公开(公告)号：US08111389B2

公开(公告)日：2012-02-07

申请号：US12717688

申请日：2010-03-04

申请人： Seung Seoup Lee ,  Tak Gyum Kim ,  Jin Won Park

发明人： Seung Seoup Lee ,  Tak Gyum Kim ,  Jin Won Park

IPC分类号： G01N21/00

CPC分类号： G01N21/95684 ,  G01R31/309

摘要： Disclosed herein is a method of inspecting defects in a circuit pattern of a substrate. At least one laser beam radiation unit for radiating a laser beam onto an inspection target circuit pattern of a substrate in a non-contact manner is prepared. A probe beam radiation unit for radiating a probe beam onto a connection circuit pattern to be electrically connected to the inspection target circuit pattern in a non-contact manner is prepared. The laser beam is radiated onto the inspection target circuit pattern using the laser beam radiation unit. The probe beam is radiated onto the connection circuit pattern using the probe beam radiation unit, thus measuring information about whether the probe beam is diffracted, and a diffraction angle. Accordingly, the method can solve problems such as erroneous measurements caused by contact pressure and can reduce the time required for measurements.

摘要翻译： 本文公开了一种检查基板的电路图案中的缺陷的方法。 制备用于以非接触方式将激光束照射到基板的检查对象电路图案上的至少一个激光束辐射单元。 准备用于以不接触的方式将探测光束照射到连接电路图案以电连接到检查对象电路图案的探测光束辐射单元。 使用激光束辐射单元将激光束照射到检查对象电路图案上。 使用探测光束辐射单元将探测光束照射到连接电路图案上，从而测量关于探针光束是否衍射的信息和衍射角。 因此，该方法可以解决诸如由接触压力引起的误差测量等问题，并且可以减少测量所需的时间。

公开(公告)号：US20110090447A1

公开(公告)日：2011-04-21

申请号：US12976910

申请日：2010-12-22

申请人： Hye-ran You ,  Yoon-sung Um ,  Jae-jin Lyu ,  Seung-beom Park ,  Jin-won Park ,  Hoon Kim

发明人： Hye-ran You ,  Yoon-sung Um ,  Jae-jin Lyu ,  Seung-beom Park ,  Jin-won Park ,  Hoon Kim

IPC分类号： G02F1/1343

CPC分类号： G02F1/13624 ,  G02F1/136213 ,  G02F2001/134345

摘要： A display apparatus including a plurality of gate lines, a data line intersecting the plurality of gate lines; a first pixel unit connected with a n-th gate line of the plurality of gate lines and the data line. A second pixel unit connected with a (n+1)-th gate line of the plurality of gate lines; and a coupling capacitor disposed between the first pixel unit and the second pixel unit, wherein the first pixel unit comprises a first liquid crystal capacitor and a first thin film transistor (TFT), the second pixel unit comprises a second liquid crystal capacitor and a second thin film transistor (TFT), and a source electrode and a drain electrode of the second TFT are connected with both electrodes of the coupling capacitor, respectively.

摘要翻译： 一种显示装置，包括多条栅极线，与多条栅极线相交的数据线; 与多条栅极线的第n条栅极线和数据线连接的第一像素单元。 与所述多个栅极线中的第（n + 1）栅极线连接的第二像素单元; 以及设置在所述第一像素单元和所述第二像素单元之间的耦合电容器，其中所述第一像素单元包括第一液晶电容器和第一薄膜晶体管（TFT），所述第二像素单元包括第二液晶电容器和第二液晶电容器 薄膜晶体管（TFT），第二TFT的源电极和漏电极分别与耦合电容器的两个电极连接。

公开(公告)号：US07894008B2

公开(公告)日：2011-02-22

申请号：US12077496

申请日：2008-03-18

申请人： Hye-ran You ,  Yoon-sung Um ,  Jae-jin Lyu ,  Seung-beom Park ,  Jin-won Park ,  Hoon Kim

发明人： Hye-ran You ,  Yoon-sung Um ,  Jae-jin Lyu ,  Seung-beom Park ,  Jin-won Park ,  Hoon Kim

IPC分类号： G02F1/1343

CPC分类号： G02F1/13624 ,  G02F1/136213 ,  G02F2001/134345

摘要： A display apparatus including a plurality of gate lines, a data line intersecting the plurality of gate lines; a first pixel unit connected with a n-th gate line of the plurality of gate lines and the data line. A second pixel unit connected with a (n+1)-th gate line of the plurality of gate lines; and a coupling capacitor disposed between the first pixel unit and the second pixel unit, wherein the first pixel unit comprises a first liquid crystal capacitor and a first thin film transistor (TFT), the second pixel unit comprises a second liquid crystal capacitor and a second thin film transistor (TFT), and a source electrode and a drain electrode of the second TFT are connected with both electrodes of the coupling capacitor, respectively.

公开(公告)号：US20090002583A1

公开(公告)日：2009-01-01

申请号：US12077496

申请日：2008-03-18

申请人： Hye-ran You ,  Yoon-sung Um ,  Jae-Jin Lyu ,  Seung-beom Park ,  Jin-won Park ,  Hoon Kim

发明人： Hye-ran You ,  Yoon-sung Um ,  Jae-Jin Lyu ,  Seung-beom Park ,  Jin-won Park ,  Hoon Kim

IPC分类号： G02F1/133

CPC分类号： G02F1/13624 ,  G02F1/136213 ,  G02F2001/134345

摘要： A display apparatus including a plurality of gate lines, a data line intersecting the plurality of gate lines; a first pixel unit connected with a n-th gate line of the plurality of gate lines and the data line. A second pixel unit connected with a (n+1)-th gate line of the plurality of gate lines; and a coupling capacitor disposed between the first pixel unit and the second pixel unit, wherein the first pixel unit comprises a first liquid crystal capacitor and a first thin film transistor (TFT), the second pixel unit comprises a second liquid crystal capacitor and a second thin film transistor (TFT), and a source electrode and a drain electrode of the second TFT are connected with both electrodes of the coupling capacitor, respectively.

摘要翻译： 一种显示装置，包括多条栅极线，与多条栅极线相交的数据线; 与多条栅极线的第n条栅极线和数据线连接的第一像素单元。 与所述多个栅极线中的第（n + 1）栅极线连接的第二像素单元; 以及设置在所述第一像素单元和所述第二像素单元之间的耦合电容器，其中所述第一像素单元包括第一液晶电容器和第一薄膜晶体管（TFT），所述第二像素单元包括第二液晶电容器和第二液晶电容器 薄膜晶体管（TFT），第二TFT的源电极和漏电极分别与耦合电容器的两个电极连接。

公开(公告)号：US20070268437A1

公开(公告)日：2007-11-22

申请号：US11747014

申请日：2007-05-10

申请人： Mee-Hye Jung ,  Ji-Won Sohn ,  Sung-Hoon Yang ,  Jin-Won Park ,  Seon-Ah Cho

发明人： Mee-Hye Jung ,  Ji-Won Sohn ,  Sung-Hoon Yang ,  Jin-Won Park ,  Seon-Ah Cho

IPC分类号： G02F1/1337

CPC分类号： G02F1/1343 ,  G02F1/133707 ,  G02F1/1393

摘要： In a liquid crystal display device, the device includes a first substrate, a second substrate and a liquid crystal layer interposed therebetween. The first substrate includes a pixel electrode, a thin film transistor connected to the pixel electrode, and also a hitch to connect both a lower and upper electrode of the pixel electrode. The second substrate includes a common electrode having a lower domain division part and an upper domain division part, in which each of domain division part is formed at the position corresponding to the lower and upper electrode of the pixel electrode, respectively. Through the electric field controller connected at both sides of the upper electrode of the pixel electrode, quality of display image can improve without a darkening area occurring at one part of the unit pixel.

摘要翻译： 在液晶显示装置中，该装置包括第一基板，第二基板和插入其间的液晶层。 第一基板包括像素电极，连接到像素电极的薄膜晶体管，以及连接像素电极的下电极和上电极的连接。 第二基板包括具有下畴分割部分和上畴分割部分的公共电极，其中每个畴分割部分分别形成在与像素电极的下电极和上电极相对应的位置。 通过连接在像素电极的上部电极的两侧的电场控制器，可以改善显示图像的质量，而不会在单位像素的一部分处发生变暗区域。

公开(公告)号：US6043167A

公开(公告)日：2000-03-28

申请号：US947503

申请日：1997-10-10

申请人： Young Hie Lee ,  Dong Sun Kim ,  Jin Won Park

发明人： Young Hie Lee ,  Dong Sun Kim ,  Jin Won Park

IPC分类号： C23C16/42 ,  C23C16/30 ,  C23C16/50 ,  C23C16/517 ,  H01L21/31 ,  H01L21/312 ,  H01L21/314 ,  H01L21/316 ,  H01L21/768 ,  H01L21/469

CPC分类号： C23C16/517 ,  C23C16/30 ,  H01L21/3127 ,  H01L21/314 ,  Y10S438/958

摘要： The method for forming an insulating film having a low dielectric constant, which is suitable for intermetal insulating film applications, by plasma enhanced chemical vapor deposition (PECVD) includes the step of supplying a first source gas containing fluorine and carbon to a dual-frequency, high density plasma reactor. The method also includes the step of supplying a second source gas containing silicon dioxide to the reactor. In this manner a fluorocarbon/silicon dioxide film is formed on a substrate in the reactor.

摘要翻译： 通过等离子体增强化学气相沉积（PECVD）形成适合于金属间绝缘膜应用的具有低介电常数的绝缘膜的方法包括将含有氟和碳的第一源气体供应到双频， 高密度等离子体反应器。 该方法还包括向反应器供应含有二氧化硅的第二源气体的步骤。 以这种方式，在反应器中的基底上形成碳氟化合物/二氧化硅膜。

公开(公告)号：US08643088B2

公开(公告)日：2014-02-04

申请号：US12957100

申请日：2010-11-30

申请人： Jin Won Park

发明人： Jin Won Park

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L23/34

CPC分类号： H01L27/10876 ,  H01L29/66666

摘要： The present invention relates to a semiconductor device and a method of manufacture thereof, particularly, to a semiconductor device including a vertical type gate and a method of forming the same. According to the present invention, a semiconductor device includes a vertical pillar which is protruded from a semiconductor substrate, has a vertical channel, and has a first width; an insulating layer which has a second width smaller than the first width, provided in both sides of the vertical pillar which is adjacent in a first direction; and a nitride film provided in a side wall of the insulating layer.

摘要翻译： 半导体器件及其制造方法技术领域本发明涉及一种半导体器件及其制造方法，特别涉及包括垂直型栅极的半导体器件及其形成方法。 根据本发明，半导体器件包括从半导体衬底突出的垂直柱，具有垂直沟道，并具有第一宽度; 绝缘层，其具有比所述第一宽度小的第二宽度，设置在所述垂直柱的在第一方向上相邻的两侧; 以及设置在绝缘层的侧壁中的氮化物膜。

公开(公告)号：US08223282B2

公开(公告)日：2012-07-17

申请号：US13243505

申请日：2011-09-23

申请人： Hye-ran You ,  Yoon-sung Um ,  Jae-jin Lyu ,  Seung-beom Park ,  Jin-won Park ,  Hoon Kim

发明人： Hye-ran You ,  Yoon-sung Um ,  Jae-jin Lyu ,  Seung-beom Park ,  Jin-won Park ,  Hoon Kim

IPC分类号： G02F1/1343

CPC分类号： G02F1/13624 ,  G02F1/136213 ,  G02F2001/134345

摘要： A display apparatus including a plurality of gate lines, a data line intersecting the plurality of gate lines; a first pixel unit connected with a n-th gate line of the plurality of gate lines and the data line. A second pixel unit connected with a (n+1)-th gate line of the plurality of gate lines; and a coupling capacitor disposed between the first pixel unit and the second pixel unit, wherein the first pixel unit comprises a first liquid crystal capacitor and a first thin film transistor (TFT), the second pixel unit comprises a second liquid crystal capacitor and a second thin film transistor (TFT), and a source electrode and a drain electrode of the second TFT are connected with both electrodes of the coupling capacitor, respectively.

摘要翻译： 一种显示装置，包括多条栅极线，与多条栅极线相交的数据线; 与多条栅极线的第n条栅极线和数据线连接的第一像素单元。 与所述多个栅极线中的第（n + 1）栅极线连接的第二像素单元; 以及设置在所述第一像素单元和所述第二像素单元之间的耦合电容器，其中所述第一像素单元包括第一液晶电容器和第一薄膜晶体管（TFT），所述第二像素单元包括第二液晶电容器和第二液晶电容器 薄膜晶体管（TFT），第二TFT的源电极和漏电极分别与耦合电容器的两个电极连接。

公开(公告)号：US20120001255A1

公开(公告)日：2012-01-05

申请号：US12957100

申请日：2010-11-30

申请人： Jin Won PARK

发明人： Jin Won PARK

IPC分类号： H01L29/78 ,  H01L21/302

CPC分类号： H01L27/10876 ,  H01L29/66666

摘要： The present invention relates to a semiconductor device and a method of manufacture thereof, particularly, to a semiconductor device including a vertical type gate and a method of forming the same. According to the present invention, a semiconductor device includes a vertical pillar which is protruded from a semiconductor substrate, has a vertical channel, and has a first width; an insulating layer which has a second width smaller than the first width, provided in both sides of the vertical pillar which is adjacent in a first direction; and a nitride film provided in a side wall of the insulating layer.

摘要翻译： 半导体器件及其制造方法技术领域本发明涉及一种半导体器件及其制造方法，特别涉及包括垂直型栅极的半导体器件及其形成方法。 根据本发明，半导体器件包括从半导体衬底突出的垂直柱，具有垂直沟道，并具有第一宽度; 绝缘层，其具有比所述第一宽度小的第二宽度，设置在所述垂直柱的在第一方向上相邻的两侧; 以及设置在绝缘层的侧壁中的氮化物膜。

公开(公告)号：US07842336B2

公开(公告)日：2010-11-30

申请号：US11627058

申请日：2007-01-25

申请人： Jin-Won Park ,  Ji-Won Sohn ,  Seung-Beom Park ,  Seon-Ah Cho

发明人： Jin-Won Park ,  Ji-Won Sohn ,  Seung-Beom Park ,  Seon-Ah Cho

IPC分类号： B05D5/06

CPC分类号： G02F1/133516 ,  G02F2001/133519 ,  Y10T428/31504

摘要： The invention relates to a method of forming an overcoat layer, containing a hydrophobic functional group and a hydrophilic functional group, that omits a post-treatment process after the overcoat layer is formed. The invention also relates to a method of producing a color filter substrate, as well as a color filter substrate and a liquid crystal display produced using the same. The method of forming an overcoat layer includes adding an initiator to polymerizable surfactant monomers, coating the polymerizable surfactant monomers, polymerizing the coated polymerizable surfactant monomers, and forming the overcoat layer through a polymerization reaction of the polymerizable surfactant monomers.

摘要翻译： 本发明涉及在形成外涂层之后，省略后处理工艺的形成含有疏水官能团和亲水性官能团的外涂层的方法。 本发明还涉及一种制造滤色器基板的方法，以及滤色器基板和使用其制造的液晶显示器。 形成外涂层的方法包括在可聚合表面活性剂单体中加入引发剂，涂布可聚合表面活性剂单体，聚合涂覆的可聚合表面活性剂单体，并通过可聚合表面活性剂单体的聚合反应形成外涂层。