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    Method to make an integrated side shield PMR head with non conformal side gap
    2.
    发明授权
    Method to make an integrated side shield PMR head with non conformal side gap 有权
    制造具有非保形侧间隙的集成侧屏PMR头的方法

    公开(公告)号：US08031433B2

    公开(公告)日：2011-10-04

    申请号：US12231756

    申请日：2008-09-05

    申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

    发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

    摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

    摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

    Method to make a perpendicular magnetic recording head with a side write shield
    3.
    发明申请
    Method to make a perpendicular magnetic recording head with a side write shield 有权
    制作具有侧面写入屏蔽层的垂直磁记录头的方法

    公开(公告)号：US20110146060A1

    公开(公告)日：2011-06-23

    申请号：US12932552

    申请日：2011-02-28

    申请人： Cherng-Chyi Han ,  Min Li ,  Fenglin Liu ,  Jiun-Ting Lee

    发明人： Cherng-Chyi Han ,  Min Li ,  Fenglin Liu ,  Jiun-Ting Lee

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3163 ,  G11B5/11 ,  G11B5/1278 ,  G11B5/3116 ,  G11B5/3146 ,  G11B5/315 ,  Y10T29/49032 ,  Y10T29/49039 ,  Y10T29/49043 ,  Y10T29/49044 ,  Y10T29/49046 ,  Y10T29/49048 ,  Y10T29/49052

    摘要： A perpendicular magnetic recording (PMR) head is fabricated with a pole tip shielded laterally by a separated pair of side shields and shielded from above by an upper shield. The side shields are formed by a RIE process using specific gases applied to a shield layer through a masking layer formed of material that has a slower etch rate than the shield material. A masking layer of Ta, Ru/Ta, TaN or Ti, formed on a shield layer of NiFe and using RIE gases of CH3OH, CO or NH3 or their combinations, produces the desired result. The differential in etch rates maintains the opening dimension within the mask and allows the formation of a wedge-shaped trench within the shield layer that separates the layer into two shields. The pole tip is then plated within the trench and, being aligned by the trench, acquires the wedge-shaped cross-section of the trench. An upper shield is then formed above the side shields and pole.

    摘要翻译： 垂直磁记录（PMR）头被制造成具有通过分离的一对侧屏蔽横向屏蔽的极尖并且被上屏蔽从上面屏蔽。 侧面屏蔽是通过RIE工艺形成的，其使用通过掩模层施加到屏蔽层上的特定气体，该屏蔽层由具有比屏蔽材料更慢的蚀刻速率的材料形成。 形成在NiFe的屏蔽层上并使用CH 3 OH，CO或NH 3的RIE气体或其组合的Ta，Ru / Ta，TaN或Ti的掩蔽层产生期望的结果。 蚀刻速率的差异保持了掩模内的开口尺寸，并且允许在屏蔽层内形成将该层分成两个屏蔽层的楔形沟槽。 然后将磁极尖端电镀在沟槽内，并且通过沟槽对准，获得沟槽的楔形横截面。 然后在侧屏和极上方形成上屏蔽。

    PMR with improved writability and process controllability by double layer patterning
    4.
    发明申请
    PMR with improved writability and process controllability by double layer patterning 有权
    PMR具有改进的可编写性和工艺可控性，通过双层图案化

    公开(公告)号：US20080316644A1

    公开(公告)日：2008-12-25

    申请号：US11820962

    申请日：2007-06-21

    申请人： Jiun-Ting Lee ,  Shiwen Huang ,  Moris Dovek

    发明人： Jiun-Ting Lee ,  Shiwen Huang ,  Moris Dovek

    IPC分类号： G11B5/127 ,  G11B5/147 ,  B44C1/22

    CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49052

    摘要： Improved writability and a sharper neck transition are achieved in a PMR writer with a yoke that has essentially vertical sidewalls and a write pole that has sidewalls with a beveled angle. An alumina mold is made with a negative differential bevel angle by employing a two mask process. A first photoresist layer is patterned and etched to form a rectangular trench in an alumina layer. The trench extends beyond the intended ABS plane and in the opposite direction into the intended yoke area. A second photoresist layer is patterned into a yoke shape that is partially superimposed over the rectangular trench. After a second RIE process, the yoke opening adjoins the trench at a neck transition point along each long trench side. The volume of magnetic material in the yoke adjacent to the neck is thereby maximized. Dimension control of the main pole becomes independent of ABS positioning errors.

    摘要翻译： 在具有基本垂直侧壁的磁轭和具有倾斜角度的侧壁的写入极的PMR写入器中实现了改进的可写入性和更尖锐的颈部转变。 通过采用两个掩模工艺制造具有负微分斜角的氧化铝模具。 对第一光致抗蚀剂层进行图案化和蚀刻以在氧化铝层中形成矩形沟槽。 沟槽延伸超出预期的ABS平面并且在相反方向延伸到预期的轭区域中。 将第二光致抗蚀剂层图案化为部分地叠置在矩形沟槽上的磁轭形状。 在第二次RIE处理之后，磁轭开口在沿着每个长沟槽侧的颈部转变点处与沟槽相邻。 因此，与颈部相邻的磁轭中的磁性材料的体积最大化。 主极的尺寸控制变得与ABS定位误差无关。

    Resolution and process window improvement using lift-off
    5.
    发明授权
    Resolution and process window improvement using lift-off 有权
    使用剥离的分辨率和过程窗口改进

    公开(公告)号：US06866987B2

    公开(公告)日：2005-03-15

    申请号：US10371517

    申请日：2003-02-20

    申请人： Jiun-Ting Lee

    发明人： Jiun-Ting Lee

    IPC分类号： G03F7/095 ,  G03C5/00 ,  G03F1/00 ,  G03F1/36 ,  G03F7/20 ,  G03F7/40 ,  G03F9/00 ,  G11B5/127 ,  G11B5/39 ,  H01L21/027

    CPC分类号： G03F1/36 ,  Y10T29/49021

    摘要： The invention teaches how to image and etch very narrow and isolated features without resorting to expensive OPC measures. Assist features are placed close to the main feature so that the local pattern density becomes semi-dense or dense and the pattern is imaged in a bilayer suitable for use in liftoff. The lower (easily etched) layer is then exposed to a suitable solvent so that the upper (etch resistant) layer is slowly undercut. Undercutting can be terminated as long as all the assist features have been lifted off. Although the original isolated feature will, in most cases, also have all of its lower layer removed, it does not lift off because, as a requirement of the process, at least one of its ends remains connected to an area of photoresist that is too wide to be fully undercut.

    摘要翻译： 本发明教导了如何在不采取昂贵的OPC措施的情况下对非常狭窄和孤立的特征进行成像和蚀刻。 辅助功能靠近主要特征，使得局部图案密度变成半致密或致密，并且图案被成像为适合用于提升的双层。 然后将较低（易蚀刻）的层暴露于合适的溶剂，使得上（抗蚀刻）层缓慢地被切削。 只要所有的辅助功能已经解除，底切即可终止。 尽管在大多数情况下，原始隔离特征也将使其所有的下层都被去除，但是它不会脱落，因为根据该过程的要求，其端部中的至少一端仍然连接到太阳能光致抗蚀剂的区域 广泛被彻底削弱。

    Method to make an integrated side shield PMR head with non-conformal side gap
    7.
    发明申请
    Method to make an integrated side shield PMR head with non-conformal side gap 有权
    制造具有非保形侧隙的集成侧屏PMR头的方法

    公开(公告)号：US20120012555A1

    公开(公告)日：2012-01-19

    申请号：US13200305

    申请日：2011-09-22

    申请人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

    发明人： Cherng-Chyi Yan ,  Feiyue Li ,  Shiwen Huang ,  Jiun-Ting Lee ,  Yoshitaka Sasaki

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3146 ,  G11B5/1278 ,  G11B5/1871 ,  G11B5/23 ,  G11B5/3116 ,  G11B5/315 ,  G11B5/3163

    摘要： A non-conformal integrated side shield structure is disclosed for a PMR write head wherein the sidewalls of the side shield are not parallel to the pole tip sidewalls. Thus, the side gap distance between the leading pole tip edge and side shield is different than the side gap distance between the trailing pole tip edge and side shield. As a result, there is a reduced side fringing field and improved overwrite performance. The side gap distance is constant with increasing distance from the ABS along the main pole layer. A fabrication method is provided where the trailing shield and side shield are formed in the same step to afford a self-aligned shield structure. Adjacent track erasure induced by flux choking at the side shield and trailing shield interface can be eliminated by this design. The invention encompasses a tapered main pole layer in a narrow pole tip section.

    摘要翻译： 公开了一种用于PMR写头的不共形的集成侧屏蔽结构，其中侧屏蔽的侧壁不平行于极端侧壁。 因此，前导极端部边缘和侧面屏蔽件之间的侧面间隙距离不同于后部极端部边缘和侧面屏蔽之间的侧面间隙距离。 结果，边缘边缘减小，覆盖性能得到改善。 侧面间隙距离随着距离主电极层距离ABS的距离不断增加。 提供一种制造方法，其中在同一步骤中形成后屏蔽和侧屏蔽以提供自对准屏蔽结构。 通过这种设计可以消除由侧屏蔽和后屏蔽界面处的通量阻塞引起的相邻轨道擦除。 本发明包括窄极端部分中的锥形主极层。

    PMR with improved writability and process controllability by double layer patterning
    8.
    发明申请
    PMR with improved writability and process controllability by double layer patterning 审中-公开
    PMR具有改进的可编写性和工艺可控性，通过双层图案化

    公开(公告)号：US20120008236A1

    公开(公告)日：2012-01-12

    申请号：US13200012

    申请日：2011-09-15

    申请人： Jiun-Ting Lee ,  Shiwen Huang ,  Moris Dovek

    发明人： Jiun-Ting Lee ,  Shiwen Huang ,  Moris Dovek

    IPC分类号： G11B5/127

    CPC分类号： G11B5/3116 ,  G11B5/1278 ,  G11B5/3163 ,  Y10T29/49052

    摘要： Improved writability and a sharper neck transition are achieved in a PMR writer with a yoke that has essentially vertical sidewalls and a write pole that has sidewalls with a beveled angle. An alumina mold is made with a negative differential bevel angle by employing a two mask process. A first photoresist layer is patterned and etched to form a rectangular trench in an alumina layer. The trench extends beyond the intended ABS plane and in the opposite direction into the intended yoke area. A second photoresist layer is patterned into a yoke shape that is partially superimposed over the rectangular trench. After a second RIE process, the yoke opening adjoins the trench at a neck transition point along each long trench side. The volume of magnetic material in the yoke adjacent to the neck is thereby maximized. Dimension control of the main pole becomes independent of ABS positioning errors.

    摘要翻译： 在具有基本垂直侧壁的磁轭和具有倾斜角度的侧壁的写入极的PMR写入器中实现了改进的可写入性和更尖锐的颈部转变。 通过采用两个掩模工艺制造具有负微分斜角的氧化铝模具。 对第一光致抗蚀剂层进行图案化和蚀刻以在氧化铝层中形成矩形沟槽。 沟槽延伸超过预期的ABS平面并且在相反方向延伸到预期的轭区域中。 将第二光致抗蚀剂层图案化为部分地叠置在矩形沟槽上的磁轭形状。 在第二次RIE处理之后，磁轭开口在沿着每个长沟槽侧的颈部转变点处与沟槽相邻。 因此，与颈部相邻的磁轭中的磁性材料的体积最大化。 主极的尺寸控制变得与ABS定位误差无关。