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    Demultiplexing photodetectors
    3.
    发明授权
    Demultiplexing photodetectors 失效
    解复用光检测器

    公开(公告)号：US4323911A

    公开(公告)日：1982-04-06

    申请号：US127942

    申请日：1980-03-07

    申请人： Joe C. Campbell ,  Tien P. Lee

    发明人： Joe C. Campbell ,  Tien P. Lee

    IPC分类号： H01L27/15 ,  H01L31/11 ,  H01L31/12 ,  H01L27/14 ,  H01L29/161

    CPC分类号： H01L31/11 ,  H01L27/15 ,  H01L31/125

    摘要： A 3-terminal totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary n-type layers (103 and 105) of indium gallium arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a layer (104) of n-type indium phosphide. The device is oriented so as to present the incoming radiation first to the quaternary layer having the larger bandgap and then to the quaternary layer having the lower bandgap. One of the contacts (111) is attached to the top layer (106) of n-type indium phosphide, a second contact (112) is attached to a central p-type region (110) established in the top layer of indium phosphide and penetrating through the top quaternary layer, and the third contact (113 or 302) is connected either to the indium phosphide substrate (101) or to a p-type outer region (301) that surrounds all of the layers. By reversing the dc potential applied to the junctions in the quaternary layers, a dual-wavelength light emitting diode is provided.

    摘要翻译： 公开了一种三端全集成解复用光电二极管，其中同时存在于两个波长处的信息可以被发展成在三个端子处可用的两个分离的电流。 具有不等带隙并且各自具有pn结的铟镓砷化镓的两个四元n型层（103和105）被n型磷化铟的层（104）隔开。 器件被定向成将入射辐射首先呈现到具有较大带隙的四元层，然后到具有较低带隙的四元层。 触点（111）中的一个连接到n型磷化铟的顶层（106）上，第二触点（112）连接到建立在磷化铟顶层中的中心p型区域（110）， 穿过顶部四周层，并且第三触点（113或302）连接到磷化铟基板（101）或连接到围绕所有层的p型外部区域（301）。 通过反转施加到四元层中的结的直流电位，提供了双波长发光二极管。

    Optical waveguides grown by selective liquid phase epitaxy
    4.
    发明授权
    Optical waveguides grown by selective liquid phase epitaxy 失效
    通过选择性液相外延生长的光波导

    公开(公告)号：US4116530A

    公开(公告)日：1978-09-26

    申请号：US709554

    申请日：1976-07-29

    申请人： David W. Bellavance ,  Joe C. Campbell

    发明人： David W. Bellavance ,  Joe C. Campbell

    IPC分类号： G02B6/125 ,  G02B6/13 ,  G02B5/14

    CPC分类号： G02B6/131 ,  G02B6/125

    摘要： This disclosure concerns optical waveguides of arcuate structure fabricated by selective liquid phase epitaxy. In integrated optical circuits requiring complex processing, it will be necessary to utilize at relatively low light losses bends, curves, and dividers in the waveguide section. The arcuate optical waveguides described herein have a region of higher index of refraction surrounded by lower effective index media to confine and propagate light between active components of an integrated optical circuit. Optical waveguides extending around bends are grown by selective liquid phase epitaxy employing a horizontal graphite boat with sliding compartments, wherein multiple layers of Ga.sub.1-x Al.sub.x As(0.ltoreq.x.ltoreq.0.3) are grown. For a relatively low radius of curvature where r.sub.c = 10 mils, the angle is dominated by a sharp facet, with the faceting slowly decreasing as the radius of curvature increases, until at r.sub.c = 25 mils, substantially smooth sides are formed around the bend of the optical waveguide. One specific configuration of an arcuate optical waveguide structure is a y-shaped waveguide, where each of its legs may have a different specific radius of curvature.

    摘要翻译： 本公开涉及通过选择性液相外延制造的弓形结构的光波导。 在需要复杂处理的集成光电路中，需要在波导部分中相对较低的光损耗弯曲，曲线和分频器上使用。 本文所述的弓形光波导具有由较低有效折射率介质包围的较高折射率的区域，以在集成光学电路的有源部件之间限制和传播光。 通过使用具有滑动隔室的水平石墨舟的选择性液相外延生长围绕弯曲部延伸的光波导，其中生长多层Ga1-xAlxAs（0≤x≤0.3）。 对于rc = 10密耳的相对较低的曲率半径，该角度由尖锐的方面支配，随着曲率半径的增加，该刻面逐渐减小，直到在rc = 25密耳，在 光波导。 弓形光波导结构的一个具体构造是y形波导，其中每个腿可具有不同的比曲率半径。

    INTEGRATING FABRICATION OF PHOTODETECTOR WITH FABRICATION OF CMOS DEVICE ON A SILICON-ON-INSULATOR SUBSTRATE
    5.
    发明申请
    INTEGRATING FABRICATION OF PHOTODETECTOR WITH FABRICATION OF CMOS DEVICE ON A SILICON-ON-INSULATOR SUBSTRATE 审中-公开
    用CMOS绝缘体基板上的CMOS器件制造光电二极管的集成制造

    公开(公告)号：US20100038689A1

    公开(公告)日：2010-02-18

    申请号：US12191189

    申请日：2008-08-13

    申请人： Donghwan Ahn ,  Sanjay Banerjee ,  Joe C. Campbell

    发明人： Donghwan Ahn ,  Sanjay Banerjee ,  Joe C. Campbell

    IPC分类号： H01L31/105 ,  H01L31/18

    CPC分类号： H01L27/1203 ,  H01L21/84 ,  H01L31/02019 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/0352 ,  H01L31/035281 ,  H01L31/105 ,  H01L31/1808 ,  H01L31/184 ,  Y02E10/50

    摘要： A method and semiconductor device for integrating the fabrication of a photodetector with the fabrication of a CMOS device on a SOI substrate. The SOI substrate is divided into two regions, a CMOS region and an optical detecting region. After the CMOS device is fabricated in the CMOS region, the optical detecting region is patterned and etched through the top silicon layer and the buried oxide layer to the base silicon layer. The pattern is etched to a depth so that after a material of a photodetector is deposited in the etched pattern, the material grows to the surface level of the SOI substrate. After the formation of a photodetector structure in the optical detecting region, the metallization process is performed on the CMOS device and the photodetector. In this manner, the fabrication of a photodetector is integrated with the fabrication of a CMOS device on the SOI substrate.

    摘要翻译： 一种用于将光电检测器的制造与在SOI衬底上制造CMOS器件集成的方法和半导体器件。 SOI衬底被分成两个区域，即CMOS区域和光学检测区域。 在CMOS器件制造在CMOS区域之后，光学检测区域被图案化并通过顶部硅层和掩埋氧化物层蚀刻到基底硅层。 将图案蚀刻到深度，使得在光刻器的材料沉积在蚀刻图案中之后，材料生长到SOI衬底的表面水平。 在光学检测区域中形成光检测器结构之后，在CMOS器件和光检测器上进行金属化处理。 以这种方式，光电探测器的制造与SOI衬底上的CMOS器件的制造集成在一起。

    Demultiplexing photodetector
    6.
    发明授权
    Demultiplexing photodetector 失效
    解复用光电探测器

    公开(公告)号：US4301463A

    公开(公告)日：1981-11-17

    申请号：US128305

    申请日：1980-03-07

    申请人： Charles A. Burrus, Jr. ,  Joe C. Campbell ,  Andrew G. Dentai ,  Tien P. Lee

    发明人： Charles A. Burrus, Jr. ,  Joe C. Campbell ,  Andrew G. Dentai ,  Tien P. Lee

    IPC分类号： H01L31/11 ,  H04B10/158 ,  H01L27/14

    CPC分类号： H01L31/11

    摘要： A three terminal, totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary layers (203 and 205) of indium, gallium, arsenide phosphide having unequal bandgaps and each having a pn junction are separated by a buffer layer (204) of n type indium phosphide. Operation at longer wavelengths is achieved by causing the bottom quaternary layer to have the higher bandgap energy thereby permitting it to detect the shorter wavelengths in the radiation and causing the topmost quaternary layer (205) to have the lower bandgap energy thereby permitting it to detect the longer wavelengths. The bottom contact (213) on the substrate has an opening thereby providing a window (230) through which incoming radiation (250) can be coupled through the substrate to the two quaternary layers.

    摘要翻译： 公开了三端，全集成解复用光电二极管，其中同时存在于两个波长处的信息可以被发展成在三个端子处可用的两个分离的电流。 通过n型磷化铟的缓冲层（204）分离具有不等带隙并且各具有pn结的铟，镓，砷化磷的两个四元层（203和205）。 通过使底部四周层具有较高的带隙能量从而允许其检测到辐射中的较短波长并且使最顶层的四分层（205）具有较低的带隙能量从而允许其检测到 波长较长。 衬底上的底部触点（213）具有开口，从而提供窗口（230），入射辐射（250）可以通过该窗口通过衬底耦合到两个四层。

    Magneto-optic modulator using dielectric mirrors
    7.
    发明授权
    Magneto-optic modulator using dielectric mirrors 失效
    使用电介质镜的磁光调制器

    公开(公告)号：US4239337A

    公开(公告)日：1980-12-16

    申请号：US46954

    申请日：1979-06-08

    申请人： Joe C. Campbell ,  Kam-Yin Lau ,  Julian Stone

    发明人： Joe C. Campbell ,  Kam-Yin Lau ,  Julian Stone

    IPC分类号： G02F1/09

    CPC分类号： G02F1/09

    摘要： A magneto-optic modulator of the bounce-cavity type is disclosed wherein the mirrors that are attached to the garnet crystal to provide the reflections are multilayered dielectric mirrors. By polarizing the input beam such that its E vector is perpendicular to the plane of incidence substantially total reflection is achieved from the mirrors and all of the input beam emerges from the garnet crystal. A metal film deposited on a plane of the crystal that is perpendicular to the mirrors permits the establishment of a magnetic field that is substantially parallel to the reflected beams within the crystal. When the field is established by passing current through the film, much of the light is lost during each of the reflections since substantial amounts of the polarized light having polarizations in the plane of incidence are coupled through the dielectric mirrors. Hence the intensity of the output beam is modulated by the current in the metal film.

    摘要翻译： 公开了一种反弹型磁光调制器，其中连接到石榴石晶体以提供反射的反射镜是多层电介质镜。 通过使输入光束偏振使其E矢量垂直于入射平面，基本上从反射镜获得全反射，并且所有的输入光束从石榴石晶体出射。 沉积在与镜子垂直的晶体平面上的金属膜允许建立基本上平行于晶体内的反射光束的磁场。 当通过使电流通过膜建立场时，由于在入射平面中具有极化的大量偏振光通过电介质镜耦合，所以在每次反射期间大部分光损失。 因此，输出光束的强度由金属膜中的电流调制。

    Demultiplexing photodetector
    9.
    发明授权
    Demultiplexing photodetector 失效
    解复用光电探测器

    公开(公告)号：US4213138A

    公开(公告)日：1980-07-15

    申请号：US969346

    申请日：1978-12-14

    申请人： Joe C. Campbell ,  Tien P. Lee

    发明人： Joe C. Campbell ,  Tien P. Lee

    IPC分类号： H01L31/10 ,  H01L27/15 ,  H01L31/11 ,  H01L31/12 ,  H01L27/14 ,  H01L29/161

    CPC分类号： H01L31/125 ,  H01L27/15 ,  H01L31/11

    摘要： A 3-terminal totally integrated demultiplexing photodiode is disclosed wherein information present simultaneously at two wavelengths can be developed into two separate currents available at the three terminals. Two quaternary n-type layers (103 and 105) of indium gallium arsenide phoshide having unequal bandgaps and each having a pn junction are separated by a layer of (104) of n-type indium phosphide. The device is oriented so as to present the incoming radiation first to the quaternary layer having the larger bandgap and then to the quaternary layer having the lower bandgap. One of the contacts (111) is attached to the top layer (106) of n-type indium phosphide, a second contact (112) is attached to a central p-type region (110) established in the top layer of indium phosphide and penetrating through to the top quaternary layer, and the third contact (113 or 302) is connected either to the indium phosphide substrate (101) or to a p-type outer region (301) that surrounds all of the layers. By reversing the dc potential applied to the junctions in the quaternary layers, a dual-wavelength light emitting diode is provided.

    摘要翻译： 公开了一种三端全集成解复用光电二极管，其中同时存在于两个波长处的信息可以被发展成在三个端子处可用的两个分离的电流。 具有不等带隙并且各自具有pn结的砷化铟镓磷光体的两个四元体n型层（103和105）被n型磷化铟的（104）层隔开。 器件被定向成将入射辐射首先呈现到具有较大带隙的四元层，然后到具有较低带隙的四元层。 触点（111）中的一个连接到n型磷化铟的顶层（106）上，第二触点（112）连接到建立在磷化铟顶层中的中心p型区域（110）， 穿透到顶部四周层，并且第三触点（113或302）连接到磷化铟基板（101）或围绕所有层的p型外部区域（301）。 通过反转施加到四元层中的结的直流电位，提供了双波长发光二极管。

    Long wavelength avalanche photodetector
    10.
    发明授权
    Long wavelength avalanche photodetector 失效
    长波长雪崩光电探测器

    公开(公告)号：US4631566A

    公开(公告)日：1986-12-23

    申请号：US525455

    申请日：1983-08-22

    申请人： Joe C. Campbell ,  Andrew G. Dentai

    发明人： Joe C. Campbell ,  Andrew G. Dentai

    IPC分类号： G01J1/02 ,  H01L31/0304 ,  H01L31/107 ,  H01L27/14 ,  H01L31/00

    CPC分类号： H01L31/03046 ,  H01L31/1075 ,  H01L2224/48463 ,  Y02E10/544

    摘要： High speed, high quantum efficiency, low dark current, and avalanche gain greater than 10 are exhibited by a long wavelength avalanche photodetector including in succession a terminal region of p-type indium phosphide (InP) a multiplication region comprising first and second layers of n-type indium phosphide (InP), a grading layer of n-type indium gallium arsenide phosphide (InGaAsP), and an absorption region of n-type indium gallium arsenide (InGaAs).

    摘要翻译： 高速，高量子效率，低暗电流和大于10的雪崩增益由长波长雪崩光电检测器显示，其包括连续的p型磷化铟（InP）的末端区域，包括第一和第二层n 型铟磷化物（InP），n型砷化镓镓磷化物（InGaAsP）的分级层和n型砷化铟镓（InGaAs）的吸收区域。