公开(公告)号：US08760597B2

公开(公告)日：2014-06-24

申请号：US12805382

申请日：2010-07-28

Applicant: Kyoung-seok Son ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Ji-sim Jung

Inventor： Kyoung-seok Son ,  Kwang-hee Lee ,  Jang-yeon Kwon ,  Ji-sim Jung

IPC: G02F1/136

CPC classification number: H01L27/124 ,  G02F1/13624 ,  G09G3/3659 ,  G09G2300/0426 ,  G09G2310/067 ,  G09G2320/043 ,  H01L27/1225

Abstract: Example embodiments are directed to a switching device of an active display device and a method of driving the switching device, such that electrical reliability of the active display device is improved. The switching device of the active display device includes a plurality of thin film transistors (TFTs) that are connected in series. Except for a refresh time duration during which the plurality of TFTs of the switching device are simultaneously turned ON, a positive voltage is applied to at least one of the plurality of TFTs of the switching device so that a reliability of the switching device may be improved.

Abstract translation: 示例性实施例涉及有源显示装置的开关装置和驱动开关装置的方法，使得主动显示装置的电可靠性得到改善。 有源显示装置的开关装置包括串联连接的多个薄膜晶体管（TFT）。 除了开关装置的多个TFT同时导通的刷新持续时间之外，对开关装置的多个TFT中的至少一个施加正电压，从而可以提高开关装置的可靠性 。

公开(公告)号：US08476636B2

公开(公告)日：2013-07-02

申请号：US12314212

申请日：2008-12-05

Applicant: Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Tae-sang Kim ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Tae-sang Kim ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/76 ,  H01L31/036 ,  H01L31/112 ,  H01L27/01 ,  H01L27/12

CPC classification number: H01L29/78624 ,  H01L29/66765

Abstract: Provided may be a Poly-Si thin film transistor (TFT) and a method of manufacturing the same. The Poly-Si TFT may include a first Poly-Si layer on an active layer formed of Poly-Si and doped with a low concentration; and a second Poly-Si layer on the first Poly-Si layer and doped with the same concentration as the first Poly-Si layer or with a higher concentration than the first Poly-Si layer, wherein lightly doped drain (LDD) regions capable of reducing leakage current may be formed in inner end portions of the first Poly-Si layer.

Abstract translation: 提供可以是多晶硅薄膜晶体管（TFT）及其制造方法。 多晶硅TFT可以包括由多晶硅形成并掺杂低浓度的有源层上的第一多晶硅层; 和在第一多晶硅层上掺杂与第一多晶硅层相同的浓度或具有比第一多晶硅层更高的浓度的第二多晶硅层，其中能够 可以在第一多晶硅层的内端部形成减少漏电流。

公开(公告)号：US08383467B2

公开(公告)日：2013-02-26

申请号：US13564082

申请日：2012-08-01

Applicant: Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Byung-wook Yoo ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L21/00 ,  H01L21/84

CPC classification number: H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

Abstract: A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

Abstract translation: 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US08120029B2

公开(公告)日：2012-02-21

申请号：US12453293

申请日：2009-05-06

Applicant: Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Kyung-bae Park ,  Myung-kwan Ryu ,  Byung-wook Yoo ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-seok Son ,  Ji-sim Jung

IPC: H01L29/04

CPC classification number: H01L29/78609 ,  H01L29/78618

Abstract: Disclosed is a thin film transistor (TFT). The TFT may include an intermediate layer between a channel and a source and drain. An increased off current, which may occur to a drain area of the TFT, is reduced due to the intermediate layer. Accordingly, the TFT may be stably driven.

Abstract translation: 公开了一种薄膜晶体管（TFT）。 TFT可以包括通道与源极和漏极之间的中间层。 由于中间层，由于TFT的漏极区域可能发生的增加的截止电流减小。 因此，可以稳定地驱动TFT。

公开(公告)号：US20110127518A1

公开(公告)日：2011-06-02

申请号：US12805379

申请日：2010-07-28

Applicant: Ji-sim Jung ,  Chang-seung Lee ,  Jae-cheol Lee ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kwang-hee Lee ,  Kyoung-seok Son

Inventor： Ji-sim Jung ,  Chang-seung Lee ,  Jae-cheol Lee ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kwang-hee Lee ,  Kyoung-seok Son

IPC: H01L29/786 ,  H01L21/44 ,  H01L33/44

CPC classification number: H01L29/7869 ,  H01L29/78606

Abstract: Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.

Abstract translation: 提供晶体管，晶体管的制造方法和包括该晶体管的电子器件。 晶体管可以包括沟道层上的钝化层，源极，漏极和栅极，其中钝化层的成分在高度方向上变化。 钝化层可以具有依次层叠的包括氧化硅层，氮氧化硅层和氮化硅层的多层结构。 沟道层可以包括氧化物半导体。

公开(公告)号：US07923316B2

公开(公告)日：2011-04-12

申请号：US11808521

申请日：2007-06-11

Applicant: Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

Inventor： Kyung-bae Park ,  Takashi Noguchi ,  Se-young Cho ,  Do-young Kim ,  Jang-yeon Kwon

IPC: H01L21/00

CPC classification number: H01L29/66757 ,  H01L29/78603 ,  H01L29/78606

Abstract: In a method of forming a polysilicon film, a thin film transistor including a polysilicon film, and a method of manufacturing a thin film transistor including a polysilicon film, the thin film transistor includes a substrate, a first heat conduction film on the substrate, a second heat conduction film adjacent to the first heat conduction film, the second heat conduction film having a lower thermal conductivity than the first heat conduction film, a polysilicon film on the second heat conduction film and the first heat conduction film adjacent to the second heat conduction film, and a gate stack on the polysilicon film. The second heat conduction film may either be on the first heat conduction film or, alternatively, the first heat conduction film may be non-contiguous and the second heat conduction film may be interposed between portions of the non-contiguous first heat conduction film.

Abstract translation: 在形成多晶硅膜的方法中，包括多晶硅膜的薄膜晶体管和包括多晶硅膜的薄膜晶体管的制造方法，薄膜晶体管包括基板，基板上的第一导热膜， 与所述第一导热膜相邻的所述第二导热膜，所述第二导热膜的热导率低于所述第一导热膜，所述第二导热膜上的多晶硅膜和与所述第二导热膜相邻的所述第一导热膜 膜和多晶硅膜上的栅极堆叠。 第二导热膜可以在第一导热膜上，或者第一导热膜可以不连续，并且第二导热膜可以介于不连续的第一导热膜的部分之间。

公开(公告)号：US20100301324A1

公开(公告)日：2010-12-02

申请号：US12855807

申请日：2010-08-13

Applicant: Ji-sim JUNG ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK

Inventor： Ji-sim JUNG ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK

IPC: H01L51/50 ,  H01L33/00

CPC classification number: H01L21/02672 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/3244

Abstract: An organic electro-luminescent display and a method of fabricating the same include an organic light emitting diode, a driving transistor which drives the organic light emitting diode, and a switching transistor which controls an operation of the driving transistor, wherein active layers of the switching and driving transistors are crystallized using silicides having different densities such that the active layer of the driving transistor has a larger grain size than the active layer of the switching layer.

Abstract translation: 有机电致发光显示器及其制造方法包括有机发光二极管，驱动有机发光二极管的驱动晶体管和控制驱动晶体管的操作的开关晶体管，其中开关的有源层 并且使用具有不同密度的硅化物使驱动晶体管结晶，使得驱动晶体管的有源层具有比开关层的有源层更大的晶粒尺寸。

公开(公告)号：US20090291211A1

公开(公告)日：2009-11-26

申请号：US12292595

申请日：2008-11-21

Applicant: Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Kyung-seok Son ,  Ji-sim Jung

Inventor： Myung-kwan Ryu ,  Kyung-bae Park ,  Sang-yoon Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Byung-wook Yoo ,  Kyung-seok Son ,  Ji-sim Jung

IPC: C23C16/54 ,  B05B3/18 ,  B05B1/18

CPC classification number: C23C16/45565 ,  C23C16/45551 ,  C23C16/45574

Abstract: Example embodiments provide an atomic layer deposition apparatus and a method of depositing an atomic layer using the atomic layer deposition apparatus. The atomic layer deposition apparatus may include a reaction chamber, a substrate supporter installed in the reaction chamber to support a substrate, and a shower head that is disposed above the substrate supporter and has at least one nozzle set that simultaneously inject a first source gas, a second source gas, and a purge gas onto the substrate. The method of depositing an atomic layer may include moving at least one of the substrate and the shower head in a first direction and simultaneously depositing at least one first atomic layer and at least one second atomic layer on the substrate by injecting the first source gas, the second source gas, and the purge gas through the shower head while the moving operation is performed.

Abstract translation: 示例性实施例提供原子层沉积设备和使用原子层沉积设备沉积原子层的方法。 原子层沉积装置可以包括反应室，安装在反应室中以支撑基板的基板支撑件和设置在基板支撑件上方并具有至少一个同时喷射第一源气体的喷嘴组的喷淋头， 第二源气体和吹扫气体到基板上。 沉积原子层的方法可以包括沿第一方向移动衬底和淋浴头中的至少一个，并且通过注入第一源气体同时在衬底上沉积至少一个第一原子层和至少一个第二原子层， 第二源气体和通过淋浴喷头的净化气体进行移动操作。

公开(公告)号：US20090206332A1

公开(公告)日：2009-08-20

申请号：US12320701

申请日：2009-02-02

Applicant: Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

Inventor： Kyoung-Seok Son ,  Tae-Sang Kim ,  Jang-Yeon Kwon ,  Ji-Sim Jung ,  Sang-Yoon Lee ,  Myung-Kwan Ryu ,  Kyung-Bae Park ,  Byung-Wook Yoo

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/7869 ,  H01L29/42384 ,  H01L29/4908 ,  H01L29/78648

Abstract: An oxide semiconductor thin film transistor (TFT) and a method of manufacturing the oxide semiconductor TFT. The oxide semiconductor TFT includes a first gate insulating layer arranged between an oxide semiconductor channel layer and a first gate and a second gate insulating layer arranged between the channel layer and a second gate. The first and second gate insulating layers are made out of different materials and have different thicknesses. Preferably, the second gate insulating layer is silicon oxide and is thinner than the first gate insulating layer which is preferably silicon nitride. Oxide semiconductor refers to an oxide material such as Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide, In—Sn Oxide, and one of Zinc Oxide, Tin Oxide, Ga—In—Zn Oxide, In—Zn Oxide and In—Sn Oxide.

Abstract translation: 氧化物半导体薄膜晶体管（TFT）及其制造方法。 氧化物半导体TFT包括布置在氧化物半导体沟道层和第一栅极之间的第一栅极绝缘层和布置在沟道层和第二栅极之间的第二栅极绝缘层。 第一和第二栅极绝缘层由不同的材料制成并且具有不同的厚度。 优选地，第二栅极绝缘层是氧化硅并且比优选为氮化硅的第一栅极绝缘层更薄。 氧化物半导体是指氧化锌，氧化锡，Ga-In-Zn氧化物，In-Zn氧化物，In-Sn氧化物，氧化锌，氧化锡，Ga-In-Zn氧化物，In- 氧化锌和氧化铟锡。

公开(公告)号：US20090141203A1

公开(公告)日：2009-06-04

申请号：US12153657

申请日：2008-05-22

Applicant: Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

Inventor： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC: G02F1/1343

CPC classification number: G02F1/136213 ,  G02F2203/01

Abstract: A display device including an oxide semiconductor thin film transistor is provided. The display device includes at least one thin film transistor, and at least one storage capacitor. The storage capacitor includes a storage electrode formed of a transparent oxide semiconductor, and a pixel electrode over the storage electrode. The pixel electrode may be separated from the storage electrode by a desired distance.

Abstract translation: 提供了包括氧化物半导体薄膜晶体管的显示装置。 显示装置包括至少一个薄膜晶体管和至少一个存储电容器。 存储电容器包括由透明氧化物半导体形成的存储电极和存储电极之上的像素电极。 像素电极可以与存储电极分离所需的距离。