摘要:
Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
摘要:
A confinement ring coupling arrangement for coupling, in a plasma processing chamber, a confinement ring to a plunger. The plunger is configured to move the confinement ring to deploy and stow the confinement ring to facilitate processing of a substrate within the plasma processing chamber. The confinement ring coupling arrangement includes a hanger adapter having a locking head, the hanger adapter being configured to be coupled with the plunger. The confinement ring coupling arrangement further includes a hanging bore disposed in the confinement ring and configured to receive the locking head and to secure the locking head within the hanging bore during stowing and deployment of the confinement ring, wherein a diameter of the locking head is sufficiently smaller than a cross-section dimension of the hanging bore to prevent a sidewall of the locking head from scraping against a sidewall of the hanging bore during the stowing and deployment of the confinement ring.
摘要:
Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
摘要:
Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
摘要:
A confinement ring support assembly for coupling together a plurality of confinement rings in a plasma processing chamber. The confinement ring support assembly includes a post having first end and a second end. The post further includes a first lip having an associated first sliding surface, and a second lip having an associated second sliding surface. The first lip is disposed at a first position on the post, the second lip being disposed at a second position at a different arc relative to the first location on the post, the second position being disposed between the first position and the first end along a longitudinal axis of the post. The confinement ring support assembly further includes a first washer configured to move slidably from the first lip past the second lip toward the first end of the post. The first washer has a first cut formed in its interior opening that is configured to engage with the first lip to prevent the first washer from sliding past the first lip in a direction away from the first end and to engage with the first sliding surface associated with the first lip to constrain a rotational movement of the first washer as the washer moves longitudinally along the post.
摘要:
Apparatuses are provided for controlling flow conductance of plasma formed in a plasma processing apparatus that includes an upper electrode opposite a lower electrode to form a gap therebetween. The lower electrode is adapted to support a substrate and coupled to a RF power supply. Process gas injected into the gap is excited into the plasma state during operation. The apparatus includes a ground ring that concentrically surrounds the lower electrode and has a set of slots formed therein, and a mechanism for controlling gas flow through the slots.
摘要:
Wafer area pressure rings used to confine plasma in plasma processing chambers which are manufactured with bores therein such that replacement of the pressure rings during routine or repair maintenance is significantly eased. The bores allows the pressure rings to be installed by simply aligning the bores under hanging adapters which are connected to the ceiling of the chamber, lifting the rings such that the hanging adapters enter the ring, turning or twisting the entire apparatus a miniscule amount, and then lowering the ring apparatus on the hanging apparatus, thereby locking the rings in place.