公开(公告)号：US09871055B1

公开(公告)日：2018-01-16

申请号：US15462933

申请日：2017-03-20

申请人： Phil-ouk Nam ,  Sung-gil Kim ,  Ji-hoon Choi ,  Seul-ye Kim ,  Jae-young Ahn ,  Hong-suk Kim

发明人： Phil-ouk Nam ,  Sung-gil Kim ,  Ji-hoon Choi ,  Seul-ye Kim ,  Jae-young Ahn ,  Hong-suk Kim

IPC分类号： H01L27/115 ,  H01L27/11582 ,  H01L27/11556 ,  H01L29/78 ,  H01L27/1157

CPC分类号： H01L27/11582 ,  H01L27/11556 ,  H01L27/1157 ,  H01L29/7827

摘要： A vertical-type memory device may include a channel layer vertically extending on a substrate, a ground selection transistor at a side of the channel layer on the substrate, the ground selection transistor including a first gate insulation portion and a first replacement gate electrode, an etch control layer on the first replacement gate electrode, and a memory cell on the etch control layer, the memory cell including a second gate insulation portion and a second replacement gate electrode. The etch control layer may include a polysilicon layer doped with carbon, N-type impurities, or P-type impurities, or may include a polysilicon oxide layer comprising carbon, N-type impurities, or P-type impurities. A thickness of the first replacement gate electrode may be the same as a thickness of the second replacement gate electrode, or the first replacement gate electrode may be thicker than the second.

公开(公告)号：US09775192B2

公开(公告)日：2017-09-26

申请号：US13221496

申请日：2011-08-30

申请人： Cheol-hoi Kim ,  Hun Lee ,  Ji-hoon Choi ,  Joo-yoon Bae

发明人： Cheol-hoi Kim ,  Hun Lee ,  Ji-hoon Choi ,  Joo-yoon Bae

IPC分类号： H04W88/04 ,  H04W84/14 ,  H04W88/06

CPC分类号： H04W88/04 ,  H04W4/00 ,  H04W84/14 ,  H04W88/06

摘要： A method of sharing a wireless data service, including receiving, by a first terminal, a wireless data service share request from a second terminal, checking, by the first terminal, available wireless data service remaining amount information, and transmitting, by the first terminal, a response to the wireless data service share request to the second terminal based on the checked wireless data service remaining amount information. Another such sharing method includes requesting, by a second terminal, wireless data service remaining amount information available by a first terminal from the first terminal, transmitting, by the second terminal, a wireless data service share request to the first terminal based on the wireless data service remaining amount information received from the first terminal, and receiving, by the second terminal, a response to the wireless data service share request from the first terminal.

公开(公告)号：US09490371B2

公开(公告)日：2016-11-08

申请号：US14539043

申请日：2014-11-12

申请人： Young-Jin Noh ,  Bio Kim ,  Kwangmin Park ,  Jaeyoung Ahn ,  SeungHyun Lim ,  JaeHo Choi ,  Jumi Yun ,  Ji-Hoon Choi

发明人： Young-Jin Noh ,  Bio Kim ,  Kwangmin Park ,  Jaeyoung Ahn ,  SeungHyun Lim ,  JaeHo Choi ,  Jumi Yun ,  Ji-Hoon Choi

IPC分类号： H01L29/792 ,  H01L29/66 ,  H01L27/115

CPC分类号： H01L29/7926 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792

摘要： A nonvolatile memory device includes a gate structure including inter-gate insulating patterns that are vertically stacked on a substrate and gate electrodes interposed between the inter-gate insulating patterns, a vertical active pillar connected to the substrate through the gate structure, a charge-storing layer between the vertical active pillar and the gate electrode, a tunnel insulating layer between the charge-storing layer and the vertical active pillar, and a blocking insulating layer between the charge-storing layer and the gate electrode. The charge-storing layer include first and second charge-storing layers that are adjacent to the blocking insulating layer and the tunnel insulating layer, respectively. The first charge-storing layer includes a silicon nitride layer, and the second charge-storing layer includes a silicon oxynitride layer.

摘要翻译： 非易失性存储器件包括栅极结构，栅极结构包括垂直堆叠在衬底上的栅极间绝缘图案和介于栅间绝缘图案之间的栅极电极，通过栅极结构连接到衬底的垂直有源柱，电荷存储 垂直有源柱和栅电极之间的层，电荷存储层和垂直有源柱之间的隧道绝缘层，以及电荷存储层和栅电极之间的阻挡绝缘层。 电荷存储层包括分别与隔离绝缘层和隧道绝缘层相邻的第一和第二电荷存储层。 第一电荷存储层包括氮化硅层，第二电荷存储层包括氮氧化硅层。

公开(公告)号：US09428853B2

公开(公告)日：2016-08-30

申请号：US13483361

申请日：2012-05-30

申请人： Hyun Mook Kim ,  Doo Pil Kim ,  Je Hong Min ,  Kalo Jin Jun ,  Yong Jong Park ,  Jae Ryong Park ,  Dong Pil Seo ,  Sang Hyeok Lee ,  In Cheol Jang ,  Sang Yeon Pyo ,  Jung Hee Lee ,  Ji Hoon Choi ,  Seung Oh Kim

发明人： Hyun Mook Kim ,  Doo Pil Kim ,  Je Hong Min ,  Kalo Jin Jun ,  Yong Jong Park ,  Jae Ryong Park ,  Dong Pil Seo ,  Sang Hyeok Lee ,  In Cheol Jang ,  Sang Yeon Pyo ,  Jung Hee Lee ,  Ji Hoon Choi ,  Seung Oh Kim

IPC分类号： D06F23/04

CPC分类号： D06F23/04

摘要： A washing machine having an improved structure which increases washing capacity without increasing the size of the washing machine. The washing machine includes a cabinet including an outer part and a cylindrical inner part connected to the outer part, a spin basket rotatably disposed in the inner part and including a bottom and a side wall extending from the bottom, a pulsator rotatably disposed in the spin basket, a motor provided under the spin basket, a clutch to selectively transmit power of the motor to the spin basket or the pulsator, a base plate to fix the clutch and the motor, and suspension members connecting the base plate to the upper portion of the cabinet. Wash water is stored within the spin basket and is not stored outside the spin basket during a washing cycle.

摘要翻译： 一种具有改进的结构的洗衣机，其在不增加洗衣机的尺寸的情况下增加洗涤能力。 洗衣机包括一个外壳和一个与外部连接的圆柱形内部的机壳，一个可旋转地设置在内部的旋转筒，包括底部和从底部延伸的侧壁，一个可旋转地设置在旋转中的波轮 设置在旋转筐下的马达，用于选择性地将马达的动力传递到旋转筐或波轮的离合器，用于固定离合器和马达的基板，以及将基板连接到上部的悬挂构件 内阁。 洗涤水储存在旋转筒内，并且在洗涤循环期间不会储存在旋转筒外部。

公开(公告)号：US20150194440A1

公开(公告)日：2015-07-09

申请号：US14539043

申请日：2014-11-12

申请人： Young-Jin Noh ,  Bio Kim ,  Kwangmin Park ,  Jaeyoung Ahn ,  SeungHyun Lim ,  JaeHo Choi ,  Jumi Yun ,  Ji-Hoon Choi

发明人： Young-Jin Noh ,  Bio Kim ,  Kwangmin Park ,  Jaeyoung Ahn ,  SeungHyun Lim ,  JaeHo Choi ,  Jumi Yun ,  Ji-Hoon Choi

IPC分类号： H01L27/115 ,  H01L29/792

CPC分类号： H01L29/7926 ,  H01L27/1157 ,  H01L27/11582 ,  H01L29/66833 ,  H01L29/792

摘要： A nonvolatile memory device includes a gate structure including inter-gate insulating patterns that are vertically stacked on a substrate and gate electrodes interposed between the inter-gate insulating patterns, a vertical active pillar connected to the substrate through the gate structure, a charge-storing layer between the vertical active pillar and the gate electrode, a tunnel insulating layer between the charge-storing layer and the vertical active pillar, and a blocking insulating layer between the charge-storing layer and the gate electrode. The charge-storing layer include first and second charge-storing layers that are adjacent to the blocking insulating layer and the tunnel insulating layer, respectively. The first charge-storing layer includes a silicon nitride layer, and the second charge-storing layer includes a silicon oxynitride layer.

摘要翻译： 非易失性存储器件包括栅极结构，栅极结构包括垂直堆叠在衬底上的栅极间绝缘图案和介于栅间绝缘图案之间的栅极电极，通过栅极结构连接到衬底的垂直有源柱，电荷存储 垂直有源柱和栅电极之间的层，电荷存储层和垂直有源柱之间的隧道绝缘层，以及电荷存储层和栅电极之间的阻挡绝缘层。 电荷存储层包括分别与隔离绝缘层和隧道绝缘层相邻的第一和第二电荷存储层。 第一电荷存储层包括氮化硅层，第二电荷存储层包括氮氧化硅层。

公开(公告)号：US08815676B2

公开(公告)日：2014-08-26

申请号：US13671948

申请日：2012-11-08

申请人： Sang-Ryol Yang ,  Yoo-Chul Kong ,  Jung-Ho Kim ,  Jin-Gyun Kim ,  Jae-Jin Shin ,  Ji-Hoon Choi

发明人： Sang-Ryol Yang ,  Yoo-Chul Kong ,  Jung-Ho Kim ,  Jin-Gyun Kim ,  Jae-Jin Shin ,  Ji-Hoon Choi

IPC分类号： H01L21/00

CPC分类号： H01L27/11582 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/1157

摘要： Methods of forming vertical nonvolatile memory devices may include forming an electrically insulating layer, which includes a composite of a sacrificial layer sandwiched between first and second mold layers. An opening extends through the electrically insulating layer and exposes inner sidewalls of the first and second mold layers and the sacrificial layer. A sidewall of the opening may be lined with an electrically insulating protective layer and a first semiconductor layer may be formed on an inner sidewall of the electrically insulating protective layer within the opening. At least a portion of the sacrificial layer may then be selectively etched from between the first and second mold layers to thereby define a lateral recess therein, which exposes an outer sidewall of the electrically insulating protective layer.

摘要翻译： 形成垂直非易失性存储器件的方法可以包括形成电绝缘层，其包括夹在第一和第二模具层之间的牺牲层的复合材料。 开口延伸穿过电绝缘层并暴露第一和第二模具层和牺牲层的内侧壁。 开口的侧壁可以衬有电绝缘保护层，并且可以在开口内的电绝缘保护层的内侧壁上形成第一半导体层。 然后可以从第一和第二模具层之间选择性地蚀刻牺牲层的至少一部分，从而在其中限定其中暴露电绝缘保护层的外侧壁的横向凹部。

公开(公告)号：US08497555B2

公开(公告)日：2013-07-30

申请号：US13298728

申请日：2011-11-17

申请人： Jin-Gyun Kim ,  Ki-Hyun Hwang ,  Sung-Hae Lee ,  Ji-Hoon Choi

发明人： Jin-Gyun Kim ,  Ki-Hyun Hwang ,  Sung-Hae Lee ,  Ji-Hoon Choi

IPC分类号： H01L29/792 ,  G11C11/40

CPC分类号： H01L29/7926 ,  H01L27/11582 ,  H01L29/1041 ,  H01L29/167 ,  H01L29/7923

摘要： A vertical memory device may include a substrate, a first selection line on the substrate, a plurality of word lines on the first selection line, a second selection line on the plurality of word lines, and a semiconductor channel. The first selection line may be between the plurality of word lines and the substrate, and the plurality of word lines may be between the first and second selection lines. Moreover, the first and second selection lines and the plurality of word lines may be spaced apart in a direction perpendicular with respect to a surface of the substrate. The semiconductor channel may extend away from the surface of the substrate adjacent sidewalls of the first and second selection lines and the plurality of word lines. In addition, portions of the semiconductor channel adjacent the second selection line may be doped with indium and/or gallium. Related methods are also discussed.

摘要翻译： 垂直存储器件可以包括衬底，衬底上的第一选择线，第一选择线上的多个字线，多个字线上的第二选择线，以及半导体沟道。 第一选择线可以在多个字线和衬底之间，并且多个字线可以在第一和第二选择线之间。 此外，第一选择线和第二选择线和多个字线可以在与衬底的表面垂直的方向上间隔开。 半导体通道可以延伸离开衬底的与第一和第二选择线和多个字线的侧壁相邻的表面。 此外，与第二选择线相邻的半导体通道的部分可以掺杂铟和/或镓。 还讨论了相关方法。

公开(公告)号：US20130036774A1

公开(公告)日：2013-02-14

申请号：US13570636

申请日：2012-08-09

申请人： Hyun Mook KIM ,  Sang Hyeok LEE ,  Je Hong MIN ,  Jung Hee LEE ,  Ji Hoon CHOI ,  Kab Jin JUN

发明人： Hyun Mook KIM ,  Sang Hyeok LEE ,  Je Hong MIN ,  Jung Hee LEE ,  Ji Hoon CHOI ,  Kab Jin JUN

IPC分类号： D06F21/00

CPC分类号： D06F39/083 ,  D06F37/26

摘要： A washing machine includes a rotary tub having a diameter progressively increasing from a first end side thereof to a second end side thereof located opposite the first end side, dehydration holes arranged at the second end side of the rotary tub, and a dehydration hole switching unit to open and close the dehydration holes. The dehydration holes are opened depending on increase of a rate of rotation of the rotary tub.

摘要翻译： 一种洗衣机包括：从其第一端侧的第一端侧到第二端侧的直径逐渐增加的旋转桶，设置在旋转桶的第二端侧的脱水孔，以及脱水孔切换单元 打开和关闭脱水孔。 脱水孔根据旋转桶的旋转速度的增加而打开。

公开(公告)号：US20120156848A1

公开(公告)日：2012-06-21

申请号：US13239594

申请日：2011-09-22

申请人： Sang-ryol YANG ,  Ki-hyun HWANG ,  Seung-bae PARK ,  Jin-gyun KIM ,  Woong LEE ,  Jung-geun JEE ,  Ji-hoon CHOI

发明人： Sang-ryol YANG ,  Ki-hyun HWANG ,  Seung-bae PARK ,  Jin-gyun KIM ,  Woong LEE ,  Jung-geun JEE ,  Ji-hoon CHOI

IPC分类号： H01L21/336 ,  H01L21/768

CPC分类号： H01L27/11556 ,  H01L27/11529 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582

摘要： A method of manufacturing a non-volatile memory device includes alternately stacking interlayer sacrificial layers and interlayer insulating layers on a substrate, forming first openings exposing the substrate, forming sidewall insulating layers on sidewalls of the first openings, and forming channel regions on the sidewall insulating layers. The first openings penetrate the interlayer sacrificial layers and the interlayer insulating layers. The sidewall insulating layers have different thicknesses according to distances from the substrate.

摘要翻译： 一种制造非易失性存储器件的方法包括在衬底上交替层叠层间牺牲层和层间绝缘层，形成暴露衬底的第一开口，在第一开口的侧壁上形成侧壁绝缘层，以及在侧壁绝缘层上形成沟道区 层。 第一开口贯穿层间牺牲层和层间绝缘层。 侧壁绝缘层根据与基板的距离具有不同的厚度。

公开(公告)号：US20120121422A1

公开(公告)日：2012-05-17

申请号：US13373092

申请日：2011-11-04

申请人： Hyun Joo Kim ,  Eung Ryeol Seo ,  Sang Jin Lee ,  Ji Hoon Choi

发明人： Hyun Joo Kim ,  Eung Ryeol Seo ,  Sang Jin Lee ,  Ji Hoon Choi

IPC分类号： F01D5/22

CPC分类号： F04D29/281 ,  F04D29/30

摘要： A centrifugal fan includes a main shroud and a sub shroud. The main shroud is configured to connect upper ends of outer rims of a plurality of blades spaced apart from one another in a circumferential direction of a base. The sub shroud is provided at the upper end of the outer rim of each blade and serves to prevent air from moving from a pressure surface to a negative pressure surface of each blade by passing over an upper end of the blade.

摘要翻译： 离心风扇包括主护罩和副护罩。 主护罩构造成连接在基座的圆周方向上彼此间隔开的多个叶片的外缘的上端。 副护罩设置在每个叶片的外缘的上端，并且用于防止空气通过叶片的上端通过每个叶片的压力表面移动到负压表面。