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    Tunable photonic crystal
    2.
    发明授权
    Tunable photonic crystal 有权
    可调光子晶体

    公开(公告)号：US07825380B2

    公开(公告)日：2010-11-02

    申请号：US12389239

    申请日：2009-02-19

    Applicant: Irina Puscasu ,  Martin U. Pralle ,  James T. Daly ,  Mark P. McNeal ,  Edward A. Johnson

    Inventor： Irina Puscasu ,  Martin U. Pralle ,  James T. Daly ,  Mark P. McNeal ,  Edward A. Johnson

    IPC: G01J1/00

    CPC classification number: G01N21/255 ,  B82Y20/00 ,  B82Y30/00 ,  G01J1/42 ,  G01J3/108 ,  G01J5/20 ,  G01N21/3504 ,  H01L31/101

    Abstract: An infrared emitter, which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow hand of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features are defined in the device in a periodic manner or quasi-periodic. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects.

    Abstract translation: 使用光子晶体（PC）结构来产生具有窄波长的手的电磁发射的红外发射器包括半导体材料层，覆盖半导体材料层的介电材料层和具有内侧覆盖层的金属材料层 介电材料层。 半导体材料层能够耦合到能量源以将能量引入到半导体材料层。 表面特征的阵列以周期性或准周期性方式在器件中定义。 发射器件适于发射具有通过周期性分布的表面特征的参数确定的光谱特性的电磁能，参数包括形状，尺寸，深度，分布几何形状，周期性，材料性质和缺陷。

    Filament for radiation source
    3.
    发明授权
    Filament for radiation source 有权
    辐射源灯丝

    公开(公告)号：US07280749B2

    公开(公告)日：2007-10-09

    申请号：US10074188

    申请日：2002-02-12

    Applicant: Peter G. Loges ,  James T. Daly ,  V. Mark Villafuerte ,  Christopher J. von Benken

    Inventor： Peter G. Loges ,  James T. Daly ,  V. Mark Villafuerte ,  Christopher J. von Benken

    IPC: A45D20/40 ,  H05B3/08

    CPC classification number: H05B3/009 ,  H05B2203/032

    Abstract: A radiation source including a base, a curved reflector attached to the base, pins passing through the base and within the reflector, and a filament of high emissivity material helically wound about the pins and having opposing ends electrically connected to the pins so that upon passage of electrical energy through the filament, the filament becomes electrically heated and emits infrared radiation.

    Abstract translation: 一种辐射源，包括基座，连接到基座的弯曲反射器，穿过基座并在反射器内的引脚，以及螺旋缠绕在销上的高辐射材料的细丝，并且具有电连接到引脚的相对端，使得在通过时 的电能通过灯丝，灯丝变得电加热并发射红外辐射。

    GaAs device having a strain-free c-doped layer
    4.
    发明授权
    GaAs device having a strain-free c-doped layer 失效
    具有无应变c掺杂层的GaAs器件

    公开(公告)号：US5231298A

    公开(公告)日：1993-07-27

    申请号：US833908

    申请日：1992-02-11

    Applicant: James T. Daly

    Inventor： James T. Daly

    IPC: H01L21/205 ,  H01L21/331

    CPC classification number: H01L29/66318 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579

    Abstract: A device made by a process of making strain-free, heavily carbon-doped p-type epitaxial layers for use in high performance devices and at least one such device so made. The process essentially includes the epitaxial deposition of a strain-free, carbon-doped p-type layer in a GaAs HBT device to form the base layer thereof in a manner that includes the balancing of the strain of the crystal lattice structure caused by the carbon doping by co-doping the base layer with an isovalent and isoelectric dopant. The co-doping also improves device performance. It also effects alloy hardening, which inhibits further defect formation, improves mobility and carrier lifetime of the base layer and, by narrowing the energy gap, it improves ohmic contact formation.

    Abstract translation: 通过制造用于高性能器件的至少一种这样的器件制造无应变，重碳掺杂的p型外延层的方法制造的器件。 该方法基本上包括在GaAs HBT器件中外延沉积无应变的碳掺杂p型层以形成其基底层，其方式包括由碳引起的晶格结构的应变的平衡 通过用等价和等电掺杂剂掺杂基底层来进行掺杂。 共掺杂也提高了器件性能。 它还影响合金硬化，这抑制了进一步的缺陷形成，改善了基层的迁移率和载流子寿命，并且通过缩小能隙，它改善了欧姆接触形成。

    TUNABLE PHOTONIC CRYSTAL
    6.
    发明申请
    TUNABLE PHOTONIC CRYSTAL 有权
    可调光子晶体

    公开(公告)号：US20090236614A1

    公开(公告)日：2009-09-24

    申请号：US12389239

    申请日：2009-02-19

    Applicant: Irina PUSCASU ,  Martin U. Pralle ,  James T. Daly ,  Mark P. McNeal ,  Edward A. Johnson

    Inventor： Irina PUSCASU ,  Martin U. Pralle ,  James T. Daly ,  Mark P. McNeal ,  Edward A. Johnson

    IPC: H01L31/12

    CPC classification number: G01N21/255 ,  B82Y20/00 ,  B82Y30/00 ,  G01J1/42 ,  G01J3/108 ,  G01J5/20 ,  G01N21/3504 ,  H01L31/101

    Abstract: An infrared emitter, which utilizes a photonic crystal (PC) structure to produce electromagnetic emissions with a narrow hand of wavelengths, includes a semiconductor material layer, a dielectric material layer overlaying the semiconductor material layer, and a metallic material layer having an inner side overlaying the dielectric material layer. The semiconductor material layer is capable of being coupled to an energy source for introducing energy to the semiconductor material layer. An array of surface features are defined in the device in a periodic manner or quasi-periodic. The emitter device is adapted to emit electromagnetic energy having spectral characteristics determined by parameters of the periodically distributed surface features, the parameters including shape, size, depth, distribution geometry, periodicity, material properties and defects.

    Abstract translation: 使用光子晶体（PC）结构来产生具有窄波长的手的电磁发射的红外发射器包括半导体材料层，覆盖半导体材料层的介电材料层和具有内侧覆盖层的金属材料层 介电材料层。 半导体材料层能够耦合到能量源以将能量引入到半导体材料层。 表面特征的阵列以周期性或准周期性方式在器件中定义。 发射器件适于发射具有通过周期性分布的表面特征的参数确定的光谱特性的电磁能，参数包括形状，尺寸，深度，分布几何形状，周期性，材料性质和缺陷。

    Monolithic infrared spectrometer apparatus and methods
    7.
    发明授权
    Monolithic infrared spectrometer apparatus and methods 失效
    单片红外光谱仪的设备及方法

    公开(公告)号：US06303934B1

    公开(公告)日：2001-10-16

    申请号：US09058488

    申请日：1998-04-10

    Applicant: James T. Daly ,  Andrew Bodkin ,  Michael J. Groden ,  Edward A. Johnson

    Inventor： James T. Daly ,  Andrew Bodkin ,  Michael J. Groden ,  Edward A. Johnson

    IPC: G01N2100

    CPC classification number: G02B17/086 ,  G01J3/02 ,  G01J3/0208 ,  G01J3/024 ,  G01J3/0259 ,  G01J3/0264 ,  G01J3/0283 ,  G01J3/0286 ,  G01J3/0291 ,  G01J3/10 ,  G01J3/18 ,  G01J3/28 ,  G01J3/2803 ,  G01J3/42 ,  G01J2005/0077 ,  G02B6/29328

    Abstract: A spectrometer system comprises (i) a slab waveguide characterized as an index of refraction higher than a surrounding medium, and having front surface and a rear surface opposite thereto, the front surface including a input portion for accepting optical radiation, a diffractor portion and an exit portion, (ii) a diffraction grating disposed on said diffractor portion of said front surface, (iii) a detector array aligned adjacent to the exit portion, and (iv) a mirror coated on the rear surface of the waveguide. Radiation transmitted within the waveguide from the input portion is reflected and collimated by the mirror to the granting. Light diffracted from the grating is dispersed to the mirror and reflected toward and through the exit portion and onto the array.

    Abstract translation: 光谱仪系统包括（i）平板波导，其特征在于折射率高于周围介质，并且具有与其相对的前表面和后表面，所述前表面包括用于接收光辐射的输入部分，衍射部分和 出口部分，（ii）设置在所述前表面的所述衍射器部分上的衍射光栅，（iii）邻近出口部分排列的检测器阵列，以及（iv）涂覆在波导的后表面上的反射镜。 在波导内从输入部分发射的辐射被镜子反射并准直到授权。 从光栅衍射的光分散到反射镜并朝向并穿过出射部分并且反射到阵列上。

    Process of making strain-free, carbon-doped epitaxial layers and products so made
    8.
    发明授权
    Process of making strain-free, carbon-doped epitaxial layers and products so made 失效
    制造无应变碳掺杂外延层和产品的工艺

    公开(公告)号：US5116455A

    公开(公告)日：1992-05-26

    申请号：US644999

    申请日：1991-01-24

    Applicant: James T. Daly

    Inventor： James T. Daly

    IPC: H01L21/205 ,  H01L21/331

    CPC classification number: H01L29/66318 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02546 ,  H01L21/02579 ,  Y10S438/925 ,  Y10S438/938

    Abstract: A process of making strain-free, heavily carbon-doped p-type epitaxial layers for use in high performance devices and at least one such device so made. The process essentially includes the epitaxial deposition of a strain-free, carbon-doped p-type layer in a GaAs HBT device to form the base layer thereof in a manner that includes the balancing of the strain of the crystal lattice structure caused by the carbon doping by co-doping the base layer with an isovalent and isoelectric dopant. The co-doping also improves device performance. It also effects alloy hardening, which inhibits further defect formation, improves mobility and carrier lifetime of the base layer and, by narrowing the energy gap, it improves ohmic contact formation.

    Abstract translation: 制造用于高性能器件和至少一个这样的器件的无应变，重掺杂p型外延层的工艺。 该方法基本上包括在GaAs HBT器件中外延沉积无应变的碳掺杂p型层以形成其基底层，其方式包括由碳引起的晶格结构的应变的平衡 通过用等价和等电掺杂剂掺杂基底层来进行掺杂。 共掺杂也提高了器件性能。 它还影响合金硬化，这抑制了进一步的缺陷形成，改善了基层的迁移率和载流子寿命，并且通过缩小能隙，它改善了欧姆接触形成。

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