Light emitting diode package
    2.
    发明授权
    Light emitting diode package 有权
    发光二极管封装

    公开(公告)号:US08558268B2

    公开(公告)日:2013-10-15

    申请号:US12343452

    申请日:2008-12-23

    IPC分类号: H01L33/00

    摘要: Provided is a light emitting diode (LED) package. The LED package includes a package main body, first and second electrode structures, first and second LED chips, and first and second resin packing parts. The package main body includes a concave portion and a barrier wall dividing the concave portion into at least first and second accommodation recesses. The first and second electrode structures are formed at the package main body and are exposed at bottom surfaces of the first and second accommodation recesses respectively. The first and second LED chips are electrically connected to the first and second electrode structures are respectively mounted on the bottom surfaces of the first and second accommodation recesses. The first and second resin packing parts include at least one fluorescent material and are formed in the first and second accommodation recesses for packing the first and second LED chips.

    摘要翻译: 提供了一种发光二极管(LED)封装。 LED封装包括封装主体,第一和第二电极结构,第一和第二LED芯片以及第一和第二树脂封装部件。 包装主体包括凹部和将凹部分成至少第一和第二容纳凹部的阻挡壁。 第一和第二电极结构形成在封装主体处,分别暴露在第一和第二容纳凹槽的底表面处。 第一和第二LED芯片电连接到第一和第二电极结构分别安装在第一和第二容纳凹部的底表面上。 第一和第二树脂包装部分包括至少一种荧光材料,并且形成在用于包装第一和第二LED芯片的第一和第二容纳凹部中。

    Door of refrigerator and method for manufacturing the same
    3.
    发明授权
    Door of refrigerator and method for manufacturing the same 有权
    冰箱门和制造方法

    公开(公告)号:US08336974B2

    公开(公告)日:2012-12-25

    申请号:US12385262

    申请日:2009-04-02

    IPC分类号: A47B96/04

    摘要: In a refrigerator door in which a decoration member is mounted to a door frame using a foam material, the foam material fills a space formed between the decoration member mounted to a front side of the door frame and a rear panel mounted to a rear side of the door frame. Accordingly, the decoration member can be fixed to the door frame through direct contact with the foam material.

    摘要翻译: 在其中使用泡沫材料将装饰构件安装到门框的冰箱门中,泡沫材料填充安装在门框的前侧的装饰构件和安装到门框的后侧的后面板之间形成的空间 门框。 因此,装饰构件可以通过与泡沫材料直接接触而固定在门框上。

    Refrigerator having sub door and manufacturing method of sub door
    4.
    发明申请
    Refrigerator having sub door and manufacturing method of sub door 有权
    具有子门的制冷器和子门的制造方法

    公开(公告)号:US20110094256A1

    公开(公告)日:2011-04-28

    申请号:US12805918

    申请日:2010-08-24

    摘要: A refrigerator having a sub door which reduces energy loss and a method of manufacturing method the sub door. The refrigerator includes a main body provided with storage chambers formed therein, doors opening and closing the storage chambers, and provided with an opening, a sub door to open and close the opening, and a cooling unit provided on the rear surface of the sub door. When the sub door is opened, cool air of the cooling unit is transmitted to a stored article put on the rear surface of the sub door, and when the sub door is closed, relatively uniform temperature distribution in the storage chamber is achieved and thus storage performance of the refrigerator is improved.

    摘要翻译: 具有减小能量损失的副门的冰箱和制造子门的方法。 冰箱包括设置有形成在其中的存储室的主体,打开和关闭存储室的门,并设置有开口,用于打开和关闭开口的副门,以及设置在副门的后表面上的冷却单元 。 当子门打开时,冷却单元的冷却空气被传送到放置在副门的后表面上的储存物品,当子门关闭时,存储室中的温度分布相对均匀,从而存储 提高了冰箱的性能。

    Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same
    5.
    发明授权
    Method of growing semi-polar nitride single crystal thin film and method of manufacturing nitride semiconductor light emitting diode using the same 有权
    生长半极性氮化物单晶薄膜的方法和使用其制造氮化物半导体发光二极管的方法

    公开(公告)号:US07790584B2

    公开(公告)日:2010-09-07

    申请号:US12246594

    申请日:2008-10-07

    IPC分类号: H01L21/36

    摘要: A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 22) plane.

    摘要翻译: 生长半极性氮化物单晶薄膜的方法。 该方法包括在m面六方晶系单晶衬底上形成半极化氮化物单晶基底层,在半极化氮化物单晶基底层上形成电介质图案层,并生长半极化氮化物单晶薄膜 在具有横向方向上具有电介质图案层的半极性氮化物单晶基底层上的膜。 半极性氮化物单晶薄膜在横向上的生长包括主要在横向上生长半极性氮化物单晶薄膜,使得半极性氮化物单晶基底层上的生长面的一部分具有 a平面,并且在横向上二次生长半极性氮化物单晶薄膜,使得主要生长的半极性氮化物单晶薄膜的侧壁被组合成具有(1122)面。

    Method of manufacturing vertical light emitting device
    6.
    发明授权
    Method of manufacturing vertical light emitting device 有权
    制造垂直发光装置的方法

    公开(公告)号:US07781246B2

    公开(公告)日:2010-08-24

    申请号:US11882259

    申请日:2007-07-31

    IPC分类号: H01L21/00

    CPC分类号: H01L33/0079 H01L33/44

    摘要: Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.

    摘要翻译: 提供一种垂直发光装置的制造方法。 制造垂直发光器件的方法可以包括在衬底上形成包括n型半导体层,有源层和p型半导体层的发射层,形成将发光层划分成发光器件的第一沟槽 其中发射层保留在第一沟槽的下部上的单元到期望的或可选的预定厚度,在发射层上形成钝化层,在p型半导体层上形成p型电极 发射层,在钝化层和p型电极上形成金属支撑层,去除衬底,当发射层的表面通过去除衬底而暴露时去除发射层的剩余部分,形成n型 电极,并且切割金属支撑层以将发光层划分为发光器件单元。

    Door of refrigerator and method for manufacturing the same
    8.
    发明申请
    Door of refrigerator and method for manufacturing the same 有权
    冰箱门和制造方法

    公开(公告)号:US20100031580A1

    公开(公告)日:2010-02-11

    申请号:US12385262

    申请日:2009-04-02

    IPC分类号: E06B1/04 B21D47/00

    摘要: A refrigerator door in which a decoration member is mounted to a door frame using a foam material is disclosed. In the refrigerator door, the foam material fills a space formed between the decoration member mounted to a front side of the door frame and a rear panel mounted to a rear side of the door frame. Accordingly, the decoration member can be fixed to the door frame through direct contact with the foam material.

    摘要翻译: 公开了一种使用泡沫材料将装饰构件安装在门框上的冰箱门。 在冰箱门中,泡沫材料填充安装在门框的前侧的装饰构件和安装在门框的后侧的后面板之间形成的空间。 因此,装饰构件可以通过与泡沫材料直接接触而固定在门框上。

    Semiconductor light emitting device having textured structure and method of manufacturing the same
    9.
    发明授权
    Semiconductor light emitting device having textured structure and method of manufacturing the same 有权
    具有纹理结构的半导体发光器件及其制造方法

    公开(公告)号:US07655959B2

    公开(公告)日:2010-02-02

    申请号:US11293273

    申请日:2005-12-05

    IPC分类号: H01L21/00

    摘要: A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.

    摘要翻译: 提供具有纹理结构的半导体发光二极管及其制造方法。 半导体发光二极管包括形成为纹理结构的第一半导体层,形成在图案化的第一半导体层的纹理结构之间的中间层,以及顺序地形成在第一半导体层上的第二半导体层,有源层和第三半导体层 第一半导体层和中间层。

    Semiconductor light emitting diode having efficiency and method of manufacturing the same
    10.
    发明授权
    Semiconductor light emitting diode having efficiency and method of manufacturing the same 有权
    具有效率的半导体发光二极管及其制造方法

    公开(公告)号:US07642561B2

    公开(公告)日:2010-01-05

    申请号:US11294403

    申请日:2005-12-06

    IPC分类号: H01L29/22

    摘要: Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.

    摘要翻译: 提供了一种在基板上形成纹理结构的半导体发光二极管。 在制造半导体发光二极管的方法中,在基板上形成金属层,通过阳极氧化金属层形成具有孔的金属氧化物层。 金属氧化物层本身可以用作纹理结构图案,或者纹理结构图案可以通过在基板中形成孔或在对应于金属氧化物层的孔的金属氧化物层下面的材料层来形成。 通过在纹理结构图案上依次形成第一半导体层,有源层和第二半导体层来完成半导体发光二极管的制造。