公开(公告)号：US20130055171A1

公开(公告)日：2013-02-28

申请号：US13401820

申请日：2012-02-21

申请人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

发明人： Jang Fung Chen ,  Duan-Fu Stephen Hsu ,  Douglas Van Den Broeke

IPC分类号： G06F17/50

CPC分类号： G06F17/5081 ,  G03F1/144 ,  G03F1/70 ,  G03F7/70466 ,  G06F2217/08 ,  G06F2217/12

摘要： A method of generating complementary masks based on a target pattern having features to be imaged on a substrate for use in a multiple-exposure lithographic imaging process is disclosed. The method includes defining an initial H-mask and an initial V-mask corresponding to the target pattern; identifying horizontal critical features in the H-mask and vertical critical features in the V-mask; assigning a first phase shift and a first percentage transmission to the horizontal critical features, which are to be formed in the H-mask; and assigning a second phase shift and a second percentage transmission to the vertical critical features, which are to be formed in the V-mask. The method further includes the step of assigning chrome to all non-critical features in the H-mask and the V-mask.

摘要翻译： 公开了一种基于具有待成像在基板上的特征的目标图案产生互补掩模以在多次曝光光刻成像过程中使用的方法。 该方法包括定义对应于目标图案的初始H掩模和初始V掩模; 识别V面罩中H面罩和垂直关键特征的水平关键特征; 将第一相移和第一百分比传输分配给​​要在H掩模中形成的水​​平临界特征; 以及将要在V掩模中形成的垂直关键特征分配第二相移和第二百分比传输。 该方法还包括将铬分配给H掩模和V掩模中的所有非关键特征的步骤。

公开(公告)号：US20120307225A1

公开(公告)日：2012-12-06

申请号：US13587773

申请日：2012-08-16

申请人： Jang Fung Chen ,  Thomas Laidig

发明人： Jang Fung Chen ,  Thomas Laidig

IPC分类号： G03B27/72 ,  G03F7/20

CPC分类号： G03B27/62 ,  G03F7/70275 ,  G03F7/70291 ,  G03F7/703 ,  G03F7/70508

摘要： System and method for applying mask data patterns to substrate in a lithography manufacturing process are disclosed. In one embodiment, a parallel imaging writer system includes a plurality of spatial light modulator (SLM) imaging units, where each of the plurality of SLM imaging units includes one or more illumination sources, one or more alignment sources, one or more projection lenses, and a plurality of micro mirrors configured to project light from the one or more illumination sources to the corresponding one or more projection lens. The parallel imaging writer system further includes a controller configured to control the plurality of SLM imaging units, where the controller tunes each of the SLM imaging unit individually in writing a mask data to a substrate.

摘要翻译： 公开了在光刻制造工艺中将掩模数据图案应用于衬底的系统和方法。 在一个实施例中，并行成像写入器系统包括多个空间光调制器（SLM）成像单元，其中多个SLM成像单元中的每一个包括一个或多个照明源，一个或多个对准源，一个或多个投影透镜， 以及多个微反射镜，其配置成将来自所述一个或多个照明源的光投射到相应的一个或多个投影透镜。 并行成像写入器系统还包括被配置为控制多个SLM成像单元的控制器，其中控制器将掩模数据写入衬底中来分别调整每个SLM成像单元。

公开(公告)号：US08120753B2

公开(公告)日：2012-02-21

申请号：US11979839

申请日：2007-11-08

申请人： Gabriel Berger ,  Tamer Coskun ,  Sangbong Park ,  Jang Fung Chen

发明人： Gabriel Berger ,  Tamer Coskun ,  Sangbong Park ,  Jang Fung Chen

IPC分类号： G03B27/32 ,  G03B27/54

CPC分类号： G03F7/70216 ,  G03F7/705 ,  G03F7/70675

摘要： A method of generating a model for simulating the imaging performance of an optical imaging system having a pupil. The method includes the steps of defining the optical imaging system and a process to be utilized by the optical imaging system; and defining a model equation representing the imaging performance of the optical imaging system and the process, where the model equation including a calibrated pupil kernel. The calibrated pupil kernel representing a linear model of the pupil performance.

摘要翻译： 一种生成用于模拟具有瞳孔的光学成像系统的成像性能的模型的方法。 该方法包括以下步骤：定义光学成像系统和由光学成像系统利用的过程; 并且定义表示光学成像系统和过程的成像性能的模型方程，其中模型方程式包括校准的瞳孔核心。 校准瞳孔代表瞳孔表现的线性模型。

公开(公告)号：US20110236808A1

公开(公告)日：2011-09-29

申请号：US13155259

申请日：2011-06-07

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

公开(公告)号：US07981576B2

公开(公告)日：2011-07-19

申请号：US12890494

申请日：2010-09-24

申请人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Duan-Fu Stephen Hsu ,  Sangbong Park ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G03F1/00 ,  G03F1/14 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F1/70 ,  G03F7/70125 ,  G03F7/70466

摘要： A method of generating complementary masks for use in a dark field double dipole imaging process. The method includes the steps of identifying a target pattern having a plurality of features, including horizontal and vertical features; generating a horizontal mask based on the target pattern, where the horizontal mask includes low contrast vertical features. The generation of the horizontal mask includes the steps of optimizing the bias of the low contrast vertical features contained in the horizontal mask; and applying assist features to the horizontal mask. The method further includes generating a vertical mask based on the target pattern, where the vertical mask contains low contrast horizontal features. The generation of the vertical mask includes the steps of optimizing the bias of low contrast horizontal features contained in the vertical mask; and applying assist features to the vertical mask.

摘要翻译： 一种产生用于暗场双偶极成像过程的互补掩模的方法。 该方法包括以下步骤：识别具有多个特征的目标图案，包括水平和垂直特征; 基于目标图案生成水平掩模，其中水平掩模包括低对比度垂直特征。 水平掩模的生成包括优化包含在水平掩模中的低对比度垂直特征的偏压的步骤; 并将辅助特征应用于水平掩模。 该方法还包括基于目标图案生成垂直掩模，其中垂直掩模包含低对比度水平特征。 垂直掩模的产生包括优化垂直掩模中包含的低对比度水平特征的偏差的步骤; 并将辅助特征应用于垂直掩模。

公开(公告)号：US07774736B2

公开(公告)日：2010-08-10

申请号：US11714147

申请日：2007-03-06

申请人： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

发明人： Douglas Van Den Broeke ,  Jang Fung Chen ,  Thomas Laidig ,  Kurt E. Wampler ,  Stephen Duan-Fu Hsu

IPC分类号： G06F17/50

CPC分类号： G03F1/36 ,  G03F7/70441

摘要： A method of generating a mask design having optical proximity correction features disposed therein. The methods includes the steps of obtaining a desired target pattern having features to be imaged on a substrate; determining an interference map based on the target pattern, the interference map defining areas of constructive interference and areas of destructive interference between at least one of the features to be imaged and a field area adjacent the at least one feature; and placing assist features in the mask design based on the areas of constructive interference and the areas of destructive interference.

摘要翻译： 一种产生具有设置在其中的光学邻近校正特征的掩模设计的方法。 所述方法包括以下步骤：获得具有要在基底上成像的特征的期望目标图案; 确定基于所述目标图案的干涉图，所述干涉图定义建构性干扰的区域和要成像的至少一个要素与邻近所述至少一个特征的场区域之间的相消干涉区域; 并且基于建设性干扰的区域和破坏性干扰的区域将辅助特征放置在掩模设计中。

公开(公告)号：US07713667B2

公开(公告)日：2010-05-11

申请号：US10998991

申请日：2004-11-30

申请人： Azat M. Latypov ,  Arno Jan Bleeker ,  Jang Fung Chen ,  Kars Zeger Troost

发明人： Azat M. Latypov ,  Arno Jan Bleeker ,  Jang Fung Chen ,  Kars Zeger Troost

IPC分类号： G03F9/00

CPC分类号： G03F7/70441 ,  G03F7/70291 ,  G03F7/70508

摘要： A method and system are used to modify pattern data obtained in relation to a pattern on a static patterning device. It is suggested that, in an example when a maskless lithography tool is used, continuous OPC-enhanced features used for maskless lithography rasterization should include a variation in local amplitude and phase transmittance that matches modulation capabilities of a patterning device being used. The modified pattern data is used by a dynamic patterning device to pattern impinging light, which is then projected onto an object. The system and method comprise using a pattern data generating device, a modification device, a dynamic pattern generator, and a projection system. The pattern data generating device generates pattern data corresponding to a pattern on a static patterning device. The modification device receives the pattern data and modifies the pattern data using characteristics of a type of the dynamic pattern generator being used. The dynamic pattern generator receives the modified patterned data and uses the modified pattern data to pattern the beam of radiation. The projection system projects the patterned beam onto the object.

摘要翻译： 使用方法和系统来修改相对于静态图案形成装置上的图案获得的图案数据。 建议在使用无掩模光刻工具的示例中，用于无掩模光刻光栅化的连续OPC增强特征应包括与正在使用的图案形成装置的调制能力相匹配的局部振幅和相位透射率的变化。 修改的图案数据由动态图案形成装置用于对入射光进行图案化，然后将其投影到物体上。 该系统和方法包括使用图案数据生成装置，修改装置，动态图案生成器和投影系统。 图案数据生成装置生成与静态图案形成装置上的图案对应的图案数据。 修改设备接收图案数据，并使用所使用的动态图案生成器的类型的特性来修改图案数据。 动态图案生成器接收经修改的图案数据并使用经修改的图案数据来对辐射束进行图案化。 投影系统将图案化的光束投射到物体上。

公开(公告)号：US07620930B2

公开(公告)日：2009-11-17

申请号：US11208015

申请日：2005-08-22

申请人： Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G06F17/50

CPC分类号： G03F7/70441 ,  G03F1/36

摘要： A method of generating a mask is provided that optimizes the placement and shape of optical proximity correction (OPC) features such as scattering bars. According to some aspects, the method includes model-based techniques for determining where to place assist features within the design, thereby eliminating the need for experienced mask designers to perform OPC, and also substantially reducing the time required to determine an acceptable OPC solution. According to further aspects, the method provides an OPC assist feature placement technique that enhances the resulting depth of focus even when imaging features have dimensions on the order of a quarter of the wavelength of the imaging system.

摘要翻译： 提供了一种产生掩模的方法，其优化了诸如散射条之类的光学邻近校正（OPC）特征的放置和形状。 根据一些方面，该方法包括用于确定在设计中放置辅助特征的位置的基于模型的技术，从而消除了对有经验的掩模设计者执行OPC的需要，并且还显着减少了确定可接受的OPC解决方案所需的时间。 根据另外的方面，该方法提供了一种OPC辅助特征放置技术，即使当成像特征具有成像系统的四分之一波长的尺寸时，也可增强所得到的聚焦深度。

公开(公告)号：US07523438B2

公开(公告)日：2009-04-21

申请号：US11108665

申请日：2005-04-19

申请人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Van Den Broeke ,  Jang Fung Chen

发明人： Michael Hsu ,  Stephen Hsu ,  Thomas Laidig ,  Douglas Van Den Broeke ,  Jang Fung Chen

IPC分类号： G06F17/50 ,  G03F1/00

CPC分类号： G03F1/32 ,  G03F7/70091 ,  G03F7/70125 ,  G03F7/70283 ,  G03F7/70466 ,  G03F7/70591

摘要： A method for optically transferring a lithographic pattern corresponding to an integrated circuit utilizing a high transmission attenuated phase-shift mask onto a semiconductor substrate by use of an optical exposure tool. The method comprising the steps of generating a diffraction pattern corresponding to the lithographic pattern, where the diffraction pattern indicates a plurality of spatial frequency components corresponding to the lithographic pattern; determining which of the spatial frequency components need to be captured by a lens in the optical exposure tool in order to accurately reproduce the lithographic pattern; determining a set of illumination conditions required for the optical exposure tool to capture the spatial frequency components necessary for accurately reproducing the lithographic pattern; and illuminating the high transmission attenuated phase-shift mask with this set of illumination conditions.

摘要翻译： 一种通过使用光学曝光工具将对应于利用高透射衰减相移掩模的集成电路的光刻图案光学转移到半导体衬底上的方法。 该方法包括以下步骤：产生对应于光刻图案的衍射图案，其中衍射图案表示对应于光刻图案的多个空间频率分量; 确定哪个空间频率分量需要被光学曝光工具中的透镜捕获，以便准确地再现光刻图案; 确定所述光学曝光工具所需的一组照明条件以捕获准确地再现所述光刻图案所需的空间频率分量; 并用该组照明条件照亮高透射衰减相移掩模。

公开(公告)号：US07514183B2

公开(公告)日：2009-04-07

申请号：US10981762

申请日：2004-11-05

申请人： Stephen D. Hsu ,  Jang Fung Chen ,  Xuelong Shi ,  Douglas Van Den Broeke

发明人： Stephen D. Hsu ,  Jang Fung Chen ,  Xuelong Shi ,  Douglas Van Den Broeke

IPC分类号： G03F1/00 ,  G06F17/50

CPC分类号： G03F1/36 ,  G03F7/70125 ,  G03F7/70425 ,  G03F7/70441

摘要： A method of generating a mask for use in a photolithography process. The method includes the steps of determining a target mask pattern having a plurality of features to be imaged and an illumination system to be utilized to image the mask; identifying a critical pitch within the target pattern and optimizing illumination settings of the illumination system for imaging the critical pitch; identifying a forbidden pitch within the target pattern; and modifying the transmittance of the features having a pitch equal to or substantially equal to the forbidden pitch such that the exposure latitude of the features equal to or substantially equal to the forbidden pitch is increased.

摘要翻译： 一种生成用于光刻工艺的掩模的方法。 该方法包括以下步骤：确定具有要成像的多个特征的目标掩模图案和要用于对掩模进行成像的照明系统; 识别所述目标图案内的临界音调并且优化所述照明系统的照明设置以对所述关键音调成像; 识别目标模式内的禁止音高; 以及修改具有等于或基本上等于禁止间距的间距的特征的透射率，使得等于或基本上等于禁止间距的特征的曝光宽容度增加。