公开(公告)号：US07675718B2

公开(公告)日：2010-03-09

申请号：US11588564

申请日：2006-10-27

申请人： Jei-Wei Chang ,  Koichi Terunuma ,  Youfeng Zheng ,  Kochan Ju

发明人： Jei-Wei Chang ,  Koichi Terunuma ,  Youfeng Zheng ,  Kochan Ju

IPC分类号： G11B5/39

CPC分类号： B82Y25/00 ,  B82Y10/00 ,  G11B5/3932 ,  G11B2005/3996 ,  Y10T29/49021 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

摘要： The problem of increased edge sensitivity associated with the reduction of the spacing between bias magnets in a CPP head has been solved by limiting the width of the bias cancellation layer and by adding an extra layer of insulation to ensure that current through the device flows only through its central area, thereby minimizing its edge reading sensitivity.

摘要翻译： 通过限制偏置消除层的宽度并添加额外的绝缘层来解决与CPP头中的偏置磁体之间的间隔减小相关联的增加的边缘灵敏度的问题，以确保通过器件的电流仅流过 其中心区域，从而最小化其边缘读取灵敏度。

公开(公告)号：US07453720B2

公开(公告)日：2008-11-18

申请号：US11138609

申请日：2005-05-26

申请人： Kochan Ju ,  Jei-Wei Chang

发明人： Kochan Ju ,  Jei-Wei Chang

IPC分类号： G11C11/02

CPC分类号： H01L27/222 ,  G11C11/15 ,  G11C11/5607 ,  H01L27/228

摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each stack is located at an intersection region between the two orthogonal write lines. The cells are stacked in pairs, with the cells in each pair having their easy axes of magnetization aligned substantially parallel to one another and nonparallel with the X and Y axes. The cells in each pair have their free layers magnetically biased in opposite directions. Because the free layer of each cell in a pair is biased in a direction opposite to the bias direction of the free layer of the other cell, one cell in a pair can be toggle written without toggle writing the other cell in the pair. The bias fields on the free layers reduces the required switching field for each cell, which results in less write current and a lower-power toggling MRAM.

摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。 每个堆栈位于两个正交写入线之间的交叉区域。 电池成对堆叠，每对中的电池具有易于相互平行的磁化轴，并且与X轴和Y轴不平行。 每对中的电池具有以相反方向磁偏置的自由层。 因为一对中的每个单元的自由层在与另一个单元的自由层的偏置方向相反的方向上被偏置，所以一对单元可以被切换而不用切换写入该对中的另一个单元。 自由层上的偏置场减少了每个单元所需的切换场，这导致较少的写入电流和较低功率的切换MRAM。

公开(公告)号：US07285836B2

公开(公告)日：2007-10-23

申请号：US11075900

申请日：2005-03-09

申请人： Kochan Ju ,  Jei-Wei Chang

发明人： Kochan Ju ,  Jei-Wei Chang

IPC分类号： H01L29/82 ,  H01L29/94 ,  G11C11/50

CPC分类号： H01L27/226 ,  G11C11/16

摘要： A magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate, with each memory stack having two memory cells stacked along the Z axis and each memory cell having an associated biasing layer. Each biasing layer reduces the switching field of its associated cell by applying a biasing field along the hard-axis of magnetization of the free layer of its associated cell. The free layers in the two cells in each stack have their in-plane easy axes of magnetization aligned parallel to one another. Each biasing layer has its in-plane magnetization direction oriented perpendicular to the easy axis of magnetization (and thus parallel to the hard axis) of the free layer in its associated cell. The hard-axis biasing fields generated by the two biasing layers are in opposite directions.

摘要翻译： 磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储器堆栈具有沿Z轴堆叠的两个存储器单元，并且每个存储器单元具有相关联的偏置层。 每个偏置层通过沿其相关联的单元的自由层的硬磁化轴施加偏置场来减小其相关单元的切换场。 每个堆叠中的两个电池中的自由层具有平行彼此平行的平面内容易的磁化轴。 每个偏置层的面内磁化方向垂直于其相关电池中的自由层的易磁化轴（并且因此平行于硬轴）定向。 由两个偏压层产生的硬轴偏置磁场处于相反的方向。

公开(公告)号：US07162791B2

公开(公告)日：2007-01-16

申请号：US11011995

申请日：2004-12-14

申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

IPC分类号： G11B5/127 ,  G11B5/83 ,  H04R31/00

CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： Currently, in a process of manufacturing a top spin valve structure, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer.

摘要翻译： 目前，在制造顶部自旋阀结构的过程中，自旋阀头的屏蔽与屏蔽间隔不能低于约800，这主要是由于传感器与铅的短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。

公开(公告)号：US20060267056A1

公开(公告)日：2006-11-30

申请号：US11138609

申请日：2005-05-26

申请人： Kochan Ju ,  Jei-Wei Chang

发明人： Kochan Ju ,  Jei-Wei Chang

IPC分类号： H01L29/94

CPC分类号： H01L27/222 ,  G11C11/15 ,  G11C11/5607 ,  H01L27/228

摘要： A “toggling” type of magnetic random access memory (MRAM) has memory stacks arranged in the X-Y plane on the MRAM substrate with each memory stack having a plurality of toggle memory cells stacked along the Z axis. Each stack is located at an intersection region between the two orthogonal write lines. The cells are stacked in pairs, with the cells in each pair having their easy axes of magnetization aligned substantially parallel to one another and nonparallel with the X and Y axes. The cells in each pair have their free layers magnetically biased in opposite directions. Because the free layer of each cell in a pair is biased in a direction opposite to the bias direction of the free layer of the other cell, one cell in a pair can be toggle written without toggle writing the other cell in the pair. The bias fields on the free layers reduces the required switching field for each cell, which results in less write current and a lower-power toggling MRAM.

摘要翻译： “切换”型磁性随机存取存储器（MRAM）具有布置在MRAM衬底上的X-Y平面中的存储器堆叠，每个存储堆栈具有沿着Z轴堆叠的多个触发存储器单元。 每个堆栈位于两个正交写入线之间的交叉区域。 电池成对堆叠，每对中的电池具有易于相互平行的磁化轴，并且与X轴和Y轴不平行。 每对中的电池具有以相反方向磁偏置的自由层。 因为一对中的每个单元的自由层在与另一个单元的自由层的偏置方向相反的方向上被偏置，所以一对单元可以被切换而不用切换写入该对中的另一个单元。 自由层上的偏置场减少了每个单元所需的切换场，这导致较少的写入电流和较低功率的切换MRAM。

公开(公告)号：US07060321B2

公开(公告)日：2006-06-13

申请号：US11011994

申请日：2004-12-14

申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

IPC分类号： B05D5/12 ,  G11B5/84

CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

摘要翻译： 目前，自旋阀头的屏蔽到屏蔽分离不能低于约800，这主要是由于传感器到引线短路问题。 现在已经通过在自旋阀传感器的顶部或底部（或两个）侧上插入高磁导率，高电阻率的薄膜屏蔽来克服这个问题。 需要大于约500的磁导率，其电阻率大约为自由层的电阻率的约5倍，薄膜屏蔽层的电阻值大于自由层的4倍 层。 描述本发明的五个实施例。

公开(公告)号：US20050094321A1

公开(公告)日：2005-05-05

申请号：US11011957

申请日：2004-12-14

申请人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

发明人： Kochan Ju ,  Cheng Horng ,  Youfeng Zheng ,  Simon Liao ,  Jei-Wei Chang

IPC分类号： G01R33/09 ,  B05D7/00 ,  G11B5/127 ,  G11B5/187 ,  G11B5/29 ,  G11B5/31 ,  G11B5/33 ,  G11B5/39 ,  H01F10/16 ,  H01F10/30 ,  H01F10/32 ,  H01L43/08 ,  H01L43/12 ,  H04R31/00

CPC分类号： G11B5/33 ,  G11B5/29 ,  G11B5/31 ,  Y10T29/49037 ,  Y10T29/49041 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49052

摘要： Currently, the shield-to-shield separation of a spin valve head cannot be below about 800 Å, mainly due to sensor-to-lead shorting problems. This problem has now been overcome by inserting a high permeability, high resistivity, thin film shield on the top or bottom (or both) sides of the spin valve sensor. A permeability greater than about 500 is required together with a resistivity about 5 times greater than that of the free layer and an MrT value for the thin film shield that is 4 times greater than that of the free layer. Five embodiments of the invention are described.

公开(公告)号：US06627390B2

公开(公告)日：2003-09-30

申请号：US09893225

申请日：2001-06-28

申请人： Xue Hua Wu ,  Yi-Chun Liu ,  Yining Hu ,  Jei-Wei Chang ,  Kochan Ju

发明人： Xue Hua Wu ,  Yi-Chun Liu ,  Yining Hu ,  Jei-Wei Chang ,  Kochan Ju

IPC分类号： G03C500

CPC分类号： G11B5/3163 ,  G11B5/3116 ,  G11B5/3967 ,  Y10T29/49032

摘要： A method for forming a plated layer. There is first provided a substrate. There is then formed over the substrate a masking frame employed for masking frame plating a masking frame plated layer within the masking frame, where the masking frame is fabricated to provide an overhang of an upper portion of the masking frame spaced further from the substrate with respect to a lower portion of the masking frame spaced closer to the substrate. Finally, there is then plated the masking frame plated layer within the masking frame. The method is useful for forming masking frame plated magnetic pole tip stack layers with enhanced planarity dimensional control within magnetic transducer elements.

摘要翻译： 一种形成镀层的方法。 首先提供基板。 然后在衬底上形成掩蔽框架，用于掩蔽在屏蔽框架内对屏蔽框架镀层进行屏蔽电镀，其中制造掩模框架以提供与衬底间隔开的掩蔽框架的上部的突出部分， 到掩蔽框架的较靠近衬底间隔的部分。 最后，然后将屏蔽框架镀层电镀在屏蔽框架内。 该方法对于在磁换能器元件内形成具有增强的平面度尺寸控制的掩模框架电镀磁极尖端堆叠层是有用的。

公开(公告)号：US06367146B1

公开(公告)日：2002-04-09

申请号：US08635097

申请日：1996-04-17

申请人： Cherng-Chyi Han ,  David Hernandez ,  Jei-Wei Chang ,  Shou-Chen Kao

发明人： Cherng-Chyi Han ,  David Hernandez ,  Jei-Wei Chang ,  Shou-Chen Kao

IPC分类号： G11B5127

CPC分类号： G11B5/3967 ,  G11B5/3116 ,  G11B5/3163 ,  Y10T29/49046

摘要： A method comprises the step of providing a read-write element on a wafer including at least one magnetoresistive stripe, providing a shared pole layer above the magnetoresistive stripe, and planarizing the shared pole layer. Thereafter, a top pole layer is formed above the shared pole layer. Together, the shared and top pole layers form the write element. Because the shared pole layer is planarized, the gap portion of the write element between the shared and top pole layers is flat. Because of this, improved recording density can be achieved.

摘要翻译： 一种方法包括在包括至少一个磁阻条纹的晶片上提供读写元件的步骤，在磁阻条上设置共享极层，并平坦化共享极层。 此后，在共享极层上形成顶极层。 一起，共享和顶极层形成写入元件。 由于共用极层被平坦化，所以共用极层和顶极层之间的写入元件的间隙部分是平坦的。 因此，可以实现改善的记录密度。

公开(公告)号：US06322640B1

公开(公告)日：2001-11-27

申请号：US09489969

申请日：2000-01-24

申请人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang ,  Jei-Wei Chang ,  Cherng-Chyi Han ,  Kochan Ju

发明人： Rongfu Xiao ,  Chyu-Jiuh Torng ,  Hui-Chuan Wang ,  Jei-Wei Chang ,  Cherng-Chyi Han ,  Kochan Ju

IPC分类号： H01F4100

CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/3268 ,  H01F41/302 ,  H01L43/12 ,  Y10T29/49034

摘要： A method for forming a magnetically biased magnetoresistive (MR) layer. There is first provided a substrate. There is then formed over the substrate a ferromagnetic magnetoresistive (MR) material layer. There is then forming contacting the ferromagnetic magnetoresistive (MR) material layer a magnetic material layer formed of a first crystalline phase, where the magnetic material layer is formed of a crystalline multiphasic magnetic material having the first crystalline phase which does not appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer and a second crystalline phase which does appreciably antiferromagnetically exchange couple with the ferromagnetic magnetoresistive (MR) material layer. There is then annealed thermally while employing a first thermal annealing method employing an extrinsic magnetic bias field the magnetic material layer formed of the first crystalline phase to form a magnetically aligned magnetic material layer formed of the first crystalline phase. Finally, there is then annealed thermally while employing a second thermal annealing method without employing an extrinsic magnetic bias field the magnetically aligned magnetic material layer formed of the first crystalline phase to form an antiferromagnetically coupled magnetically aligned magnetic material layer formed of the second crystalline phase. The method may be employed for forming non-parallel antiferromagnetically biased multiple magnetoresistive (MR) layer magnetoresistive (MR) sensor elements while employing a single antiferromagnetic material.

摘要翻译： 一种用于形成磁偏置磁阻（MR）层的方法。 首先提供基板。 然后在衬底上形成铁磁磁阻（MR）材料层。 然后，形成使铁磁性磁阻（MR）材料层与由第一结晶相形成的磁性材料层接触，其中，磁性材料层由结晶多相磁性材料形成，该结晶多相磁性材料具有不明显地反铁磁性交换耦合的第一结晶相 铁磁磁阻（MR）材料层和第二结晶相，其明显地与铁磁性磁阻（MR）材料层反铁磁交换耦合。 然后在使用由第一结晶相形成的磁性材料层的外部磁偏置场的第一热退火方法进行退火，形成由第一结晶相形成的磁性取向的磁性材料层。 最后，在不使用由第一结晶相形成的磁性取向的磁性材料层的外部磁偏置场的情况下，采用第二热退火方法进行退火，形成由第二结晶相形成的反铁磁耦合的磁性取向的磁性材料层。 该方法可以用于在使用单个反铁磁材料的同时形成非平行的反铁磁偏振多磁阻（MR）层磁阻（MR）传感器元件。