公开(公告)号：US08866136B2

公开(公告)日：2014-10-21

申请号：US12805379

申请日：2010-07-28

申请人： Ji-sim Jung ,  Chang-seung Lee ,  Jae-cheol Lee ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kwang-hee Lee ,  Kyoung-seok Son

发明人： Ji-sim Jung ,  Chang-seung Lee ,  Jae-cheol Lee ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kwang-hee Lee ,  Kyoung-seok Son

IPC分类号： H01L29/10 ,  H01L29/786

CPC分类号： H01L29/7869 ,  H01L29/78606

摘要： Provided are a transistor, a method of manufacturing the transistor, and an electronic device including the transistor. The transistor may include a passivation layer on a channel layer, a source, a drain, and a gate, wherein the component of the passivation layer is varied in a height direction. The passivation layer may have a multi-layer structure including a silicon oxide layer, a silicon oxynitride layer, and a silicon nitride layer sequentially stacked. The channel layer may include an oxide semiconductor.

摘要翻译： 提供晶体管，晶体管的制造方法和包括该晶体管的电子器件。 晶体管可以包括沟道层上的钝化层，源极，漏极和栅极，其中钝化层的成分在高度方向上变化。 钝化层可以具有依次层叠的包括氧化硅层，氮氧化硅层和氮化硅层的多层结构。 沟道层可以包括氧化物半导体。

公开(公告)号：US08378342B2

公开(公告)日：2013-02-19

申请号：US12659837

申请日：2010-03-23

申请人： Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

发明人： Tae-sang Kim ,  Sang-yoon Lee ,  Jang-yeon Kwon ,  Kyoung-seok Son ,  Ji-sim Jung ,  Kwang-hee Lee

IPC分类号： H01L29/786

CPC分类号： H01L29/7869

摘要： Provided are an oxide semiconductor and an oxide thin film transistor including the oxide semiconductor. The oxide semiconductor may be formed of an indium (In)-zinc (Zn) oxide in which hafnium (Hf) is contained, wherein In, Zn, and Hf are contained in predetermined or given composition ratios.

摘要翻译： 提供了包括氧化物半导体的氧化物半导体和氧化物薄膜晶体管。 氧化物半导体可以由其中含有铪（Hf）的铟（In） - 锌（Zn）氧化物形成，其中以预定或给定的组成比包含In，Zn和Hf。

公开(公告)号：US20120295407A1

公开(公告)日：2012-11-22

申请号：US13564082

申请日：2012-08-01

申请人： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Byung-wook YOO ,  Sang-yoon LEE ,  Myung-kwan RYU ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L21/336

CPC分类号： H01L29/78696 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66765

摘要： A thin film transistor (TFT) and a method of manufacturing the same are provided, the TFT including a gate insulating layer on a gate. A channel may be formed on a portion of the gate insulating layer corresponding to the gate. A metal material may be formed on a surface of the channel. The metal material crystallizes the channel. A source and a drain may contact side surfaces of the channel.

摘要翻译： 提供薄膜晶体管（TFT）及其制造方法，TFT在栅极上包括栅极绝缘层。 可以在对应于栅极的栅极绝缘层的一部分上形成沟道。 可以在通道的表面上形成金属材料。 金属材料使通道结晶。 源极和漏极可以接触通道的侧表面。

公开(公告)号：US08124979B2

公开(公告)日：2012-02-28

申请号：US12032007

申请日：2008-02-15

申请人： Ji-sim Jung ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Min-koo Han ,  Sang-yoon Lee ,  Joong-hyun Park ,  Sang-myeon Han ,  Sun-jae Kim

发明人： Ji-sim Jung ,  Myung-kwan Ryu ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Min-koo Han ,  Sang-yoon Lee ,  Joong-hyun Park ,  Sang-myeon Han ,  Sun-jae Kim

IPC分类号： H01L27/14

CPC分类号： H01L29/78621 ,  H01L29/42384 ,  H01L2029/7863

摘要： Provided are a thin film transistor and a method of manufacturing the same. The thin film transistor includes: a lower structure; a semiconductor layer formed on the lower structure and including a plurality of doping regions; a first insulating layer and a second insulating layer formed on the semiconductor layer and separated from each other; a third insulating layer formed on the first insulating layer and the second insulating layer; and a gate electrode layer formed between regions of the third insulating layer respectively corresponding to the first insulating layer and the second insulating layer.

摘要翻译： 提供一种薄膜晶体管及其制造方法。 薄膜晶体管包括：下部结构; 半导体层，形成在所述下部结构上并且包括多个掺杂区域; 形成在所述半导体层上并分离的第一绝缘层和第二绝缘层; 形成在所述第一绝缘层和所述第二绝缘层上的第三绝缘层; 以及在第三绝缘层的分别对应于第一绝缘层和第二绝缘层的区域之间形成的栅极电极层。

公开(公告)号：US20110159646A1

公开(公告)日：2011-06-30

申请号：US13064080

申请日：2011-03-04

申请人： Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L21/84

CPC分类号： H01L29/78696 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/0262 ,  H01L21/02631 ,  H01L29/7869

摘要： A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration.

摘要翻译： TFT包括具有多个半导体层的基于氧化锌（ZnO）的沟道层。 多个半导体层的最上部的Zn浓度比下半导体层的Zn浓度低，以抑制由于等离子体引起的氧空位。 沟道层的最上半导体层还具有对等离子体具有相对稳定的结合能的锡（Sn）氧化物，氯化物，氟化物等。 最高的半导体层相对于等离子体冲击相对较强，当暴露于等离子体时分解较少，从而抑制载流子浓度的增加。

公开(公告)号：US07682882B2

公开(公告)日：2010-03-23

申请号：US12153674

申请日：2008-05-22

申请人： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

发明人： Myung-kwan Ryu ,  Sang-yoon Lee ,  Je-hun Lee ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Kyung-seok Son ,  Ji-sim Jung

IPC分类号： H01L21/00

CPC分类号： H01L29/7869

摘要： Provided is a method of manufacturing a ZnO-based thin film transistor (TFT). The method may include forming source and drain electrodes using one or two wet etchings. A tin (Sn) oxide, a fluoride, or a chloride having relatively stable bonding energy against plasma may be included in a channel layer. Because the source and drain electrodes are formed by wet etching, damage to the channel layer and an oxygen vacancy may be prevented or reduced. Because the material having higher bonding energy is distributed in the channel layer, damage to the channel layer occurring when a passivation layer is formed may be prevented or reduced.

摘要翻译： 提供了一种制造ZnO基薄膜晶体管（TFT）的方法。 该方法可以包括使用一个或两个湿蚀刻来形成源极和漏极。 对于等离子体具有相对稳定的结合能的锡（Sn）氧化物，氟化物或氯化物可以包括在通道层中。 因为源电极和漏电极是通过湿蚀刻形成的，所以可以防止或减少对沟道层的损伤和氧空位。 因为具有较高结合能的材料分布在沟道层中，所以可以防止或减少在形成钝化层时对沟道层的损坏。

公开(公告)号：US20080283831A1

公开(公告)日：2008-11-20

申请号：US11960567

申请日：2007-12-19

申请人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

发明人： Myung-kwan RYU ,  Jun-seong KIM ,  Sang-yoon LEE ,  Euk-che HWANG ,  Tae-sang KIM ,  Jang-yeon KWON ,  Kyung-bae PARK ,  Kyung-seok SON ,  Ji-sim JUNG

IPC分类号： H01L29/227 ,  H01L21/34

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein, as is a method of manufacturing the TFT. The ZnO-based TFT has a channel layer that comprises ZnO and ZnCl, wherein the ZnCl has a higher bonding energy than ZnO with respect to plasma. The ZnCl is formed through the entire channel layer, and specifically is formed in a region near THE surface of the channel layer. Since the ZnCl is strong enough not to be decomposed when exposed to plasma etching gas, an increase in the carrier concentration can be prevented. The distribution of ZnCl in the channel layer, may result from the inclusion of chlorine (Cl) in the plasma gas during the patterning of the channel layer.

摘要翻译： 这里提供了一种ZnO基薄膜晶体管（TFT），以及TFT的制造方法。 ZnO基TFT具有包含ZnO和ZnCl的沟道层，其中ZnCl相对于等离子体具有比ZnO高的结合能。 ZnCl是通过整个沟道层形成的，具体地形成在沟道层表面附近的区域。 由于ZnCl强度足够暴露于等离子体蚀刻气体时不会分解，因此可以防止载流子浓度的增加。 ZnCl在沟道层中的分布可能是由于在沟道层图案化期间在等离子体气体中包含氯（Cl）。

公开(公告)号：US20080153214A1

公开(公告)日：2008-06-26

申请号：US11958719

申请日：2007-12-18

申请人： Ji-sim JUNG ,  Jung-seok HAHN ,  Sang-yoon LEE ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK

发明人： Ji-sim JUNG ,  Jung-seok HAHN ,  Sang-yoon LEE ,  Jong-man KIM ,  Jang-yeon KWON ,  Kyung-bae PARK

IPC分类号： H01L21/336

CPC分类号： H01L21/02672 ,  H01L21/02532 ,  H01L21/02595 ,  H01L27/1229 ,  H01L27/1277 ,  H01L27/3262

摘要： Provided is a method of manufacturing a driving-device for a unit pixel of an organic light emitting display having an improved manufacturing process in which the driving device can be manufactured with a smaller number of processes and in simpler processes. The method includes: forming an amorphous silicon layer including a first amorphous region and a second amorphous region disposed on the same plane of a substrate; forming an SAM (self-assembled monolayer) having a hydrophobic property on the first amorphous region; coating an aqueous solution in which nickel particles are dispersed, on the second amorphous region and the SAM, wherein a larger amount of nickel particles than on the SAM are dispersed on the second amorphous region using a hydrophilicity difference between the second amorphous region and the SAM; vaporizing the SAM through an annealing process and simultaneously performing metal induced crystallization in which the nanoparticles are used as a medium, to crystallize the first and second amorphous regions and to form first and second crystallization regions; patterning the first and second crystallization regions to form first and second channel regions; and forming first and second electrodes on the first and second channel regions.

摘要翻译： 提供一种制造有机发光显示器的单位像素的驱动装置的方法，该有机发光显示器具有改进的制造工艺，其中驱动装置可以以较少的工艺和更简单的工艺制造。 该方法包括：形成包括设置在基板的同一平面上的第一非晶区和第二非晶区的非晶硅层; 在第一非晶区上形成具有疏水性的SAM（自组装单层）; 在所述第二非晶区域和所述SAM上涂覆其中分散有镍颗粒的水溶液，其中比所述SAM上更大量的所述镍颗粒分散在所述第二非晶区域上，使用所述第二非晶区域和所述SAM之间的亲水性差异 ; 通过退火工艺蒸发SAM，同时进行金属诱导结晶，其中纳米颗粒用作介质，使第一和第二非晶区域结晶并形成第一和第二结晶区域; 图案化第一和第二结晶区域以形成第一和第二通道区域; 以及在所述第一和第二通道区域上形成第一和第二电极。

公开(公告)号：US08735229B2

公开(公告)日：2014-05-27

申请号：US12110744

申请日：2008-04-28

申请人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

发明人： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC分类号： H01L21/00

CPC分类号： H01L29/7869

摘要： A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

摘要翻译： 本文提供了一种ZnO基薄膜晶体管（TFT）。 还提供了一种用于制造TFT的方法。 ZnO基TFT对通道层中存在的氧浓度非常敏感。 为了防止对底栅TFT的沟道层的损坏，并且为了避免由于对沟道层的损坏而产生的深负阈值电压，制造ZnO基TFT的方法包括形成蚀刻停止层或钝化层 层，其包含不稳定或不完全结合的氧，并且退火层以在氧化物层和沟道层之间引起界面反应并降低载流子浓度。

公开(公告)号：US20120028422A1

公开(公告)日：2012-02-02

申请号：US13267145

申请日：2011-10-06

申请人： Jang-yeon KWON ,  Sang-yoon LEE ,  Jong-man KIM ,  Kyung-bae PARK ,  Ji-sim JUNG

发明人： Jang-yeon KWON ,  Sang-yoon LEE ,  Jong-man KIM ,  Kyung-bae PARK ,  Ji-sim JUNG

IPC分类号： H01L21/336

CPC分类号： H01L29/78603 ,  H01L29/78645

摘要： A thin film transistor (“TFT”) includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.

摘要翻译： 薄膜晶体管（“TFT”）包括形成在柔性基板上的多晶硅层，其包括源极区，漏极区和沟道区，以及形成在多晶硅层的沟道区上的栅叠层，其中 栅极堆叠包括第一和第二栅极堆叠，并且第一和第二栅极堆叠之间的多晶硅层的区域是偏移区域。 还提供了制造TFT的方法。