公开(公告)号：US10133298B2

公开(公告)日：2018-11-20

申请号：US14995834

申请日：2016-01-14

Applicant: Young-Jin Cho ,  Jae-Geun Park ,  Young-Kwang Yoo ,  Soon-Suk Hwang

Inventor： Young-Jin Cho ,  Jae-Geun Park ,  Young-Kwang Yoo ,  Soon-Suk Hwang

IPC: G06F1/10 ,  G06F1/04 ,  G06F5/06

Abstract: A memory system including a memory controller with channel interfaces connecting memory groups via channels. Each channel interface communicates control, address and/or data (CAD) signals to a channel-connected memory group synchronously with a slave clock derived from an input clock. The various slave clocks being uniquely generated by application of channel interface specific phase/frequency modulation or temporal delay, such that the respective CAD signals are characterized by skewed transition timing.

公开(公告)号：US20180152206A1

公开(公告)日：2018-05-31

申请号：US15664295

申请日：2017-07-31

Applicant: Hoon SIN ,  Sang-Uhn CHA ,  Ye-Sin RYU ,  Seong-Jin CHO

Inventor： Hoon SIN ,  Sang-Uhn CHA ,  Ye-Sin RYU ,  Seong-Jin CHO

IPC: H03M13/29 ,  G06F11/10

CPC classification number: H03M13/2906 ,  G06F11/1048 ,  G06F11/1076 ,  H03M13/09 ,  H03M13/13

Abstract: A memory module includes data memories and at least one parity memory. Each of the data memories includes a first memory cell array with a first memory region to store data set corresponding to a plurality of burst lengths and a second memory region to store first parity bits to perform error detection/correction associated with the data set. The at least one parity memory includes a second memory cell array with a first parity region to store parity bits associated with user data set corresponding to all of the data set stored in each of the data memories and a second parity region to store second parity bits for error detection/correction associated with the parity bits.

公开(公告)号：US09637853B2

公开(公告)日：2017-05-02

申请号：US13556814

申请日：2012-07-24

Applicant: Hooi Joong Kim ,  Sung Jong Kim ,  Moo Hyung Lee ,  Jae Seuk Park ,  Sung Jin Cho ,  Ii Sung Bae ,  Ho Choi

Inventor： Hooi Joong Kim ,  Sung Jong Kim ,  Moo Hyung Lee ,  Jae Seuk Park ,  Sung Jin Cho ,  Ii Sung Bae ,  Ho Choi

IPC: D06F37/22 ,  F16F15/32

CPC classification number: D06F37/225 ,  F16F15/32 ,  Y10T74/2132

Abstract: A washing machine capable of manipulating a balancer with a simple manipulation, and a balancer thereof, the washing machine including a rotating tub configured to accommodate a laundry while being rotatably disposed on a shaft, at least one mass mounted on the rotating tub so as to move in a circumferential direction of the rotating tub, thereby offsetting an unbalanced load of the rotating tub, at least one wire extending along the circumferential direction of the rotating tub and coupled to the at least one mass, and at least one driving unit coupled to the at least one wire and configured to rotate the at least one mass in the circumferential direction of the rotating tub.

公开(公告)号：US09282612B2

公开(公告)日：2016-03-08

申请号：US13470078

申请日：2012-05-11

Applicant: Bo-Ra Lee ,  Chang-Ho Lee ,  Il-Soo Oh ,  Jin-Young Yun ,  Hee-Joo Ko ,  Se-Jin Cho ,  Hyung-Jun Song ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Sung-Chul Kim

Inventor： Bo-Ra Lee ,  Chang-Ho Lee ,  Il-Soo Oh ,  Jin-Young Yun ,  Hee-Joo Ko ,  Se-Jin Cho ,  Hyung-Jun Song ,  Young-Woo Song ,  Jong-Hyuk Lee ,  Sung-Chul Kim

IPC: H05B33/08 ,  H01L51/52

CPC classification number: H05B33/0896 ,  H01L51/5221 ,  H01L51/5231 ,  H01L2251/5353

Abstract: A dual mode organic light emitting device and a pixel circuit including the same are disclosed. The dual mode organic light emitting device includes a cathode formed over a substrate, an electron transport layer (ETL) formed over the cathode, an emission layer formed over the electron transport layer (ETL), and an anode formed over the emission layer, wherein the cathode includes a first metal selected from silver (Ag), aluminum (Al), copper (Cu), and gold (Au) and a second metal having a work function of about 4.0 eV or less, and the first metal and the second metal are present at a weight ratio of about 1:1 to about 1:100.

Abstract translation: 公开了一种双模有机发光器件和包括该双模有机发光器件的像素电路。 双模有机发光器件包括在衬底上形成的阴极，在阴极上形成的电子传输层（ETL），形成在电子传输层（ETL）上的发射层）和形成在发光层上的阳极，其中 阴极包括选自银（Ag），铝（Al），铜（Cu）和金（Au）的第一金属和功函数为约4.0eV以下的第二金属，第一金属和第二金属 金属以约1:1至约1:100的重量比存在。

公开(公告)号：US09159947B2

公开(公告)日：2015-10-13

申请号：US13064016

申请日：2011-03-02

Applicant: Hee-Joo Ko ,  Chang-Ho Lee ,  Il-Soo Oh ,  Se-Jin Cho ,  Hyung-Jun Song ,  Jin-Young Yun ,  Jong-Hyuk Lee

Inventor： Hee-Joo Ko ,  Chang-Ho Lee ,  Il-Soo Oh ,  Se-Jin Cho ,  Hyung-Jun Song ,  Jin-Young Yun ,  Jong-Hyuk Lee

IPC: H01L51/54 ,  H01L51/52 ,  H01L51/50

CPC classification number: H01L51/5206 ,  H01L51/5004 ,  H01L51/5088 ,  H01L51/5218 ,  Y10S428/917

Abstract: An organic light-emitting device, including a first electrode, the first electrode having a smaller absolute value of a work function energy level than an absolute value of a work function energy level of ITO, a second electrode facing the first electrode, and an organic layer between the first electrode and the second electrode.

Abstract translation: 一种有机发光器件，包括第一电极，所述第一电极具有比ITO的功函数能级的绝对值更低的功函数能级的绝对值，与第一电极相对的第二电极和有机 在第一电极和第二电极之间。

公开(公告)号：US09128326B2

公开(公告)日：2015-09-08

申请号：US13616139

申请日：2012-09-14

Applicant: Byoung-jin Cho ,  Young-chol Lee ,  Hyung-chul Kim ,  Heong-seog Lee ,  Hyeong-sik Choi

Inventor： Byoung-jin Cho ,  Young-chol Lee ,  Hyung-chul Kim ,  Heong-seog Lee ,  Hyeong-sik Choi

IPC: G02F1/00 ,  G02F1/1335

CPC classification number: G02F1/133608 ,  F21V21/00 ,  G02F1/133602 ,  G02F1/133603 ,  G02F1/133604 ,  G02F2201/46 ,  G02F2201/465 ,  G02F2201/54

Abstract: A supporting member usable with a backlight unit of an image display apparatus includes a supporting portion that is formed of a transparent material, is disposed below the diffuser plate to support the diffuser plate, and has a first end being in contact with the diffuser plate; and a base that is formed at a second end of the supporting portion and fixes the supporting portion to an under chassis of the backlight unit.

Abstract translation: 可用于图像显示装置的背光单元的支撑构件包括由透明材料形成的支撑部分，设置在扩散板下方以支撑扩散板，并且具有与扩散板接触的第一端; 以及形成在所述支撑部的第二端部并且将所述支撑部固定到所述背光单元的底架的基部。

公开(公告)号：US09070706B2

公开(公告)日：2015-06-30

申请号：US13611127

申请日：2012-09-12

Applicant: Young-jin Cho ,  Kyoung-yeon Kim ,  Sang-moon Lee ,  Ki-ha Hong ,  Eui-chul Hwang

Inventor： Young-jin Cho ,  Kyoung-yeon Kim ,  Sang-moon Lee ,  Ki-ha Hong ,  Eui-chul Hwang

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/778 ,  H01L29/20

CPC classification number: H01L29/7784 ,  H01L21/02538 ,  H01L29/122 ,  H01L29/127 ,  H01L29/158 ,  H01L29/20 ,  H01L29/205 ,  H01L29/42376 ,  H01L29/66431 ,  H01L29/66462 ,  H01L29/66522 ,  H01L29/66795 ,  H01L29/7783 ,  H01L29/7787 ,  H01L29/785

Abstract: A semiconductor device including a group III-V barrier and a method of manufacturing the semiconductor device, the semiconductor device including: a substrate, insulation layers formed to be spaced apart on the substrate, a group III-V material layer for filling the space between the insulation layers and having a portion protruding higher than the insulation layers, a barrier layer for covering the side and upper surfaces of the protruding portion of the group III-V material layer and having a bandgap larger than that of the group III-V material layer, a gate insulation film for covering the surface of the barrier layer, a gate electrode formed on the gate insulation film, and source and drain electrodes formed apart from the gate electrode. The overall composition of the group III-V material layer is uniform. The barrier layer may include a group III-V material for forming a quantum well.

Abstract translation: 一种包括III-V族阻挡层的半导体器件和制造半导体器件的方法，所述半导体器件包括：衬底，形成为在衬底上间隔开的绝缘层，用于填充所述衬底之间的空间的III-V族材料层 所述绝缘层具有比所述绝缘层突出的部分，用于覆盖所述III-V族材料层的所述突出部分的侧表面和上表面的阻挡层，并且具有比所述III-V族材料的带隙大的带隙 层，用于覆盖势垒层的表面的栅极绝缘膜，形成在栅极绝缘膜上的栅电极，以及与栅电极分开形成的源极和漏极。 III-V族材料层的总体组成是均匀的。 阻挡层可以包括用于形成量子阱的III-V族材料。

公开(公告)号：US09045744B2

公开(公告)日：2015-06-02

申请号：US14000497

申请日：2012-02-20

Applicant: Nam-Soo Kim ,  Chong-Tai Kim ,  Yong-Jin Cho ,  Chul-Jin Kim ,  Jin-Soo Maeng ,  Soo-Jin Kwon

Inventor： Nam-Soo Kim ,  Chong-Tai Kim ,  Yong-Jin Cho ,  Chul-Jin Kim ,  Jin-Soo Maeng ,  Soo-Jin Kwon

IPC: C12N9/50 ,  C12Q1/37 ,  C12N9/64 ,  A61K38/48 ,  A61K38/51 ,  A23L1/01 ,  A23L1/03 ,  A23L1/22 ,  A23L1/227 ,  A23L3/015 ,  C12N9/48 ,  C12N9/52 ,  C12N9/76

CPC classification number: C12N9/6481 ,  A23L3/0155 ,  A23L5/17 ,  A23L27/00 ,  A23L27/21 ,  A23L29/06 ,  A61K38/48 ,  A61K38/51 ,  C12N9/48 ,  C12N9/485 ,  C12N9/52 ,  C12N9/6427 ,  C12Q1/37 ,  C12Y304/00

Abstract: At least at least one embodiment of the present invention relates to a method for using a high pressure-resistant enzyme in a high pressure condition; a method for promoting the activity of the high pressure-resistant enzyme by means of a high pressure treatment; a composition, which contains the high pressure-resistant enzyme, for decomposing proteins under a high pressure condition; a composition, which contains the composition for decomposing proteins, for preparing natural flavoring substances; a container for high pressure treatment, which contains the composition for decomposing proteins; and a method for measuring the activity of the high pressure-resistant enzyme, which comprises a step of decomposing an azocasein solution serving as a substrate by using the high pressure-resistant enzyme treated under a high pressure condition.

Abstract translation: 本发明的至少一个实施方案涉及在高压条件下使用高耐压酶的方法; 通过高压处理促进高耐压酶的活性的方法; 含有高耐压酶的组合物，用于在高压条件下分解蛋白质; 含有用于分解蛋白质的组合物的组合物，用于制备天然调味物质; 用于高压处理的容器，其包含用于分解蛋白质的组合物; 以及测定高耐压酶的活性的方法，其包括通过使用在高压条件下处理的高耐压酶分解作为底物的偶​​氮酪蛋白溶液的步骤。

公开(公告)号：US08900997B2

公开(公告)日：2014-12-02

申请号：US14072881

申请日：2013-11-06

Applicant: Joon-Young Moon ,  Youn-Jin Cho ,  Sung-Jae Lee ,  You-Jung Park ,  Yong-Woon Yoon ,  Chul-Ho Lee ,  Chung-Heon Lee

Inventor： Joon-Young Moon ,  Youn-Jin Cho ,  Sung-Jae Lee ,  You-Jung Park ,  Yong-Woon Yoon ,  Chul-Ho Lee ,  Chung-Heon Lee

IPC: H01L21/44 ,  H01L23/522 ,  H01L23/532 ,  H01L21/768

CPC classification number: H01L21/76804 ,  H01L21/76808 ,  H01L23/5226 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Forming a dual damascene structure includes forming a first insulation layer and a second insulation layer, forming a resist mask, forming a via hole down to a lower end of the first insulation layer, forming a hardmask layer in the via hole and on the second insulation layer using a spin-coating method, forming a resist mask, forming a first trench hole down to a lower end of the second insulation layer, respectively removing a part of the hardmask layer in the via hole and a part of the hardmask layer on the second insulation layer, forming a second trench hole by removing a part of the first insulation layer between a top corner of the hardmask layer remaining in the via hole and a bottom corner of the first trench hole, removing the hardmask layer, and filling the via hole and the second trench hole with a conductive material.

Abstract translation: 形成双镶嵌结构包括形成第一绝缘层和第二绝缘层，形成抗蚀剂掩模，在第一绝缘层的下端形成通孔，在通孔中和第二绝缘层上形成硬掩模层 层，形成抗蚀剂掩模，在第二绝缘层的下端形成第一沟槽，分别去除通孔中的硬掩模层的一部分和硬掩模层的一部分， 第二绝缘层，通过去除残留在通孔中的硬掩模层的顶角之间的第一绝缘层的一部分和第一沟槽的底角，形成第二沟槽，去除硬掩模层，并且填充通孔 孔和具有导电材料的第二沟槽孔。

公开(公告)号：US08809226B2

公开(公告)日：2014-08-19

申请号：US13415208

申请日：2012-03-08

Applicant: In Kyu Song ,  Ho Won Lee ,  Yeon Shick Yoo ,  Young Jin Cho ,  Jin Suk Lee ,  Ho Sik Jang

Inventor： In Kyu Song ,  Ho Won Lee ,  Yeon Shick Yoo ,  Young Jin Cho ,  Jin Suk Lee ,  Ho Sik Jang

IPC: B01J21/04 ,  B01J23/00 ,  B01J23/02 ,  B01J23/04 ,  B01J23/06 ,  C01G27/02 ,  C04B35/48 ,  C04B35/49 ,  C07C5/48 ,  C01G31/00 ,  B01J21/06 ,  B01J23/22 ,  B01J35/00 ,  C01G25/02 ,  B01J37/02

CPC classification number: C07C5/48 ,  B01J21/066 ,  B01J23/22 ,  B01J35/002 ,  B01J37/0201 ,  C01G25/02 ,  C01G31/00 ,  C01P2002/72 ,  C01P2006/12 ,  C07C2521/06 ,  C07C2521/10 ,  C07C2523/22 ,  Y10S502/506 ,  C07C11/167 ,  C07C11/09

Abstract: A method of producing a carrier used for a catalyst for oxidative dehydrogenation of n-butane; a method of producing a magnesium orthovanadate catalyst supported by the carrier; and a method of producing n-butene and 1,3-butadiene using the catalyst are described.

Abstract translation: 一种生产用于正丁烷氧化脱氢催化剂的载体的方法; 由载体担载的原钒酸镁催化剂的制造方法; 并描述了使用该催化剂生产正丁烯和1,3-丁二烯的方法。