公开(公告)号：US07790618B2

公开(公告)日：2010-09-07

申请号：US11019882

申请日：2004-12-22

申请人： Jinru Bian

发明人： Jinru Bian

IPC分类号： H01L21/302

CPC分类号： C09G1/02 ,  H01L21/31053 ,  H01L21/3212

摘要： An aqueous solution is useful for selective removal in the presence of a low-k dielectric. The aqueous solution comprises by weight percent 0 to 25 oxidizer; 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms; 0 to 15 inhibitor for a nonferrous metal; 0 to 50 abrasive; 0 to 20 complexing agent for a nonferrous metal; and water.

摘要翻译： 水溶液可用于在低k电介质存在下的选择性去除。 该水溶液包含0至25重量％的氧化剂; 0.00002〜5的多组分表面活性剂，具有疏水性尾部的多组分表面活性剂，非离子亲水部分和阴离子亲水部分，所述疏水性尾部具有6〜30个碳原子，所述非离子亲水部分具有10〜300个碳原子; 0〜15有色金属抑制剂; 0至50磨料; 0〜20有色金属络合剂; 和水。

公开(公告)号：US20050282390A1

公开(公告)日：2005-12-22

申请号：US11199639

申请日：2005-08-09

申请人： Jinru Bian ,  John Quanci ,  Matthew VanHanehem

发明人： Jinru Bian ,  John Quanci ,  Matthew VanHanehem

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/302

CPC分类号： C09G1/02

摘要： An aqueous composition is useful for polishing semiconductor wafers. The composition comprises a nonionic surfactant that suppresses removal rate of silicon carbide-nitride and has a hydrophilic group and a hydrophobic group. The hydrophobic group has a carbon chain length of greater than three. And the nonionic surfactant suppresses silicon carbide-nitride removal rate at least 100 angstroms per minute greater than its decrease in silicon nitride removal rate as measured with a microporous polyurethane polishing pad pressure measured normal to a wafer of 13.8 kPa.

公开(公告)号：US20050070211A1

公开(公告)日：2005-03-31

申请号：US10670587

申请日：2003-09-25

申请人： Jinru Bian

发明人： Jinru Bian

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/321 ,  B24B1/00 ,  B24C1/00

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.

摘要翻译： 抛光液可用于研磨半导体衬底的含钽阻挡材料。 抛光液包括含有至少两个含有亚胺化合物和肼化合物的氮原子的含氮化合物。 含氮化合物不含吸电子取代基; 并且抛光液能够从磨料的表面除去含钽阻挡材料。

公开(公告)号：US07767581B2

公开(公告)日：2010-08-03

申请号：US11437299

申请日：2006-05-19

申请人： Jinru Bian

发明人： Jinru Bian

IPC分类号： C09G1/02

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.

摘要翻译： 抛光液可用于研磨半导体衬底的含钽阻挡材料。 抛光液包括含有至少两个含有亚胺化合物和肼化合物的氮原子的含氮化合物。 含氮化合物不含吸电子取代基; 并且抛光液能够从磨料的表面除去含钽阻挡材料。

公开(公告)号：US20090031636A1

公开(公告)日：2009-02-05

申请号：US11890182

申请日：2007-08-03

申请人： Qianqiu Ye ,  Jinru Bian

发明人： Qianqiu Ye ,  Jinru Bian

IPC分类号： C09K13/00

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： The aqueous slurry is useful for chemical mechanical polishing a semiconductor substrate having copper interconnects. The slurry contains by weight percent, 0 to 25 oxidizing agent, 0.1 to 50 abrasive particles, 0.001 to 5 polyvinyl pyrrolidone, 0.00002 to 5 multi-component surfactant, the multi-component surfactant having a hydrophobic tail, a nonionic hydrophilic portion and an anionic hydrophilic portion, the hydrophobic tail having 6 to 30 carbon atoms and the nonionic hydrophilic portion having 10 to 300 carbon atoms, 0.001 to 10 inhibitor for decreasing static etch of the copper interconnects, 0 to 5 phosphorus-containing compound for increasing removal rate of the copper interconnects, 0.001 to 10 complexing agent formed during polishing and balance water.

摘要翻译： 含水浆料可用于化学机械抛光具有铜互连的半导体衬底。 浆料含有重量百分数，0-25氧化剂，0.1-50磨料颗粒，0.001至5聚乙烯吡咯烷酮，0.00002至5多组分表面活性剂，多组分表面活性剂具有疏水尾，非离子亲水部分和阴离子 亲水部分，具有6至30个碳原子的疏水尾部和具有10至300个碳原子的非离子亲水部分，0.001至10个用于减少铜互连的静态蚀刻的抑制剂，0至5个含磷化合物，用于提高 铜互连，在抛光过程中形成0.001至10个络合剂并平衡水。

公开(公告)号：US06936541B2

公开(公告)日：2005-08-30

申请号：US10402168

申请日：2003-03-28

申请人： Jinru Bian ,  Tirthankar Ghosh ,  Terence M. Thomas

发明人： Jinru Bian ,  Tirthankar Ghosh ,  Terence M. Thomas

IPC分类号： B24B37/005 ,  B24B37/04 ,  C09G1/00 ,  C09G1/02 ,  H01L21/321 ,  H01L21/302

CPC分类号： H01L21/3212 ,  B24B37/0056 ,  B24B37/044 ,  C09G1/00 ,  C09G1/02

摘要： A method for planarizing metal interconnects of a semiconductor wafer includes the steps of polishing the semiconductor wafer with a polishing solution and a polishing pad to planarize the metal interconnects. The polishing solution has by weight percent, 0.15 to 5 benzotriazole, 0 to 1 abrasive, 0 to 10 polymeric particles, 0 to 5 polymer-coated particles and balance water at a pH of less than 5 and a removal rate-pressure sensitivity (dr/dp) of at least 750 (Å/min/psi). The polishing simultaneously accelerates removal of projecting metal from the metal interconnects with the polishing pad providing a first pressure that increases removal rate of the projecting metal; and it inhibits removal of recessed metal from the metal interconnects with the polishing pad providing a second pressure that decreases removal of the recessed metal.

摘要翻译： 用于平面化半导体晶片的金属互连的方法包括以下步骤：用抛光溶液和抛光垫对半导体晶片进行抛光，以平坦化金属互连。 抛光溶液的重量百分数为0.15至5苯并三唑，0至1份磨料，0至10种聚合物颗粒，0至5种聚合物涂覆的颗粒，并且在pH小于5的情况下平衡水和去除率 - 压力敏感度（d 至少750（Å/ min / psi）。 抛光同时加速从抛光垫从金属互连件移除突出的金属，提供提高突出金属的去除速率的第一压力; 并且其抑制了从抛光垫从金属互连件去除凹陷金属，从而提供减小凹陷金属去除的第二压力。

公开(公告)号：US20050066585A1

公开(公告)日：2005-03-31

申请号：US10670534

申请日：2003-09-25

申请人： Jinru Bian ,  Kai Hu ,  Hugh Li ,  Zhendong Liu ,  John Quanci ,  Matthew VanHanehem

发明人： Jinru Bian ,  Kai Hu ,  Hugh Li ,  Zhendong Liu ,  John Quanci ,  Matthew VanHanehem

IPC分类号： B24B37/00 ,  C09G1/02 ,  C09K3/14 ,  H01L21/304 ,  H01L21/3105 ,  H01L21/321 ,  B24D3/02

CPC分类号： H01L21/3212 ,  C09G1/02 ,  H01L21/31053

摘要： The solution is useful for removing a barrier material from a semiconductor substrate. The solution comprises, by weight percent, 0.01 to 25 oxidizer, 0 to 15 inhibitor for a nonferrous metal, 0 to 15 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent and balance water. The barrier removal agent is selected from the group comprising imine derivative compounds, hydrazine derivative compounds and mixtures thereof.

摘要翻译： 该解决方案可用于从半导体衬底去除阻挡材料。 该溶液包含0.01-25重量％的氧化剂，0至15的有色金属抑制剂，0至15份磨料，0至20种有色金属络合剂，0.01至12种屏障去除剂和余量水。 屏障去除剂选自亚胺衍生物化合物，肼衍生物化合物及其混合物。

公开(公告)号：US07988878B2

公开(公告)日：2011-08-02

申请号：US10952999

申请日：2004-09-29

申请人： Jinru Bian

发明人： Jinru Bian

IPC分类号： C09K13/00

CPC分类号： C09K3/1463 ,  C09G1/02 ,  H01L21/3212

摘要： The polishing solution is useful for removing a barrier from a semiconductor substrate. The solution contains by weight percent 0.001 to 25 oxidizer, 0.0001 to 5 anionic surfactant, 0 to 15 inhibitor for a nonferrous metal, 0 to 40 abrasive, 0 to 20 complexing agent for the nonferrous metal, 0.01 to 12 barrier removal agent selected from imine derivative compounds, hydrazine derivative compounds and mixtures thereof, and water; and the solution has an acidic pH.

摘要翻译： 抛光溶液可用于从半导体衬底去除阻挡层。 该溶液含有0.001至25重量％的氧化剂，0.0001至5个阴离子表面活性剂，0至15个有色金属抑制剂，0至40个研磨剂，0至20个有色金属络合剂，0.01至12个选自亚胺的屏障去除剂 衍生化合物，肼衍生物化合物及其混合物和水; 并且溶液具有酸性pH。

公开(公告)号：US07842192B2

公开(公告)日：2010-11-30

申请号：US11349863

申请日：2006-02-08

申请人： Jinru Bian ,  Zhendong Liu

发明人： Jinru Bian ,  Zhendong Liu

IPC分类号： C09K13/00

CPC分类号： H01L21/3212 ,  C09G1/02

摘要： The polishing solution is useful for removing barrier materials in the presence of at least one nonferrous interconnect metal with limited erosion of dielectrics. The solution contains 0 to 20 weight percent oxidizer, at least 0.001 weight percent inhibitor for reducing removal rate of the nonferrous interconnect metals, 1 ppm to 4 weight percent organic-containing ammonium cationic salt formed with a quanternary ammonium structure, 1 ppm to 4 weight percent anionic surfactant, the anionic surfactant having 4 to 25 carbon atoms and the total carbon atoms in of the ammonium cationic salt plus the anionic surfactant being 6 to 40 carbon atoms, 0 to 50 weight percent abrasive and balance water; and the solution having a pH of less than 7.

摘要翻译： 在至少一种具有有限的电介质腐蚀的有色互连金属的存在下，抛光溶液可用于去除阻挡材料。 该溶液含有0至20重量百分比的氧化剂，至少0.001重量％的用于降低有色互连金属去除速率的抑制剂，1ppm至4重量％的由铵季铵结构形成的含铵阳离子盐，1ppm至4重量％ 阴离子表面活性剂，阴离子表面活性剂具有4至25个碳原子，铵阳离子盐加阴离子表面活性剂的总碳原子数为6至40个碳原子，0至50重量％的研磨剂和余量的水; 并且该溶液的pH值小于7。

公开(公告)号：US20060207635A1

公开(公告)日：2006-09-21

申请号：US11437299

申请日：2006-05-19

申请人： Jinru Bian

发明人： Jinru Bian

IPC分类号： C11D7/32 ,  B08B7/00

CPC分类号： C09G1/02 ,  H01L21/3212

摘要： The polishing fluid is useful for polishing tantalum-containing barrier materials of a semiconductor substrate. The polishing fluid includes a nitrogen-containing compound having at least two nitrogen atoms comprising imine compounds and hydrazine compounds. The nitrogen-containing compound is free of electron-withdrawing substituents; and the polishing fluid is capable of removing the tantalum-containing barrier materials from a surface of the semiconductor substrate without an abrasive.

摘要翻译： 抛光液可用于研磨半导体衬底的含钽阻挡材料。 抛光液包括含有至少两个含有亚胺化合物和肼化合物的氮原子的含氮化合物。 含氮化合物不含吸电子取代基; 并且抛光液能够从磨料的表面除去含钽阻挡材料。