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    Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation
    1.
    发明授权
    Fabrication of advanced thermoelectric materials by hierarchical nanovoid generation 有权
    通过分层纳米生成制造先进的热电材料

    公开(公告)号：US08083986B2

    公开(公告)日：2011-12-27

    申请号：US12315520

    申请日：2008-12-04

    Applicant: Sang Hyouk Choi ,  Yeonjoon Park ,  Sang-Hyon Chu ,  James R. Elliott ,  Glen C. King ,  Jae-Woo Kim ,  Peter T. Lillehei ,  Diane M. Stoakley

    Inventor： Sang Hyouk Choi ,  Yeonjoon Park ,  Sang-Hyon Chu ,  James R. Elliott ,  Glen C. King ,  Jae-Woo Kim ,  Peter T. Lillehei ,  Diane M. Stoakley

    IPC: B28B1/00

    CPC classification number: C22C1/04 ,  B22F2998/00 ,  B22F1/0018

    Abstract: A novel method to prepare an advanced thermoelectric material has hierarchical structures embedded with nanometer-sized voids which are key to enhancement of the thermoelectric performance. Solution-based thin film deposition technique enables preparation of stable film of thermoelectric material and void generator (voigen). A subsequent thermal process creates hierarchical nanovoid structure inside the thermoelectric material. Potential application areas of this advanced thermoelectric material with nanovoid structure are commercial applications (electronics cooling), medical and scientific applications (biological analysis device, medical imaging systems), telecommunications, and defense and military applications (night vision equipments).

    Abstract translation: 制备高级热电材料的新方法具有嵌入纳米尺寸空隙的分层结构，这是提高热电性能的关键。 基于溶液的薄膜沉积技术使得能够制备出热电材料和空穴发生器（voigen）的稳定膜。 随后的热过程在热电材料内部产生分级纳米结构。 这种具有纳米结构的先进热电材料的潜在应用领域是商业应用（电子冷却），医学和科学应用（生物分析装置，医学成像系统），电信以及国防和军事应用（夜视设备）。

    Micro Spectrometer for Parallel Light and Method of Use
    4.
    发明申请
    Micro Spectrometer for Parallel Light and Method of Use 有权
    用于平行光的微光谱仪和使用方法

    公开(公告)号：US20100039643A1

    公开(公告)日：2010-02-18

    申请号：US12496788

    申请日：2009-07-02

    Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

    Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

    IPC: G01J3/28

    CPC classification number: G01J3/18 ,  G01J3/02 ,  G01J3/0229 ,  G01J2003/1861 ,  G02F1/134309

    Abstract: A spectrometer system includes an optical assembly for collimating light, a micro-ring grating assembly having a plurality of coaxially-aligned ring gratings, an aperture device defining an aperture circumscribing a target focal point, and a photon detector. An electro-optical layer of the grating assembly may be electrically connected to an energy supply to change the refractive index of the electro-optical layer. Alternately, the gratings may be electrically connected to the energy supply and energized, e.g., with alternating voltages, to change the refractive index. A data recorder may record the predetermined spectral characteristic. A method of detecting a spectral characteristic of a predetermined wavelength of source light includes generating collimated light using an optical assembly, directing the collimated light onto the micro-ring grating assembly, and selectively energizing the micro-ring grating assembly to diffract the predetermined wavelength onto the target focal point, and detecting the spectral characteristic using a photon detector.

    Abstract translation: 光谱仪系统包括用于准直光的光学组件，具有多个同轴对准的环形光栅的微环格栅组件，限定限定目标焦点的孔的孔装置和光子检测器。 光栅组件的电光层可电连接到能量源以改变电光层的折射率。 或者，光栅可以电连接到能量供应并且例如用交流电压通电，以改变折射率。 数据记录器可以记录预定的光谱特性。 检测源光的预定波长的光谱特性的方法包括使用光学组件产生准直光，将准直光引导到微环格栅组件上，以及选择性地激励微环格栅组件以将预定波长衍射到 目标焦点，并使用光子检测器检测光谱特性。

    Micro Ring Grating Spectrometer with Adjustable Aperture
    5.
    发明申请
    Micro Ring Grating Spectrometer with Adjustable Aperture 有权
    具有可调孔径的微环光栅

    公开(公告)号：US20100039641A1

    公开(公告)日：2010-02-18

    申请号：US12487735

    申请日：2009-06-19

    Applicant: Yeonjoon Park ,  Glen C. King ,  James R. Elliott ,  Sang H. Choi

    Inventor： Yeonjoon Park ,  Glen C. King ,  James R. Elliott ,  Sang H. Choi

    IPC: G01J3/04 ,  G01J3/28

    CPC classification number: G01J3/18 ,  G01J3/02 ,  G01J3/0229 ,  G01J3/0237 ,  G01J3/0256 ,  G02B5/005 ,  G02B5/1876

    Abstract: A spectrometer includes a micro-ring grating device having coaxially-aligned ring gratings for diffracting incident light onto a target focal point, a detection device for detecting light intensity, one or more actuators, and an adjustable aperture device defining a circular aperture. The aperture circumscribes a target focal point, and directs a light to the detection device. The aperture device is selectively adjustable using the actuators to select a portion of a frequency band for transmission to the detection device. A method of detecting intensity of a selected band of incident light includes directing incident light onto coaxially-aligned ring gratings of a micro-ring grating device, and diffracting the selected band onto a target focal point using the ring gratings. The method includes using an actuator to adjust an aperture device and pass a selected portion of the frequency band to a detection device for measuring the intensity of the selected portion.

    Abstract translation: 光谱仪包括具有用于将入射光衍射到目标焦点的同轴对准环形光栅的微环格栅装置，用于检测光强度的检测装置，一个或多个致动器以及限定圆形孔径的可调节孔径装置。 光圈限定目标焦点，并将光引导到检测装置。 使用致动器可选择性地调节孔径装置，以选择频带的一部分以传输到检测装置。 检测入射光的所选频带的强度的方法包括将入射光引导到微环光栅装置的同轴对准的环形光栅上，并使用环形光栅将所选择的带衍射到目标焦点上。 该方法包括使用致动器来调节孔径装置并将频带的选定部分传递到用于测量所选部分的强度的检测装置。

    Fabrication of metallic hollow nanoparticles
    7.
    发明申请
    Fabrication of metallic hollow nanoparticles 有权
    金属中空纳米粒子的制备

    公开(公告)号：US20090203196A1

    公开(公告)日：2009-08-13

    申请号：US12315519

    申请日：2008-12-04

    Applicant: Jae-Woo KIM ,  Sang H. CHOI, SR. ,  Peter T. LILLEHEI ,  Sang-Hyon CHU ,  Yeonjoon PARK ,  Glen C. KING ,  James R. ELLIOTT, JR.

    Inventor： Jae-Woo KIM ,  Sang H. CHOI, SR. ,  Peter T. LILLEHEI ,  Sang-Hyon CHU ,  Yeonjoon PARK ,  Glen C. KING ,  James R. ELLIOTT, JR.

    IPC: H01L21/20 ,  B22F9/02

    CPC classification number: C01B19/007 ,  B01J13/02 ,  B01J13/203 ,  B22F1/0018 ,  B22F9/24 ,  B22F2001/0029 ,  B32B15/02 ,  B82Y5/00 ,  B82Y30/00 ,  H01L21/02428

    Abstract: Metal and semiconductor nanoshells, particularly transition metal nanoshells, are fabricated using dendrimer molecules. Metallic colloids, metallic ions or semiconductors are attached to amine groups on the dendrimer surface in stabilized solution for the surface seeding method and the surface seedless method, respectively. Subsequently, the process is repeated with additional metallic ions or semiconductor, a stabilizer, and NaBH4 to increase the wall thickness of the metallic or semiconductor lining on the dendrimer surface. Metallic or semiconductor ions are automatically reduced on the metallic or semiconductor nanoparticles causing the formation of hollow metallic or semiconductor nanoparticles. The void size of the formed hollow nanoparticles depends on the dendrimer generation. The thickness of the metallic or semiconductor thin film around the dendrimer depends on the repetition times and the size of initial metallic or semiconductor seeds.

    Abstract translation: 使用树状聚合物分子制造金属和半导体纳米壳，特别是过渡金属纳米壳。 分别将金属胶体，金属离子或半导体与稳定化溶液中的树枝状聚合物表面上的胺基连接，用于表面接种方法和表面无底法。 随后，用额外的金属离子或半导体，稳定剂和NaBH 4重复该过程，以增加树枝状聚合物表面上的金属或半导体衬里的壁厚。 金属或半导体离子在金属或半导体纳米颗粒上自动减少，导致中空金属或半导体纳米颗粒的形成。 形成的中空纳米颗粒的空隙大小取决于树枝状大分子的产生。 树枝状大分子周围的金属或半导体薄膜的厚度取决于初始金属或半导体种子的重复次数和尺寸。

    Multi-layer spacer with inhibited recess/undercut and method for fabrication thereof
    9.
    发明授权
    Multi-layer spacer with inhibited recess/undercut and method for fabrication thereof 失效
    具有抑制凹陷/底切的多层间隔物及其制造方法

    公开(公告)号：US07446007B2

    公开(公告)日：2008-11-04

    申请号：US11560893

    申请日：2006-11-17

    Applicant: James W. Adkisson ,  Marc W. Cantell ,  James R. Elliott ,  James V. Hart, III ,  Dale W. Martin

    Inventor： James W. Adkisson ,  Marc W. Cantell ,  James R. Elliott ,  James V. Hart, III ,  Dale W. Martin

    IPC: H01L21/336

    CPC classification number: H01L29/4983 ,  H01L21/28114 ,  H01L29/42376 ,  H01L29/665 ,  H01L29/6653 ,  H01L29/6656 ,  H01L29/6659

    Abstract: A semiconductor structure includes a multi-layer spacer located adjacent and adjoining a sidewall of a topographic feature within the semiconductor structure. The multi-layer spacer includes a first spacer sub-layer comprising a deposited silicon oxide material laminated to a second spacer sub-layer comprising a material that is other than the deposited silicon oxide material. The first spacer sub-layer is recessed with respect to the second spacer sub-layer by a recess distance of no greater than a thickness of the first spacer sub-layer (and preferably from about 50 to about 150 angstroms). Such a recess distance is realized through use of a chemical oxide removal (COR) etchant that is self limiting for the deposited silicon oxide material with respect to a thermally grown silicon oxide material. Dimensional integrity and delamination avoidance is thus assured for the multi-layer spacer layer.

    Abstract translation: 半导体结构包括位于半导体结构内邻近并毗邻地形特征的侧壁的多层隔离物。 多层间隔物包括第一间隔子层，该第一间隔子层包含层叠到包含不同于沉积氧化硅材料的材料的第二间隔子层的沉积氧化硅材料。 第一间隔子层相对于第二间隔物子层凹陷凹陷距离不大于第一间隔子层的厚度（优选为约50至约150埃）。 通过使用相对于热生长的氧化硅材料对沉积的氧化硅材料来说是自限制的化学氧化物去除（COR）蚀刻剂来实现这种凹陷距离。 因此确保了多层间隔层的尺寸完整性和分层避免。

    Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof
    10.
    发明授权
    Hybrid bandgap engineering for super-hetero-epitaxial semiconductor materials, and products thereof 有权
    超异质外延半导体材料的混合带隙工程及其产品

    公开(公告)号：US08226767B2

    公开(公告)日：2012-07-24

    申请号：US12254134

    申请日：2008-10-20

    Applicant: Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

    Inventor： Yeonjoon Park ,  Sang H. Choi ,  Glen C. King ,  James R. Elliott

    IPC: C30B25/18

    CPC classification number: G01N23/207

    Abstract: “Super-hetero-epitaxial” combinations comprise epitaxial growth of one material on a different material with different crystal structure. Compatible crystal structures may be identified using a “Tri-Unity” system. New bandgap engineering diagrams are provided for each class of combination, based on determination of hybrid lattice constants for the constituent materials in accordance with lattice-matching equations. Using known bandgap figures for previously tested materials, new materials with lattice constants that match desired substrates and have the desired bandgap properties may be formulated by reference to the diagrams and lattice matching equations. In one embodiment, this analysis makes it possible to formulate new super-hetero-epitaxial semiconductor systems, such as systems based on group IV alloys on c-plane LaF3; group IV alloys on c-plane langasite; Group III-V alloys on c-plane langasite; and group II-VI alloys on c-plane sapphire.

    Abstract translation: “超异质外延”组合包括在具有不同晶体结构的不同材料上的一种材料的外延生长。 可以使用“Tri-Unity”系统来识别兼容的晶体结构。 基于根据晶格匹配方程确定构成材料的混合晶格常数，为每种组合提供了新的带隙工程图。 对于先前测试的材料，使用已知的带隙图，可以通过参考图和晶格匹配方程来形成具有匹配所需衬底并具有期望带隙特性的晶格常数的新材料。 在一个实施例中，该分析使得可以配制新的超异质外延半导体系统，例如基于c面LaF 3上的基于IV族合金的系统; Ⅳ族合金在c面l石上; Ⅲ-Ⅴ族合金在c面硅酸盐岩上; 和II-VI族组合在c面蓝宝石上。

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