Plasma descaling of titanium and titanium alloys
    1.
    发明授权
    Plasma descaling of titanium and titanium alloys 失效
    钛和钛合金的等离子体除鳞

    公开(公告)号:US5681486A

    公开(公告)日:1997-10-28

    申请号:US606419

    申请日:1996-02-23

    IPC分类号: C23G5/00 H05H1/00

    CPC分类号: C23G5/00

    摘要: The invention provides a method of removing surface scale from a titanium or titanium alloy substrate. The method includes the steps of heating the substrate to a temperature in the range from about 100.degree. C. to about 600.degree. C., and thereafter subjecting the heated surface to a plasma formed from a gas selected from the group of consisting of CF.sub.4 and SF.sub.6. The plasma reacts with the surface scale, removing the scale, without attacking the underlying crystalline titanium or titanium alloy. Properly controlled, the plasma reaction terminates when the plasma has penetrated the scale and encounters the underlying crystalline metal. As a result, the method of the invention is capable of uniform removal of the entire surface scale of a crystalline titanium-containing substrate, without intergranular attack of the substrate.

    摘要翻译: 本发明提供了从钛或钛合金基底去除表面刻度的方法。 该方法包括以下步骤:将基底加热至约100℃至约600℃的温度,然后将加热的表面经受从由以下组成的气体形成的等离子体:CF4和 SF6。 等离子体与表面刻度反应,去除刻度,而不侵蚀下面的晶体钛或钛合金。 正确控制时,当等离子体已经穿过刻度并遇到下面的晶体金属时,等离子体反应终止。 结果,本发明的方法能够均匀地除去结晶含钛基材的整个表面氧化皮,而不会造成基板的晶间侵袭。

    Fabrication process for multichip modules using low temperature bake and
cure
    3.
    发明授权
    Fabrication process for multichip modules using low temperature bake and cure 失效
    使用低温烘烤和固化的多芯片模块的制造工艺

    公开(公告)号:US5945254A

    公开(公告)日:1999-08-31

    申请号:US768599

    申请日:1996-12-18

    摘要: A method for manufacturing a multichip module deposited substrate board utilizing alternating layers of high density thin-film metal and either preimidized or non-preimidized organic polymer insulating material wherein the insulating material is cured during manufacture using either ultraviolet radiation, ion beam radiation or electron beam radiation. This method eliminates subjecting the in-process substrate board to temperatures in excess of the recrystalization temperature of the thin-film metal, thereby eliminating the source of warpage and metal interdiffusion and corrosion at the metal to insulating material interface. This process enables successful manufacture of large format multichip module deposited substrate boards in sizes up to approximately 24 inches square.

    摘要翻译: 一种使用高密度薄膜金属交替层和预聚酰胺化或非预聚有机聚合物绝缘材料制造多芯片组件沉积衬底板的方法,其中绝缘材料在制造期间使用紫外线辐射,离子束辐射或电子束 辐射。 该方法可以消除处理中的衬底板超过薄膜金属的再结晶温度的温度,从而消除金属到绝缘材料界面处的翘曲和金属相互扩散和腐蚀。 该过程使得能够成功地制造尺寸高达约24英寸平方的大尺寸多芯片模块沉积的基板。

    Metamaterial scanning lens antenna systems and methods
    4.
    发明授权
    Metamaterial scanning lens antenna systems and methods 失效
    超材料扫描透镜天线系统及方法

    公开(公告)号:US07218285B2

    公开(公告)日:2007-05-15

    申请号:US10913109

    申请日:2004-08-05

    IPC分类号: H01Q19/06

    CPC分类号: H01Q15/0086 H01Q19/062

    摘要: The present invention is directed to systems and methods for radiating radar signals, communication signals, or other similar signals. In one embodiment, a system includes a controller that generates a control signal and an antenna coupled to the controller. The antenna includes a first component that generates at least one wave based on the generated control signal and a metamaterial lens positioned at some predefined focal length from the first component. The metamaterial lens directs the generated at least one wave.

    摘要翻译: 本发明涉及用于辐射雷达信号,通信信号或其它类似信号的系统和方法。 在一个实施例中,系统包括产生控制信号的控制器和耦合到控制器的天线。 天线包括基于所生成的控制信号产生至少一个波的第一部件和位于距离第一部件的某些预定焦距的超材料透镜。 超材料透镜引导所产生的至少一个波。

    Plasma descaling of titanium and titanium alloys
    5.
    再颁专利
    Plasma descaling of titanium and titanium alloys 失效
    钛和钛合金的等离子体除鳞

    公开(公告)号:USRE36746E

    公开(公告)日:2000-06-27

    申请号:US154926

    申请日:1998-09-16

    IPC分类号: C23G5/00 C23C22/58

    CPC分类号: C23G5/00

    摘要: The invention provides a method of removing surface scale from a titanium or titanium alloy substrate. The method includes the steps of heating the substrate to a temperature in the range from about 100.degree. C. to about 600.degree. C., and thereafter subjecting the heated surface to a plasma formed from a gas selected from the group of consisting of CF.sub.4 and SF.sub.6. The plasma reacts with the surface scale, removing the scale, without attacking the underlying crystalline titanium or titanium alloy. Properly controlled, the plasma reaction terminates when the plasma has penetrated the scale, and encounters the underlying crystalline metal. As a result, the method of the invention is capable of uniform removal of the entire surface scale of a crystalline titanium-containing substrate, without intergranular attack of the substrate.

    摘要翻译: 本发明提供了从钛或钛合金基底去除表面刻度的方法。 该方法包括以下步骤:将基底加热至约100℃至约600℃的温度,然后将加热的表面经受从由以下组成的气体形成的等离子体:CF4和 SF6。 等离子体与表面刻度反应,去除刻度,而不侵蚀下面的晶体钛或钛合金。 正确控制时,当等离子体已经渗透到刻度上并且遇到下面的晶体金属时,等离子体反应终止。 结果,本发明的方法能够均匀地除去结晶含钛基材的整个表面氧化皮,而不会造成基板的晶间侵袭。

    Plasma descaling of metals
    6.
    发明授权
    Plasma descaling of metals 失效
    金属等离子体除锈

    公开(公告)号:US6010635A

    公开(公告)日:2000-01-04

    申请号:US975242

    申请日:1997-11-21

    IPC分类号: C23G5/00 H05H1/00

    CPC分类号: C23G5/00 H01J2237/335

    摘要: The plasma descaling process of the present invention removes surface oxides selectively from structural metal surfaces, especially titanium and its alloys, and, with appropriate control of the reaction temperature, is self-limiting to avoid cracking problems otherwise associated with intergranular attack. In a preferred embodiment of the present invention, a fluoride plasma reacts with surface oxides on a titanium alloy to remove scale and alpha case in a temperature controlled chamber without attacking the underlying crystalline metal to cause intergranular attack. Properly controlled by regulating the chamber temperature, the plasma reaction terminates when the plasma has removed the surface oxides and encounters the underlying crystalline metal. The product is a metal surface free of scale and alpha case and free of intergranular attack. The plasma descaling process replaces conventional metal finishing processes, such as chemical milling or etching.

    摘要翻译: 本发明的等离子体除垢方法从结构金属表面,特别是钛及其合金中选择性地去除表面氧化物,并且通过适当控制反应温度,是自限制的,以避免与晶间侵蚀有关的裂纹问题。 在本发明的优选实施方案中,氟化物等离子体与钛合金上的表面氧化物反应以除去温度控制室中的氧化皮和α壳,而不侵蚀下面的晶体金属以引起晶间侵蚀。 通过调节室温来适当控制,当等离子体已经除去表面氧化物并遇到下面的晶体金属时,等离子体反应终止。 该产品是没有鳞片和α壳的金属表面,没有晶间侵袭。 等离子体除垢过程代替常规的金属精加工工艺,例如化学研磨或蚀刻。