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公开(公告)号:US08871650B2
公开(公告)日:2014-10-28
申请号:US13646113
申请日:2012-10-05
申请人: Srinivas D. Nemani , Nicolas J. Bright , Thorsten B. Lill , Yifeng Zhou , Jamie Saephan , Ellie Yieh
发明人: Srinivas D. Nemani , Nicolas J. Bright , Thorsten B. Lill , Yifeng Zhou , Jamie Saephan , Ellie Yieh
IPC分类号: H01L21/302 , H01L21/3105 , H01L21/768 , H01L21/311 , H01L21/02
CPC分类号: H01L21/76814 , H01L21/02063 , H01L21/02126 , H01L21/3105 , H01L21/31144 , H01L21/76826 , H01L2221/1063
摘要: Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.
摘要翻译: 描述了低k电介质膜的后蚀刻处理(PET)。 例如,图案化低k电介质膜的方法包括用第一等离子体工艺蚀刻设置在衬底上方的低k电介质层。 蚀刻涉及在低k电介质层上形成碳氟聚合物。 低k电介质层用第二等离子体工艺进行表面调节。 表面处理除去碳氟聚合物,并在低k电介质层上形成含有Si-O的保护层。 用第三等离子体工艺除去含Si-O的保护层。
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公开(公告)号:US20130109187A1
公开(公告)日:2013-05-02
申请号:US13646113
申请日:2012-10-05
申请人: Srinivas D. Nemani , Nicolas J. Bright , Thorsten B. Lill , Yifeng Zhou , Jamie Saephan , Ellie Yieh
发明人: Srinivas D. Nemani , Nicolas J. Bright , Thorsten B. Lill , Yifeng Zhou , Jamie Saephan , Ellie Yieh
IPC分类号: H01L21/3065
CPC分类号: H01L21/76814 , H01L21/02063 , H01L21/02126 , H01L21/3105 , H01L21/31144 , H01L21/76826 , H01L2221/1063
摘要: Post etch treatments (PETs) of low-k dielectric films are described. For example, a method of patterning a low-k dielectric film includes etching a low-k dielectric layer disposed above a substrate with a first plasma process. The etching involves forming a fluorocarbon polymer on the low-k dielectric layer. The low-k dielectric layer is surface-conditioned with a second plasma process. The surface-conditioning removes the fluorocarbon polymer and forms an Si—O-containing protecting layer on the low-k dielectric layer. The Si—O-containing protecting layer is removed with a third plasma process.
摘要翻译: 描述了低k电介质膜的后蚀刻处理(PET)。 例如,图案化低k电介质膜的方法包括用第一等离子体工艺蚀刻设置在衬底上方的低k电介质层。 蚀刻涉及在低k电介质层上形成碳氟聚合物。 低k电介质层用第二等离子体工艺进行表面调节。 表面处理除去碳氟聚合物,并在低k电介质层上形成含有Si-O的保护层。 用第三等离子体工艺除去含Si-O的保护层。
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