摘要:
A mass flow sensor having a thin substrate and a resistor element arranged on the thin substrate. The thin substrate is stretched on a fixed substrate. In a stretched area, at which, in response to mechanical loading of the thin substrate, the mechanical stresses concentrate, a resistor element for detecting ruptures is arranged. As a result of a rupture in the stretched area, this rupture-detection resistor is interrupted, and the rupture can be confirmed due to the sudden increase in the resistance of the resistor, caused thereby.
摘要:
A contacting of a capacitive accelerometer sensor of monocrystalline material is achieved by a capacitive accelerometer sensor having a structure etched out of a monocrystalline layer arranged on a substrate, including a seismic mass that is only joined to the substrate by suspension segments and executing a movement in its longitudinal direction in response to the occurrence of an acceleration of parallel, plate-like first fingers extending out from this mass at right angles to their longitudinal direction and of plate-like second fingers running parallel to the first fingers and anchored to the substrate. The first and second fingers form a capacitor arrangement. The suspension segments, which are anchored with their end region that is distant from the seismic mass to the substrate, and second fingers are electrically isolated, by an isolation strip, from the other remaining layer of monocrystalline material. A passivation layer extends over the isolation strip, and at least partially over the remaining layer. Conductors arranged on the passivation layer and serving as connecting leads for the capacitor arrangement extend across the isolation strip up to the connections of the capacitor arrangement, and are contacted there.
摘要:
A semiconductor plate having an epitaxial layer of a conductivity type opposite to that of the substrate on which it is formed has a depression, including one or more elongate channels. The depression is etched into a depth passing entirely through the epitaxial layer to isolate at least one tongue extending from a tongue pedestal into the etched depression and having parallel major sides which are perpendicular to the principal planes of the semiconductor plate. The tongue is under-etched so that it will be free to vibrate by motion in directions parallel to the principal planes of the plate. One of the major sides of the tongue faces a stationary electrode across a gap and the electrode and the tongue are insulated from each other, at least in one embodiment, by the fact that the etched depression extends all the way through the epitaxial layer in its depth. Deflection or vibration of the tongue changes the capacitance between the electrode and the tongue and contacts are provided for measuring the capacitance. Various embodiments utilizing multiple tongues and one or more electrodes are shown.
摘要:
The capacitive proximity sensor for motor vehicles comprises a capacitance-measuring device for measuring the capacitance between at least one capacitor plate (1) which is fixed to the motor vehicle, on the one hand, and the environment, on the other hand, and an indicator for receiving the output signal of the measuring device.To provide a proximity sensor in which the disturbing and parasitary capacitances occurring in practice are particularly taken into account, the output signal S.sub.c of the capacitance-measuring device (5) is delivered to an amplifier (6), which is provided with a degenerative feedback loop (9) comprising a storage device (11) and a switch (10) so that the output signal (s.sub.A) of the amplifier (6) is held constant during normal travel, and the switch (10) is opened to interrupt the degenerative feedback loop (9) for a measurement. The switch is closed when the measurement has been completed.
摘要:
The pressure sensor for a combustion chamber includes a housing; a membrane closing the housing on its combustion chamber side; a monocrystalline silicon chip inside the housing and including a sensor circuit device provided with a bridge circuit device including a piezoresistor producing an electrical signal in response to applied pressure and a plunger positioned between the membrane and the silicon chip to transmit a pressure in the combustion chamber to the piezoresistor. The bridge circuit device is connected to an amplifier circuit located on the silicon chip. The amplifier circuit includes amplifier resistors having resistance values determinative of the offset of the signal and sensor sensitivity. A network circuit for offset and sensitivity adjustments is provided on the silicon chip and includes four adjusting circuits for offset, sensor sensitivity, temperature compensation of offset and for temperature compensation of sensor sensitivity. Each adjusting circuit includes parallel-connected adjusting circuit branches each including an adjusting resistor and a semiconductor element in series. The adjusting circuit branches of respective adjusting circuits are connected in parallel with respective amplifier resistors. A logic circuit also provided on the silicon chip is used to make predetermined semiconductor elements electrically conductive so that predetermined adjusting circuit branches can be made conductive with a resistance determined by the adjusting resistors in the predetermined adjusting circuit branches to make the respective adjustments.
摘要:
An acceleration sensor and a method of making an acceleration sensor is described in which a movable sensor element is located in a hollow space formed in the middle of three silicon plates. During production, air can be removed from the hollow space through a hole in one of the two outer plates. The hole is then closed by an additional plate, which allows for a defined pressure to be set in the hollow space.
摘要:
An integrated circuit having an adjusting component and an adjustable thyristor allows an especially small chip surface to be used. The integrated circuit has a control unit, by means of which the adjusting component is irreversibly switched. The thyristor is designed as a planar component.
摘要:
A device for one-sided etching of a semiconductor wafer (silicon wafer) is proposed, which consists in the manner of an etching box of a trough-shaped basic body (3, 23) and a lid (2, 22) which matches the latter hermetically. The lid (2, 22) has on the topside an opening (5, 25) for the passage of the etching liquid. The etching box bears at least two O-rings (7, 8, 27, 28), of which one is arranged centrally in the basic body (3, 23) and the other centrally in the lid (2, 22). The wafer (1) is clamped between the O-rings (7, 8, 27, 28). A wire (10) connected to the wafer by means of a plate of a spring contact (11, 41) is guided out of the etching box through a bore (4) extending through the basic body (3, 23).
摘要:
From a silicon block or wafer a stationary frame is shaped and a seismic mass which is displaceable in rotation is mounted within the frame. The seismic mass is symmetrically suspended in the frame by two pairs of oppositely located flexible strips and either piezoresistive or capacitive detection of rotation is provided by the strips, the capacitive detection beeing provided with the help of parallel stationary electrodes connected to and insulated in the frame. In another embodiment an anchor stud in the center of the frame has two flexible interlaced spirals extending therefrom and their respective outer turns carry radial disposed masses with finger structures extending circumferentially in both directions. Stationary finger structures are provided to provide interfitting variable capacitors sensitive to rotary displacements.
摘要:
A microwave is made of a stack of layers. A sculptured silicon substrate is held between two covers each consisting of one or more layers. The inlet and the outlet of the microvalve are formed by perforations in the respective covers. A central valve plate is sculptured out of the silicon substrate with surfaces respectively facing the two covers in the region of the inlet and outlet in a symmetrical fashion. The valve plate is connected to the outer frame portion of the silicon substrate by one or more silicon strips. The valve plate is also shaped as a closure member near the inlet and/or the outlet. Electrodes are provided on the covers opposite the valve plate so that the valve can be electrostatically actuated with the valve plate serving as counterelectrode for these electrodes on the covers.