摘要:
The present invention relates to microbial variants producing homo-succinic acid at high yields and a method for producing homo-succinic acid using the same, more particularly, to a microbial variant constructed by disrupting a lactate dehydro-genase-encoding gene (idhA) and an acetate kinase-encoding gene (ackA), as well as a method for producing homo-succinic acid at high concentration, which comprises culturing such variants using glucose as a carbon source in anaerobic conditions.
摘要:
Provided is a light emitting diode (LED) package. The LED package includes a package main body, first and second electrode structures, first and second LED chips, and first and second resin packing parts. The package main body includes a concave portion and a barrier wall dividing the concave portion into at least first and second accommodation recesses. The first and second electrode structures are formed at the package main body and are exposed at bottom surfaces of the first and second accommodation recesses respectively. The first and second LED chips are electrically connected to the first and second electrode structures are respectively mounted on the bottom surfaces of the first and second accommodation recesses. The first and second resin packing parts include at least one fluorescent material and are formed in the first and second accommodation recesses for packing the first and second LED chips.
摘要:
In a refrigerator door in which a decoration member is mounted to a door frame using a foam material, the foam material fills a space formed between the decoration member mounted to a front side of the door frame and a rear panel mounted to a rear side of the door frame. Accordingly, the decoration member can be fixed to the door frame through direct contact with the foam material.
摘要:
A refrigerator having a sub door which reduces energy loss and a method of manufacturing method the sub door. The refrigerator includes a main body provided with storage chambers formed therein, doors opening and closing the storage chambers, and provided with an opening, a sub door to open and close the opening, and a cooling unit provided on the rear surface of the sub door. When the sub door is opened, cool air of the cooling unit is transmitted to a stored article put on the rear surface of the sub door, and when the sub door is closed, relatively uniform temperature distribution in the storage chamber is achieved and thus storage performance of the refrigerator is improved.
摘要:
A method of growing a semi-polar nitride single crystal thin film. The method includes forming a semi-polar nitride single crystal base layer on an m-plane hexagonal system single crystal substrate, forming a dielectric pattern layer on the semi-polar nitride single crystal base layer, and growing the semi-polar nitride single crystal thin film on the semi-polar nitride single crystal base layer having the dielectric pattern layer in a lateral direction. The growing of the semi-polar nitride single crystal thin film in a lateral direction includes primarily growing the semi-polar nitride single crystal thin film in the lateral direction such that part of a growth plane on the semi-polar nitride single crystal base layer has an a-plane, and secondarily growing the semi-polar nitride single crystal thin film in the lateral direction such that sidewalls of the primarily grown semi-polar nitride single crystal thin film are combined to have a (11 22) plane.
摘要:
Provided is a method of manufacturing a vertical light emitting device. The method of manufacturing the vertical light emitting device may include forming an emissive layer including a n-type semiconductor layer, an active layer, and a p-type semiconductor layer on a substrate, forming a first trench dividing the emissive layer into light emitting device units in which the emissive layer remains on the lower part of the first trench to a desired, or alternatively, a predetermined thickness, forming a passivation layer on the emissive layer, forming a p-type electrode on the p-type semiconductor layer of the emissive layer, forming a metal supporting layer on the passivation layer and the p-type electrode, removing the substrate, removing a remaining portion of the emissive layer when the surface of the emissive layer is exposed by removing the substrate, forming a n-type electrode on the n-type semiconductor layer of the emissive layer, and cutting the metal supporting layer to divide the emissive layer into the light emitting device units.
摘要:
The present invention relates to microbial variants producing homo-succinic acid at high yields and a method for producing homo-succinic acid using the same, more particularly, to a microbial variant constructed by disrupting a lactate dehydro-genase-encoding gene (idhA) and an acetate kinase-encoding gene (ackA), as well as a method for producing homo-succinic acid at high concentration, which comprises culturing such variants using glucose as a carbon source in anaerobic conditions.
摘要:
A refrigerator door in which a decoration member is mounted to a door frame using a foam material is disclosed. In the refrigerator door, the foam material fills a space formed between the decoration member mounted to a front side of the door frame and a rear panel mounted to a rear side of the door frame. Accordingly, the decoration member can be fixed to the door frame through direct contact with the foam material.
摘要:
A semiconductor light emitting diode having a textured structure and a method of manufacturing the same are provided. The semiconductor light emitting diode includes a first semiconductor layer formed into a textured structure, an intermediate layer formed between the textured structures of the patterned first semiconductor layer, and a second semiconductor layer, an active layer, and a third semiconductor layer sequentially formed on the first semiconductor layer and the intermediate layer.
摘要:
Provided is a semiconductor light emitting diode having a textured structure formed on a substrate. In a method of manufacturing the semiconductor light emitting diode, a metal layer is formed on the substrate, and a metal oxide layer having holes is formed by anodizing the metal layer. The metal oxide layer itself can be used as a textured structure pattern, or the textured structure pattern can be formed by forming holes in the substrate or a material layer under the metal oxide layer corresponding to the holes of the metal oxide layer. The manufacture of the semiconductor light emitting diode is completed by sequentially forming a first semiconductor layer, an active layer, and a second semiconductor layer on the textured structure pattern.