DETECTION OF SUBSTRATE WARPING DURING RAPID THERMAL PROCESSING
    2.
    发明申请
    DETECTION OF SUBSTRATE WARPING DURING RAPID THERMAL PROCESSING 有权
    在快速热处理过程中检测基板的温度

    公开(公告)号:US20120308215A1

    公开(公告)日:2012-12-06

    申请号:US13153135

    申请日:2011-06-03

    申请人: Jiping Li

    发明人: Jiping Li

    IPC分类号: F27D11/12

    摘要: Apparatus and methods for detecting substrate warping during RTP processing are provided. In one embodiment, one or more beams of light are provided above and across the substrate being processed. In this embodiment, the amount of beam blockage correlates to the amount of substrate warping. In another embodiment, a beam of light is reflected off of a substrate during processing. In this embodiment, the amount of movement of the beam correlates to the amount of substrate warping. In yet another embodiment, a region of a substrate is illuminated during processing. In this embodiment, images of the illuminated region are analyzed to determine the amount of substrate warping.

    摘要翻译: 提供了用于在RTP处理期间检测基板翘曲的装置和方法。 在一个实施例中,一个或多个光束被提供在被处理的衬底之上和之上。 在该实施例中,光束阻塞的量与基板翘曲的量相关。 在另一个实施例中,在处理期间,光束被从衬底反射出来。 在该实施例中,光束的移动量与基板翘曲量相关。 在另一个实施例中,衬底的区域在处理期间被照亮。 在该实施例中,分析照明区域的图像以确定基板翘曲的量。

    Defect-free junction formation using laser melt annealing of octadecaborane self-amorphizing implants
    3.
    发明授权
    Defect-free junction formation using laser melt annealing of octadecaborane self-amorphizing implants 有权
    使用十八硼烷自身无定形植入物的激光熔融退火的无缺陷结形成

    公开(公告)号:US08067302B2

    公开(公告)日:2011-11-29

    申请号:US12563746

    申请日:2009-09-21

    申请人: Jiping Li

    发明人: Jiping Li

    IPC分类号: H01L21/26

    摘要: A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then melted, resolidified, and annealed to completely dissociate and activate the boron clusters.

    摘要翻译: 一种用硼簇植入半导体衬底的方法和装置。 通过等离子体浸渍或离子束注入,注入十八硼烷衬底。 然后将衬底表面熔化,重新固化和退火,以完全解离并活化硼簇。

    METHOD AND BASE STATION FOR SENDING INFORMATION
    4.
    发明申请
    METHOD AND BASE STATION FOR SENDING INFORMATION 有权
    发送信息的方法和基站

    公开(公告)号:US20110212742A1

    公开(公告)日:2011-09-01

    申请号:US13106272

    申请日:2011-05-12

    申请人: De CHEN Jiping Li

    发明人: De CHEN Jiping Li

    IPC分类号: H04W24/04

    摘要: The present invention relates to mobile communication technologies, and in particular, to a method, base station and system for sending information. The method includes: obtaining discontinuous reception (DRX) parameter of a terminal; determining discontinuous transmission (DTX) parameter of the base station according to the DRX parameter; and sending pilot and broadcast information periodically according to the DTX parameter. The technical solution under the present invention saves time-frequency resources, reduces interference on neighboring cells, and saves electric power.

    摘要翻译: 本发明涉及移动通信技术,特别涉及用于发送信息的方法,基站和系统。 该方法包括:获得终端的不连续接收(DRX)参数; 根据DRX参数确定基站的不连续传输(DTX)参数; 并根据DTX参数定期发送导频和广播信息。 本发明的技术方案节省了时间频率资源,减少了对相邻小区的干扰,节省了电力。

    DEFECT-FREE JUNCTION FORMATION USING LASER MELT ANNEALING OF OCTADECABORANE SELF-AMORPHIZING IMPLANTS
    8.
    发明申请
    DEFECT-FREE JUNCTION FORMATION USING LASER MELT ANNEALING OF OCTADECABORANE SELF-AMORPHIZING IMPLANTS 有权
    使用激光熔覆的OCTFAECABORANE自激式植入物的无缺陷断层形成

    公开(公告)号:US20100075490A1

    公开(公告)日:2010-03-25

    申请号:US12563746

    申请日:2009-09-21

    申请人: Jiping Li

    发明人: Jiping Li

    IPC分类号: H01L21/26

    摘要: A method and apparatus for implanting a semiconductor substrate with boron clusters. A substrate is implanted with octadecaborane by plasma immersion or ion beam implantation. The substrate surface is then melted, resolidified, and annealed to completely dissociate and activate the boron clusters.

    摘要翻译: 一种用硼簇植入半导体衬底的方法和装置。 通过等离子体浸渍或离子束注入,注入十八硼烷衬底。 然后将衬底表面熔化,重新固化和退火,以完全解离并活化硼簇。