms the zero throat level. The common plane of the zero throat level is substantially parallel to the common plane of the ABS.

摘要翻译： 提供一种薄膜磁性写入头，其中写入头具有在平面空气轴承表面（ABS）和零喉部水平面之间的极尖区域和从零喉部水平向后延伸并包括后部间隙的后部区域。 写头具有包括顶部和底部磁极的磁轭。 每个极在极尖区域中具有极尖结构，在后部区域具有后部。 底极的极尖结构具有底极和顶极尖端元件PT1a和PT1b，并且顶极的极尖结构具有顶极和底极尖端元件PT2a和PT2b。 极尖元件PT1b和PT2b位于极尖元件PT1a和PT2a之间，间隙层G位于极尖元件PT1b和PT2b之间。 极尖元件PT1b和PT2b以及间隙层G中的每一个都由前壁和后壁以及第一和第二侧壁限定。 极尖元件PT1b和PT2b以及间隙层G的第一侧壁彼此对齐，并且极尖元件PT1b和PT2b的第二侧壁和间隙层G相对于彼此对准。 极尖元件PT1b和PT2b的前壁和间隙层G位于形成ABS的一部分的公共平面中。 极尖元件PT1b和PT2b的后壁和间隙层G位于形成零喉部水平的公共平面中。 零喉部水平面的公共平面基本上平行于ABS的共同平面。